Professional Documents
Culture Documents
L1800 SINR Clarification: Huawei Technologies Co., LTD
L1800 SINR Clarification: Huawei Technologies Co., LTD
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 2
Cause 1: Why 4T4R impact on SINR
• Average SINR: S / (N + I)
› S: The signal strength of RS RE
R0 R0
R0 R0 R1 R1
increased by 3dB. R0 R0 R1 R1
l0 l6 l0 l6 l0 l6 l0 l6
› RS RE position are different in 4 antennas, so the average
RS RE power is same as 2T2R network.
› PDSCH RE position are same in 4 antennas, so the R0 R0 R1 R1 R2 R3
decreased even-numbered slots odd-numbered slots even-numbered slots odd-numbered slots even-numbered slots odd-numbered slots even-numbered slots odd-numbered slots
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 3
Huawei Lab Test Result (1)
One test service cell and one neighbor cell are configured in the test, two UEs at far point access in the two cells
and start traffic. Then observe the SINR and DL Throughput in the service cell.
--Case1: Test service cell and neighbor cell are configure 4T;
--Case2: Test service cell and neighbor cell are configure 2T;
The test result was shown as below, it is expectable that SINR in 4T cell is about 3dB less than SINR in 2T cell . And DL
Throughput in 4T cell is much more than that in 2T cell.
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 4
Huawei Lab Test Result (2)
One test service cell and one neighbor cell are configured in the test, two UEs at midrange point access in the two cells
and start traffic. Then observe the SINR and DL Throughput in the service cell.
--Case1: Test service cell and neighbor cell are configure 4T;
--Case2: Test service cell and neighbor cell are configure 2T;
The test result was shown as below, it is expectable that SINR in 4T cell is about 3dB less than SINR in 2T cell . And DL Throughput in
4T cell is much more than that in 2T cell.
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 5
SINR L1800 L2100
Page 6 Page 6
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR
Cause 2: PA/PB Setting Impact SINR
PA/PB = (-3, 1), RS Power = 18.2dBm PA/PB = (0, 0), RS Power = 15.2dBm
PA/PB (-3, 1) (0, 0)
* Test at CA110 @ No Load
SINR 19.86dB 17.85dB
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 7
Cause 3: L1800 High Load
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 8
Summary
HUAWEI TECHNOLOGIES
HISILICON CO., LTD.
SEMICONDUCTOR Page 9
Thank you
www.huawei.com