IV.

4 Signal-to-Noise Ratios

Background
Example

IV.4.1
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Background
Motivation

Wouldnt it be Nice to Have a Single

Performance Measure that
Simultaneously Identified Factor
Settings that
Optimally target the mean
Reduce variation

This is the Major Motivation

Underlying Taguchis Use of Signal-to-
Noise Ratios.

IV.4.2
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Background
Some Popular S/N Ratios
Taguchi proposed OVER 80 signal-to-noise (S/N) ratios. The following three are among his most widely applicable. Our goal is to MAXIMIZE all three.

SNs = -10 log(y2/n)

What are the optimal values for y i?
Used when smaller is better
SNL = -10 log(y2)/n)
What are the optimal values for y i?
Used when larger is better
SNT = 10 log(y2/s2)
Ostensibly used when target is better
How does SNT measure proximity to target?

IV.4.3
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Background
Criticisms of Taguchis S/N Ratios

SNs and SNL

y will almost always be a more sensitive
measure of the size of effects on the mean

SNT
If y and s are independent, we can look at them
separately to make better decisions
y and s are frequently directly related, a
situation SNT will not detect

IV.4.4
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6
Growing an Epitaxial Layer on Silicon Wafers
Figure 12 - Wafers Mounted on Susceptor
Kacker, R. N. and Shoemaker, A. C. (1986). Robust Design:
A Cost-Effective Method for Improving Manufacturing
Processes AT&T Technical Journal 65, pp.311-342.

IV.4.5
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6
Growing an Epitaxial Layer on Silicon Wafers
Figure 13 - Initial and Test Settings
The response variable is thickness of
epitaxial layer in m with a target of
14.5 m. Which factors will affect
mean?
variation?

Control Initial Test Test

Parameter Setting Setting0 Setting1
A.Susceptorrotationmethod Oscillating Continuous Oscillating
B.CodeofWafers 668G4 678D4
C.DepositionTemperature 1215oC 1210oC 1220oC
D.DepositionTime Low High Low
E.ArsenicFlowRate 57% 55% 59%
F.HydrochloricAcidEtchTemperature 1200oC 1180oC 1215oC
G.HydrochloricAcidFlowRate 12% 10% 14%
H.NozzlePosition 4 2 6
IV.4.6
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6
Growing an Epitaxial Layer on Silicon Wafers
Figure 14 - The Experimental Design
Each experimental run results in 70
observations on the response!
Run
Number A B C D E F G H
1 Cont 668G4 1210 High 55 1180 10 2
2 Cont 668G4 1210 High 59 1215 14 6
3 Cont 668G4 1220 Low 55 1180 14 6
4 Cont 668G4 1220 Low 59 1215 10 2
5 Cont 678D4 1210 Low 55 1215 10 6
6 Cont 678D4 1210 Low 59 1180 14 2
7 Cont 678D4 1220 High 55 1215 14 2
8 Cont 678D4 1220 High 59 1180 10 6
9 Osclt 668G4 1210 Low 55 1215 14 2
10 Osclt 668G4 1210 Low 59 1180 10 6
11 Osclt 668G4 1220 High 55 1215 10 6
12 Osclt 668G4 1220 High 59 1180 14 2
13 Osclt 678D4 1210 High 55 1180 14 6
14 Osclt 678D4 1210 High 59 1215 10 2
15 Osclt 678D4 1220 Low 55 1180 10 2
16 Osclt 678D4 1220 Low 59 1215 14 6
IV.4.7
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6
Growing an Epitaxial Layer on Silicon Wafers
Figure 14 - The Experimental Design

Note that the design here is non-

standard
Can you assign factors to columns
A, B, C, and D in the 16-run signs
table?
Hint: the original factors A, B, C and D
cannot be used to generate the design
Which columns would the other 4
factors be assigned to in the 16-
run signs table?

IV.4.8
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 - Analysis Using Only SNT
Growing an Epitaxial Layer on Silicon Wafers
Figure 16a - Completed Response Table

IV.4.9
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 - Analysis Using Only SNT
Growing an Epitaxial Layer on Silicon Wafers
Figure 17 - Effects Normal Probability Plot

.999
.99
H
.95
.80
.50
.20
A
.05
.01
.001

-4 -3 -2 -1 0 1 2 3 4 5 6
Effects
A-Squared: 0.550

IV.4.10
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 - Analysis Using Only SNT
Growing an Epitaxial Layer on Silicon Wafers
Interpretation

What factors favorable affect SNT?

A (susceptor rotation method) set at continuous
H (nozzle position) set at 6.

IV.4.11
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 Analysis Using Mean and Log(s)
Growing an Epitaxial Layer on Silicon Wafers
Figure 18a - Response Table for Mean

IV.4.12
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 Analysis Using Mean and Log(s)
Growing an Epitaxial Layer on Silicon Wafers
Figure 19a - Response Table for Log(s)

IV.4.13
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 Analysis Using Mean and Log(s)
Growing an Epitaxial Layer on Silicon Wafers
Figure 20 - Effects Normal Probability Plot for Mean

.999
.99
H
.95
.80
.50
.20
.05
D
.01
.001

-0.8 -0.4 0.0

Effects

IV.4.14
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 Analysis Using Mean and Log(s)
Growing an Epitaxial Layer on Silicon Wafers
Figure 21 - Effects Normal Probability Plot for Log(s)

.999
.99
A
.95
.80
.50
.20
D
.05
H
.01
.001

-0.3 -0.1 0.1

Effects

IV.4.15
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 Analysis Using Mean and Log(s)
Growing an Epitaxial Layer on Silicon Wafers
Interpretation

What factors affect the mean?

D (deposition time) set at high level increases

the mean.
What factor settings favorably affect
variability?
A (susceptor rotation method) set at
continuous.
H (nozzle position) set at 6.
D (deposition time) set at low.

IV.4.16
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.
 Example 6 Analysis Using Mean and Log(s)
Growing an Epitaxial Layer on Silicon Wafers
Interpretation

Conclusions:
Set nozzle position at 6
Use continuous susceptor rotation method
Use deposition time to adjust mean to target

IV.4.17
TheCenterforReliabiltyandQualitySciences
DepartmentofStatistics
TheUniversityofSouthCarolina.
Copyright1997D.Edwards,J.GregoandJ.Lynch.AllRightsReserved.