Chapter 4 Bipolar Junction Transistors (BJTs)

Introduction



http://engr.calvin.edu/PRibeiro_WEBPAGE/courses/engr311/311_frames.html

A simplified structure of the npn transistor.
Physical Structure and Modes of Operation



A simplified structure of the pnp transistor.
Physical Structure and Modes of Operation



Physical Structure and Modes of Operation




Mode EBJ CBJ

Active Forward Reverse
Cutoff Reverse Reverse
Saturation Forward Forward


Current flow in an npn transistor biased to operate in the active mode, (Reverse current components due to drift of thermally generated
minority carriers are not shown.)
Operation of The npn Transistor Active Mode



Profiles of minority-carrier concentrations in the base and in the emitter of an npn transistor
operating in the active mode; v
BE
> 0 and v
CB
> 0.
Operation of The npn Transistor Active Mode



The Collector Current



The Base Current



Physical Structure and Modes of Operation



i
C
I
S
e
v
BE
V
T

i
B
i
C
|
I
S
|
e
v
BE
V
T

i
E
i
C
i
B
+
| 1 +
|
i
C

| 1 +
|
I
S
e
v
BE
V
T

\
|
|
|
.
i
C
o I
E
o
|
| 1 +
Operation of The npn Transistor Active Mode
Large-signal equivalent-circuit models of the npn BJT operating in the active mode.
Equivalent Circuit Models



The Constant n


The Collector-Base Reverse Current

The Structure of Actual Transistors



Current flow in an pnp transistor biased to operate in the active mode.
The pnp Transistor


Two large-signal models for the pnp transistor operating in the active mode.
The pnp Transistor


Circuit Symbols and Conventions


C
B
E
C
B
E
Circuit Symbols and Conventions



Example 4.1


VCC 15 := IC1 0.001 := | 100 := VBE 0.7 := VEE 15 := VT 0.025 :=
Design circuit such that
VC 5 := IC2 0.002 :=
RC
VCC VC
IC2
:= RC 5 10
3
=
Since VBE=0.7V at IC=1mA, the value of VBE at IC=2mA is
VBE 0.7 VT ln
2
1
|

\
|
|
.
+ := VBE 0.717 =
VE VBE := VE 0.717 =
o
|
| 1 +
:= IE
IC2
o
:= IE 2.02 10
3
=
RE
VE VEE ( )
IE
:= RE 7.071 10
3
=
i
C
I
S
e
v
BE
V
T

IB
IC2
|
:= IB 2 10
5
=
E
B
C
Example 4.1


IB
IC2
|
:= IB 2 10
5
=
Example 4.1


Summary of the BJT I-V Relationships in the Active Mode
i
C
I
S
e
v
BE
VT
i
B
i
C
|
I
S
|
e
v
BE
VT
i
E
i
C
o
I
S
o
e
v
BE
VT

Note : for pnp transitor, replace vBE f or vEB

i
C
o i
E
i
B
1 o
( )
i
E

i
E
| 1 +
i
C
| i
B
i
E
| 1 +
( )
i
B

| o i
E
o
|
| 1 +
VT 25mV
Exercise 4.8


Exercise 4.9


The Graphical Representation of the Transistor Characteristics



The Graphical Representation of the Transistor Characteristics

Temperature Effect (10 to 120 C)


The i
C
-v
CB
characteristics for an npn transistor in the active mode.
Dependence of ic on the Collector Voltage

Dependence of ic on the Collector Voltage

(a) Conceptual circuit for measuring the i
C
-v
CE
characteristics of the BJT. (b) The i
C
-v
CE
characteristics of a practical BJT.
Dependence of ic on the Collector Voltage Early Effect

I
C
I
S
e
v
BE
VT
1
v
CE
V
A
+
|

\
|
|
.

