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Flash Memory Cell
Flash Memory Cell
Flash Memory Cell
Contents
Why Flash Memory?
Differences Between EPROM,EEPROM and Flash Memory Cell. Usage of Flash memory cell in todays market.
Fowler-Nordheim Tunneling.
Reliability
a) b) c)
d)
Scaling Issues.
Block Diagram of Flash Memory Cell along with peripheral circuitry. Conclusion.
Two type of CMOS Memory: 1)RAM: Information is lost once the power supply is switched off. They are therefore volatile. a)SRAM b)DRAM 2)ROM: They are non-volatile i.e. they keep information stored also when the power supply is switched off. a)EPROM: Electrically Programmable Read Only Memory. b)EEPROM: Electrically Erasable and Programmable Read Only Memory. c)Flash Memory.
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Why Flash?
EPROM Electrically Programmable but erasable via exposure to UV. Single transistor cell. Density is more. Programmed by CHE injection but erased by UV light. Single bit programmable but erase on the whole array. EEPROM Both electrically programmable and erasable. Two transistor cell. Density is less and occupies more area. Both programmed and erased by FN tunneling. They allow byte alterability. Flash Cell Both electrically programmable and erasable. Single transistor cell. Density is more. Mostly programmed CHE injection but erased by FN tunneling. Single bit programmable and erase consist of large no. of cells together(sector or block).
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Usage of Flash
programming operation).
erasing operation).
Fowler-Nordheim Tunneling
An optimum thickness(10nm) is chosen to trade off between performance and reliability.
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ERASE(SV)
Vcc
Vneg
FLOAT
Vcc=5v,Vpp=12v,Vdd=5-7v,Vread=1v,Vneg=-8v
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Source breakdown is one of the major limiting factors to erase time reduction
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Reliability
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Scaling
Reduction in Leff.
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NOR architecture
NAND architecture
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Flash Chip
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To be continued
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THANK YOU
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