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19 Sputtering and Evaporation Presentation-Ravi Chawla
19 Sputtering and Evaporation Presentation-Ravi Chawla
MOTIVATION
Film growth/deposition
Deposition
Deposition systems may be divided into two groups:
a) Chemical Vapor Deposition (CVD) systems Which rely on the chemical reaction of the constituents of a vapor phase at the substrate surface to deposit a solid film on this surface. b) Physical Vapor Deposition (PVD) systems Which directly deposit the source material onto a given substrate in a line-of-site impingement type deposition.
vapor of the material to be deposited as a thin film. The material in solid form is either heated until evaporation (thermal evaporation) or sputtered by ions (sputtering). In the last case, ions are generated by a plasma discharge usually within an inert gas (argon). It is also possible to bombard the sample with an ion beam from an external ion source. This allows to vary the energy and intensity of ions reaching the target surface.
methods include:
Electron Beam
THERMAL EVAPORATION
Thermal evaporation, using different types of heat sources, was the earliest method used for achieving supersaturated vapor. Preparation of nanoparticles from supersaturated vapor produced by thermal evaporation was first established in 1930 to prepare nanoparticles of elements.
Oxides were later prepared by the same method by introducing oxygen to the metal vapor.
Fig: Example of an inductively heated crucible used to create moderately charged temperatures
SPUTTERING
Sputtering: General
Sputtering Deposition
Sputtering
The substrate is placed in a vacuum chamber with the source material, named a target, and an inert gas (such as argon) is introduced at low pressure. A gas plasma is struck using an RF power source, causing the gas to become ionized. The ions are accelerated towards the surface of the target, causing atoms of the source material to break off from the target in vapor form and condense on all surfaces including the substrate.
A solid slab (ie., target) of the material to be deposited is placed in a vacuum chamber along with the substrate on which the deposition is to take place. The target is grounded. Argon gas is introduced into the chamber and ionized to a positive charge. The Ar ions bombard the target and cause the target atoms to scatter, with some of them landing on the substrate. The plasma is composed of the Ar atoms, Ar ions, the sputtered material, gas atoms and electrons generated by the sputtering process. Allows the deposition of a large assortment of materials on any type of substrate
Sputtering Process
Momentum transfer
W= kV i PTd
-V working voltage - i discharge current - d, anode-cathode distance - PT, gas pressure - k proportionality constant
The sputter yield depends on: (a) the energy of the incident ions; (b) the masses of the ions and target atoms; (c) the binding energy of atoms in the solid and (d) the incident angle of ions.
Reactive Sputtering
Sputtering metallic target in the presence of a reactive gas mixed with inert gas (Ar)
A mixture of inert +reactive gases used for sputtering
oxides Al2O3, SiO2, Ta2O5 (O2) nitrides TaN, TiN, Si3N4 (N2, NH3) carbides TiC, WC, SiC (CH4, C2H4, C3H8)
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sputter rate adjust reactive gas flow to get good stoichiometry without incorporating excess gas into film
Process Parameters
The physical properties of ZnO films are influenced not only by
Process Parameters
Quality of the film dependents on deposition conditions, such as substrate temperature, deposition power, deposition pressure and argonoxygen flow.
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Conclusion
Sputter deposition is a widely used technique for depositing
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Sputtering advantages/disadvantages
Thank You!