Transistor Biasing

ElectronicsTechnologyFundamentals
Chapter20
BJTAmplifiers
20.1AmplifierPropertiesP1
AmplifierGainavaluethatindicatesthe
magnituderelationshipbetweenthecircuits
inputandoutputsignals
ElectronicsTechnologyFundamentals,3rded.
PaynterandBoydell
2009PearsonHigherEducation,
UpperSaddleRiver,NJ07458.AllRightsReserved.
AmplifierGain(Continued)Threetypes
TypeofGain
Voltage
Current
Power
PaynterandBoydell
Symbol
Av
Ai
Ap
AmplifierGain(Continued)
vout
Av
vin
where
vout = the ac output voltage from the amplifier
vin = the ac input voltage to the amplifier
PaynterandBoydell
AmplifierGain(Continued)Currentand
PowerGain
iout
Ai
iin
PaynterandBoydell
Pout
Ap
Pin
TheGeneralVoltageAmplifierModel
PaynterandBoydell
AmplifierInputImpedance(Zin)thesource
seestheamplifierasaload
Z in
vin vs
RS Z in
PaynterandBoydell
AmplifierOutputImpedance(Zout)theamplifieracts
asthesourcefortheloadandincludessource
impedance
vL vout
RL
RL Z out
PaynterandBoydell
where
vout Av vin
TheCombinedEffectsoftheInputandOutput
Circuits
PaynterandBoydell
TheCombinedEffectsoftheInputandOutput
Circuits(Continued)Voltagegainreduced
from340toaneffectivevalueof276
Z in
980
vin vs
15 mV
14.7 mV
RS Z in
1k
vout Av vin 340 14.7 mV 5 V
vL vout
Av ( eff )
RL
1.2 k
5 mV
4.14 V
RL Z out
1.45 k
vL 4.14V
276
vS 15 mV
PaynterandBoydell
10
TheIdealVoltageAmplifier
InfiniteGain(ifneeded)
InfiniteInputImpedance
ZeroOutputImpedance
PaynterandBoydell
11
20.2BJTAmplifierConfigurationsP1
TheCommonEmitterAmplifier(CE)the
mostwidelyusedBJTamplifier
PaynterandBoydell
12
TheCommonCollectorAmplifier(Emitter
Follower)(CC)usedforitscurrentgainand
impedancecharacteristics
PaynterandBoydell
13
TheCommonBaseAmplifier(CB)theleast
oftenusedBJTamplifierconfiguration
PaynterandBoydell
14
ComparingtheBJTAmplifierConfigurations
Av
Ai
Ap
Zin
Zout
Common
Emitter
Midrange
Midrange
High
Midrange
Midrange
PaynterandBoydell
Emitter
Follower
Lessthan1
Midrange
Midrange
High
Low
15
CommonBase
Midrange
Lessthan1
Midrange
Low
High
20.3CommonEmitterAmplifiers:
FundamentalConceptsP1
CommonEmitterAmplifier
PaynterandBoydell
16
20.3CommonEmitterAmps:Fundamental
ConceptsP2
Input/OutputPhaseRelationships
PaynterandBoydell
17
ConceptsP3
'
re
ACEmitterResistance()thedynamic
resistanceofatransistorsemitterbasejunction
'
re
where
25 mV
IE
'
re = the ac emitter resistance
I E = the dc emitter current

