Engr. Silverio V.

Magday Jr
Bipolar Junction Transistor
(BJT)

1
Course Outline

Rex Jason H. Agustin

• Transistor Structure
• Basic Transistor Operation
• Transistor Characteristics and Parameters
• The Transistor as an Amplifier
• The Transistor as a Switch
• Nature of Problems in Transistors

2
HISTORY OF TRANSISTOR
• In 1904, the vacuum-tube diode was introduced by J. A.
Fleming.
• In 1906, Lee De Forest added a third element, called the
control grid, to the vacuum diode, resulting in the first
amplifier, the triode.
• Production rose from about 1 million tubes in 1922 to about
100 million in 1937.
• In the early 1930s the four-element tetrode and five-element
pentode gained prominence in the electron-tube industry.
• In the years to follow, the industry became one of primary
importance and rapid advances were made in design,
manufacturing techniques, high-power and high-frequency
applications, and miniaturization.
BIPOLAR JUNCTION TRANSISTOR
(BJT)
• A semiconductive device used for amplification and switching
applications.

• William Shockley, John Bardeen and Walter Brattain were the

co-inventors of transistor at Bell Laboratories in December
23,1947.
BIPOLAR JUNCTION TRANSISTOR
(BJT)
• Dr. Shockley
Born: London, England, 1910,
PhD Harvard, 1936

• Dr. Bardeen
Born: Madison,Wisconsin,1908
PhD Princeton, 1936

• Dr. Brattain Born: Amoy, China,

1902
PhD University of Minnesota,
1928

All shared the Nobel Prize in

1956 for this contribution.
• It was John Robinson

Rex Jason H. Agustin

Pierce who coined
the term “Transistor”
(first name – Point
Contact Transistor)

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BIPOLAR JUNCTION TRANSISTOR
(BJT)
• The term Bipolar is because two type of charges (electrons
and holes) are involved in the flow of electricity

• The term Junction is because there are two pn junctions

• TRANSfer and resISTOR

• Composed of two charges

• 3 terminal current controlled device

• Emitter heavily doped and base lightly doped

CONSTRUCTION AND SYMBOL

• The arrow in the

graphic symbol
defines the
direction of
emitter current
(conventional
flow) through the
device.
Transistor Structure

Rex Jason H. Agustin

C (collector) C (collector)

n Base-Collector p
junction

p B (base) n
B (base)
Base-Emitter
n junction p

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E (emitter) E (emitter)
Schematic Symbols

Rex Jason H. Agustin

C C

B B

E E
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Transistor Operation

Rex Jason H. Agustin

BC reverse-biased
+ +
-
+ + -
BE forward-biased
-
--

Biasing an NPN Transistor Properly 11

Transistor Currents

Rex Jason H. Agustin

+ IC
+ I
C

IB n IB
+ p + IB + IC = IE

n
IE
IE - 12
-
Problem1: A bipolar NPN transistor has a DC current
gain, (Beta) value of 200. Calculate the base
current Ib required to switch a resistive load of 4mA.

Rex Jason H. Agustin

Problem2: An NPN Transistor has a DC base bias
voltage, Vb of 10v and an input base resistor, Rb of
100kΩ. What will be the value of the base current
into the transistor.

13
Transistor Operation

Rex Jason H. Agustin

BC reverse-biased
- -
+
- - +
BE forward-biased
+
+-

Biasing a PNP Transistor Properly 14

Transistor Currents

Rex Jason H. Agustin

IC
IC

IB p IB
n IE = IB + IC

p
IE
IE 15
Transistor Characteristics and Parameters

Rex Jason H. Agustin

IC DC = IC / IB
RC

+ DC = IC / IE
RB +
- VC
+ + -
VBB IB IE
C
-
--

16
Transistor DC Bias Circuit
Regions of BJT
1. Base
• Region to which carriers f
• low from emitter to collector
1017 dopants/cm3
• Moderately doped

2. Emitter
• Region from which carriers flow
• 1019 dopants/cm3
• Heavily doped

3. Collector
• Region to which carriers flow
• 1015 dopants/cm3
• Lightly doped
• Largest
Transistor Characteristics and Parameters

Rex Jason H. Agustin

IC
RC

RB + +
- VC
+ + -
VBB IB IE
C
-
-
-

Problem 3. Determine DC and IE for a transistor 18

where IB = 50 A and IC = 3.65 mA
Transistor Characteristics and Parameters

Rex Jason H. Agustin

IC
RC

RB + +
- VC
+ + -
VBB IB IE
C
-
-
-

Problem 4. A certain transistor has a DC of 200. 19

When the base current is 50 A determine the
collector current
Current and Voltage Analysis

Rex Jason H. Agustin

• IB : dc base current
• IE : dc emitter current
IC • IC : dc collector current
RC
• VBE : dc voltage at base
+
RB VCB + with respect to
- VCE VCC emitter
+ + -
IB
VBB IE • VCB : dc voltage at
VBE -
- collector with
respect to base