VA 50 to 100V
Dependence of ic on the Collector Voltage Early Effect

Nested DC Sweeps

Example


Example


Example


Monte Carlo Analysis Using PSpice





Monte Carlo Analysis Using PSpice






Monte Carlo Analysis Using PSpice



Probe Output
Ic(Q), Ib(Q), Vce


Monte Carlo Analysis Using PSpice


(a) Conceptual circuit to illustrate the operation of the transistor of an amplifier.
(b) The circuit of (a) with the signal source v
be
eliminated for dc (bias) analysis.
The Transistor As An Amplifier


The Collector Current and The Transconductance

The Base Current and the Input Resistance at the Base

The Emitter Current and the Input Resistance at the Emitter
Linear operation of the transistor under the small-signal condition: A small signal v
be
with a triangular waveform is superimpose din the
dc voltage V
BE
. It gives rise to a collector signal current i
c
, also of triangular waveform, superimposed on the dc current I
C
. I
c
= g
m
v
be
,
where g
m
is the slope of the i
c
- v
BE
curve at the bias point Q.
The Transistor As An Amplifier


Two slightly different versions of the simplified hybrid-H model for the small-signal operation of the BJT. The equivalent circuit in
(a) represents the BJT as a voltage-controlled current source ( a transconductance amplifier) and that in (b) represents the BJT as a
current-controlled current source (a current amplifier).
Small-Signal Equivalent Circuit Models


Two slightly different versions of what is known as the T model of the BJT. The circuit in (a) is a voltage-controlled current source
representation and that in (b) is a current-controlled current source representation. These models explicitly show the emitter resistance
r
e
rather than the base resistance r
H
featured in the hybrid-t model.
Small-Signal Equivalent Circuit Models


Signal waveforms in the circuit of Fig. 4.28.
Fig. 4.30 Example 4.11: (a) circuit; (b) dc analysis; (c) small-signal model; (d) small-signal analysis performed directly on the
circuit.
Fig. 4.34 Circuit whose operation is to be analyzed graphically.
Fig. 4.35 Graphical construction for the determination of the dc base current in the circuit of Fig. 4.34.
Fig. 4.36 Graphical construction for determining the dc collector current I
C
and the collector-to-emmiter voltage V
CE
in the circuit of
Fig. 4.34.
Fig. 4.37 Graphical determination of the signal components v
be
, i
b
, i
c
, and v
ce
when a signal component v
i
is superimposed on the dc
voltage V
BB
(see Fig. 4.34).
Fig. 4.38 Effect of bias-point location on allowable signal swing: Load-line A results in bias point Q
A
with a corresponding V
CE
which
is too close to V
CC
and thus limits the positive swing of v
CE
. At the other extreme, load-line B results in an operating point too close to
the saturation region, thus limiting the negative swing of v
CE
.
Fig. 4.44 The common-emitter amplifier with a resistance R
e
in the emitter. (a) Circuit. (b) Equivalent circuit with the BJT replaced
with its T model (c) The circuit in (b) with r
o
eliminated.
Fig. 4.45 The common-base amplifier. (a) Circuit. (b) Equivalent circuit obtained by replacing the BJT with its T model.
Fig. 4.46 The common-collector or emitter-follower amplifier. (a) Circuit. (b) Equivalent circuit obtained by replacing the BJT with
its T model. (c) The circuit in (b) redrawn to show that r
o
is in parallel with R
L.
(d) Circuit for determining R
o.

An npn resistor and its Ebers-Moll (EM) model. ISC and ISE are the scale or saturation
currents of diodes D
E
(EBJ) and D
C
(CBJ).

More General Describe Transistor in any mode of operation.
Base for the Spice model.
Low frequency only
A General Large-Signal Model For The BJT:
The Ebers-Moll Model
i
DE
I
SE
e
v
BE
V
T
1
|

\
|
|
|
.

i
DC
I
SC
e
v
BC
V
T
1
|

\
|
|
|
.

ISC > ISE (2-50)

A General Large-Signal Model For The BJT:
The Ebers-Moll Model
I
DE
I
SE
e
v
BE
V
T
1
|

\
|
|
|
.

