17EE317

POWER ELECTRONICS

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 1

 Syllabus
Power Devices : Power Diode, SCR, TRIAC, GTO , Power transistor, MOSFET and IGCT. Principles of operation, characteristics,
ratings, series and parallel operation, protection and gate drive circuits. Introduction to silicon carbide power devices.

Phase controlled rectifiers and DC Choppers: Single phase half wave and full converter, Single phase half controlled
rectifiers. Three phase half controlled rectifiers and full converter , Effect of source impedance on the performance of single phase
controlled rectifiers and Dual Converters. D.C. chopper circuits -Type-A, B, C, D and E configurations, Analysis of Type-A
chopper with R-L load. Voltage and current commutated Choppers.

Inverters Single phase and three phase inverters, constant voltage source and constant current source inverters, PWM inverters.
Introduction to Resonant Converters. Classification of Resonant Converters. Basic Resonant Circuit Concepts. Single phase
cycloconverter - single and three phase AC –AC voltage controller. Switched mode converters Buck, Boost, Buck-Boost SMPS
Topologies . Basic Operation- Waveforms - modes of operation.
Total Hours: 60
TEXT BOOKS
1. M.H. Rashid, “Power Electronics circuits, devices and applications”, Pearson Education, Inc. Edition 2014.
2. M.D. Singh and K.B. Khanchandani, “Power Electronics” Tata McGraw-Hill, Edition 2017.
3. Ned Mohan, Tore M. Undeland & William P. Robbins, “Power Electronics – Converters, Applications and Design”, John Wiley
& Sons edition 2011.
4. Vedam Subrahmanyam, “Power Electronics” John Wiley edition 2010.

REFERENCE BOOKS
1. P.S. Bhimbra, “Power Electronics”, Khanna Publishers edition 2017.
2. P.C. Sen, “Modern Power Electronics”, Tata McGraw-Hill, edition 2008.
3. Bimal K. Bose, “Modern Power Electronics & AC Drives”, Prentice Hall, edition 2013.

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 2

 MODULE I -POWER DEVICES

Power Diode, SCR, TRIAC, GTO ,

Power transistor, MOSFET and IGCT.
Principles of operation, characteristics, ratings,
series and parallel operation, protection and
gate drive circuits.
Introduction to silicon carbide power devices.

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 INTRODUCTION
• Power electronics started with the development of the mercury arc rectifier (Type of electrical
rectifier used for converting high-voltage or high-current alternating current (AC) into direct current
(DC)). Invented by Peter Cooper Hewitt in 1902, it was used to convert alternating current (AC) into
direct current (DC).

• Power electronic devices may be used as switches, or as amplifiers. An ideal switch is either open
or closed and so dissipates no power; it withstands an applied voltage and passes no current, or
passes any amount of current with no voltage drop.

• A power diode is a crystalline semiconductor device used mainly to convert alternating current (AC)
to direct current (DC), a process known as rectification. This makes power diodes better suited for
applications where larger currents and higher voltages are involved.

• Power transistor is a three terminal semiconductor device used to amplify and switch electronic
signals and electrical power. It is a junction transistor designed to handle high current and power;
used chiefly in audio and switching circuits.

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 4

• The power conversion systems can be
classified according to the type of the input
and output power
• AC to DC (rectifier)
• DC to AC (inverter)
• DC to DC (DC-to-DC converter)
• AC to AC (AC-to-AC converter)

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30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 6
 Energy Scenario of the world

87% of energy by combustion of fosil fuels

6% of energy from Nuclear power
7% of energy from renewable resources

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 Fosil Fuel Combustion

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 Effect of Combution of Fosil Fuel

SOx Acid rain

NOx
Combustion of fossil fuels Fly ashes

N2O Global warming

CO2

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 Need of Energy Conservation
Saving of one KW power results we can save
6 KW fosil fuel consumption.
Literature survey says that mount everst loses its
height 10cm daily because of global warming.

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 Why we need PE Components?

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 Outline
I. What is power electronics?

II. The history

III. Applications

IV. A simple example

V. About this course

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 I. What is power electronics?
1) Definition

2) Relation with information electronics

3) The interdisciplinary nature

4) Position and significance in the human

society

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 1) Definition
• Power Electronics:
is the electronics applied to conversion and control of
electric power.

Range of power scale :

milliwatts(mW) megawatts(MW) gigawatts(GW)

• A more exact explanation:

The primary task of power electronics is to process and
control the flow of electric energy by supplying voltages
and currents in a form that is optimally suited for user
loads.