PaynterandBoydell
18
20.3CommonEmitterAmplifiers:Fundamental
ConceptsP4
I C
SmallSignalCurrentGain( )
ac
ac
I B
PaynterandBoydell
19
20.3CommonEmitterAmplifiers:
FundamentalConceptsP5
SmallSignalCurrentGain(ac)(Continued)
anotherformulaforsmallsignalcurrentgain
ic
h fe
ib
where
hfe = the small-signal current gain of the transistor
ic = the change in collector current
ib = the change in base current
PaynterandBoydell
20
ConceptsP6
ACEquivalentCircuitstwostepprocess
Shortcircuitallcapacitors
Replacealldcsourceswithagroundsymbol
PaynterandBoydell
21
ConceptsP7
CouplingandBypassCapacitors
PaynterandBoydell
22
ConceptsP8
CouplingandBypassCapacitors(Continued)
CouplingCapacitoracapacitorthatisconnected
betweenamplifiersstagestoprovidedcisolation
betweenthestageswhileallowingasignaltopass
withoutdistortion
PaynterandBoydell
23
ConceptsP9
CouplingandBypassCapacitors(Continued)
BypassCapacitoracapacitorthatisusedtoestablishanac
ground(orcommon)ataspecificpointinacircuit
PaynterandBoydell
24
20.4CommonEmitterAmps:Gainand
ImpedanceCharacteristicsP1
VoltageGain(AV)thefactorbywhichasignal
voltageincreasesfromtheinputofanamplifiertoits
output
vout
Av
vin
PaynterandBoydell
25
20.4CommonEmitterAmplifiers:Gainand
VoltageGain(AV)(Continued)
Voltagegainforacommonemitteramplifier:
rc
Av '
re
where
rc
= the total ac resistance of the collector current
'
re = the ac emitter resistance of the transistor
PaynterandBoydell
26
VoltageGain(AV)(Continued)
PaynterandBoydell
27
AmplifierInputImpedance(Zin)
Z in R1 R2 Z in (base )
where
Zin = the input impedance to the amplifier
Zin(base) = the input impedance to the transistor base
Z in base h fe re'
PaynterandBoydell
28
AmplifierInputImpedance(Zin)(Continued)
PaynterandBoydell
29
AmplifierCurrentGain(Ai)
Z in rC
Ai h fe
R
in (base ) L
where
Ai = the signal current gain of the CE amplifier
hfe = the signal current gain of the transistor
PaynterandBoydell
30
PowerGain(AP)
AP Av Ai
PaynterandBoydell
31
20.5TheEmitterFollower(Common
CollectorAmplifier)P1
EmitterFolloweracurrentamplifierwitha
voltagegainthatislessthanone
PaynterandBoydell
32
DCCharacteristics
VB VCC
R2
R1 R2
VE VB 0.7 V
VE
IE
RE
VCEQ VCC VE
PaynterandBoydell
33
SaturationandCutoff
VCC
I C sat
RE
VCE off VCC
PaynterandBoydell
34
20.5TheEmitterFollower(CommonCollector
Amplifier)P4
SmallSignalCharacteristicsandAnalysis
PaynterandBoydell
35
SmallSignalCharacteristicsandAnalysis
(Continued)
rE RE RL
vout
vout
rE
rE
vin '
or
'
Av
vin re rE
re rE
In most practical applications rE
'
re ,
which makes :
Av 1
PaynterandBoydell
36
CurrentGain
Z in rE
Ai h fc
R
in (base ) L
where
hfc = the base-to-emitter current gain
Note that hfc = hfe + 1 hfe
PaynterandBoydell
37
InputImpedance(Zin)
Z in R1 R2 Z in (base )
where
Z in base h fc re' rE
h fc
= the base-to-emitter current gain of the

transistor
'
re = the ac resistance of the transistor emitter
rE RE RL
PaynterandBoydell
38
OutputImpedance(Zout)
Z out
where
'
R
RE re' th
h
fc
R R1 R2 RS
'
th
RS = the resistance of the signal source
PaynterandBoydell
39
PowerGain(AP)
AP Av Ai
PaynterandBoydell
40
20.6TheCommonBaseAmplifierP1
CommonBaseAmplifierprovidesvoltage
gainwithoutcurrentgain
PaynterandBoydell
41
ACAnalysis
PaynterandBoydell
42
ACAnalysis(Continued)
vin i r
'
e e
vout ic rC
where rc RC RL
vout ic rC
Av
'
vin ie re
since ic ie ,
rC
Av '
re
PaynterandBoydell
43
ACAnalysis(Continued)
Z in re' RE
normally RE re' ,
Z in re'
Z out
1
RC
hob
since
1
is typically in the hundreds of kilohms,
hob
Z out RC
PaynterandBoydell
44
20.7ClassBAmplifiersP1
ClassAAmplifier(covereduptothispoint)
containsasingleactivedevice(suchasa
transistor)thatconductsduringtheentire360
oftheinputcycle
ClassBAmplifierwasdevelopedtoimprove
onthelowefficiencyratingoftheclassA
amplifier
PaynterandBoydell
45
ClassBAmplifieralsoreferredtoasa
complementarysymmetryamplifierpushpull
amplifierorpushpullemitterfollower
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46
ClassBOperationOverview
Quiescentstate(noinputsignal)bothtransistorsin
cutoff
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47
ClassBOperationOverview(Continued)
InputsignalgoespositiveQ1conductsandcouplesthepositive
halfcycleoftheinputsignaltotheload
InputsignalgoesnegativeQ2conductsandcouplesthenegative
halfcycleoftheinputsignaltotheload
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48
ClassBOperationOverview(Continued)
CrossoverDistortiondistortioncausedbyboth
transistorsbeingincutoffforashorttimebetweenthe
positiveandnegativealternationsoftheamplifier
inputsignal
PaynterandBoydell
49
DCOperatingCharacteristics
VCEQ
VCC
I CQ 0 A
PaynterandBoydell
50
ACOperatingCharacteristics
Z in rE
Ai h fc
Z in base RL
where
rE RE RL
since the load acts as the emitter resistor, rE R L , therefore