I
DC
I
SE
e
v
BC
V
T
1
|

\
|
|
|
.

o
F
f orwarded o of the transistor source (close to 1)
o
R
reverse o of the transistor source (0.02 - 0.5
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Terminal Currents
o
F
I
SE
o
R
I
SC
I
S
i
E
i
DE
o
R
i
DC
i
C
i
DC
o
R
i
DE
+
i
B
1 o
F

( )
i
DE
1 o
R

( )
i
DC
+
|
F
o
F
1 o
F

i
E
I
S
o
F
e
v
BE
V
T
1
|

\
|
|
|
.
I
S
e
v
BC
V
T
1
|

\
|
|
|
.

|
R
o
R
1 o
R

i
C
I
S
o
F
e
v
BE
V
T
1
|

\
|
|
|
.

I
S
o
R
e
v
BC
V
T
1
|

\
|
|
|
.

i
B
I
S
|
F
e
v
BE
V
T
1
|

\
|
|
|
.

I
S
|
R
e
v
BC
V
T
1
|

\
|
|
|
.
+
i
E
I
S
o
F
e
v
BE
V
T
I
S
1
1
o
F

\
|
|
.
+
i
C
I
S
e
v
BE
V
T
I
S
1
o
R
1
|

\
|
|
.
+
i
B
I
S
|
F
e
v
BE
V
T
I
S
1
|
F
1
|
R
+
|

\
|
|
.
+
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Forward Active Mode

Since vBC is negative and its magnitude
Is usually much greater than VT the
Previous equations can be approximated
as
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Normal Saturation

Collector current will be
|
forced
IB |
forced
|
F
<
In saturation both junctions are f orwarded biased. Thus VBE and VBC
are positive and their values greater than VT.
Making these approximations and substituting
i
B
I
B
and
i
C
|
forced
IB
results in two equations that can be solved to obtain VBE and VBC.
The saturatuion voltage can be obtained as the dif f erence between the two:
VCEsat V
T
ln
1
|
forced
1 +
( )
|
R
+
1
|
forced
|
F

(
(
(
(
(
(

A General Large-Signal Model For The BJT:

The Ebers-Moll Model Reverse Mode

I1
I2 IB
Note that the currents indicated have positive values.
Thus, since ic = -I2 and iE = -I1, both iC and IE will be
negative. Since the roles of the emitter and collector are
interchanged, the transistor in the circuit will operate in
the active mode (called the reverse active mode) when the
emitter-base junction is reverse-biased. In such a case

I1 = beta_R . IB

This circuit will saturate (reverse saturation mode) when
the emitter-base junction becomes forward-biased.

I1/IB < beta_R
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Reverse Saturation

VECsat V
T
ln
1
1
|
F
+
I1
IB
|

\
|
|
.
1
|
F
|

\
|
|
.
+
1
I1
IB
|

\
|
|
.
1
|
R
|

\
|
|
.

(
(
(
(
(

:=
We can use the EM equations to find the expression of VECSat
From this expression, it can be seen that the minimum VECSat is obtained when
I1 = 0. This minimum is very close to zero.

The disadvantage of the reverse saturation mode is a relatively long turnoff time.


VE 4.56 = VE VCC I1 RC :=
I1 4.4 10
4
= I1 |
R
IB :=
RC 1000 := a) f or RC = 1 K, assume that the transitor is in the reverse active mode. thus
IB 4.4 10
3
= IB
VI VB
RB
:=
VB 0.6 := From VBC = 0.6
Calculate approximate values of e VE for the f ollowing cases:
RC = 1K, 10K, 100K
|
F
50 := |
R
0.1 :=
VBC 0.6 := VCC 5 := VI 5 := RB 1000 :=
For the circuit below, let
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Example
the BJT is saurated I1 |
R
IB < Since
mV VECsat 3.5 VECsat V
T
ln
1
1
|
F
+
I1
IB
|

\
|
|
.
1
|
F
|

\
|
|
.
+
1
I1
IB
|

\
|
|
.
1
|
R
|

\
|
|
.

