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Ee 587 Soc Design & Test
Ee 587 Soc Design & Test
EE 587
587
SoC
SoC Design
Design &
& Test
Test
Partha Pande
School of EECS
Washington State
University
pande@eecs.wsu.edu
Test
Test Methodologies,
Methodologies, and
and Yield
Yield
Determine requirements
Write specifications
Test development
Fabrication
Manufacturing test
Chips to customer
Definitions
Definitions
Test Test
input output
Present
Present and
and Future*
Future*
Good chips
Faulty chips
Defects
Wafer
Unclustered defects Clustered defects (VLSI)
Wafer yield = 12/22 = 0.55 Wafer yield = 17/22 = 0.77
Yield
Yield Parameters
Parameters
Defect density (d ) = Average number of
defects per unit of chip area
Chip area (A)
Clustering parameter ()
Negative binomial distribution of defects,
p (x ) = Prob (number of defects on a chip = x )
(+x ) (Ad /) x
= ------------- . ----------------------
x ! () (1+Ad /) +x
where is the gamma function
=0, p (x ) is a delta function (max. clustering)
= , p (x ) is Poisson distr. (no clustering)
Yield
Yield Equation
Equation
Y = ( 1 + Ad / )
Unclustered defects: = , Y = e - Ad
Example: Ad = 1.0, = , Y = 0.37
too pessimistic !
Defect
Defect Level
Level or
or Reject
Reject Ratio
Ratio
Y (T ) = (1 + TAf / ) -
Assuming that tests with 100% fault coverage
(T =1.0) remove all faulty chips,
-
Y = Y (1) = (1 + Af / )
Defect
Defect Level
Level
Y (T ) - Y (1)
DL (T ) = --------------------
Y (T )
( + TAf )
= 1 - --------------------
( + Af )
Where T is the fault coverage of tests,
Af is the average number of faults on the
chip of area A, is the fault clustering
parameter. Af and are determined by
test data analysis.
Test
Test Coverage
Coverage from
from Fault
Fault
Simulator
Simulator
Stuck-at fault coverage
Vector number
Measured
Measured Chip
Chip Fallout
Fallout
Measured chip fallout
Vector number
Model
Model Fitting
Fitting
Chip fallout vs. fault coverage
Chip fallout and computed 1-Y (T )
Y (1) = 0.7623