GYAN GANGA

INSTITUTE OF TECHNOLOGY AND

MANAGEMENT
 INTRODUCTION
TRANSISTOR+ LASER= TRANSISTOR LASER

The transistor laser combines the functions of both a transistor and a

laser by converting electrical input signals into two output signals,
one electrical and one optical.
 HOW TRANSISTOR LASERS
ARE MADE?

-Bipolar Junction Transmitter (BJT), semiconductor device uses

electrons and holes to carry the main electric current.

-Two back to back diode separated by a thin connection layer, a

base layer.

-The quantum well is a layer of Indium-gallium-arsenide (10

nanometers thick). Inserted into the HBT (heterojunction bipolar
transistor) base region.
 WORKING
When voltage is applied to the base-emitter junction, injected electrons from
the emitter diffuse across the base.

The base is thin enough that most of the electrons can pass through to the
collector before recombining with holes in the p-type base.
The semiconductor compounds in the
transistor laser are Gallium-Arsenide
and Indium-Gallium-Phosphide.

These are direct band-gap materials,

an electron that has been excited into
the conduction band can easily fall
back to the valence band through the
creation of a photon (of little
momentum) whose energy matches
the band-gap energy.

So, these materials will readily produce light (photons)….

A voltage at the emitter
injects electrons in the well,
more electrons combine
with holes, a process which
emits light.
Electrons that don’t recombine with
holes in the well exhibits a current
gain.
The light is reflected off
mirrors around the inside of
the well to form a resonant
cavity and increasingly
stimulated until a beam of
laser light escapes.
Courtesy ieee.spectrum.org
The device can be switched on
and off rapidly (billions of
switches per second), and
produces optical and electrical
signals.
 - Quantum well acts as a recombination center governs the flow of
charge from the emitter to the collector.

- This process decreases the current gain of the transistor by

approximately 90%.

-To turn this light into a laser beam, the edges of the transistor are
modified, creating a resonant cavity, stimulating the emission of
additional photons that are in phase with the others generated in the
region.
DIODE LASER AND TRANSISTOR LASER
Injected carriers congregate in the
quantum well, where they recombine to
emit radiation.
At high drive frequencies, the optical
response of the diode laser, indicated in
red, does not follow the drive-current
modulation, indicated in blue (b).
In the reverse-biased collector
draws electrons out of the base region,
reducing the carrier lifetime.
The result is a much faster response
which enables transistor sources to
operate at higher data transmission rates
(b).
 APPLICATIONS
-Optical interconnects replaces
the
wiring between components.

-As dual input, high frequency

processor.

-Offer signal mixing and

switching
capabilities.

-Offer potential for Broadband

Communication.
 FUTURE TRENDS

-Ultra-fast transistor lasers could

extend the modulation bandwidth
from 20 GHz to 100 GHz.

-Faster internet connections and

high definition video on cell phones.

-Used as optoelectronic interconnects –

transistor lasers facilitate faster signal processing,
 CONCLUSIONS
-Reduced carrier life time enables to operate at high data transmission
rate.

-Speed can be increased by improving optical signal intensity.

 THANK YOU….

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