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 Conversion of electric power
Electric Other names for
Power Power Power electric
input output
Converter power converter:
-Power converter
-Converter
Control -Switching converter
input -Power electronic circuit
-Power electronic converter

Two types of electric power Changeable properties in conversion

DC(Direct Current) Magnitude

Frequency, magnitude,
AC (Alternating Current)
number of phases

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 Classification of power converters
Power
output
Power DC AC
input
AC to AC converter
AC AC to DC converter ( Fixed frequency : AC controller
(Rectifier) Variable frequency: Cycloconverter
or frequency converter)

DC DC to DC converter DC to AC converter
(Chopper) (Inverter)

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 16

 Power electronic system
Generic structure of a power electronic system

Power Power Power

input output
Converter

Control input
Feedforward/Feedback Feedback/Feedforward
Controller
( measurements of input signals ) ( measurements of output signals )
Reference
(commanding)

Control is invariably required.

Power converter along with its controller including the
corresponding measurement and interface circuits, is
also called power electronic system.
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 Typical power sources and loads for a
power electronic system

Power input Power Power output

Source Load
Vi ii Converter io Vo

-Electric utility -Electric Motor

Feedback/
-battery -light
-other electric energy source Feed forward
-power converter -heating
Controller -power converter
Reference -other electric or
electronic equipment

• The task of power electronics has been

recently extended to also ensuring the
currents and power consumed by power
converters and loads to meet the
requirement of electric energy sources.
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 2) Relation with information electronics
• A Classification of electronics by processing object
Information electronics: to process information
Electronics
Power electronics: to process electric power

Other classifications of electronics

Vacuum electronics: using vacuum devices,
e.g, vacuum tubes devices
Electronics
Solid (Solid state) electronics: using solid state devices,
e.g, semiconductor devices

Physical electronics: physics,material,fabrication,

and manufacturing of electronic
Electronics
devices
Applied electronics: application of electronic
devices to various areas
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 3) The interdisciplinary nature
William E. Newell’s description
Electronics Power

Power
Electronics
Continuous,
discrete
Control

Power electronics is the interface between

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electronics andDr.V.Gomathy,
power.ASP/EEE, SKCET 20
 Relation with multiple disciplines

Systems & Signal

Control theory processing
Circuit
Simulation &
theory
computing

Electric Power
machines Electronics
electronics

Power Solid state

systems physics
Electromagnetics

• Power electronics is currently the most active

discipline in electric power engineering worldwide.
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 4) Position and significance in the human society

• Electric power is used in almost every aspect and

everywhere of modern human society.
• Electric power is the major form of energy source
used in modern human society.
• The objective of power electronics is exactly
about how to use electric power, and how to use
it effectively and efficiently, and how to improve
the quality and utilization of electric power.
• Power electronics and information electronics
make two poles of modern technology and
human society—— information electronics is the
brain,and power electronics is the muscle.
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 II. The history
Application of
fast-switching
Invention of fully-controlled
Thyristor semiconductor
devices GTO
GTR IGBT
Mercury arc rectifier Power diode Power MOSFET Power MOSFET
Vacuum-tube rectifier Thyristor Thyristor Thyristor
Thyratron (microprocessor) (DSP)
1900 1957 mid 1970s late 1980s

Pre-history 1st phase 2nd phase 3rd phase

• The thread of the power electronics history precisely follows and

matches the break-through and evolution of power electronic devices

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 III. Applications
• Industrial
• Transportation
• Utility systems
• Power supplies for all kinds of electronic equipment
• Residential and home appliances
• Space technology
• Other applications

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 24

 Industrial applications
• Motor drives
• Electrolysis
• Electroplating
• Induction heating
• Welding
• Arc furnaces and ovens
• Lighting

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 25

 Transportation applications
• Trains & locomotives
• Subways
• Trolley buses
• Magnetic levitation
• Electric vehicles
• Automotive electronics
• Ship power systems
• Aircraft power systems

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 Utility systems applications
• High-voltage dc
transmission(HVDC)
• Flexible ac transmission(FACTS)
• Static var compensation &
harmonics suppression: TCR, TSC,
SVG, APF
• Custom power & power quality
control
• Supplemental energy sources :
wind, photovoltaic, fuel cells
• Energy storage systems

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 Power supplies for electronic equipment
• Telecommunications

• Computers

computer
• Office equipment server

• Electronic
instruments

• Portable or mobile
electronics
Telecommunication
30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 28
 Residential and home appliances

• Lighting
• Heating
• Air conditioning
• Refrigeration & freezers
• Cooking
• Cleaning
• Entertaining

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 Applications in space technology
• Spaceship power
systems

• Satellite power
systems

• Space vehicle power

systems

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 Other applications
• Nuclear reactor
control

• Power systems for

particle accelerators

• Environmental
engineering

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 Trends
• It is estimated that in developed countries now 60% of
the electric energy goes through some kind of power
electronics converters before it is finally used.

