Sanskrithi School of Engineering

Department of Electronics & Communication Engineering

Technical Seminar Presentation on:

EXTREME-ULTRAVOILET-
LITHOGRAPHY
Submitted by:
ALEKHYA .K
(16KF1AO416)
 CONTENTS
 INTRODUCTION- What is this all about?
 Is there a problem with current technology?
 Moore’s law and Problem with Moore’s law
 Lithography
 Introduction to EUVL
 Basic concepts
 Why do we need EUVL?
 EUVL Process
 Basic technology for EUV
 EUV masks
 All Reflective Optics
 Advantages
 Disadvantages
 Conclusion
 WHAT IS LITHOGRAPHY

Lithography is akin to photography in that it

uses light to transfer images onto a substrate

The term lithography is derived from the words

‘lithos’ meaning stone and ‘graphy’ meaning
write.

Our stone is silicon wafer and writing is done

using a photo sensitive polymer.
 INTRODUCTION

Extreme ultraviolet lithography is an advanced

technology for making microprocessors a hundred
times more powerful than those made today.

Optical projection lithography has been the

lithographic technique used in the high-volume
manufacture of integrated circuits.

The key to creating more powerful microprocessors

is the size of the light's wavelength.
 BASIC CONCEPT BEHIND EUV
Minimum lithographic feature size = k1*λ
k1: “Process complexity factor” NA
λ: Exposure wavelength
NA: Numerical aperture of the lens.Higher NA means smaller depth of focus.
 WHY EUVL

EUVL is required for the continuity of Moore’s law

The number of transistors that can be placed inexpensively

on an integrated circuit doubles approximately every two
years.

EUVL is a next generation lithography technique.

 EUVL
Glass lens replaced by
mirrors….
λ= 13.5nm…
Reflective masks are to
be used.
more power…faster mp

This wafer was patterned on a

prototype device using extreme-
ultraviolet lithography (EUVL).
 EUVL PROCESS
Laser is directed to a jet of xenon gas to produce
plasma

To create the IC, light is directed to a mask.

Light reflects from the mask then through a series

of mirrors that shrinks the image down.

Projected to wafer covered with photoresist

Light hardens the photoresist.

Region not exposed remain gooey and the

remaining is hardened photoresist and exposed
silicon wafer.
 BASIC TECHNOLOGY FOR EUV
All solids, liquids, and gases
absorb 13.5nm – so system is
under vacuum

Mask must be reflective and

exceptionally defect-free

13.5nm photons generated by

plasma source

All-reflective optics
(all lens materials are
opaque)
EUV MASKS
 All-Reflective Optics
All solids, liquids, and gases absorb 13.5nm
photons
- So fused silica lenses are OUT …
- Indeed, all refracting lenses are OUT

Making EUV mirrors is no cakewalk, either …

 50 or more alternating Mo/Si layers give the
mirror its reflectivity
 Each layer is 6.7nm thick and requires atomic
precision
 Since the angle of incidence changes across
the mirror, so do the required Si layer
thicknesses
Net reflectance: ~70%
 IMAGE FORMATION

Top: EUV multilayer and absorber constituting mask

pattern for imaging a line.

Bottom: EUV radiation reflected from the mask pattern

is absorbed in the resist and substrate, producing
photoelectrons and secondary electrons.

These electrons increase the extent of chemical

reactions in the resist.
 EUVL ADVANTAGES
Microprocessors made by euvl are up to
to 100 times faster than today's most powerful chips

 Decrease in size of chip but the speed increases.

 EUVL technology achieves good depth of focus and

linearity for both dense and isolated lines with low
NA.

Increase in storage capacity.

The low thermal expansion substrates provide good

image placement.
 EUVL DEFECTS
Positive charging, due to ejection of
photoelectrons

Contamination deposition on the resist from

out gassed haydrocarbons, which results from
EUV- or electron-driven reactions.

No known method for repairing defects in a ML

coating.

Entire process has to be carried out in vacuum.

Mirrors used are only 70% reflective.

 CONCLUSION
EUVL will opens a new chapter in
semiconductor technology.

Successful implementation of EUVL would

enable projection lithography to remain
semiconductor industry’s pattern technology of
choice for years to come.

Much work is to be done in order to

determine whether EUVL is ready for large
scale production.
REFERENCES

 www.google.com
 www.wikipedia.com

 www.studymafia.org
THANKS