COMSATS Institute of Information Technology

Sahiwal campus

Engr.M.Asif Imran
Engineerasif@ciitsahiwal.edu.pk
Ext:171
Electronics 1
EEE 231 BS Electrical Engineering
Spring Semester 2017
PRESENT POSITION
Lecturer
COMSATS CIIT, Sahiwal

ACADEMIC QUALIFICATIONS

M.S 2015 The Isliamia University of Bahawlpur,UCET

BEE 2008 CIIT,Abbottabad

FIELD OF SPECIALIZATION

Semiconductor Physics

Advance Electronics

Control System
1-Theory of Semiconductors

2-Diode Basics and Applications

3-Special Purpose Diodes

Short
4-BJT Basics and Configurations
Outilne
5-BJT Biasing and Applications

6-FET Basics and Configurations

7-FET Biasing and Applications

 Course Outline:
1 Semiconductor Materials-Introduction:
Band Theory of Solids
Band Gap and Material Classification
Semiconductor Materials

2 Charge Carriers and Carrier Transport in Semiconductors:

Electrons and Holes in Equilibrium
Carrier Densities: Fermi Dirac Distribution Function
Generation/Recombination
Mobility and Conductivity
Continuity Equations
Einstein Relation
 3 PN Junctions:
Fabrication Techniques (abrupt & linearly graded junctions)
P-N Junctions under Equilibrium Conditions:
- depletion region width
- builtinpotential
- Fermi levels and band bending
Junction Breakdown
I -V Characteristics of a PN Junction (biased junctions)

5 Bipolar Junction Transistors (BJT):

Fabrication Techniques
Principles of Transistor Action
Currents Flowing in a Transistor
6 Junction Field Effect Transistor (JFET):

Basic JFET Structure

Operation of a JFET
Characteristics of JFET

7 Optoelectronic Devices:
Solar Cells
Photodiodes
Semiconductor Lasers
Light Emitting Devices (LEDs)
 Outcome:

Upon completion of this course, the student will learn:

Understanding of the concept of band gap in semiconductors,

to distinguish direct and indirect band gap semiconductors,
and to relate the band gap with the wavelength of optical absorption
and emission.

Understanding of doping of semiconductors to determine the free carrier

concentration

Knowledge of the formation of p-n junctions to explain the diode operation

and to draw its I-V characteristics.

Understanding of the operation mechanism of solar cells, LEDs, lasers and

FETs, so that can draw the band diagram to explain their I-V characteristics and
functionalities.
Understanding of the operation mechanism of solar cells, LEDs, lasers and FETs,
so that can draw the band diagram to explain their I-V characteristics and
functionalities.

Ability to describe major growth techniques of bulk, thin film, and

nanostructured semiconductors.

Basic knowledge of doping, purification, oxidation, gettering, diffusion,

implantation, metallization, lithography and etching in semiconductor processing.
 An atom is made up of electrons, protons and
zero or some neutrons

Protons and neutrons are contained inside the

nucleus while electrons revolve around the
nucleus

Electrons can only revolve in discrete orbits Atomic

around the nucleus called shells with certain
energy levels associated with each shell. Structure
Each shell can accommodate a maximum of
2n2 electrons where n=1,2,3, are the shell
numbers

Each shell has n subshells. The first subshell

can have 2 electrons and every proceeding
subshell can have 4 electrons more than the
preceding subshell.
 The outermost shell is called valence shell
and the electrons in that shell are called
valence electrons

Valence electrons contribute to the

electrical properties of the atom
Atomic
The atoms with empty or partially filled Structure
valence shells are better conductors like
metals in the periodic table, whereas the
filled or almost filled valence shells make
an atom more insulated
 Conductivity of semiconductors lies
between conductors and insulators

Silicon and Germanium each belongs to IV

A and are well known semiconductors.

Both need 4 electrons to complete their Semiconduct

valence shell.
or Materials
Each atom of mentioned semiconductors
share their four electrons to form covalent
bonds with neighboring atoms and form a
crystal lattice
Silicon
Crystal
Lattice
 When an electron gets a specific amount of
energy it can jump to a higher shell.
Conversely, an electron can jump from a
higher shell to a lower shell and release
energy.

Conduction shell is the band of energy

levels where electrons are loosely attached
to an atom and can move freely. The
electrons in conduction shell are called free Conduction
electrons.
Shell and
The energy gap between conduction shell Band-gap
and valence shell is called forbidden gap.

Forbidden gap is very large in insulators,

moderate in semiconductors and very small
or none in metals.

Conductivity in semiconductors is directly

proportional to temperature.
Conduction
Shell and
Band-gap
 Current in conductors is due to free
electrons in the condition shell. The free
electrons are loosely attached to atoms
and can move freely around in metal
structure.

When an electron in valence shell of a

semi-conductor gets enough energy it
breaks the covalent bond and jumps to Current In
conduction band, leaving behind a
deficiency of charge called a hole. Semiconduct
ors
 Current in semiconductors is due to free
electrons as well as valence electrons (hole
current)

The number of holes and electrons in

intrinsic semiconductors are same i.e. ni =
pi

When a potential is applied drift current Current In

takes place which is the movement of charge Semiconductors
carriers due to the applied electric field.