Last Lect Metallization 2014

Metallization
Anshuman Dalvi
Dr Dalvi Lectures, IC Fab tech. 2014
requirements
metallization for
Ohmic contacts (generally Al)
Gate metallization (Poly Si)
Interconnections (Poly Si)
Metals and electrical transport:

some fundamentals
Electrical conductivity in
metals
Matthiessen's Rule
Energy band diagrams for ideal MS

contacts
(a) and (c) An instant

after contact formation
(b) and (d) under

equilibrium conditions
8
>
Dr Dalvi
IC Fab tech. 2014
M Lectures,
S
M < S
MS (n-type) contact with M >

S
Soon after the contact formation, electrons will begin to
flow from S to M near junction.

Creates surface depletion layer, and hence a built-in
electric field (similar to p+-n junction).
Under equilibrium, net flow of carriers will be zero, and
Fermi-level will be constant.
A barrier B forms for electron flow from M to S.
B = M
... ideal MS (n-type) contact. B is called

barrier height.
Electrons in semiconductor will encounter an energy
barrier equal to M S while flowing from S to M.
10
11
12
13
q in both the
cases is the
barrier against
the motion of
electron flow
between metal
and
semiconductor.
14
15
If we assume the current mostly due to
thermionic emission, transfer of electrons is

over the barrier and the current density is
given by
Bigger the barrier, smaller the current.
More is applied voltage bigger is the

q
qV
current.
b
J AT e
2
16
kT
e kT
Specific contact resistivity is

defined as
V
c
V 0
Proper substitution from the last equation, we
get,
J qAT 2 kTb
e
V kT
q
b
k
c
e kT
ATq
17
For moderate doping the thermionic current
flows, for heavily doped semiconductors,

because of the narrow barrier electrons
tunnel through the barriers.
They do not have to cross over the barrier.
In that case current will be given in

tunneling parameter.
18
19
Heavily doped case..

Rc e
b
E00
E00 is related to the doping concentration of
semiconductor. Here N is doping con. Of the

semicon.
Higher the N higher will be E00 and
lower will be the Rc
20
qh
E00
4
N
m*
21
Generally,
N>1019/cm3 Dominated by tunneling
N<1019/cm3 Thermionic emission
22
23
Why generally we use npn

rather pnp?
We use Al contacts
If heavily doped, forming ohmic contact not
a problem
Moderate doping difficult
In a pnp transistor forming a base contact
is a problem.
Al (is a p type dopant) has a high value of
b it has no problem to form contact with
moderately doped p type junction.
24
How do we form metallic

contacts?
1. PVD (i) vacuum evaporation (ii)
sputtering
Step 1. : solid metal to go in gas/vapour
phase.
Step2: transportation to target
Step3: condensation as a film on the
substrate
25
Vacuum Evaporation
Most preferred
Substrate is kept
on a spherical
surface
10-6 torr vacuum
26
Cosine rule of deposition
Sample on
which we
deposit
r
Direction of metal
deposition
Source metal
27
Deposition rate
=(1/A) .(cos .cos) RT
if multiply by time of evaporation,
it is the total material deposited.
R is total rate of mass lost from the source.
Mass lost from source = R x t
28
If substrate is placed on a
spherical surface of radius r0
Thus where ever you place the sample, the
metal deposition will be same.

cos cos = .cos = r/2r0
29
E-beam evaporation
Useful when high melting point: (Cu, Ni)
30
Sputtering
Sputtering is a process whereby atoms are
ejected from a solid target material due to

bombardment of the target by energetic
particles. (useful for alloys evaporation: Au-Ge
when the evaporation rates are different)
Physical etching
31
Good thing about sputtering:
composition is maintained.
Bad part: damages due to ion beam
bombardment.
Some contamination is also likely due to
high pressure on the film (films may

have trapped gas)
32
How to deposit
We deposit by liftoff technique
Photo resist deposited
On this metallization
Removal of photo resist also removes the
metal from undesired places.
33
Problem areas with the metal

deposition
Junction spiking: Diffusion of Al is possible
in Si, that finally may short the device.
34
Problem area 2
Electro migration: Along the direction of
the electrical field, metal lines start

moving.
Thus we may have break and accumulation
of charges.
35
Problems in Al metal contact:

