RIJO V JOHN

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 INTRODUCTION

 Extreme ultraviolet lithography is an advanced technology for

making microprocessors a hundred times more powerful than
those made today.
 optical projection lithography has been the lithographic technique
used in the high-volume manufacture of integrated circuits.
 The key to creating more powerful microprocessors is the size of
the light's wavelength. The shorter the wavelength, the more
transistors can be etched onto the silicon wafer.
 Deep-ultraviolet lithography uses a wavelength of 240
nanometers.
 The current technology will reach its limit by 2010

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 WHY EUVL?

 Two fundamental characteristics of an imaging system are

Resolution (RES) and Depth of focus (DOF).
 RES = k1 λ / NA
 and
 DOF = k2 λ / (NA)2

 UV radiation has shorter λ, high energy.

 If we further reduce wavelength , it become EUV radiation-13nm
 EUVL is required for the continuity of Moore’s law

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 DEEP UV TECHNOLOGY
 Silicon is the traditional substrate used in chip making.
 To create IC light is directed to mask(stencil of circuit pattern).
 Light shines through mask,then through a series of optical lenses
that shrinks the image down.
 Projected to wafer covered with photoresist
 Light hardens the photoresist.
 Region not exposed remain gooey and is chemically washed away
and the remaining is hardened photoresist and exposed silicon
wafer.

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 EUVL TECHNOLOGY

 EUVL imaging systems are entirely reflective.

 EUV reflectivity of individual materials at near-normal incidence
is very low. In order to achieve reasonable reflectivities near
normal incidence, surfaces must be coated with multilayer, thin-
film coatings known as distributed Bragg reflectors.
 Because EUVL utilizes short wavelength radiation for imaging,
the mirrors that comprise the camera will be required to exhibit an
unprecedented degree of perfection in surface figure and surface
finish in order to achieve diffraction-limited imaging.
 EUVL is carried out in vaccum.

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 EUVL PROCESS
 Laser is directed at a get of xenon gas. When laser hits xenon gas it
heats the gas and creates plasma.
 Electrons began to come out of plasma and it radiates light at
13nm.
 Light travels in to a condenser , which gathers the light so that it is
directed on to a mask.
 The pattern on the mask is reflected on to a series of curved
mirrors which shrinks the image and focus the image to silicon
wafer.

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MULTILAYER REFLECTORS

EUV multilayer are made of alternating

layers of Mo and Si, and they function
best for wavelengths of about 13 nm.
peak reflectivites of 68% can now be
routinely attained for Mo:Si ML

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 IMAGE FORMATION

Top: EUV multilayer and absorber constituting mask pattern for

imaging a line.
Bottom: EUV radiation reflected from the mask pattern is absorbed
in the resist and substrate, producing photoelectrons and secondary
electrons.
These electrons increase the extent of chemical reactions in the
resist.

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 EUVL ADVANTAGES

 EUVL leverages much of the learning and supplier infrastructure

established for conventional lithography.
 Decrease in size of chip but the speed and storage capacity
increase.
 EUVL technology achieves good depth of focus and linearity for
both dense and isolated lines with low NA.
 The robust4X masks are patterned using standard mask writing
and repair tools and similar inspection methods can be used as for
conventional optical masks.
 The low thermal expansion substrates provide good image
placement.
 Experiments have shown that existing DUV can be extended for
use with EUV.  

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 EUVL Defects
 Positive charging, due to ejection
of photoelectrons freed from the
top resist surface by the EUV
radiation.
Contamination deposition on the
resist from ambient or outgassed
hydrocarbons, which results from
EUV- or electron-driven reactions.

 No known method for repairing defects in a ML coating.

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 CONCLUSION
 EUVL will opens a new chapter in semiconductor technology.
 Successful implementation of euvl would enable projection
lithography to remain semiconductor indusry’s pattern
technology of choice for years to come.
 Much work is to be done in order to determine whether euvl is
ready for large scale production.

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 REFERENCES

 Sang Hun Lee, Yashesh Shroff, Manish Chandhok. Flare and Lens
Aberration Requirements for EUV Lithographic Tools.
Proceedings of SPIE, Volume 5751, Emerging Lithographic
Technologies IX, May 2005. Pages 707–714.
 Euv lithography- vivek bakshi
 A complete course of lithography by Alois.
 www.howstuffwork.com
 www.sandia.com
 www.euvl.com
 www.lasers.llnl.gov/lasers/IST/euvl.html

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Question time

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