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Materials Science and Engineering: An Introduction To Chemical Engineers (Cheg-3171)
Materials Science and Engineering: An Introduction To Chemical Engineers (Cheg-3171)
(ChEg-3171)
http://www.rsc.org/chemistryworld/2013/10/crystal-within-crystal-molecular-tectonics
Defects
Processing determines the defects
Composition
Thermomechanical
Processing
Microstructure
ISSUES TO ADDRESS...
What are the solidification mechanisms?
Vacancy
distortion
of planes
Self-Interstitials:
-"extra" atoms positioned between atomic sites.
self-interstitial
distortion
of planes
Selfc05f01
Interstitials
Cation Interstitial
Cation Vacancy
Anion Vacancy
Equilibrium Concentration:
Point Defects
Nv Q
No. of potential exp v
N kT
defect sites.
Temperature
Boltzmann's constant
(1.38 x 10 -23 J/atom-K)
(8.62 x 10 -5 eV/atom-K)
Each lattice site
is a potential
vacancy site
Measuring Activation Energy
Nv Nv slope
ln
N N
-Qv /k
exponential
dependence!
T 1/T
defect concentration
Note: for MOST MATERIALS just below Tm Nv/N = 10-4
Estimating Vacancy Concentration
OR
n m1
atom percent C
'
1 x 100
n m1 n m 2
slip steps
b
Dislocation
line
Burgers vector b (b)
(a)
Adapted from Fig. 4.4, Callister 7e.
Edge, Screw, and Mixed
Dislocations
Mixed
Edge
Porosity
Inclusions
Cracks
These defects form during manufacturing processes
for various reasons and are harmful to the material.
Bulk
defects
crystallographic planes
Adapted from Fig. 4.13(b) and (c), Callister
7e. (Fig. 4.13(c) is courtesy
of J.E. Burke, General Electric Co.
Micrograph of
brass (a Cu-Zn alloy)
0.75mm
Optical Microscopy
Grain boundaries...
are imperfections,
are more susceptible
to etching,
may be revealed as polished surface
dark lines,
change in crystal surface groove
orientation across grain boundary
(a)
boundary. Adapted from Fig. 4.14(a)
and (b), Callister 7e.
ASTM grain (Fig. 4.14(b) is courtesy
of L.C. Smith and C. Brady,
size number the National Bureau of
Standards, Washington, DC
1 cm 100 m 10 m 100 nm