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EE-906 Solid State Electronics
EE-906 Solid State Electronics
IN 1ST CLASS OF 3RD , 5TH , 9TH , 11TH, 15TH & 17TH CLASS
COURSE PLANNED-EE-906
”SOLID STATE ELECTRONICS”
ASSIGNMENTS:
GRADING SCHEME:
QUIZZES: 10-15 Marks
ASSIGNMENTS: 05-10 Marks
SESSIONALS: 25-35 Marks
FINAL EXAM: 40-60 Marks
CODE OF ETHICS
• All students must come to class on time (Attendance will
be taken in first 5 to 10 mins)
• Students should remain attentive during class and avoid
use of Mobile phone, Laptops or any gadgets
• Obedience to all laws, discipline code, rules and
community norms
• Respect peers, faculty and staff through actions and
speech
• Student should now be sleeping during class
• Bring writing material and books
• Class participation is encouraged
Semiconductor Materials
R L
WT
T
L
Resistivity is:
metals: < 10-3 -cm
insulators: >102 -cm
semiconductors: 10-3 -cm < < 102 -cm
17
Semiconductor Materials
18
Semiconductor Materials
Conductivity of semiconductor material can
be varied over orders of magnitude by
changes in:-
-temperature
-optical excitation
-impurity content
Periodic table
Column IV Si, Ge Elemental semiconductors
III-V Compound semiconductors example: GaAs
II-VI Compound semiconductors example: CdTe
19
Semiconductor Materials
The Portion of Periodic Table Where
Semiconductors Occur
20
Semiconductor Materials
The Portion of Periodic Table Where
Semiconductors Occur
(b) Elemental IV Binary III-V Binary II-VI
Compounds Compounds Compounds
Si SiC Al P Zn S
Ge SIGe Al AS Zn Se
Al Sb Zn Te
Ga N Cd S
Ga P Cd Se
Ga As Cd Te
Ga Sb
In P
In As
In Sb
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Semiconductor Materials
Binary compounds: GaAs, GaP, GaN, CdTe, InP etc.
Ternary compounds: AlGaAs, GaAsP, HgCdTe, etc.
Quaternary compounds: InGaAsP, AlGaInAs, etc.
Applications:
* transistors, integrated circuits (Si)
* light emitting diodes (LEDs) (GaAs, GaN, GaP)
* lasers (AlGaInAs, InGaAsP, GaAs, AlGaAs)
* light detectors(Si, InGaAsP, CdSe, InSb, HgCdTe)
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Semiconductor Materials
• Energy Band Gap
Material Band –Gap Between Corresponding
C.B. &V.B. Wavelength
8688 Å
Ga As 1.43 eV
Near Infra-Red
5402 Å
Ga P 1.23 eV
In Green light range
Si 1.11 eV 11193 Å
Ge 0.67 eV 18543 Å
Si C 2.86 eV 4344 Å
Al P 2.45 eV 5071 Å
Al As 2.16 eV 5752 Å
Zn Se 2.7 eV 4601 Å
Ga N 3.4 eV 3654 Å
Zn S 3.6 eV 3358 Å
Semiconductor Materials
• Energy Band Gap
Material Band –Gap Between Corresponding
C.B. &V.B. Wavelength
In Sb 0.18 eV 69021 Å
Pb Se 0.27 eV 46014 Å
In As 0.36 eV 34511 Å
PB Te 0.29 eV 42841 Å
Cd Te 1.58 eV 7863 Å
Zn Te 2.25 eV 5522 Å
29
Atoms in a Crystal
The Unit Cell Concept
• The simplest repeating unit in a crystal is called a
unit cell.
• Opposite faces of a unit cell are parallel.
• The edge of the unit cell connects equivalent
points.
• Not unique. There can be several unit cells of a
crystal.
• The smallest possible unit cell is called primitive
cell of a particular crystal structure.
Unit Cell
Unit and Primitive Cells
• P = primitive (1
lattice point)
• I = Body-
centred (2
lattice pts)
• F = Face-
centred (4
lattice pts)
• C = Side-centred
(2 lattice pts)
Cubic Lattices
a – lattice constant