Power electronics has been making major

contributions to:
--better performance of power supplies and better control of
electric equipment
--energy saving
--environment protection
reduction of energy consumption leads to less pollution
reduction of pollution produced by power converters
direct applications to environment protection technology

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 32

 Power electronics basic concepts
• Energy storage
• When analyzing the circuit, the state of each energy storage element
contributes to the overall system’s state. Hence, there is one state variable
associated to each energy storage element.

• In an electric circuit, energy is stored in two fields:

• Electric fields (created by charges or variable magnetic fields and related
with a voltage difference between two points in the space)
• Magnetic fields (created by magnetic dipoles or electric currents)

• Energy storage elements:

• Capacitors: Inductors:

L
C

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 33

 Power electronics basic concepts
•Capacitors:
• state variable: voltage
• Fundamental circuit equation:
dvC
iC  C
dt
• The capacitance gives an indication of electric inertia. Compare the above
equation with Newton’s
dv
F m
dt
• Capacitors will tend to hold its voltage fixed.
• For a finite current with an infinite capacitance, the voltage must be
constant. Hence, capacitors tend to behave like voltage sources (the larger
the capacitance, the closer they resemble a voltage source)
• A capacitor’s energy is
1
WC  Cv 2
2
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 Power electronics basic concepts
• Inductors
• state variable: current
• Fundamental circuit equation:
diL
vL  L
dt
• The inductance gives an indication of electric inertia. Inductors will tend to
hold its current fixed.
• Any attempt to change the current in an inductor will be answered with an
opposing voltage by the inductor. If the current tends to drop, the voltage
generated will tend to act as an electromotive force. If the current tends to
increase, the voltage across the inductor will drop, like a resistance.
• For a finite voltage with an infinite inductance, the current must be
constant. Hence, inductors tend to behave like current sources (the larger the
inductance, the closer they resemble a current source)
• An inductor’s energy is
1 2
WL  Li
2
30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 35
 Power electronics basics
• Harmonics
• Concept: periodic functions can be represented by combining sinusoidal
functions 
f (t )  c0   cn cos(nt   n )
n1

• Underlying assumption: the system is linear (superposition principle is

valid.)
• e.g. square-wave generation.

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 Power electronics basics
• Additional definitions related with Fourier analysis

f (t )  a0   (an cos(nt )  bn sin(nt ))
n 1

1  T
a0   f (t )dt
T 
2  T
an   f (t )cos(nt )dt
T 
2  T
bn   f (t )sin(nt )dt
T 
 bn 
a0  c0 (dc components) cn  a  b
2 2  n   tan  
1
n n
 an 
 Power electronics basics
• Types of interfaces:
• dc-dc: dc-dc converter
• ac-dc: rectifier
• dc-ac: inverter
• ac-ac: cycloconverter (used less often)

• Power electronic converters components:

• Semiconductor switches:
• Diodes
• MOSFETs
• IGBTs
• SCRs
• Energy storage elements
• Inductors
• Capacitors
• Other components:
• Transformer
• Control circuit
30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 38
 The concept of power electronic devices
• Power electronic devices:
are the electronic devices that can be directly used in the power
processing circuits to convert or control electric power.

• In broad sense Vacuum devices: Mercury arc

rectifier thyratron, etc. .
seldom in use today
power electronic devices
Semiconductor devices:
major power electronic devices
• Very often: since late 1950s

Power electronic devices = Power semiconductor devices

• Major material used in power semiconductor devices
—— Silicon
30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 39
 Features of power electronic devices
• The electric power that power electronic device deals with is usually
much larger than that the information electronic device does.
• Usually working in switching states to reduce power losses
On-state Voltage across the device is 0 p=vi=0
v=0

+ v -
i

Off-state Current through the device is 0 p=vi=0

i=0
+ v -

i
 Features of power electronic devices
• Need to be controlled by information electronic
circuits.
Very often, drive circuits are necessary to interface
between information circuits and power circuits.

• Dissipated power loss usually larger than information

electronic devices — special packaging and heat sink
are necessary.