(
(
(
(
(

:=
V
T
25 := a better estimate f or VE is to use the equation below (4.115)
I1 5 10
4
= I1
VCC 0
RC
:=
Since VECsat is liekly to be very small, we can assume VE = 0, and
RC 10000 := b) For RC = 100K, assume reverse saturation mode
Since VE = VB, the BJT is still in the reverse active mode.
VE 0.6 = VE VCC I1 RC :=
I1 4.4 10
4
= I1 |
R
IB :=
RC 10000 := b) For RC = 10K, assume reverse active mode
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Example
The transport model of the npn BJT. This model is exactly equivalent to the Ebers-Moll model. Note that the saturation currents of the
diodes are given in parentheses and i
T
is defined by Eq. (4.117).
A General Large-Signal Model For The BJT:
The Ebers-Moll Model Transport Model npn BJT

Basic BJT digital logic inverter.
Basic BJT Digital Logic Inverter.
vi high (close to power supply) - vo low
vi low vo high
Sketch of the voltage transfer characteristic of the inverter circuit of Fig. 4.60 for the case R
B
= 10 kO, R
C
= 1 kO, | = 50, and V
CC
=
5V. For the calculation of the coordinates of X and Y refer to the text.
Basic BJT Digital Logic Inverter.
(a) The minority-carrier concentration in the base of a saturated transistor is represented by line (c). (b) The minority-carrier charge
stored in the base can de divided into two components: That in blue produces the gradient that gives rise to the diffusion current across
the base, and that in gray results in driving the transistor deeper into saturation.
The Voltage Transfer Characteristics
The i
c
-v
cb
or common-base characteristics of an npn transistor. Note that in the active region
there is a slight dependence of i
C
on the value of v
CB
. The result is a finite output resistance
that decreases as the current level in the device is increased.
Complete Static Characteristics, Internal Impedances,
and Second-Order Effects Common Base
Avalanche

Saturation

Slope
The hybrid-t model, including the resistance r

, which models the effect of v

c
on i
b
.
Complete Static Characteristics, Internal Impedances,
and Second-Order Effects Common Base
Common-emitter characteristics. Note that the horizontal scale is expanded around the origin to show the saturation region in some
detail.
Complete Static Characteristics, Internal Impedances,
and Second-Order Effects Common-Emitter
An expanded view of the common-emitter characteristics in the saturation region.
Complete Static Characteristics, Internal Impedances,
and Second-Order Effects Common-Emitter
The Transistor Beta
Transistor Breakdown
Internal Capacitances of a BJT
C
de
t
F
I
C
V
T
Base charging or Dif f usion capacitance
Base Emitter Junction capacitance
C
je
C
je0
1
V
BE
V
0e

\
|
|
.
m
m - 0.2 - 0.5 grading coeff icient
C

C
0
1
V
CB
V
0c
+
|

\
|
|
.
m
Collector Base Juntion Capacitance
C
t
C
de
C
je
+
r
x
The Cut-Off Frequency
The Spice BJT Model and Simulation Examples
The Spice BJT Model and Simulation Examples
The Spice BJT Model and Simulation Examples
.model Q2N2222-X NPN(
Is=14.34f
Xti=3
Eg=1.11
Vaf=74.03
Bf=200
Ne=1.307
Ise=14.34f
Ikf=.2847
Xtb=1.5
Br=6.092
Nc=2
Isc=0
Ikr=0
Rc=1
Cjc=7.306p
Mjc=.3416
Vjc=.75
Fc=.5
Cje=22.01p
Mje=.377
Vje=.75
Tr=46.91n
Tf=411.1p
Itf=.6
Vtf=1.7
Xtf=3
Rb=10)
*National pid=19
case=TO18 88-09-07 bam creation
The Spice BJT Model and Simulation Examples
The Spice BJT Model and Simulation Examples