Ai h fc
Z in
Z in base
RL
Av
RL re'
Ap Av Ai
PaynterandBoydell
51
AmplifierImpedance
Z in base h fc re' RL
Z out
Rth
r
h fc
'
e
where
Rth' R1 R2 RS
PaynterandBoydell
52
PowerCalculations
RMSpowerformula:
Compliance(PP)
themaximum
undistorted
outputthatcanbe
provided
byanamplifier
PaynterandBoydell
VL2
PL
RL
PP 2 VCEQ
since VCEQ
VCC
,
2
PP VCC
53
PaynterandBoydell
54
DiodeBias(TheClassABAmplifier)
Usesapairofdiodesinplaceoftheresistor
betweenthetransistorbaseterminals
Calledcompensatingdiodes
Preventcrossoverdistortionandthermalrunaway
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55
DiodeBias(Continued)
Insert Figure 20.31
PaynterandBoydell
56
DiodeBiasDCCharacteristics
R1=R2
DiodeVoltages=0.7V
ResistorVoltages
VCC 1.4 V
VR
2
PaynterandBoydell
57
DiodeBiasDCCharacteristics(Continued)
EliminatingCrossoverDistortiondiodeskeep
transistorsbiasedslightlyabovecutoff
EliminatingThermalRunaway
ThermalRunawayaphenomenonwhereanincreasein
temperaturecanresultinatransistordrivingitselfinto
saturation
Diodesandtransistorbasejunctionsmustbeverynearly
perfectlymatched
Diodesandtransistorsmustbeinthermalcontact
PaynterandBoydell
58
20.8RelatedTopicsP1
AmplifierSwampingreducesvariationin
voltagegainbyincreasingtheacresistanceofthe
emittercircuit
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59
20.8RelatedTopicsP2
AmplifierSwamping(Continued)
rC
Av '
re rE
PaynterandBoydell
60
20.8RelatedTopicsP3
AmplifierSwamping(Continued)
TheEffectonGainStabilitySwampingimproves
gainstabilitybydecreasingtheeffectsof
temperaturechange
Z in base h fe r rE
'
e
TheEffectonBaseInputImpedanceSwamping
increasesthebaseinputimpedance
PaynterandBoydell
61
20.8RelatedTopicsP4
DarlingtonAmplifiers
Highsmallsignalcurrentgain(hfe=20,000atIC=10
mA)
Highbaseinputimpedance(22M)
PaynterandBoydell
62
20.8RelatedTopicsP5
TransistorPowerRequirementsPower
dissipationratingmustbesufficientforthe
application
PD VCEQ I CQ
ClassAPowerFormula:
ClassBandClassABPowerFormula
PD
PaynterandBoydell
2
VPP
40 RL
63

Transistor Biasing

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Transistor Biasing

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ElectronicsTechnologyFundamentals

I E = the dc emitter current

= the total ac resistance of the collector current

In most practical applications rE

= the base-to-emitter current gain of the

RS = the resistance of the signal source

since the load acts as the emitter resistor, rE R L , therefore

Insert Figure 20.31

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