Ideal model:dimension and voltages scale together by the same scale factor Constant Voltage(Partial scaling) Most common model until recently:only the dimensions change but voltages remains constant General scaling most realastic for todays situation:voltage and dimension scale with differnt factor Scaling of voltages may not be practical. Short channel effects The peripheral and interface circuitry may require certain voltage levels. Quantity Sensitivity Constant Field Constant Voltage Scaling Parameters Length L 1/S 1/S Width W 1/S 1/S Gate Oxide Thickness tox 1/S 1/S Supply Voltage Vdd 1/S 1 Threshold Voltage VT0 1/S 1 Doping Density NA, ND S S2 Device Characteristics Area (A) WL 1/S2 1/S2 W/Ltox S S D-S Current (IDS) (Vdd - vT)2 1/S S Gate Capacitance (Cg) WL/tox 1/S 1/S Transistor On-Resistance (Rtr) Vdd/IDS 1 1/S Intrinsic Gate Delay () RtrCg 1/S 1/S2 Clock Frequency f=1/ S S2 Power Dissipation (P) IDSVdd 1/S2 S Power Dissipation Density (P/A) P/A 1 S3 Constant Voltage Scaling › Practical, since the power supply and signal voltage are unchanged › Since Vdd => Vdd and IDS => SIDS, the power P => SP. The area A => A/S2. The power density per unit area increases by factor S3. Cause localized heating and heat dissipation problems. › This will cause serious reliability problems for the scaled transistor, such as Electromigration, hot carrier degradation, oxide breakdown, and electrical over stress › Electric field increases by factor S. Can cause failures such as oxide breakdown, punch-through, and hot electron charging of the oxide. › With all of these problems, why not use full scaling reducing voltages as well? Done – Over last several years, departure from 5.0 V: 3.3, 2.5, 1.5 V Electromigration: the high current density causes This displacement of atoms finally these voids grow more to form gap in the metal causing open circuit. Gate Oxide break down:At high electric field dielectric breaks and counduct large amount of current. Hot carrier injection (HCI):electrons or a “holes” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state .Since the charge carriers can become trapped in the gate dielectric of a MOS transistor the switching characteristics of the transistor can be permanently changed Electrical Over-Stress :thermal damage that may occur when an electronic device is subjected to a current or voltage that is beyond the specification limits of the device.