BJT Modeling - Idealized Cross Section of NPN BJT
Sunday, March 08, 1998
{Doc} --
N5FC 2 N2 2 22 DSB/ CW TRANSCEI VER
C
1 2
Ti tl e
Si z e Doc u m en t Nu m b er Rev
Dat e: She e t o f
12V REG
8V REG
12V REG
12V REG
12V REG
12V REG
8V REG
1 2V REG
12V REG
1 2V REG
12V REG
8V REG
RX_ IN
RX_ ON
TX_ VFO
TX_ ON
RX_ BFO
DET_ AUD
TX VFO
DSB
TX_ ON
RX_ ON
TX_ ON
RX_ IN
DSB
TX_ ON TX_ ON
TX_ ON
TX_ ON
RX_ ON
TX_ ON
RX_ ON
DRV_ COL L
DRV_ COL L
C18
120pF
C20 56pF C19 6.8pF
R7
560
Q4
2N2222A
R4
3.2K
C7
0.01uF
R13
4.7
C4
0.1uF
D1
1N4148
D2
1N4148
C8
0 .0 1u F
R5
1K
R10
1K
C1
0 .0 1u F
T3
TRI XFMR
C23 180pF
C26
0.01uF
R15
75
C21 180pF
T1
BIF XFMR
C22
8-80pF
L3
1mH C24
8-80pF
L5
2.0uH
L4
2.0uH
R42
15K
R21
49.9K/1%
R45
1.00K/1%
R38
33.2K/1%
L10 1mH R31
1.00M/1%
C45
0.01uF
L11
5.6uH
C51
1000pF
L15
100uH
R28
100K POT
R24
5K POT
C49
0.01uF
C54
1000pF
R27
27.4K/1%
R35
15.0K/1%
L6 100uH
C35
0.01uF
Q9
2N2222A
C31
0.01uF
C53
0.022uF
Q10
2N2222A
C32
0.01uF
R37
10K
R40
33K
C16 0 .0 22 u F
Q8
2N2222A
C48
0.01uF
R26
47
C59
0.022uF
C50
56pF
L12
1mH
D5
42pF
R32
1K
R43
10K
C47
3-36pF
R44
330
D6
1N4148
L16
1mH
C5
10uF NP
C11
0.1uF
L1 82mH
C9
0 .0 47 u F
C13
0 .0 47 u F
C14
0 .0 68 u F
C17
10uF NP
R8
1K POT
L2 82mH
C12
0 .0 68 u F
C10
0 .0 68 u F
Q3
2N2222A
Q2
2N2222A
Q1
2N2222A
R9
100
R3
10K
R1
1K
R6
10K
R2
10K
R11
27K
R12
51K
+ C2
1 00 u F
C3
0.1uF
T2
2K/SPKR
J1
PHJACK
C36
10uF NP
C41
0 .2 2u F
L8 47mH
C39
0.1uF
C43
0.1uF
C44
0 .0 33 u F
L9 47mH
C42
0 .0 47 u F
C40
0 .0 33 u F
C37
10uF NP
Q7
2N2222A
Q6
2N2222A
Q5
2N2222A
R25
100
R20
10K
R17
1K
R22
10K
R18
10K
R34
10K
R29
27K
R30
51K
+
C46
10uF
+ C27
100uF
C28
0.1uF
R19
2K
T4
TRI XFMR
D4
1N4148
D3
1N4148
L7
1mH
+
C30
10uF
C34
0 .0 1u F
R16
100 POT
E1
E2
T5
600/3K
R65 1.0
R66
10-1/2W
R71
470-1/2W
+ C76
47uF
R73
475/1%
R64
10-1/2W
R77
475/1%
D19
6.2V/1W
D10
1N4002
D16
6.2V/1W
C75
0.1uF
R67 1.0
C89
0.1uF
R59
10-1/2W
D11
1N5822
C82
0.1uF
R72
357/1%
R68
1K
C91
0.1uF
Q22
2N2222A
Q19
2N2222A
Q16
2N2222A
Q18
2N2222A
Q20
2N2222A
D12
1N4002
Q17
2N2222A
R69
75.0/1%
C83
0.1uF
+ C77
47uF
D7
1N4148
R14
10K
+
C15
1 0u F
C94
0.1uF
C92
0.01uF + C93
47uF
Q15
2N2222A
C81
470pF
