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Markets For Silicon Carbide Devices
Markets For Silicon Carbide Devices
Devices
Olivier Nowak, WTC Wicht Technologie Consulting, Munich
EPE 2005
September 12, 2005
Agenda
1 Context
2 Markets
3 Drivers and Challenges
4 Conclusion
Some customers
Infineon
Matsushita
Founded in 2000
Sss MicroTec
Located in Munich
EVG
Business
CEA LETI
Market analysis
Business development
Strategy planning
Setup of EU projects
8 consultants
ARC Seibersdorf
Studies
NEXUS MST market
analysis
RF MEMS
SiC
2009
today
SiC diodes ramping
up, transistors
starting
Technology
trigger
Peak of
Trough of
Slope of
Plateau of
inflated disillusionmenenlightenmen productivit
expectation
t
t
y
Tim
s
Visibility
Ca. 1997
First SiC wafers
Semiconductor companies
e.g. Infineon, Toshiba, Hitachi, STMicroelectronics, Fairchild, Rohm
System companies
e.g. General Electric, Rockwell Scientific, Areva, Siemens
Car makers/suppliers
e.g. Toyota/Nippondenso, Nissan
PiN diodes
Soon (< 2
years)
Thyristor
s
Cree
GE
Cree
GE
Rockwell
SiC
devices
MESFET
$3m already
Cree
New Japan
Radio
MOSFET
Before 2009
JFET/SIT
emerging
Northrop
Semisouth
Cree
Infineon/SiCE
D
Hitachi
Intrinsic
Toshiba
Rockwell,
Cree
Fairchild
Mitsubishi
Nippondenso
Philips
Rohm
BJT
Negligible contributions
from non-power devices
Pressure sensors
Radiation sensors
Prototype by Westinghouse (Siemens)
Market challenges
Situation
In practice only one source of wafers
which also happens to commercialise devices
Prognosis
Getting better after
2007
Slow improvement
No way around
As long as price issue
remains
Repeat
High temperature
<200C: SOI
200-400C: undecided (active-cooled SOI or SiC)
> 400C: SiC, when R&D is over
Conclusion
~$13m SiC device market in 2004
~75% Schottky diodes
Expected to grow to >$50m in 2009
Contact:
Olivier Nowak
olivier.nowak@wtc-consult.de