Ultrathin Body SOI MOSETs

VLSI Design Techniques Course Project

Ronak Jaiswal (B14EE013)
Jay Sheth (B14EE014)
What is SOI?

 SOI uses Silicon On Silicon insulator instead

of Si substrate only
 SOI is used to reduce parasitic device Bulk MOSFET
capacitance which improves the
performance
 The choice of insulator can be varied
depending on the requirement
 UTB-SOI suppress Short Channel Effects,
scale gate length and reduce sub-threshold
gate leakage current.

SOI MOSFET
Performance of SOI

 90% lower junction capacitance; near ideal sub-threshold swing; reduce

device cross-talk;
 Lower junction leakage -> low switching energy of the transistor
 Do not suffer from substrate reverse bias effects -> low-power devices.
 Better electrostatic control: reduce S-D leakage and SCE.
 Full dielectric isolation of the transistor
 Reduced junction area
 Impact ionization strongly balanced by thermal recombination.
 Critical drawback as: floating body effects: body potential shifts –shift in 𝑉𝑡 ,
sub-threshold swing, and kink effects: minimized by thinner silicon.
Types of SOI Devices

 Two types of SOIs

1. Partially Depleted (PDSOI)
2. Fully Depleted (FDSOI)
 FDSOI is preferred over PDSOI because
1. Thinner size
2. Reduced leakage current
3. Improved power consumption characteristics
PDSOI vs FDSOI
PDSOI
 Insulating BOX thickness is 100 to
200nm
 Top silicon layer 50 to 90nm
 Used in analog circuit
 Easy to manufacture
 Drawback: packaging scalability
FDSOI
 Insulating BOX thickness is 5 to
50nm
 Top silicon 5 to 20nm
 Low power applications
 Leakage and power consumption
reduced drastically
 Drawback: complex fabrication
process
FDSOI: Ultrathin Body SOI

 PDSOI is the same in operation as bulk transistors

except for the Floating Body Terminals Effects
 In FDSOI case, the front and back channels are electro-
statically coupled during device operation
 This electrostatic coupling, makes the front channel FD
device parameters dependent on the back gate voltage,
including drain current, threshold voltage, sub-threshold
slope etc.
Parasitic Capacitances
Carrier Mobility Considerations

Carrier mobility for a given 𝑉𝐺𝑆 .

µ
µ𝑛0 = 1+Ѳ𝑉0
𝐺𝑆𝑇
𝛽𝜃
Where 𝜃 =
𝑡𝑓𝑜𝑥

Carrier mobility as a function of 𝑉𝐶𝑆

µ𝑛0
µ𝑛 𝑦 = µ 𝑑𝑉 ′ 𝑦
1+ 𝑛0 𝑐𝑠
𝑣𝑠𝑎𝑡 𝑑𝑦

where 𝑉𝑐𝑠 𝑦 = 𝑉𝑐𝑠′ 𝑦 + 𝐼𝐷𝑆 𝑅𝑠

𝑣𝑠𝑎𝑡 is saturation velocity for electrons
µ0 is carrier mobility of electrons at temperature 𝑇0
 Inversion Charge Considrations

𝑄𝑖′ = −𝐶 ′𝑓𝑜𝑥 𝑉𝐺𝑆𝑇 − 𝑉𝐶𝑆 ′ 𝑦 − 𝛾 ′ −𝐵 + 𝐷 + 𝑉𝐶𝑆 𝑦 ′

+ 𝐶𝑓𝑜𝑥 𝐼𝐷𝑆 𝑅𝑆
′
𝐶𝑏𝑜𝑥
Where 𝐵 = 0.5𝛾𝑠𝑢𝑏𝑠 (1 + ′ )
𝐶𝑆𝑖

𝐷 = 𝐵2 − 𝛼 + 𝜙0 + 𝑉𝑆𝐵 and
𝑉𝑇 = 𝑉𝐹𝐵 +𝜙0 + 𝑞𝑁𝑐ℎ 𝑡𝑆𝑖ൗ𝐶 ′
𝑓𝑜𝑥

′ ′
𝛾 ′ = 𝛾𝑠𝑢𝑏𝑠 𝐶𝑏𝑜𝑥 /𝐶𝑓𝑜𝑥
2
𝛼 = 𝑞𝑁𝑐ℎ 𝑡𝑠𝑖 /2𝜖𝑠
Drain Current Considerations

Using the drift-Diffusion, equation for channel current Current equation can be
obtained.
𝑉 ′ ′
𝐻[𝑉𝐺𝑆𝑇ƞ − 𝐷2 𝑆 ]𝑉𝐷′ 𝑆′
𝐼𝐷𝑆 = µ
𝐿 + 𝑣 𝑛0 +𝐻𝑅𝑆 𝑉𝐷′ 𝑆′
𝑠𝑎𝑡
′
where 𝐻 = 𝑊µ𝑛0 𝐶𝑓𝑜𝑥
𝑉𝐺𝑆𝑇ƞ = 𝑉𝐺𝑆𝑇 − ƞ
γ′ δ γ′
Ƞ= − ɸ𝑡 (1 + )
2𝐵 2 𝐷

δ = ɸ0 − α + 𝑉𝑆𝐵
Drain Current …
Solution of above equation is

−𝑃1 − 𝑃12 − 4𝑃2 𝑃0

𝐼𝐷𝑆 =
2𝑃2

𝐻𝑅𝑇 (𝑅𝑆 −𝑅𝐷 ) 𝑅𝑇 µƞ0

where 𝑃2 = +
2 𝑣𝑠𝑎𝑡

𝑅𝐷 𝑉𝐷𝑆 𝑉𝐷𝑆 µƞ0

𝑃1 = −𝐻𝑅𝑇 𝑉𝐺𝑆𝑇ƞ − −𝐿−
𝑅𝑇 𝑣𝑠𝑎𝑡

𝑉𝐷𝑆
𝑃0 = 𝐻 𝑉𝐺𝑆𝑇ƞ − 𝑉𝐷𝑆
2
 Drain Current …
Using the equation of 𝐼𝐷𝑆 we can obtain 𝑉𝑑𝑠𝑎𝑡