30-07-2019 Dr.V.Gomathy, ASP/EEE, SKCET 41

 Power losses on power semiconductor devices
v
t

p
On-state turning- Off-state turning
(conduction state) off (blocking state) -on t

(usually very small

and can be neglected)
Total power loss on
= conduction loss + turn-off loss + off-state loss + turn-on loss
a power semiconductor
device (on-state loss)

Switching loss
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 Configuration of systems using power electronic
devices
Power electronic system:
Electric isolation:
optical or magnetic
Control circuit (in a broad sense)

Detection
Control circuit

(measurement)
circuit
Power circuit
(power stage,
main circuit)
drive
circuit

Protection circuit is also very often used in power electronic system

especially for the expensive power semiconductors.

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 Terminals of a power electronic device
A power electronic
device usually has A power electronic device
a third terminal — must have at least two
C terminals allowing power
—control terminal
to control the circuit current flow through.
states of the device.

Drive
Circuit
E

The control signal from drive circuit must be connected between the
control terminal and a fixed power circuit terminal (therefore called common
terminal ).
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 A classification of power electronic devices
Uncontrolled device: diode
(Uncontrollable device)
has only two terminals and can not be controlled by control signal.
The on and off states of the device are determined by the power
circuit.

Half-controlled device: thyristor

(Half-controllable device)
is turned-on by a control signal and turned-off by the power circuit

Fully-controlled device: Power MOSFET, IGBT,GTO, IGCT (Fully-

controllable device)
The on and off states of the device are controlled by control signals.

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 Other classifications
Current-driven (current-controlled) devices
power electronic devices
Voltage-driven (voltage-controlled) devices
(Field-controlled devices)

Pulse-triggered devices
power electronic devices
Level-sensitive (level-triggered) devices

Unipolar devices (Majority carrier devices)

power electronic devices Bipolar devices (Minority carrier devices)

Composite devices

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 Major topics for each device

• Appearance, structure, and symbol

• Physics of operation
Static characteristics

Switching characteristics
• Characteristics (Dynamic characteristics)

• Specification
• Special issues
• Devices of the same family

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 Passive components in power electronic circuit

• Transformer, inductor, capacitor and resistor

These are called passive components in a
power electronic circuit since they can not be
controlled by control signal and their
characteristics are usually constant and linear.

• The requirements for these passive components

by power electronic circuits could be very
different from those by ordinary circuits.

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 DEFINITION
• Power electronics involves the study of
electronic circuits intended to control the flow
of electrical energy. These circuits handle
power flow at levels much higher than the
individual device ratings.
 WHY POWER ELECTRONICS IS IMPORTANT?

• ELECTRICAL ENERGY PROCESSING AT HIGH EFFICIENCY

• APPARATUS AT LOW COST, HIGH RELIABILITY
• HIGH VOLUME DENSITY AND LONG LIFE
• FAST GROWTH IN GLOBAL ENERGY CONSUMPTION
• INCREASING EMPHASIS OF ENERGY SAVING BY POWER
ELECTRONICS
General system for electric power conversion.
A basic power electronic system.
 Types of power electronic circuits

• Diode rectifiers (un controlled rectifiers)

• Ac-dc converters (controlled rectifiers)
• Dc-dc converters (dc choppers)
• Dc-ac converters (inverters)
• Ac-ac converters (ac voltage controllers)
• Static switches
SEMICONDUCTOR DEVICES USED IN POWER ELECTRONICS

Diode

BJT

FET

2 to 50 A
200 to 800 V
Bipolar junction transistor(BJT)

Circuit symbols: (a) npn transistor and (b) pnp

transistor
Metal- Oxide- semiconductor Field
Effect Transistor

Power MOSFET
Insulated Gate Bipolar Transistor (IGBT)
 Advantages of Power Electronic Converters
• High efficiency due to low loss in power-semiconductor
devices
• High reliability of power-electronic converter system
• Long life and less maintenance due to absence of moving
parts
• Fast dynamic response compared to electromechanical
converter systems
• Small size and less weight result in less floor space and
therefore lower installation cost
• Production is high in Power-semiconductor devices and has
low cost in converter equipment.
 Disadvantages of Power Electronic Converters
• These converter circuits have tendency to
generate harmonics in the supply system as well
as in the load circuits
• The harmonics in the supply line can also cause
interference with communication lines it is
necessary to insert filters on the input side of a
converter
• These controllers have low overload capacity due
to that cost of controllers may increase
• Regeneration of power is difficult in this
converter.
 APPLICATIONS OF POWER ELECTRONICS