R74
2K
C69
0.01uF
J5
BNC
C79
4 70 p F
C78
0.1uF
L20
1.0uH
C88
0.1uF
R76
2K POT
C70
0.1uF
L22 22uH
L21
1.0uH
R70
20
R55
2K
R62
2 0
Q21
2N2222A
T7
3:1:1
C80
1 00 0 pF
T8
BIF CHOKE
T9
C71
120pF
D14
1N4148
R56 15K
C84
0.01uF
R75 220
S3
R63
20
R61
36
R60
36
C68
0 .0 1u F
Q11
2N2222A
R50
47
R49
220
R46
2.2K
R39
47
C57
0.1uF
C63
82pF
C62
8 -8 0p F
R52
220
C58
0.1uF
C61
0.01uF
R53
39
Q12
2N2222A
R47
1K
R51
TBD
L14
1 00 u H
D18
8.2V/1W
C90
0.1uF
L13
1 00 u H
R57
15K
L19
1mH
R23
100
C38
0 .0 1u F S1
R36
1K
R33
1K
C52
2-22pF
D8
1N4148
R41
3.2K
C56
0.01uF
S2
J3
R48
470-1/2W
Q14
2N2222A
Q13
2N2222A
D9
1N4002
L17 100uH
C64
0.01uF
C65
0.01uF
J2
C66
0.01uF
C67
0.01uF
L18 100uH
E3
E4
+
C6
10uF
+
C33
10uF
+
C29
10uF
+
C25
10uF
C86
82pF
C85
8-80pF
R58
20 C72
0.1uF
C55
0.1uF
S5
C101
0.47uF
C102
0.47uF
C60
0.01uF
T6
9:1
R54
1 50 0
D17
1N4148
C73
0.01uF
+
C74
220uF
J4
F3
1A SB
F2 1A SB
S7
C?
0.01uF
C?
0.01uF
L? 100uH
C87
0.01uF
RF
PREAMP
RX MIXER
D5:
18-36pF
(6 - 1.5V)
6.95 -
7.35 MHz
VF0 / BFO
MAIN
TUNE
BANDSPREAD
RCVR FILTER
RX
GAIN
HEADPHONES
(LO-Z)
2 K 1 2 O HM
CARRIER
BALANCE
BAL
MODULATOR
TO
LO-Z
MIC
2.75 KHz LOW PASS FILTER
RX AUDIO AMP
TX AUDIO AMP
I-LIM =
0.42A
12V REGULATOR
8V REGULATOR
BIAS
(SET FOR
Ic=1.5mA
QUIESCENT)
PUSH-PULL
POWER AMP
1.5W PEP
( TH E RM A L C OU P LI N G)
LOW-PASS
RF FILTER
20dB 0dB
RCVR
ATTEN
5 uH
3 9- 2 00
A S R EQ D
T O A DJ
G AI N
RF
DRIVERS
DSB CW
USB O/S
LSB O/S
CENTER = ZERO O/S
16 VDC
UNREG
13 VDC (BATT)
KEY
PTT
CONTROL CKT
5 uH
BP LP
ANTENNA
50 OHMS
DESIGNEDBY
M. NORTHRUP
N5FC
F-LP = 2.5KHz / F-BP = 800Hz
PWR
ON/OFF
L4, L5
26t AWG32 ON
AMIDON T37-6
T1
BIFILAR XFMR
2 x 10t AWG32 ON
AMIDON FT37-61
T3
TRIFILAR XFMR
3 x 10t AWG32 ON
AMIDON FT37-61
T4
TRIFILAR XFMR
3 x 12t AWG32 ON
AMIDON FT37-61
T5
PRI: 360t AWG40
SEC: 800t AWG40
ON AMIDON
PC1408-77 POT CORE
T2
PRI: 650t AWG40
SEC: 50t AWG32
ON AMIDON
PC1408-77 POT CORE
T8: BIFILAR CHOKE
2 x 8t AWG26 ON
AMIDON FT50-61
T9:
PRI: 2 x 8t AWG 26
SEC: 7t AWG 26
ON AMIDON T68-6
T7:
PRI: 36t AWG 32
SEC: 2 x 9t AWG 32
ON AMIDON T50-2
T6:
PRI: 36t AWG 32
SEC: 4t AWG 32
ON AMIDON T50-6
The Spice BJT Model and Simulation Examples