WHY SCALING???

 Constant Electric field(Full scaling)

Ideal model:dimension and voltages
scale together by the same scale factor
 Constant Voltage(Partial scaling)
Most common model until recently:only
the dimensions change but voltages
remains constant
 General scaling
most realastic for todays situation:voltage
and dimension scale with differnt factor
 Scaling of voltages may not be
practical.
 Short channel effects
 The peripheral and interface circuitry
may require certain voltage levels.
Quantity Sensitivity Constant Field Constant Voltage
Scaling Parameters
Length L 1/S 1/S
Width W 1/S 1/S
Gate Oxide Thickness tox 1/S 1/S
Supply Voltage Vdd 1/S 1
Threshold Voltage VT0 1/S 1
Doping Density NA, ND S S2
Device Characteristics
Area (A) WL 1/S2 1/S2
 W/Ltox S S
D-S Current (IDS) (Vdd - vT)2 1/S S
Gate Capacitance (Cg) WL/tox 1/S 1/S
Transistor On-Resistance (Rtr) Vdd/IDS 1 1/S
Intrinsic Gate Delay () RtrCg 1/S 1/S2
Clock Frequency f=1/ S S2
Power Dissipation (P) IDSVdd 1/S2 S
Power Dissipation Density (P/A) P/A 1 S3
 Constant Voltage Scaling
› Practical, since the power supply and signal voltage are
unchanged
› Since Vdd => Vdd and IDS => SIDS, the power P => SP. The area A
=> A/S2.
The power density per unit area increases by factor S3. Cause
localized heating and heat dissipation problems.
› This will cause serious reliability problems for the scaled transistor,
such as Electromigration, hot carrier degradation, oxide
breakdown, and electrical over stress
› Electric field increases by factor S. Can cause failures such as
oxide breakdown, punch-through, and hot electron charging of
the oxide.
› With all of these problems, why not use full scaling reducing
voltages as well? Done – Over last several years, departure from
5.0 V: 3.3, 2.5, 1.5 V
 Electromigration: the high current density causes This displacement
of atoms finally these voids grow more to form gap in the metal
causing open circuit.
 Gate Oxide break down:At high electric field dielectric breaks and
counduct large amount of current.
 Hot carrier injection (HCI):electrons or a “holes” gains
sufficient kinetic energy to overcome a potential barrier necessary
to break an interface state .Since the charge carriers can become
trapped in the gate dielectric of a MOS transistor the switching
characteristics of the transistor can be permanently changed
 Electrical Over-Stress :thermal damage that may occur when an
electronic device is subjected to a current or voltage that is beyond
the specification limits of the device.