• HIGH VOLTAGE DC SYSTEM

• SWITCHED MODE POWER SUPPLY (SMPS)
• UNINTERRUPTIBLE POWER SUPPLIES
• STATIC SWITCHES
• STATIC CIRCUIT BREAKERS
• RESONANT CONVERTERS
 POWER DIODE
• Power Diode is the two terminal(namely anode and
cathode) two layer(P-N) device which is used in most of
the power electronics circuits.
• Power diodes provide uncontrolled rectification of power
and are used in applications such as electroplating,
anodizing, battery charging, welding, power supplies (dc and
ac), and variable frequency drives. They are also used in
feedback and the freewheeling functions of converters and
snubbers.
Structure of Power Diode
Diode symbol and volt-ampere
characteristics
 Switching (dynamic) characteristics
of power diode
Turn-off transient

IF diF
dt trr
UF td tf

tF t0 t1 t2 t
UR
diR
dt
IRP
URP

• Reverse-recovery process:
a)
Reverse-recovery time, reverse-recovery charge, reverse-
recovery peak current.
 Switching (dynamic) characteristics
of power diode
Turn-on transient
u
i
iF
UFP

uF
2V

0 tfr t

• Forward recovery process:

b)
forward-recovery time
 Specifications of power diode

• Average rectified forward current I F(AV)

• Forward voltage U F

• Peak repetitive reverse voltage URRM

• Maximum junction temperature T JM

• Reverse-recovery time t rr
 Types of power diodes
• General purpose diode (rectifier diode):
standard recovery

• Fast recovery diode

Reverse recovery time and charge specified. trr is usually less
than 1μs, for many less than 100 ns —— ultra-fast recovery
diode.

• Schottky diode (Schottky barrier diode-SBD)

– A majority carrier device
– Essentially no recovered charge, and lower forward voltage.
– Restricted to low reverse voltage and blocking capability
(less than 200V)
 Thyristors

• Most important type of power semiconductor

device.
• Have the highest power handling
capability.they have a rating of 5000V / 6000A
with switching frequencies ranging from 1KHz
to 20KHz.

68
 SCR

Symbol of
Silicon Controlled Rectifier

69
 Thyristors

• Is inherently a slow switching device

compared to BJT or MOSFET.
• Used as a latching switch that can be turned
on by the control terminal but cannot be
turned off by the gate.

70
 Equivalent circuit of thyristor
• Structure • Equivalent circuit
 Structure
Gate Cathode

+
n
19
10
-3
cm
+
n
19
10 cm
-3
 10m


J3 - 17 -3
p 10 cm 30-100m


J2
–
n
13
10 -5 x 10
14
cm
-3 50-1000m

J1
p
+
17
10 cm
-3
 30-50m
19 -3
p 10 cm

Anode

72
Device Operation

Simplified model of a
thyristor

73
V-I Characteristics
74
Effects of gate current

75
Two Transistor Model of SCR

76
77
Considering PNP transistor
of the equivalent circuit,
I E 1  I A , I C  I C1 ,  1 ,
I CBO  I CBO1 , I B  I B1
 I B1  I A 1  1   I CBO1    1
78
Considering NPN transistor
of the equivalent circuit,
I C  I C2 , I B  I B2 , I E2  I K  I A  I G
I C2   2 I k  I CBO2
I C2   2  I A  I G   I CBO2     2 
79
From the equivalent circuit,
we see that
 I C2  I B1
 2 I g  I CBO1  I CBO 2
 IA 
1  1   2 
80
Case 1: When I g  0
I CBO1  I CBO2
IA 
1  1   2 
Case 2: When IG  0
 2 I g  I CBO1  ICBO 2
IA 
1  1   2 
81
 Turn-on
Characteristics

ton  td  tr
82
 VAK
tC
tq

IA
di
Commutation
Anode current dt
begins to
decrease Recovery Recombination

t1 t2 t3 t4 t5

tq=device

tc=circuit
off time
off time
trr tgr Turn-off
tq
tc Characteristics
83
 Thyristor Types
• SITH = Static Induction Thyristor
• GTO = Gate Turn Off Thyristor
• MOS = Metal Oxide Semiconductor
• MCT = MOS Controlled Thyristor
• MTO = MOS Turn Off Thyristor
• ETO = Emitter Turn Off Thyristor
• IGCT = Insulated Gate Controlled Thyristor
• TRIAC = Triode Thyristor
• LASCR = Light Activated SCR
Bidirectional Triode
Thyristors (TRIAC)

85
Triac Characteristics

86
 Advantages of the TRIAC:
• The TRIAC has the following advantages:

(i) They can be triggered with positive- or negative-polarity voltage.

