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IMPATT Diode: Name:-Tarun Kumar AP, ECE Dept
IMPATT Diode: Name:-Tarun Kumar AP, ECE Dept
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= =
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r
AC
>0 e< e
A
r
AC
<0 e> e
A
Resonance frequency
Typically f=v
s
/2W
Some IMPATT Circuits
Classification
Device structure is based on the doping profile. The three basic
types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a
single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) A DDR diode has a p+pnn+
structure that consist of two drift layers, one for electrons and other
for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) The DAR diode has a
p+nipn+ structure that consist of one drift zone sandwiched
between two avalanche zones. The electrons and holes from the
two junctions travel across the central i-region in opposite directions
and deliver power.
Applications
These diodes make excellent microwave
generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric
amplifier.
Summary
IMPATT stands for Impact Avalanche And
Transit Time
Operates in reverse-breakdown (avalanche)
region
Applied voltage causes momentary breakdown
once per cycle
This starts a pulse of current moving through the
device
Frequency depends on device thickness
IMPact Ionization Transit Time
IMPATT devices can be used for oscillator and
amplifier applications
They can be fabricated with Si, GaAs, and InP
Can be used up 400 GHz.
Noisy oscillator
In general, IMPATTs have 10 dB higher AM
noise than that of Gunn diodes
IMPATT diode is not suitable for use as a local
oscillator in a receiver.