Spiking
If the dimensions of the window (width and
depth) are reduced big problem

Small window is a problem
Shallow junction is a problem
36
37
Copper-Silver eutectic
system
BEG-
eutectic
isotherm
Dr A Dalvi Phys Adv. Materials lectures 2014
Addition of
either of the
metals, lower
the melting
point. This is
typical
eutectic
characteristic
.
Si will
dissolve in Al
during
annealing
39
How much Si will enter in the metal lines of Al not
only depends upon the temperature, but also on the

volume available of Al.
Over all diffusion length
Dt
The depth upto which the metal will be consumed is
given by
A is contact area and S is solubility at annealing
temperature T.
40
Solution: Presence of
impurities in Al
Mix some Si in Al during the deposition

If metal contains some impurity, diffusion
of Si is affected.
Con> 1wt% Si in Al should be used.
IMP: If access Si is used, it may
precipitate and since it is having Al in it it
is becomes a P type Si. Thus we will
destroy the ohmic contact by making
another pn junction.
This problem will not arise for junction
with p type Si.
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42
43
44
Better alternative-Instead of using Al directly in contact with
Si, we use a noble metal silicide. Ptsilicide

formation
1. deposit Pt/Pd silicide

2. a refractory metal barrier is used. (W/Ti)
3. on the top we deposite Al.
This is called multilevel deposition.
Al-Pd-W-silicide
45
Electro-migration
There are metal lines in which electrons
are moving in the direction opposite to E

field.
Higher the E, more will be the
movement of electrons.
In this process electrons may collide the
ion cores and transfer some
energy/momentum to them
If sufficient energy is transferred, the
metal ions may start moving in the
direction of the electric field.
Most severe in case of Al
46
Break and accumulation of

metal lines.
How to prevent?
47
Mean time to failure

How much time does it take for a failure to
occur? MTF (mean time to failure).

MTF is found to be proportional to current
density with
More the current density, faster it is going

Q
to fail
48
2 kT
MTF J e
Q is some activation energy and in most
cases corresponds to grain boundary

diffusion.
Metal is not a single XL but polyXline.
Large the grain size, more resistance to
migration and failure time increases.
Single XL great stability.
Also depends to distribution of grain
size, uniformity of grain size is going to
increase time.
49
Shrinking of device
dimensions helps.
As the lines become narrow, mean time to
failure increases.
Because if line width decreases, Al is going
to form single XL layer.
50
alloy
Instead of using Al alone, we can use Al-Cu
alloy
Addition of copper increases the value of Q
and mean time to failure improves.
51

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Metallization

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Metals and electrical transport:

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Energy band diagrams for ideal MS

(a) and (c) An instant

(b) and (d) under

MS (n-type) contact with M >

flow from S to M near junction.

... ideal MS (n-type) contact. B is called

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

If we assume the current mostly due to

thermionic emission, transfer of electrons is

Bigger the barrier, smaller the current.

More is applied voltage bigger is the

Dr Dalvi Lectures, IC Fab tech. 2014

Specific contact resistivity is

Proper substitution from the last equation, we

Dr Dalvi Lectures, IC Fab tech. 2014

For moderate doping the thermionic current

flows, for heavily doped semiconductors,

They do not have to cross over the barrier.

In that case current will be given in

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Heavily doped case..

E00 is related to the doping concentration of

semiconductor. Here N is doping con. Of the

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Why generally we use npn

Dr Dalvi Lectures, IC Fab tech. 2014

How do we form metallic

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014

Cosine rule of deposition

Dr Dalvi Lectures, IC Fab tech. 2014

it is the total material deposited.

R is total rate of mass lost from the source.

Mass lost from source = R x t

Dr Dalvi Lectures, IC Fab tech. 2014

Thus where ever you place the sample, the

metal deposition will be same.

Dr Dalvi Lectures, IC Fab tech. 2014

Dr Dalvi Lectures, IC Fab tech. 2014