(ii) They need a single heat sink of slightly larger size.
(iii) They need a single fuse for protection, which simplifies their construction.
(iv) In some dc applications, the SCR has to be connected with a parallel diode for
protection against reverse voltage, whereas a TRIAC may work without a diode, as
safe breakdown in either direction is possible.
 Disadvantages of the TRIAC:
• The TRIAC has the following disadvantages:

(i) TRIACs have low dv/dt ratings compared to SCRs.

(ii) Since TRIACs can be triggered in either direction, the trigger circuits with
TRIACs needs careful consideration.
(iii) Reliability of TRIACs is less than that of SCRs.
Simple Applications of the TRIAC:
• The TRIAC as a bidirectional thyristor has various
applications. Some of the popular applications of the
TRIAC are as follows:

(i) In speed control of single-phase ac series or universal motors.

(ii) In food mixers and portable drills.
(iii) In lamp dimming and heating control.
(iv) In zero-voltage switched ac relay.
 GTO Turn-Off

• Need a turn-off snubber

 Advantages over SCRs
• Elimination of commutating components.
• Reduction in acoustic & electromagnetic noise
due to elimination of chokes.
• Faster turn-off, therefore can be used for
higher switching frequencies.
• Improved efficiency of converters.

91
 Advantages over BJTs
• Higher voltage blocking capabilities.
• High on-state gain.
• High ratio of peak surge current to average
current.
• A pulsed gate signal of short duration only is
required.

92
 Disadvantages of GTOs
• On-state voltage drop is more.
• Due to multi cathode structure higher gate
current is required.
• Gate drive circuit losses are more.
• Reverse blocking capability is less than its
forward blocking capability.

93
 MOSFETs

• Easy to control by the gate

• Optimal for low-voltage operation at high switching frequencies
• On-state resistance a concern at higher voltage ratings
 Circuit Symbol (NMOS)
enhancement-type: no channel at zero gate voltage

D
ID = I S

G B (IB=0, should be reverse biased)

IG= 0

IS G-Gate
D-Drain
S-Source
S B-Substrate or Body
 Power MOSFETs

• Two Types
– Depletion Type
• Channel region is already diffused between the Drain
and Source
• Deplete, or “pinch-off” the Channel
– Enhancement Type
• No channel region exists between the Drain and Source
• “Invert” the region between the Drain and Source to
induce a channel

ECD 442 Power Electronics 100

Depletion MOSFET

ECD 442 Power Electronics 101

Enhancement MOSFET

ECD 442 Power Electronics 102

Switching Waveforms and Times

ECD 442 Power Electronics 103

 Structure and operation principle of IGBT

Basic structure Multiple cell structure

Emitter Gate Basic structure similar to
E G power MOSFET, except extra p
region
N+ N+ N+ N+ On-state: minority carriers are
P P
J3 J2 N- Drift region injected into drift region,
N+ Buffer layer leading to conductivity
J1 P+ Injecting layer modulation
compared with power
C Collector MOSFET: slower switching
a) times, lower on-resistance
useful at higher voltages (up
to 4500V)
Switching Characteristics of IGBT
 Advantages of IGBT
• Combines the advantages of BJT & MOSFET
• High input impedance like MOSFET
• Voltage controlled device like MOSFET
• Simple gate drive, Lower switching loss
• Low on state conduction power loss like BJT
• Higher current capability & higher switching speed
than a BJT. ( Switching speed lower than MOSFET)

111
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
 Applications of IGBT
• ac and dc motor controls.
• General purpose inverters.
• Uninterrupted Power Supply (UPS).
• Welding Equipments.
• Numerical control, Cutting tools.
• Robotics & Induction heating.

112
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Difference between BJT and MOSFET

1. BJT Bipolar device

2. MOSFET is unipolar (Majority carrier device)
3. BJT Current controlled device
4. MOSFET Voltage control device
5. BJT Driver circuit is complex, it should provide constant current.
(base current)
6. MOSFET Driver circuit is simple, it should provide constant voltage
(gate voltage)
7. BJT Losses are low, so used in high power applications.
8. MOSFET Losses are higher than BJT, so used in low power
applications.
9. BJT have high voltage & current ratings.
10. MOSFET have less voltage & current ratings.
11. MOSFET Switching time is less loss associated with it also less, so it
is used in high frequency applications.
12. BJT is used for low operating frequencies.
Difference between IGBT and MOSFET

1. Although both IGBT and MOSFET are voltage controlled

devices, IGBT has a BJT like conduction characteristics.
2. Terminals of IGBT are known as emitter, collector, and gate,
whereas MOSFET is made of gate, source, and drain.
3. IGBTs are better in power handling than MOSFETS
4. IGBT has PN junctions, and MOSFETs doesn’t have them.
5. IGBT has a lower forward voltage drop compared to MOSFET
6. MOSFET has a long history compared to IGBT
 WHY PROTECTION OF SCR
NEEDED?
 SCR is a very delicate semiconductor device. So we
have to use it in its specified ratings to get desired
output.

