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Dibl
Dibl
Capacitance
The gate capacitance Ci is the sum of the distributed capacitance from the gate to the
source end of the channel (CGS) and the drain end (CGD).
The overlap capacitance from the gate-to-source (COS) and gate-to-drain (COD).
COD is also known as Miller overlap capacitance.
The p-n junction depletion capacitances associated with the source (CJS) and drain (CJD).
Resistance
The source/drain series resistances (RS and RD).
The resistances in the substrate between the bulk contact and the source and drain (RBS
and RBD).
Current source
The drain current can be modeled as a (gate) voltage-controlled constant current source.
VD
L LR
1
RCh RSD
RSD
ID
Z Z nCi (VG VT )
We can measure VD/ID in the linear range for various MOSFETs having the same width,
but different channel lengths, as a function of substrate bias.
Varying the substrate bias changes the VT through the body effect, and therefore the
slope of the straight lines that result from plotting the overall resistance as a function of
L.
The lines pass through a point, having values which correspond to RSD and LR.
VD L LR
1
RSD
ID
Z Z n Ci (VG VT )
Various structural parameters of the MOSFET should be scaled in concert if the device
is to keep functioning properly. (by Dennard at IBM)
Scaling of depletion widths is achieved indirectly by scaling up doping concentrations.
Problem of scaling
The internal electric fields in the device would increase if the power supply voltages are
kept the same.
The longitudinal electric fields in the pinch-off region, and the transverse electric fields
across the gate oxide, increase with MOSFET scaling.
Problems known as hot electron effects and short channel effects.
Solutions to DIBL
1. The source/drain junctions must be made sufficiently shallow (i.e., scaled properly) as
the channel lengths are reduced, to prevent DIBL.
2. The channel doping must be made sufficiently high to prevent the drain from being
able to control the source junction.
Achieved by performing anti-punch-through implant in the channel.
Sometimes, instead of such an implant throughout the channel, a localized
implant is done only near the source/drains. Known as halo or pocket implants.
The higher doping reduces the source/drain depletion widths and prevents
their interaction.
For short channel MOSFETs, DIBL is related to the electrical modulation of the
channel length in the pinch-off region, L.
Since the drain current is inversely proportional to the electrical channel length, we
get
ID
1
1 L
1
L L L
L
We assume that the fractional change in the channel length is proportional to the drain
bias,
L
VD
L
Z
nCi (VG VT ) 2 (1 VD )
2L
Gate induced drain leakage (GIDL): For even more negative gate biases we find
that the off-state leakage current actually goes up as we try to turn off the
MOSFET more for high VD.