PULSED LASER DEPOSITION OF

ZINC OXIDE ON SILICON SUBSTRATE

MECHATRONICS AND INSTRUMENTATION LAB

INDIAN INSTITUE OF TECHNOLOGY

Submitted to : Submitted by :
Dr. I. A. Palani Karmishtha Shaktawat
Department of Mechanical B.Tech (Mechatronics)
Engineering 2018BTMT005
 INTRODUCTION
Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique
where a high-power pulsed laser beam is focused inside a vacuum chamber to
strike a target of the material that is to be deposited. This material is vaporized
from the target (in a plasma plume) which deposits it as a thin film on a
substrate (such as a silicon wafer facing the target). This process can occur
in ultra high vacuum or in the presence of a background gas, such as oxygen
which is commonly used when depositing oxides to fully oxygenate the
deposited films.
 WORKING PRINCIPLE
Pulse Laser Techniques (PLD) uses high power laser pulses to melt, evaporate and ionize material from the
surface of a target.
In principle PLD is an extremely simple technique, which uses pulses of laser energy to remove
material from the surface of a target, as shown below in the diagram.
The vaporized material, containing neutrals, ions, electrons etc., is known as a laser-produced plasma
plume and expands rapidly away from the target surface Film growth occurs on a substrate upon which
some of the plume material recondenses.
 LITERATURE SURVEY

(a) SEM images of ZnO thin

(b) PL spectra of thin film Zno (c) Thin film of ZnO
film at 200 degree Celsius
deposited at various conditions crystalline nanorod
substrate temperature
arrays
 ELECTRICAL PROPERTIES OF ZnO THIN FILM
For both substrate temperatures, the electrical
resistivity of ZnO films increases with increasing
vacuum pressure from 5 to 50 Pa. With increasing
vacuum pressure, the concentration of VO
decrease, leading to a higher electrical resistivity of
ZnO thin films. It is also found that the resistivity
decreases with increasing substrate temperature.
This phenomenon may be due to the enhancement
of film crystallinity with increasing temperature and
consequently the electron mobility increases.
 MOTIVATION
1.To optimize the pulsed laser deposition of ZnO thin films
with respect to conductivity and optical transparency by
vacuum pressure, laser energy and substrate
temperature.

2.To investigate the influence of vacuum

pressure, substrate temperature and laser fluence and su
bstrate temperature on ZnO thin films as it is used in
various optoelectronic device applications.
 IMPORTANT EXPERIMENTAL
PARAMETERS
• Laser Wavelength :- 532 nm
• Laser Power :- 0.8 W
• Laser Spot Diameter :- 0.25 mm
• Vacuum Pressure :- 5.5 X 10-5
• Stand of Distance (SOD) :- 2cm
• Substrate Temperature :- 26°C
• Target :- ZnO (99.9% purity)
• Substrate :- Soda lime Glass Slide (1X1 cm ) or Silicon Wafer (0.5 µm)
ND: YAG PULSED LASER SYSTEM

Nd: YAG laser is a

neodymium based laser.
Nd stands for
Neodymium (rare earth
element) and YAG stands
for Yttrium Aluminum
Garnet (Y3Al5 O12) . It is
a four level solid state
laser.
PULSED LASER DEPOSITION SYSTEM
Diagrammatic Explanation of PLD System
RESULTS: MICROSCOPIC STRUCTURE OF ZnO THIN FILM
(a) 0.2W (b) 0.3W (c) 0.4W

(d) 0.6 W (e) 0.5 W (f) 0.7 W

 RESULTS Cont.
ZINC OXIDE THIN FILM

RESISTIVITY (Electrical Properties)

SILICON
SUBSTRATE Zinc Oxide (Target) :- 170 KΩ -180 KΩ
Zinc Oxide (Thin Film) :- 2.5 KΩ
Silicon (Substrate) :- 60 KΩ
 CONCLUSION
• 2 cm stand of distance (SOD) gives better uniformity than other SODs
like 3 or 4 or 5 cm.
• Spherical shape of ZnO nanostructures are observed from SEM
images.
• 0.2 W & 0.3W laser powers shows uniform deposition of ZnO thin
film.
• The resistivity of ZnO thin film shows promising results (2.5 KΩ) as
like the results from the literature.
 ACKNOWLEDGEMENT

- I would like to express my special thanks of gratitude

to Dr. I. A. Palani sir for giving me such a great
exposure.
- I would also like to thank Mrs. Nandini Patra ma’am
and all the lab members for their constant guidance
and support.
Thank you

15