Professional Documents
Culture Documents
PN Junction Diode I-V & Breakdown Characteristics
PN Junction Diode I-V & Breakdown Characteristics
PN Junction Diode I-V & Breakdown Characteristics
Breakdown Characteristics
http://daisy.kw.ac.kr/~k 1
yseo/
Semiconductor device lab.
Contents
Introduction
• Experiment
Fabrication
- Alloy - HP4155B measurement
- Epitaxial growth - Simwindows simulation
- Thermal diffusion - Silvaco simulation
- Ion implantation
Diode characteristics
- Forward bias
- Reverse bias
Breakdown characteristics
- Zener breakdown
- Avalanche breakdown
Kwangwoon 2/34
University Semiconductor device lab.
Introduction
Basic structure of PN junction
Si Si Si Si Si Si Si Si Si Si Si Si
h+ h+ e- e-
Si Si
B Si Si Si
B Si Si P Si Si P Si
Si Si Si Si Si Si Si Si Si Si Si Si
p-type Si n-type Si
SCR
_
+
B Si Si P Si Si
_
+
p-Type Si B Si
_
Si P Si n-Type
+
Si Si B Si Si P
_ ion
+ ion
Kwangwoon 3/34
University Semiconductor device lab.
Introduction
PN junction of equilibrium energy state V V ln N a N d
bi Fp Fn T 2
ni
Ec Ec
Ef Ec
Ef eVbi
Ev Ec
Ev Ef Ef
Ev
Ev
P N
E
eNd
Vbi
-Xp -Xp Xn
Xn x x -Xp Xn
-eNa
Kwangwoon 4/34
University Semiconductor device lab.
Introduction
Classification of the PN Junction
Homo-junction
1 um
N P
GaAs AlGaAs
1 2 3
Single Double
1 2 3
hetero-junction hetero-junction
Kwangwoon 5/34
University Semiconductor device lab.
Application of the PN Junction
BJT (Bipolar Junction Transistor)
N Tunnel diode
C PN Junction diode Solar cell
T Photo-diode
I Photodetector
Epitaxial growth
Thermal diffusion
Ion implantation
Aluminum
pellet Aluminum
Regrown region
(P+-silicon)
N-silicon N-silicon
Kwangwoon 8/34
University Semiconductor device lab.
Epitaxial growth
Kwangwoon 9/34
University Semiconductor device lab.
Reactors of epitaxial growth
Kwangwoon 10/34
University Semiconductor device lab.
Thermal diffusion
Kwangwoon 11/34
University Semiconductor device lab.
Diffusion source
Chemical Chemical Chemical
Type Condition Diffusion Reaction
Element Compound Formula
Antimony
Antimony Sb2O3 Solid
Trioxide
Arsenic Trioxide As2O3 Solid 2AsH3+3O2 As2O3+3H2O
Arsenium
Arsen AsH3 Gas
N Type
Phosphorus
POCl3 Liquid 4POCl3+3O2 2P2O5+6Cl2
Oxychloride
Phosphorus Phosphorus
P2O5 Solid
Pentoxide
phosphine PH3 Gas 2PH3+4O2 P2O5+3H2O
Boron Tribromi
BBr3 Liquid 4BBr3+3O2 2B2O3+6Br2
de
Boron Trioxide B2 O 3 Solid B2H6+3O2 B2O3+3H2O
Boron Trichlorid
BCl3 Gas 2BCl3+3H2 2B+6HCl
e
Kwangwoon 12/34
University Semiconductor device lab.
Ion implantation
SiO2 SiO2 PR PR
Si Si Junction
depth
Kwangwoon 13/34
University Semiconductor device lab.
Applications for ion implantation
1E17
Bonded wafer splitting for
silicon on insulator (SOI)
[H, He]
1E16 Polysilicon Doping
[As, B]
Dose [atoms/cm2]
Anti punch-throough
[As, B, In, Sb]
1E13 CMOS Triple
Channel engineering Retrograde well Well
[As, BF2, B, P, In, Sb] [P, B, As]
1E12
Threshold voltage(Vt)
CCD burid barrier
adjust [As, BF2, B, P, In]
[B]
1E11
0.1 1 10 100 1000 10000
Energy [keV]
Kwangwoon 14/34
University Semiconductor device lab.
I-V
I-V characteristics
characteristics of
of PN
PN Junction
Junction Diode
Diode
Diode characteristics
* Forward bias current
* Reverse bias current
Breakdown characteristics
* Zener breakdown
* Avalanche breakdown
15
Kwangwoon 16/34
University Semiconductor device lab.
Ideal I-V Characteristics
1) The abrupt depletion layer approximation applies
- abrupt boundries & neutral outside of the depletion region
Kwangwoon 17/34
University Semiconductor device lab.
Boundary Condition
Na Nd
Vbi Vt ln (Vbi : built in potential barrier )
ni
If forward bias is applied to the PN junction,
다수 캐리어 (majority carrier) 가 공간전하영역
(space charge region) 을 지나 흐른다 . 반대쪽으로
들어간 carrier 는 소수 캐리어 (minorrity carrier) 가
되어 diffusion, drift recombination 과정을 거친다 .
eVa
n p n po exp( )
kT
eVa
Pn Pno exp( )
kT
Kwangwoon 18/34
University Semiconductor device lab.
