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DR Rajendra Patrikar
DR Rajendra Patrikar
Rajendra M. Patrikar
Department of Electronics and Computer Science and Engineering
VNIT, Nagpur
SIMULATION OF SELF ASSEMBLY PROCESSES
A CASE STUDY OF QUANTUM DOT GROWTH
Introduction
Quantum Dots and it’s application
Simulation and Implementation
Results
Multiscale Modelling and Results
Future work
Conclusion
Beyond the Si MOSFET.....
1) MOSFET 3) CNTFET
VG
VS VD
Bachtold, et al.,
Science, Nov.
2001
2) SBFET VG 4) Molecular
VG Transistors?
VD
VS VS VD
Simulation Results
• Technology : 50 nm
• Technology : 180 nm
VDAT-04
5 Stage Ring Oscillator
Nanoelectronics and Computing
1938 1998
~20-30 nm
Quantum dots
• Quantum-dot LED
n+ n+
Flash memory with
poly floating gate
Tunnel oxide
n+ n+
Conventional flash Memory Vs.
QD flash Memory Device
•Scaling limitations arising from,
-High oxide thickness to avoid charge loss from
FG
-High programming / erasing voltages due to
Channel Hot Electron injection, F-N tunneling,
…
-Limits the Leff shrinkage
Control gate
CFC
Floating gate
CS CD
n+ CB n+
Leff
Conventional flash Memory Vs.
QD flash Memory Device
Floating gate i sreplaced by QDs
•For nano-crystal floating gates charge
loss to the
contact regions is minimized
-Nano-crystals are isolated from each n+ n+
other
-Thin oxide is permissible
-Lower programming voltage is possible
-Charging the QD by Coulomb blockade Flash memory with
nanocrystal floating gates
Quantum dot flash memory
Gate
SiO2 10 nm
Control oxide
Ge
Tunnel oxide
crystals
Nano-
Si
Drain
Source
Flash memory
Self Assembly: Principles
Formal definitions
• Self-assembly is the autonomous organization of components
into patterns or structures without human intervention
■ Dynamic self-assembly
– Interactions responsible for formation of structures only
occurs if the system is dissipating energy
■ Static self-assembly
– Components at global or local equilibrium
■ Stigmergic building
– Current state of structure acts as stimulus to further action
– Term originally comes from termite nest building
– Related to multi-step directed self-assembly, but can be
stochastically started without an initial structure
Self Assembly: Principles
Key Issues:
■ Uniform size
■ Controlled placement
■ Directed processes
■ Physical mechanisms,
■ Chemical Mechanisms
■ Biochemical Processes
Self Assembly Process
• Hetero-epitaxy
• Crystalline material
• Smooth surface
CVD Process Modeling
Mesoscale simulation
• Kinetic Monte Carlo
• Continuum model
[long time (>1 sec)]
fundamental data
Atomic-scale calculation
• density functional theory
• tight binding MD
• classical MD
[short time (< nsec)]
Molecular Dynamics
B
Eb δE
A
Kinetic Monte Carlo
0.9
0.8
0.7
0.6 773K
Thickness
0.5 823K
0.4 873K
0.3 923K
0.2
0.1
0
1 2 3 4
Time
Simulation Results
Non_Uniformity
1.6
1.5
1.4
Std. Dev.
1.3
1.2
1.1
1
0.9
20 30 40 60
Flow rate
Simulation Results
Average Thickness
3.5
3
2.5
Thickness
2 773K
1.5 873K
1
0.5
0
20 30 40 60
Flow Rate
Simulation Results
Simulation Results
■Film is continuous and no dot formation on large scale
after deposition
Experimental Results
Atoms Engineering
TIME
hours Continuum
MESO
MD
femtosec QM DISTANCE
Angstrom meters
Multiscale simulation
As the system grows larger, the computational time taken in solving the
calculations for the simulation can increase enormously
Thus, there is a huge spatial and time gap between what can be solved
through molecular simulation, and the time scales that are often
important.
Multiscale simulation
FEM Coding :
FEM Coding :
Initialising of the nodes
Experimental Results
■Film is continuous and no dot formation on large
scale after deposition
■After annealing dot are formed
■Substrate type and quality affects the dot
formation
■Stress during
Multiscale simulations
annealing
•Kinetic Monte Carlo (KMC) process is
• Molecular Dynamics (MD) necessary to
form dots.
• Finite Element Method (FEM)
Simulation Result
The
rough surface is therefore modeled using the
Mandelbrot-Weierstrass function.
TheMandelbrot-Weierstrass function is a
summation of sinusoids of geometrically increasing
frequency and decreasing amplitude, with a random
phase.
The Mandelbrot-Weierstrass function
RMS roughness=0.2
RMS roughness=0.7
Modeling a Rough Surface
Modeling a Rough Surface
Finding
Capacitance:
Finding
Potential:
The Mandelbrot-Weierstrass function
Thank You!
Goodbye and Thanks for
Listening about me