 SCR may face different types of threats during its

operation due to over voltages, over currents etc.

 There are different types of thyristor protection

schemes available for satisfactory operation in market.

 Under Power Electronics Protection of a device is an

important aspect for its reliable and efficient
operation.
 TYPE OF PROTECTION FOR SCR
Overvoltage protection.
Over current protection.
 High di/dt protection.
 High dv/dt protection.
Thermal protection.
 OVERVOLTAGE PROTECTION
 A thyristor may be subjected to internal or external over-
voltages.
 Internal Over-Voltages : After commutation of a thyristor
reverse recovery current decays abruptly with high di/dt
which causes a high reverse voltage [as, V = L(di/dt) so if di/dt
is high then V will be large] that can exceed the rated break-
over voltage and the device may be damaged.
 External Over-Voltages : These are caused due to various
reasons in the supply line like lightning, surge conditions
(abnormal voltage spike) etc. External over voltage may cause
different types of problem in thyristor operation like increase
in leakage current, permanent breakdown of junctions,
unwanted turn-on of devices etc. So, we have to suppress the
over-voltages.
Voltage Clamping Device:
 It is a non-linear resistor called as VARISTOR (VARIable
resiSTOR) connected across the SCR.

 The resistance of varistor will decrease with increase in

voltage.

 During normal operation, varistor has high Resistance

and draws only small leakage current.

 When high voltage appears, it operates in low resistance

region and the surge energy is dissipated across the
resistance by producing a virtual short-circuit across the
SCR.
SCR Over Voltage Protection
 OVERCURRENT PROTECTION
 In an SCR due to over-current, the junction temperature
exceeds the rated value and the device gets damaged.
 Over-current is interrupted by conventional fuses and
circuit breakers.
 The fault current must be interrupted before the SCR
gets damaged and only the faulty branches of the
network should be isolated.
 Circuit breaker has long tripping time. So it is used for
protecting SCR against continuous over loads (or) against
surge currents of long duration.ast acting current limiting
fuse is used to protect SCR against large surge currents of
very short duration.
SCR Over Current Protection
 HIGH di/dt PROTECTION
 When a thyristor is forward biased and is turned on by a
gate pulse, conduction of anode current begins in the
immediate neighbourhood of the gate-cathode junction.
 Thereafter, the current spreads across the whole area of
junction.
 The thyristor design permits the spread of conduction to
the whole junction area as rapidly as possible.
 However, if the rate of rise of anode current, i.e. di/dt, is
large as compared to the spread velocity of carriers, local
hot spots will be formed near the gate connection on
account of high current density.
 applying a gate current nearer to (but never greater)This
localized heating may destroy the thyristor. Therefore,
the rate of rise of anode current at the time of turn-on
must be kept below the specified limiting value.
 The value of di/dt can be maintained below acceptable
limit by using a small inductor, called di/dt inductor, in
series with the anode circuit. Typical di/dt limit values of
SCRs are 20-500 A/µ sec.
 Local spot heating can also be avoided by ensuring that
the conduction spreads to the whole area as rapidly as
possible.
 This can be achieved by than the maximum specified
gate current. A thyristor requires a minimum time to
spread the current conduction uniformly throughout the
junctions
 Otherwise, a localized “hot-spot” heating may occur due
to high current density.
 High dv/dt protection
Protection against high rate of change of voltage i.e.
dV/dt also needed for satisfactory operation of SCR.
Effect of High Voltage Rise Rate
Protection against high rate of voltage rise is
necessary because if SCR is not in conduction mode
and is forward biased mode then high dV/dt may
trigger the SCR, and SCR will not be able to serve it
purpose.
Protection Method
 As we all know capacitor is a good charge storing
option and provide less resistance for high
frequency voltage so a capacitor may be connected
in parallel to the SCR to protect it from high rate of
change of voltage i.e. dV/dt.
 These were the methods of protection of SCR
against high di/dt and high dV/dt.
 Typical values of dv/dt are 20 – 500 V/µsec. False
turn-on of a thyristor by large dv/dt can be
prevented by using a snubber circuit in parallel with
the device.
 Snubber circuit
 A snubber circuit consists of a series combination of
resistance Rs and capacitance Cs in parallel with the
thyristor as shown in Fig.
 Strictly speaking, a capacitor Cs in parallel with the
device is sufficient to prevent unwanted dv/dt triggering
of the SCR.
 When switch S is closed, a sudden voltage appears across
the circuit. Capacitor Cs behaves like a short circuit,
therefore voltage across SCR is zero.
 With the passage of time, voltage across Cs builds up at a
slow rate such that dv/dt across Cs and therefore across
SCR is less than the specified maximum dv/dt rating of
the device.
 Here the question arises that if Cs is enough to prevent
accidental turn-on of the device by dv/dt, what is the
need of putting Rs in series with Cs ? The answer to this
is as under.
 applying a gate current nearer to (but never greater)This
localized heating may destroy the thyristor. Therefore, the
rate of rise of anode current at the time of turn-on must
be kept below the specified limiting value.
 The value of di/dt can be maintained below acceptable limit
by using a small inductor, called di/dt inductor, in series with
the anode circuit. Typical di/dt limit values of SCRs are 20-
500 A/µ sec.
 Local spot heating can also be avoided by ensuring that the
conduction spreads to the whole area as rapidly as
possible.
 This can be achieved by than) the maximum specified gate
current.
 Before SCR is fired by gate pulse, Cs charges to full voltage Vs.
When the SCR is turned on, capacitor discharges through the SCR
and sends a current equal to Vs / (resistance of local path formed
by Cs and SCR).

