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Switching and Triggering Devices
Switching and Triggering Devices
Power Electronics
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History of Power Electronics
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Applications of Power Electronics
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Applications of Power Electronics
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Applications of Power Electronics
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Power Semiconductor Switching Devices
Diodes
Bipolar Junction Transistor (BJT)
Metal-Oxide-Semiconductor Field-Effect
Transistor (MOSFET)
Insulated Gate Bipolar Transistor (IGBT)
Silicon Controlled Rectifier (SCR)
Gate Turn off Thyristor (GTO)
TRIAC
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Triggering Devices
DIAC
UJT
PUT ( Programmable Unijunction Transistor )
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Applications and Frequency Range of Power Devices
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Power Semiconductor Diode
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Diode Characteristics
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Schockley Diode Equation
Forward-biased region
Reverse-biased region
Breakdown region
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Power Diode Types
1.General purpose diodes
2.Fast Recovery Diodes
3.Schottky Diodes
Diode Ratings
Current Ratings: Less than 1A ~ 4500A
Voltage Ratings: 50 volt ~ 6000 volt
On state resistance: Around 0.32 m
Switching Time: 5 ~ 100 s
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Power BJT
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Cross Section of BJTs
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BJT Characteristics
Cutoff mode
Active mode
Saturation mode
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BJT Switching Characteristics
Internal capacitances
Turn-on time
Turn-off time
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BJT Ratings
Ratings up to 1200V / 400A.
Normally operated as a switch in
CE configuration.
Max. operating Frequency: 400Hz.
Switching time: 200 to 400sec.
On state resistance: 3.6m.
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Power MOSFET
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n-channel Enhancement MOSFET Characteristics
Triode Saturation
Cutoff
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MOSFET Switching Characteristics
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Advantages of MOSFET
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Power MOSFET Ratings
Used in high speed power converters
like inverters & choppers.
Ratings up to 1000V / 100A.
Max. Frequency: 100KHz.
Switching time: 1.6sec.
On state resistance: 1.2m.
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IGBT ( Insulated Gate Bipolar Transistor)
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Applications of IGBT
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IGBT Ratings
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SCR (Silicon Controlled Rectifier) / Thyristor
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SCR Symbol
Three PN junctions
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Cross section of PNPN structure
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Anode current
Latching current IL
Minimum anode current
to maintain ON state
immediately after SCR has
been turned ON.
Holding current IH
Minimum anode current
to maintain ON state
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Thyristor Turn-ON
Light
High voltage
dv/dt .> high
Gate current.> applying positive gate pulse
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Thyristor Turn-OFF (Commutation )
1. Reducing anode
current below
holding current
2. Forced- commut
ation
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SCR Ratings
Line Commutated Thyristors available
up to 6000V, 4500A.
Max. Frequency: 60Hz.
Switching time: 100 to 400sec.
On state resistance: 0.45m.
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TRIAC (Triode AC )
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I-V Characteristics of TRIAC
Turn-ON
Applying positive
or negative pulse
between Gate and
MT1
Turn-OFF
Reducing current
to zero
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Example of TRIAC Ratings
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Circuit diagram using TRIAC
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GTO (Gate turn off thyristor )
Gate turn off thyristor (GTO) is a four layer
PNPN power semiconductor switching device.
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Advantages of GTO
There is no need for an external commutation
circuit to turn it off.
Inverter circuits built by this device are
compact and low-cost.
GTO is turned off by a negative gate pulse
Reduction in acoustic and electro-magnetic
noise
Faster turn-off
Improved efficiency
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DIAC ( Diode AC)
The DIAC is a diode that
conducts electrical current in
either direction only after its
breakover voltage, VBO, has
been reached momentarily.
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UJT ( Unijunction Transistor)
A unijunction transistor (UJT) is
a three-lead electronic
semiconductor device with
only one junction that acts
exclusively as an electrically
controlled switch.
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= Intrinsic
stand off
ratio
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PUT (Programmable Unijunction Transistor
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Application of PUT
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Different types of Power Converters
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