−G1 − G12 − 4G2 G0

vdsat =
2G2
where G2 = 𝐻Γ 2 [2𝑢 + 𝐻(𝑅𝑆 − 𝑅𝐷 )]𝑅𝑇
G1 = 2𝐻𝑅𝑇 (Γ + 1) L − H𝑅𝑇 𝑉𝐺𝑆𝑇ƞ Γ
G0 = (H𝑅𝑇 𝑉𝐺𝑆𝑇ƞ Γ − 𝐿)2 −(H𝑅𝑇 𝑉𝐺𝑆𝑇ƞ + 𝐿)2

µƞ0 𝑢+𝐻𝑅𝑠
with u = and Γ =
𝑣𝑠𝑎𝑡 𝑢−𝐻𝑅𝐷

Substituting the value of 𝑉𝑑𝑠𝑎𝑡 in the channel current equation we can obtain 𝐼𝑑𝑠𝑎𝑡
VGSTƞ −Vdsat
Idsat = u
−R H D
Channel Length Modulation
Channel length modulation
L𝑒𝑓𝑓 = 𝐿 − ΔL
VDS −Vdsat
where ΔL = Ɩa ln[ 1 + ]
VE
1 1Τ 1Τ
with Ɩa ≃ (0.22 cm Τ6 )𝑑𝑗 2 𝑡𝑜𝑥3 d𝑗 being drain junction depth
V𝐸 ≃ 0.1 V (Experimentally calculated)
The coefficients get updated to following as equation of I𝐷𝑆 changes
′
𝑊𝐶𝑓𝑜𝑥 𝑅𝑇 (𝑅𝑆 −𝑅𝐷 ) 𝑅𝑇 2𝐴L𝑒𝑓𝑓 𝑉𝐷𝑆
𝑃2 = 2
+𝑣 − µna
𝑠𝑎𝑡
′ 𝑅𝐷 𝑉𝐷𝑆 L𝑒𝑓𝑓 𝑉
𝑃1 = −𝑊𝐶𝑓𝑜𝑥 𝑅𝑇 𝑉𝐺𝑆𝑇ƞ − − − 𝑣 𝐷𝑆
𝑅𝑇 µna 𝑠𝑎𝑡
′ 𝑉𝐷𝑆
𝑃0 = 𝑊𝐶𝑓𝑜𝑥 𝑉𝐺𝑆𝑇ƞ − 𝑉𝐷𝑆
2
Advantages of FDSOI (UTB SOI)

 Small and well-controlled channel thickness; high series resistance

 Reduced floating body effects compared to PDSOI.
 Thin body thickness; Improved transistor sub-threshold swing due to
greatly improved gate control
 Reduced parasitic capacitances from the absence of depletion
capacitances, leading to improved speed (due to complete isolation of
p and n wells)
 Reduced antenna issues
 No body or well taps are needed
Advantages …

 Reduced power consumption due to better isolation of body terminal

reduces the leakage current
 Higher performance at equivalent 𝑉𝑑𝑑 . Can work at low 𝑉𝑑𝑑 .
 Reduced temperature dependency due to no doping
 Variation of 𝑉𝑡 due to variation of body thickness overcomes all other
factors in UTB-SOI devices
 Improved channel mobility due to reduced transverse electric field
Drawbacks of FDSOI (UTB SOI)

 The primary barrier to SOI implementation is the drastic increase in

substrate cost, which contributes an estimated 10–15% increase to
total manufacturing costs.
 It has higher manufacturing process complexity due to the BOX layer
 The buried oxide layer and concerns about differential stress in the
topmost silicon layer.
 Reduces parasitic drain-to-body capacitance but drain field fringe
increases DIBL and hence, gate current is worst at short-channel.
Applications

 The buried oxide layer can be used in SRAM memory

 High Performance microprocessors: due to higher performance, lower
dynamic and static power and better immunity to soft errors.
 In high performance radio frequency applications
 Low Power Applications like laptops etc.
 Used in photonics
 In MEMS (Micro-Electro-Mechanical Systems) like Sensors etc.
References
1. Pandey, R. & Dutta, A.K. Semiconductors (2013) 47: 1224.
https://doi.org/10.1134/S1063782613090182
2. S. Deb et. al (2010). Analytical model of threshold voltage and sub-threshold slope of
SOI and SON MOSFET: A comparative study. Journal of Electron Devices, Vol. 8, 2010,
pp. 300-309
3. https://en.wikipedia.org/wiki/Silicon_on_insulator
4. https://en.wikipedia.org/wiki/Floating_body_effect
5. J. Knoch, M. Zhang, S. Mantl, J. Appenzeller, "On the performance of single-gated
ultrathin body SOI Schottky-barrier MOSFETs", IEEE Trans. Electron Devices, vol. 53,
no. 7, pp. 1669-1674, Jul. 2006.
6. J. Knoch, M. Zhang, Q. T. Zhao, S. Lenk, J. Appenzeller, S. Mantl, "Effective Schottky-
barrier lowering in silicon-on-insulator Schottky-barrier metal–oxide–semiconductor
field-effect transistors using dopant segregation", Appl. Phys. Lett., vol. 87, no. 26,
pp. 263505-1-263505-3, Dec. 2005.
Thank You