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Electronics Ii: BY Professor Omotosho T. Victor & DR Akinwumi Sayo
Electronics Ii: BY Professor Omotosho T. Victor & DR Akinwumi Sayo
Electronics Ii: BY Professor Omotosho T. Victor & DR Akinwumi Sayo
ELECTRONICS II
BY
Professor Omotosho T. Victor & Dr Akinwumi Sayo
JUNCTION FIELD EFFECT TRANSISTOR
- the value of the drain to source voltage of a FET at which the drain
current becomes constant when the gate – to – source voltage is zero.
3. Depletion region
- the area near a p-n junction on both sides that has no majority carriers.
JUNCTION FIELD EFFECT TRANSISTOR
4. Source
- one of the three terminals of a FET analogous to the emitter of a BJT.
5. Gate
- one of the three terminals of a FET analogous to the base of a BJT.
6. Drain
- one of the three terminals of a FET analogous to the collector of a BJT.
7. Channel
- the conductive path between the source and the drain.
JUNCTION FIELD EFFECT TRANSISTOR
N – channel JFET Construction
If VGS and VDS are both zero volts the transistor is not
conducting. ( off )
ID = no change
ID
When the Gate voltage is made more
negative ( - ) suppose 0V to -1V drain current
ID goes down ( ↓ ) for a given value of
Source-to -Drain voltage (VDS).
1V
Circuit of
one pixel
APPLICATION S:
The gate has a voltage applied to it that makes it positive with respect to the
source.
JUNCTION FIELD EFFECT TRANSISTOR
Depletion mode MOSFET
Reducing The Conduction Channel
The depletion mode MOSFET shown as a N channel device (P channel
is also available) in fig below is more usually made as a discrete
component, i.e. a single transistor rather than IC form.
It achieves extremely high input impedance, in the range 109 to 1014 ohms.
• The following points may be noted :
(i) The input circuit (i.e. gate to source) of a JFET is reverse biased. This
means that the device has high input impedance.
(ii) The drain is so biased w.r.t. source that drain current ID flows from the
source to drain.
(iii) In all JFETs, source current IS is equal to the drain current i.e. IS = ID.
• The vertical line in the symbol may be thought as channel and source
(S) and drain (D) connected to this line. If the channel is n-type, the
arrow on the gate points towards the channel as shown in (i).
However, for p-type channel, the arrow on the gate points from
channel to gate.
Difference Between JFET and Bipolar Transistor
• The JFET differs from an ordinary or bipolar transistor in the following ways :
(i) In a JFET, there is only one type of carrier, holes in p-type channel and
electrons in n-type channel. For this reason, it is also called a unipolar
transistor.
However, in an ordinary transistor, both holes and electrons play part in
conduction. Therefore, an ordinary transistor is sometimes called a
bipolar transistor.
• (ii) As the input circuit (i.e., gate to source) of a JFET is reverse biased,
therefore, the device has high input impedance.
However, the input circuit of an ordinary transistor is forward biased
and hence has low input impedance.
• (iii) The primary functional difference between the JFET and the BJT is
that no current (actually, a very, very small current) enters the gate of
JFET (i.e. IG = 0A). However, typical BJT base current might be a few μA
while JFET gate current a thousand times smaller.
(iv) A bipolar transistor uses a current into its base to control a large
current between collector and emitter whereas a JFET uses voltage on
the ‘gate’ ( = base) terminal to control the current between drain (=
collector) and source ( = emitter).
Thus a bipolar transistor gain is characterised by current gain whereas the
JFET gain is characterised as a transconductance i.e., the ratio of change
in output current (drain current) to the input (gate) voltage.
(v) In JFET, there are no junctions as in an ordinary transistor. The
conduction is through an n- type or p-type semi-conductor material. For
this reason, noise level in JFET is very small.
Salient Features of JFET
Advantages of JFET
Expression for Drain Current (ID)
• The transfer characteristic of JFET shown in Figure below is part of a
parabola. A rather complex mathematical analysis yields the following
expression for drain current :
EXAMPLE 1
• Figure below shows the transfer characteristic curve of a
JFET. Write the equation for drain current.
SOLUTION
EXAMPLE 2
• A JFET has the following parameters: IDSS = 32 mA ; VGS (off) = – 8V ;
VGS = – 4.5 V. Find the value of drain current.
CLASS-WORK
• A JFET has a drain current of 5 mA. If IDSS = 10 mA and VGS (off) = – 6 V,
find the value of VGS.
Metal Oxide Semiconductor FET (MOSFET)
The main drawback of JFET is that its gate must be reverse biased for proper operation
of the device i.e. it can only have negative gate operation for n-channel and positive
gate operation for p-channel.
• This means that we can only decrease the width of the channel (i.e. decrease the
conductivity of the channel) from its zero-bias size. This type of operation is referred
to as depletion-mode operation.
• Therefore, a JFET can only be operated in the depletion-mode. However, there is a
field effect transistor (FET) that can be operated to enhance (or increase) the width of
the channel (with consequent increase in conductivity of the channel) i.e. it can have
enhancement-mode operation. Such a FET is called MOSFET.
• A field effect transistor (FET) that can be operated in the enhancement-mode is called
a MOSFET.
• A MOSFET is an important semiconductor device and can be used in any of the circuits
covered for JFET. However, a MOSFET has several advantages over JFET including
high input impedance and low cost of production.
Types of MOSFETs