 As this resistance is quite low, the turn-on di/dt will tend to be

excessive and as a result, SCR may be destroyed. In order to limit
the magnitude of discharge current, a resistance Rs is inserted in
series with Cs as shown in Fig.

 Now when SCR is turned on, initial discharge current Vs/Rs is

relatively small and turn-on di/dt is reduced.
Unijunction Transistor Symbol and Construction
 Unijunction Transistor Applications

Now that we know how a unijunction transistor works, what can they be
used for. The most common application of a unijunction transistor is as a
triggering device for SCR’s and Triacs but other UJT applications include
saw-toothed generators, simple oscillators, phase control, and timing
circuits. The simplest of all UJT circuits is the Relaxation Oscillator producing
non-sinusoidal waveforms. In a basic and typical UJT relaxation oscillator
circuit, the Emitter terminal of the unijunction transistor is connected to
the junction of a series connected resistor and capacitor, RC circuit as
shown below.
 Unijunction Transistor Relaxation Oscillator

When a voltage (Vs) is firstly applied, the unijunction transistor is “OFF” and the capacitor C1 is fully
discharged but begins to charge up exponentially through resistor R3. As the Emitter of the UJT is connected
to the capacitor, when the charging voltage Vc across the capacitor becomes greater than the diode volt
drop value, the p-n junction behaves as a normal diode and becomes forward biased triggering the UJT into
conduction. The unijunction transistor is “ON”. At this point the Emitter to B1 impedance collapses as the
Emitter goes into a low impedance saturated state with the flow of Emitter current through R1 taking place.
As the ohmic value of resistor R1 is very low, the capacitor discharges rapidly through the UJT and a fast
rising voltage pulse appears across R1. Also, because the capacitor discharges more quickly through the UJT
than it does charging up through resistor R3, the discharging time is a lot less than the charging time as the
capacitor discharges through the low resistance UJT. When the voltage across the capacitor decreases below
the holding point of the p-n junction ( VOFF ), the UJT turns “OFF” and no current flows into the Emitter
junction so once again the capacitor charges up through resistor R3 and this charging and discharging
process between VON and VOFF is constantly repeated while there is a supply voltage, Vs applied.
 Chapter Three
Series and Parallel operation of SCRs

In high voltage and high current applications, Power diodes have

to be connected in series and parallel.

Similarly, for high voltage and high current applications, SCRs

also have to be connected in series and parallel.
 Series and Parallel Connection of SCR or Thyristor

Nowadays, SCRs are available of ratings up to 10 KV and 3 KA. But

sometimes we face demand, more than these ratings. In this case
combination of more than one SCRs is used.
Series connection of SCRs meets high voltage demand and parallel
connection of SCRsmeets high current demand. These series and
parallel connection of SCR or Thyristor will work efficiently if all SCRs
are fully utilized. Although all SCRs in a string are of same rating, their
V-I characteristics differ from one another. This leads to unequal
voltage or current division among them. Hence every SCR is not fully
utilized. So the efficiency of string is always less than 100% according
to the given expression.
 Chapter Three
Series operation of SCRs
If the input voltage is higher than the voltage rating of the
available SCR, two or more SCRs must be connected in series.
 Chapter Three
Series operation of SCRs
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