Minority Carrier Distribution
n rigion
2 (pn ( x )) (pn ( x)) pn (pn ( x ))
Dp pE g '
x 2
x po t
(Pn ( x ))
Steady state condition : 0, g ' 0, E 0
t
<n-region>
V x x
pn ( x) pno [exp( a ) 1] exp( n )
Vt Ln
<p-region>
eVa xp x
n p ( x) n po [exp( ) 1] exp( )
kT Ln
Kwangwoon 19/34
University Semiconductor device lab.
Ideal PN Junction Current
dpn ( x )
J p ( xn ) eD p
dx x xn
eD p pno Va
J p ( xn ) [exp( ) 1]
Lp Vt
Similarly ,
dn p ( x )
J n ( x p ) eDn
dx x x p
eDn p po Va
J n ( x p ) [exp( ) 1]
Ln Vt
J J n ( x p ) J p ( xn ) J s (eVa Vt
1)
eD p pno eDn n po
Js ( )
Lp Ln
Kwangwoon 20/34
University Semiconductor device lab.
Total PN Junction Current
eD p Pno eVa ( x xn )
J p ( x) [exp( ) 1] exp[ ], ( x xn )
Lp kT Lp
eDn n po eVa x xp
J n ( x) [exp( ) 1] exp[ ], ( x x p )
Ln kT Ln
Kwangwoon 21/34
University Semiconductor device lab.
Temperature Effect
eVa
J J s exp( 1)
kT
eD p pno eDn n po
Js ( )
Lp Ln
ni2 ni2
steady state : pno , n po
Nd Na
Eg
J s n exp(
2
i )
kT
Kwangwoon 22/34
University Semiconductor device lab.
Reverse Bias Generation Current
Recombination rate of excess carriers
Total reverse bias current density, JR
(Shockley-Read-Hall model)
Cn C p N t (np ni )
2
J R J s J gen
R
Cn (n n' ) C p ( p p ' )
eD p pno eDn n po ni
In depletion region, n=p=0 Js J gen e W
Lp Ln 2 o
2
CnC p N t ni
R G
Cn n'C p p '
Et Ei일때 n p ni
po no o일때
ni
R
2 o
ni
J gen e Rdx e W G
2 o
Kwangwoon 23/34
University Semiconductor device lab.
Forward Bias Recombination Current
Recombination rate of excess carriers
(Shockley-Read-Hall model)
2
CnC p N t (np ni )
R
C n ( n n' ) C p ( p p ' )
( np ni2 )
R
po (n n) no ( p p)
R = Rmax at x=o
ni eVa
Rmax exp( )
2 0 2kT
w eWni eV
J rec eRdx exp( a )
0 2 o 2kT
eVa
J rec J ro exp( )
2kT
Kwangwoon 24/34
University Semiconductor device lab.
Total Forward Bias Current
Total forward bias current density, J eVa
ln J rec ln J ro
2kT
J J rec J D eVa
ln J D ln J s
kT
eVa
J rec J ro exp( )
2kT
eVa
J J s exp[ 1]
kT
h+ e-
x
Ec
Ef
Ev
Kwangwoon 26/34
University Semiconductor device lab.
Avalanche Breakdown
Impact ionization mechanism
Predominant breakdown In(w) = M * Ino
Kwangwoon 27/34
University Semiconductor device lab.
Critical Electric Field & Voltage at Breakdown
s E 2 crit The breakdown voltage will decrease
VB for a linearly graded junction
2eN B
Kwangwoon 28/34
University Semiconductor device lab.
Metal Contacts
<Schottky contact>
<Ohmic contact> The difference of carrier concentrations
of the two materials at the contact.
No rectifying action. A barrier potential exists.
The current can flow in both directi
rectifying action occurs.
Mostly used in switching circuits.
on (turn on/off switches)
Kwangwoon 29/34
University Semiconductor device lab.
Metal Contacts I-V Characteristics
Kwangwoon 30/34
University Semiconductor device lab.
Measurement
Measurement of
of PN
PN Junction
Junction Diode
Diode
Silvaco simulation
Simwindows simulation
-report (forward & reverse bias)
HP4155B measurement
31
Kwangwoon 32/34
University Semiconductor device lab.
Simwindows Simulation (http://www-ocs.colorado.edu/SimWindows)
Kwangwoon 33/34
University Semiconductor device lab.
HP 4155B Measurement
Sweep
*MESUREMENT MODE Auto
List
*CHANNELS VAR2
MEASURE SERIES
RESISTANCE
STBY
UNIT VNAME INAME MODE FCTN VAR1'
0 ohm
SMU1:MP
0 ohm
SMU2:MP
SMU3:MP Vg Ig V VAR2
SMU4:MP Vsb Isb COMMON CONST
------ -------
VSU1
------ -------
VSU2
VMU1 ------ -------
SiO 2 Al SiO 2
VMU2 ------ -------
DELETE p-type
ROW
n-type
VAR1
CHANNEL USER USER NEXT N + -Si
DEF FCTN VAR PAGE
Ohmic contact
Kwangwoon 34/34
University Semiconductor device lab.