EEE 533 - Semiconductor Device and Process Simulation

EEE 533: Semiconductor Device and

Process Simulation
Spring 2001

Lecture 2

Instructor: Dragica Vasileska
Department of Electrical Engineering
Arizona State University

EEE 533 - Semiconductor Device and Process Simulation
A. INTRODUCTION
Modeling
Representation of the physical structure or behavior of a device by
an abstract mathematical model which approximates this behavior:
closed form expression (analytical model), or
a system of simultaneous equations that are solved numerically.
Analysis - method by which a complex problem of characterizing the
device is resolved into similar component parts which allow the
required investigation to be achieved in a near exact manner.
Device Simulation - more approximate in nature (although this need
not always be the case) and frequently takes a phenomenological
approach.
Process Simulation - Numerical simulation of the physical
formation of the semiconductor device structure through one or more
steps of processing.

* Traditional device modeling has involved a trial and error approach,
which is becoming too expensive for ultra-small devices.
EEE 533 - Semiconductor Device and Process Simulation
Solid State Device Models

Equivalent circuit models:
- Based on the electrical performance of the device
- Suitable for circuit design applications
- Limited in their range of application, since it is difficult to relate the
model elements to physical parameters
- Not suitable for predicting performance of novel device structures

Physical device models:
- Based on the physics of carrier transport (dc, transient, large signal,
and high-frequency operation)
- Detailed physical device models require substantial amount of
computer time and memory
- Physical device models are solved using: bulk carrier transport
models, Boltzmann transport models, or quantum transport concepts
- Suitable for predicting the performance of complex device structures
EEE 533 - Semiconductor Device and Process Simulation
Hierarchy of Physical Device Models
Quantum Approaches
Boltzmann Equation
Monte Carlo Particle
Based Approaches
Moments of Boltzmann Transport
Equation (Hydrodynamic and Energy
Balance Approaches)
Drift-Diffusion Approaches
Compact Approaches
EEE 533 - Semiconductor Device and Process Simulation
Validity of the Semiclassical Transport Models
Drift-Diffusion Model:
Good for devices with L
G
>0.5 m
Cant deal with hot carrier effects
Hydrodynamic Model:
Hot carrier effects, such as
velocity overshoot, included
into the model
Overestimates the velocity at
high fields
Particle-Based Simulation:
Accurate up to classical limits
Allows proper treatment of the
discrete impurity effects and
e-e and e-i interactions
Time consuming
L
G
> 0.5 m
L
G
< 0.1 m
L
G
> 0.1 m
discrete impurity effects,
electron-electron interactions
EEE 533 - Semiconductor Device and Process Simulation
Review of Field Equations
In general, one needs to solve Maxwells equations inside and outside
the device
t
t
c
c
+ = V
c
c
= V
D
J H
B
E
0 = V
= V
B
D
Numerical techniques to solve these equations include:
Finite Difference Time domain solutions (FDTD)
Frequency domain solutions (spectral techniques)

At present, nearly all device simulation tools assume the quasi-static
approximation, such that the electric field is obtained from Poissons
equation:
V V V = = V E
r
r
c
) (
) (
2
EEE 533 - Semiconductor Device and Process Simulation
c

= V
V =
V + =
+ V =
c
c
+ V =
c
c
V
p qD p q
n qD n q
g r
q t
p
g r
q t
n
p p p
n n n
p p p
n n n
2
E J
E J
J
1
J
1
Phenomenological Transport Simulation
Drift-Diffusion Model (zeroth and first-order moments of the BTE):
Continuity equations
Current density equations
Poissons equation
Variables n, p, and V solved simultaneously on a mesh. Transport is
local, and described by the phenomenological mobility v =(E)E and
diffusion coefficient D(E)=kT/q (E) (Einstein relation).
EEE 533 - Semiconductor Device and Process Simulation
Physical Device Simulation
There are two main components in
any physical device simulator:
- Characterization of charge
motion due to driving forces and
diffusion process (transport)
- Fields due to charge distribution
and motion
Recessed MOSFET represented on 3D mesh
over finite domain (courtesy of S. M. Goodnick)
Initialize Data
Field Solver
Transport Kernel
yes
no
Criterion
satisfied?
START
STOP
EEE 533 - Semiconductor Device and Process Simulation
Historical Development of Physical Device Modeling
Closed-form analytical modeling:
Gradual-channel approximation (Schockley, 1952)
Numerical modeling:
Gummels 1D numerical scheme for BJTs (1964)
De Mari (1968): 1D numerical model for pn - junctions
Sharfetter and Gummel (1969): 1D simulation for Silicon Read
(IMPATT) diodes
Kenedy and OBrien (1970): 2D simulation of silicon JFETs
Slotboom (1973): 2D simulation of BJTs
Yoshii et al. (1982): 3D modeling for a range of semiconductor devices
Commercial device simulators:
2D MOS: MINMOS, GEMINI, PISCES, CADDET, HFIELDS, CURRY
3D MOS: WATMOS, FIELDAY
1D BJT: SEDAN, BIPOLE, LUSTRE
2D BJT: BAMBI, CURRY
MESFETs: CUPID
Particle-based simulators: DAMOCLES
Quantum transport simulators: NEMO