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Microwave Engineering PPTs
Microwave Engineering PPTs
Microwave Engineering PPTs
Text Book:
Samuel Y. Liao, Microwave Devices and Circuits, 3/e,
Prentice Hall of India, 2003.
Module I:Transferred Electron Devices
• Introduction
• GUNN effect diodes (GaAs diode)
• GUNN diode principle of operation
• RWH theory
• Modes of operation
• LSA diodes
• Microwave generation and amplification.
Introduction
• Positive resistance absorbs power (passive devices).
• Negative resistance generates power (active devices).
• Transistors operates with either junctions or gates.
• TEDs are bulk devices having no junctions or gates.
• Majority of transistors are fabricated from elemental
semiconductors (Si or Ge).
• TEDs are fabricated from compound semiconductors such as
Gallium Arsenide(GaAs), Indium Phosphide(InP), Cadmium
Telluride(CdTe).
• Transistors operate with “warm” electrons whose energy is not
much greater than the thermal energy(26mV at room
temperature) of electrons in the semiconductor.
• TEDs operate with “hot” electrons whose energy is very much
greater than the thermal energy.
GUNN effect diodes (GaAs diode)
• J.B. Gunn discovered GUNN Diode in 1963.
• The upper trace was the expanded view of the lower trace.
RIDLEY-WATKINS-HILSUM (RWH)
Theory
According to the
energy band theory
of n-type GaAs, a
high mobility lower
valley is separated
by an energy of
0.36eVfrom a lower
mobility upper
valley.
Two value model of electron energy versus wave number for n-type GaAs
Data for two valleys in GaAs
Electron transfer mechanism
• e = Electron charge
• μ = Electron mobility
• = Electron density in the lower valley
• = Electron density in the upper valley
• is the electron density
Current versus field characteristics of a two valley semiconductor
According to RWH theory, in order to exhibit negative
resistance the energy band structure of semiconductor
should satisfy
𝐽 = 𝑞𝑛𝑣
Formation of high field domain
• A decrease in drift velocity with increasing in electric
field can lead to the formation of a high field domain
for microwave generation and amplification.
• Efficiency: 20%
3. Quenched domain mode:
• If 𝑛𝑜 𝐿 becomes less than 1012 / cm2, domain formation is inhibited and the
device exhibits a non uniform field distribution that is stable with time and
space.
• Such a diode can amplify signals in the vicinity of the transit time
frequency and its harmonics without oscillation.