Professional Documents
Culture Documents
刘谋明
刘谋明
.
1.
XPS ,
XPS 20 60 K.Siegbahn
20
K.Siegbahn 1981
K.Siegbahn
(Electron Spectroscopy for Chemical Analysis), ESCA
70 40
XPS
XPS
2. h
A+hA+*+e-
(Ek )
(h)
hv Eb Ek E E E
Einstein
hv Eb Ek E E E
( 0.1ev)
hv Eb Ek hv Eb Ek sp
h
h
Eb
Ek
sp
Eb hv Ek sp
sp
sp 4ev
xps
Eb
3.
1s / 2 s 20
N
N0
d
d = 3 N 0 5%
d = 3 N 0 95% d
= 3
n : n n=1,2,3..
l :
l=0,1,2,..(n-1)
m : m=-l,l-1.,0,-1,-l
ms : ms=1/2 1/2
j :
j
j =l+ms= l1/2
l = 0 s j = 1/2 1s , 2s , 3s
l = 1 p j = 1/2
3/2 2p1/2 2p3/2
l = 2 d j = 3/2
5/2 3d3/2 3d5/2
l = 3 f j = 5/2
7/2 4f5/2 4f7/2
4.
3 11 12 30 31 62 63 70 71 92
Li Na Mg Zn Ga Sm Eu Yb Lu U
1s 2p 3d 4d 4f
xps
.
1. PHI 5000 Versaprobe
117
Quartz Crystal
Electron Gun Monochromator
Analyzer
Input Lens
Raster Scanned
Micro-Focused
Electron Beam
Raster Scanned
Al X-rays Micro-Focused
X-ray Beam
Analyzer
Input Lens
Al Anode Sample
1.
XPS X
X
Mg Al
X
(eV) (eV)
K1 1253.6 67.0 1486.6 67.0
K2 1253.4 33.0 1486.3 33.0
K 1258.2 1.0 1492.3 1.0
K3 1262.1 9.2 1496.3 7.8
K4 1263.1 5.1 1498.2 3.3
K5 1271.0 0.8 1506.5 0.42
K6 1274.2 0.5 1510.1 0.28
K 1302.0 2.0 1557.0 2.0
X
10
eV 10 keV
X (1010) Bragg
X X
Al/Mg X
X
(eV)
Y M 132.3 0.44
Zr M 151.4 0.77
Na K 1041.0 0.4
Mg K 1253.6 0.7
Al K 1486.6 0.8
Si K 1739.4 0.8
Ti K1 4511 1.4
Cr K1 5415 2.1
Cu K1 8048 2.5
2.
10 -6
3.
-4
10 -13 -9
~ 10 A 10 ~ 1A
PSD
10 9
4.
298K
10 -4Pa 1 10 -7Pa
1000
.
1. wide scan or survey scan)
wide
F1s
O1s
FKLL
OKLL
intensity(a.u.)
Sn3p
C1s
Cu2p
Sn3s
Sn3d
P b4f
S2p
Si2p
O2s
1200 1000 800 600 400 200 0
Binding Energy (ev)
AlKa MgKa 0 1000ev
1200ev
H He
2.
C Sn
3d5/2
C1s
284.8 486.7
C1s 3d3/2
286.35
intensity(a.u.)
intensity (a.u.)
C1s
288.8
10 50ev
3.
wide
Ag3d5/2
Ag3p3/2
Ag3d3/2
O1s
Ag3p1/2
intensity (a.u.)
C1s
Ag4s
Ag4d
600 500 400 300 200 100 0
Binding Energy (ev)
n n
n l l
J J
( J = L S )
Au
.
1.
XPS
X X X
V S
,
E c <0.1eV
(CH 2 ) n C 1s
284.6 eV 284.8 eV
Au4f 7/2
C1s
Ar Ar
2.
XPS
C1s
4
3.
wide
F1s
O1s
FKLL
OKLL
intensity(a.u.)
Sn3p
C1s
Cu2p
Sn3s
Sn3d
P b4f
S2p
Si2p
O2s
4.
http://www.lasurface.com/database/elementxps.php
5. -
0.2ev
-
Ir 2(l 1 / 2) 1 / 2(l 1 / 2) 1 1 1 / l
Ca
2P 3/2
P3/2/P1/2 = 2:1
counts (c/s)
2P 1/2
d5/2/d3/2 = 3:2
f7/2:f5/2 = 4:3
3d5/2 Pb4f7/2
3d3/2 Pb4f5/2
counts (c/s)
counts (c/s)
500 495 490 485 480 150 145 140 135 130
Binding Energy (ev) Binding Energy (ev)
wide
Ag3d5/2
Ag3p3/2
Ag3d3/2
O1s
Ag3p1/2
intensity (a.u.)
C1s
Ag4s
Ag4d
600 500 400 300 200 100 0
Binding Energy (ev)
3p 3d 4p 4d
4f
Au
4p 4d 4f
6.
(shake-up)
(shake-off)
shake-off shake-up
Ne1s
3d 4f
Cu Cu 2+ 2p
shake-up
shake-up
shake-up
shake-up
shake-up
284.75
x 10
/
C 60
284.6
x5
x5
sp 2
sp 2
C 60 5
plasmon)
XPS
(4 f ) 4 s
3 d 3 s
Mn2+ 3s
MnF2 Mn3s
110 100 90 80
Auger
XPS KLL, LMM, MNN NOO Auger
Auger
X
X X
XPS K 1,2
X
X X
X
Mg Al
C, O C, O
Auger C, O
p, d, f
p 1:2 d 2:3 f
3:4 p 4p 1:2
.
1.
C O ,
2. (atomic sensitivity factor)
I nfyAT
n f x
y
A T
s fyAT
n1 I 1 / s1
n I /s
n2 I 2 / s2
nx Ix / sx
Cx
ni Ii / si
i i
X
i
xps
xps 3 5nm
Atomic Concentration Table
--------------------------
C1s O1s Mg2p Cu2p3
1.000 0.733 0.167 2.626 RSF
48.945 17.215 4.500 150.493
Corrected RSF
2.88 59.71 34.07 3.34
.
1.
Ar
1m
XPS ,
XPS
X 4
XPS X XPS
XPS
Ti, Mo, Ta
SiO 2 50nm/min
SiO 2-SiON-Si
Zalar Depth Profile with 500eV Ions
100
Ni 2p Cr 2p Ni 2p Cr 2p Si 2p
80
Atomic Concentration (%)
60
40 O 1s
20
0
0 Sputter Depth (nm) 185
,
x
10mm, 5 mm
XPS
X
X
.XPS
XPSpeak , origin
XPS C. D. Wagner, W. M. Riggs, L. E. Davis, et al., Handbook of X-ray
photoelectron spectroscopy [M], (G. E. Muilenberg, editor) Perkin Elmer
Corporation (Physical Electronics), 1979
http://www.lasurface.com/database/elementxps.php
XPS XPS