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Small Signal Analysis: Electronics Engineering
Small Signal Analysis: Electronics Engineering
Electronics Engineering
DC Analysis
• DC biasing is used to establish fixed dc
values for the transistor currents and
voltages called the dc operating point or
quiescent point.
• Establishes the dc operating point (Q-
point)
AC Analysis
• Frequency Response
• Low and High Cut-off Frequency
• Gain
• Computes the complex values of the node
voltages of a linear circuit as a function of
frequency of a sinusoidal signal applied at
the inputs
AC Analysis
• Small Signal Analysis
• Large Signal Analysis
Transistor Models
• BJT
– re model
– Hybrid model
• FET
– gm Model
Important Parameters
• Using two port model
Linear Amplification Process
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Common Base w/ ro
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Common Emitter
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Common Emitter
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Small Signal Analysis Procedure
• Setting all the DC sources to zero
• Replace all the capacitor by a short-circuit
• Removing all the elements bypassed by
the short circuit
• Redraw the network
• Introduce the equivalent model of the
transistor in the circuit
Small Signal Analysis Procedure
• Perform DC Analysis
• Compute for internal model parameters
• Draw the AC small signal equivalent
• Perform the circuit analysis
Example 1
• Determine re
Zi, Zo, and Av
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 2 (bypassed)
• Determine re
Zi, Zo, and Av
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 3 (unbypassed)
• Without CE
Determine re
Zi, Zo, and Av
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
gm Model
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Zi and Zo
JFET equivalent circuit
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 1
• Determine gm
rd ,Zi, Zo, and Av
given yos = 40us
- Determine AV
Ignoring the value
of rd
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 2
• Determine gm
rd ,Zi, Zo, and Av
given yos = 20uS
Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Hybrid Model (h model)
• A manufacturer’s datasheet typically
specifies h (hybrid) parameters.
• hi, hr, hf, and ho
• Each of four parameters carries a second
subscript letter; e, b, and c.
Parameters