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Semiconductors: Physics 355
Semiconductors: Physics 355
Semiconductors
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Diamond
In the diamond structure, the
Diamond
Electrons may be thermally
activated to jump a gap. At
room temperature, kBT is
only 0.026 eV. To jump the
energy gap, the electron
requires very high
temperatures. So, diamond
is an excellent insulator.
= 1018 -m
Graphite
= 9 -m
Silicon
Silicon has the diamond structure.
There are 14 electrons per primitive
cell.
Gap is only 1.12 eV, however.
Silicon
} 1.12 eV
d dk
dV
e
dk dt
dx
dk
dV
v g
e
dt
dx
d
dV
k e
dt
dx
vg
1 d
vg
dk
vg
d
k eE
dt
d 1 d 1 d d dk
a
dt
dt dk dk dk dt
1 d 2 dk 1 d 2 d
2
2
dk dt dk dt
1
me
eE = F
me 2
dk 2
mass.
One can show that a free electron band gives an effective
mass equal to the rest mass of an electron.
Electrons in a crystal are accelerated in response to an
external force just as though they were free electrons with
effective mass me.
Usually , me < m0.
Experimental Measurement
Traditionally effective masses were measured using cyclotron resonance,
1 d
0
2 dk 2
Carrier Concentration
To calculate the carrier concentrations in energy bands we
need to know the following parameters:
The distribution of energy states or levels as a function of
energy within the energy band, D().
The probability of each of these states being occupied by
an electron, f().
n f ( ) D( ) d
c
1 f ( )
D( ) d
The empty state and the unpaired electron for two times
are shown when an electric field is applied. The change
in momentum is in the direction of the field.
f ( ) D( ) d
dN ( )
1 2me
D( )
2 3
dE
2 h
3/ 2
e
1 e ( F ) / k BT
e ( c ) / k BT e ( c F ) / k BT
( c F ) / k B T
me k BT
N C 2
2
2
D( ) e
c / k BT
3/ 2
n NC e
F c / k B T
Conduction Band
Carrier Concentration
f h 1 f e 1 / k T
/ k T
F
B
B 1
e
1 e F
e F / k BT
(as long as F k BT )
The holes near the top of the valence band behave like
1 2mh
D( ) 2 2
2 h
3/ 2
mh k BT
p 1 f ( ) D( ) d 2
2
2 h
v
3/ 2
v F / k BT
Equilibrium Relation
Multiply n and p together:
3
k BT
3/2
np 4
m
m
h e
2
g / k BT
e
Intrinsic Semiconductors
n p ni
N c e F c / k BT N v e v F / k BT
Nc
c F F v
k BT ln
Nv
Nc
c v 1
F
k BT ln
2
2
Nv
c
F
v
Extrinsic Semiconductors
Extrinsic semiconductors: we can add impurities
F
A
v
Extrinsic Semiconductors
Extrinsic Semiconductors
Boron in Silicon
Semiconductors