Professional Documents
Culture Documents
Crystal Growth - Wafer Preparation
Crystal Growth - Wafer Preparation
Crystal Growth - Wafer Preparation
• Crystal Growth
• Wafer Preparation
1
Process Flow Overview
Si GaAs
Starting Material SiO 2 Ga,As
Distillation
and Synthesis
Reduction
Polycrystalline
semiconductor
Single crystal
Wafer
2
Overview
• Material preparation is the beginning of the
process in making an IC chip .
• The goal for this part of the process is to
grow the ingot that will be sliced up into
wafers.
• The wafer is a round solid silicon disc that
will have all of the processing performed
on it.
3
CRYSTAL GROWTH
Polysilicon Seed crystal
6. Edge Rounding
Crucible
1. Crystal Growth
Heater
7. Lapping
8. Wafer Etching
9. Polishing
4. Flat Grinding Polishing table
4
Starting Material Preparation
• The starting material for silicon is relatively
pure form of sand (SiO2) called quartzite.
• This is placed in a furnace with various
forms of Carbon.
5
Starting Material Preparation
• Fractional Distillation of the liquid removes the unwanted
impurities. The purified SiHCL3 is then used in a
hydrogen reduction reaction to prepare the electronic-
grade silicon ( EGS) .
6
Silicon Crystal Growth from the Melt
7
Czochralski Technique
• Czochralski Process is
a Technique in Making
Single-Crystal Silicon
• A Solid Seed Crystal is
Rotated and Slowly
Extracted from a Pool
of Molten Si
• Requires Careful
Control to Give
Crystals Desired Purity
and Dimensions 8
CYLINDER OF
MONOCRYSTALLINE
• The Silicon Cylinder is
Known as an Ingot
• Typical Ingot is About 1 or
2 Meters in Length
• Can be Sliced into
Hundreds of Smaller
Circular Pieces Called
Wafers
• Each Wafer Yields
Hundreds or Thousands of
Integrated Circuits
9
Czochralski Technique
Graphite susceptor
Sio2 crucible
Heating element
Crystal Furnace
Power supply
Puller
Rotation mechanism
Seed Holder
Crystal-pulling
mechanism
Rotation mechanism
Gas Source
Ambient
control Flow control
Exhaust system
Control
Control process parameters: Crystal
system Diameter, pull rate and rotation speed.
10
Distribution of Dopant
• In crystal-growth a known amount of Dopant is added to the melt to
obtain the desired doping concentration in the growth crystal.
• At interface, The doping concentration incorporated into the crystal
( solid) is usually different from the doping concentration of the
melt ( liquid).
11
Distribution of Dopant
12
Distribution of Dopant
• Find the doping concentration in the
crystal in CZ technique?
The doping concentration in the crystal
Cs
M0 The initial doping concentration in the crystal
14
K 01
K0 1
K 01
K 0 C0
15
Example
16
Effective Segregation Coefficient
17
Effective Segregation Coefficient
Cs Cs
K0 Ke
C 10 C1
18
Silicon Float-Zone Process
Gas inlet (inert)
Chuck
Polycryst
Molten zone
alline rod
(silicon)
RF Trav
eling
RF
coil
Seed crystal
Chuck
Inert gas out
19
Silicon Float-Zone Process
20
Silicon Float-Zone Process
21
Silicon Float-Zone Process
22
Silicon Float-Zone Process
23
Neutron Irradiation
24
GaAs Advantages
Saturated
Substrate Electron Cutoff Operating Breakdown Fabrication
electron Noise
Type mobility Frequency Power voltage Cost
velocity
These properties make GaAs circuitry ideal for mobile phones, satellite
communications, microwave point-to-point links, and radar systems.
However, high fabrication costs and high power consumption have made
GaAs circuits unable to compete with silicon CMOS circuits in most
applications.
25
Native Gallium
Ga & As Elemental Gallium
With 99.9999% purity
Bayer Process
Native Arsenic
Elemental Arsenic
With 99.9999% purity
26
GaAs Polycrystalline
Elemental Gallium
With 99.9999% purity
Synthesis Process
Elemental Gallium
With 99.9999% purity
27
GaAs Crystal-growth
• The starting materials for the synthesis of
polycrystalline gallium arsenide are the
elemental , chemically pure gallium and
arsenic.
29
Example
• Find the fraction of melt that will be
solidified?
Ta Cm Weight percent scale
30
Example ( cont.)
Ml Cl Ms Cs ( Ml Ms ) * Cm
31
GaAs Crystal-growth
32
Bridgman Technique
33
Equilibrium Segregation Coefficient
34
Wafer Coding
35
Packed Wafers
36
Chapter Overview
• Raw materials (SiO2) are refined to produce electronic grade
silicon with a purity unmatched by any other available material
on earth.
• CZ crystal growth produces structurally perfect Si single
crystals which are cut into wafers and polished.
• Dopants can be incorporated during crystal growth
• Point, line, and volume (1D, 2D, and 3D) defects can be present
in crystals, particularly after high temperature processing.
• Point defects are "fundamental" and their concentration
depends on temperature (exponentially), on doping level and
on other processes like ion implantation which can create non-
equilibrium transient concentrations of these defects.
37