* GTO *

(GATE TURN OFF THYRISTOR)

PRESIDENT BY :-

SUJIT PATANKAR (17103C2017)

ROHIT MANDAVKAR (17103C2037)

PRATHAMESH VALANKAR (16103C2030)

 *CONTENT*
• Basic information of GTO
• GTO symbole
• GTO structure
• GTO characteristics
• Compaerion of SCR & GTO
• Application of GTO
 *BASIC INFORMATION OF GTO*

• The full form of GTO is gate turn off thyristor. It is a special type of
thyristor.
• GTO a active semiconductor device it was invented at general electric.
• GTO is a fully controllable switch which can be turn ON and turn OFF by
gate signal where as conventional thyristor can be turn ON by gate pulse
but can not turn OFF by gate pulse.
• During turn ON it is work like a conventional thyristor.
• GTO is a three terminal, four layer device.
• GTO has high voltage blocking capability and high over current capability.
• GTO is use for chopper and PWM inverter applications.
*GTO SYMBOL*
*GTO STRUCTURE*
• GTO can be turn ON by applying +ve gate pluse.
• GTO can be turn OFF by applying –ve gate pluse.
• GTO turn ON is not as reliable as SCR.
• GTO is 10 times faster then SCR.
• To turn OFF process we connect GTO in parallel
*GTO CHARACTERISTICS*
 *COMPARERION OF SCR & GTO*

Thyristor GTO
Characteristic Descriotion ( 1600 V, 350 A ) (1600 V, 350 A )

VT ON On state voltage drop 1.5 V 3.5 V

ton, Igon Turn on time, gate 8 µs, 200 mA 2 µs, 2 A

current

Toff Turn off time 150 µs 15 µs

 *APPLICATIONS OF GTO*

• AC deives
• DC chopper
• DC Circuit breaker