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PN Junctions
PN Junctions
ECE 663
ECE 663
ECE 663
V
I = I0(e
p
I0
qV/hkT
-1)
= q(ni2/ND) (Lp/tp)
pn
ECE 663
- = mobile electrons, n
Time < 0
P-type piece
N-type piece
ECE 663
ECE 663
Hole gradient
ECE 663
ECE 663
++
++
++
++
++ +
- - - - - -
ECE 663
ECE 663
http://scott.club365.net/uploaded_images/Moses-Parts-the-Red-Sea-2-782619.jpg
V (stopping e- flow)
V (stopping e+ flow)
ECE 663
Depletion
Region
E
ECE 663
P side
p Na
N a ni e
n Nd
( Ei EF )
(Ei EF )Left
kT
Na
kT ln
ni
N d ni e
( EF Ei )
(E F Ei )Right
kT
Nd
kT ln
ni
ECE 663
kT Na kT Nd
Vbi
ln
ln
q ni q ni
kT Na Nd
Vbi
ln 2
q ni
Na acceptor level on the p side
Nd donor level on the n side
ECE 663
(Ei EF )Left Ei EV EG / 2
N
(EF Ei )Right kT ln D
ni
EG kT Nd
Vbi
ln
2q q ni
ECE 663
p ni e
( Ei EF )
kT
n ni e
( EF Ei )
kT
ECE 663
ECE 663
ECE 663
Doping
NAxp = NDxn
= WD/(NA-1 + ND-1)
Vbi = |Em|WD
Charge
Density
Electric
Field
Electrostatic
Potential
ECE 663
Depletion Width
ND
ND
N A ND
W xn x p xn xn
xn 1
xn
NA
NA
NA
1
2
2K S e 0
NA
N A ND
W
Vbi
q ND N A ND N A
2K S e 0 N A ND
W
Vbi
ND N A
q
1
2
ECE 663
Maximum Field
Em = 2qVbi/kse0(NA-1+ND-1)
ECE 663
N ND
W xn A
NA
or
N ND
N A N A N D
W xn A
p
NA
N D N A
or
NA
xn W
N A ND
ND
xp W
N A ND
ECE 663
"P+ - N"
=>
"P - N+"
=>
>> Nd
<< Nd
ECE 663
ECE 663
Reverse Bias
+Voltage to the n side and Voltage to the p side:
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2K S e0 N A ND
W
Vbi Vrev
ND N A
q
xn
W Vrev
NA
N A ND
xp
1
2
W Vrev
ND
N A ND
ECE 663
Forward Bias
More
electrons
supplied
Vapplied
is sucking
more: to n, more holes to p
electrons (-) out of N-side
ECE 663
2K S e0 N A ND
W
Vbi Vfwd
ND N A
q
xn
W Vfwd
NA
N A ND
xp
1
2
W Vfwd
ND
N A ND
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General Expression
Convention = Vappl= + for forward bias
Vappl= - for reverse bias
2K e N ND
Vbi Vappl
W S 0 A
ND N A
q
NA
xn W Vappl
N A ND
1
2
ND
x p W Vappl
N A ND
ECE 663
Positive voltage pulls bands down- bands are plots of electron energy
Bands = plots of electron energy
Voltage = potential energy per (+) charge
Fp
Fn
n = nie(Fn-Ei)/kT
p = nie(Ei-Fp)/kT
In summary
A p-n junction at equilibrium sees a depletion width
and a built-in potential barrier. Their values depend on
the individual doping concentrations
Forward biasing the junction shrinks the depletion width
and the barrier, allowing thermionic emission and higher
current. The current is driven by the splitting of the
quasi-Fermi levels
Reverse biasing the junction extends the depletion width
and the barrier, cutting off current and creating a strong
I-V asymmetry
In the next lecture, well make this analysis quantitative
by solving the MCDE with suitable boundary conditions