• VCE : dc voltage at
collector with 20
respect to emitter
BJT CURRENTS AND VOLTAGES
COMMON CONFIGURATIONS

Rex Jason H. Agustin

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BJT REGIONS OF OPERATION
a. Active Region
• Base-emitter junction
is forward biased and
the collector-base
junction is reverse
biased.
• Transistor’s active
operation as an
amplifier
BJT REGIONS OF OPERATION

b. Saturation Region
• both junctions are
forward biased
• switch on operation
for the transistor
BJT REGIONS OF OPERATION
c. Cut off Region
• both junctions are
reverse biased
• switch off operation for
the transistor

BJT REGIONS OF OPERATION

BJT REGIONS OF OPERATION
Loadline and Q-point
• Loadline is a straight line
drawn on the collector
curves between the cut-
off and saturation points
of the transistor
• Q-point (Quiescent
Point) is the operating
point of the transistor
with the time varying
sources out of the circuit
Current and Voltage Analysis

Rex Jason H. Agustin

IC VBE  0.7 V
RC
+ VRB = VBB - VBE
RB VCB +
- VCE VCC
+ -
VBB
IB +
IE
VRB = IBRB
VBE -
-
IB = ( VBB – VBE ) / RB
VCE = VCC - VRc
where DC IB = IC
VRc = ICRC
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VCB = VCE - VBE
VCE = VCC - ICRC
Current and Voltage Analysis

Rex Jason H. Agustin

RC 100 

+
+
RB = 10k - VCC
+ + - 10V
VBB
-
5V -

Problem 5. Determine IB, IC, IE

29
and VCE , and VCB in the circuit if
DC = 150
Current and Voltage Analysis

Rex Jason H. Agustin

IC
RC

+
RB VCB +
- VCE VCC
+ + -
IB
VBB IE
VBE -
-

Problem 6. Determine IB, IC, IE and VCE , and VCB

if DC = 90 , RB = 22k , RC = 220 , VBB = 6V , 30
VCC = 9V
Collector Characteristic Curve

Rex Jason H. Agustin

RC 1.0k 

+
+
RB = 10k - VCC
+ + DC = 50 - 10V
VBB
-
3V -

Problem 7. Determine whether or not the 31

transistor is in saturation. Assume VCE = 0.2V
Collector Characteristic Curve

Rex Jason H. Agustin

RC 180 

+
+
RB = 6.8k - VCC
+ + DC = 125 - 12V
VBB
-
1.5V -

Problem 8. Determine whether or not the 32

transistor is in saturation. Assume VCE = 0.2V
BIASING BJT
TRANSISTOR BIASING
Bias
• an electrical, mechanical, or magnetic force applied to a
device to establish a desired electrical or mechanical reference
level for its operation.
• is a DC voltage or current that sets the operating point for
amplifying the AC signal
TRANSISTOR BIASING CIRCUITS
1. FIXED- BIAS CIRCUIT
TRANSISTOR BIASING CIRCUITS
1. FIXED- BIAS CIRCUIT
EXAMPLE
Problem 9. Determine the following for the fixed-bias
configuration of
(a) IBQ and ICQ
(b) VCEQ
(c) VB and VC
(d) VBC
 Rex Jason H. Agustin
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TRANSISTOR BIASING CIRCUITS
2. EMITTER-STABILIZED BIAS
TRANSISTOR BIASING CIRCUITS
2. EMITTER-STABILIZED BIAS
EXAMPLE
• For the emitter bias network of Figure determine:
(a) IB
(b) IC
(c) VCE
(d) VC
(e) VE
(f) VB
(g) VBC
 Rex Jason H. Agustin
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TRANSISTOR BIASING CIRCUITS
3. FEEDBACK BIAS CIRCUIT
EXAMPLE
Determine the quiescent levels of ICQ and VCEQ for the network
 Rex Jason H. Agustin
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TRANSISTOR BIASING CIRCUITS
4. VOLTAGE DIVIDER BIAS CIRCUIT
(EXACT ANALYSIS)
TRANSISTOR BIASING CIRCUITS
4. VOLTAGE DIVIDER BIAS CIRCUIT
(EXACT ANALYSIS)
EXAMPLE
Determine the dc bias voltage VCE and the current IC for the
voltage-divider configuration
 Rex Jason H. Agustin
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TRANSISTOR BIASING CIRCUITS
4. VOLTAGE DIVIDER BIAS CIRCUIT
(APPROXIMATE ANALYSIS)
BIASING PNP TRANSISTORS
 EXAMPLE
For the voltage-divider bias
configuration, determine:
(a) IBQ
(b) ICQ
(c) VCEQ
 Rex Jason H. Agustin
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Given that ICQ = 2 mA and VCEQ = 10 V, β = 100 determine
R1 and RC for the network

DESIGN OPERATIONS
 Rex Jason H. Agustin
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BIASING PNP TRANSISTORS
Maximum Transistor Ratings

Rex Jason H. Agustin

The product of VCE and IC
IC = PD(max) / VCE
must not exceed the maximum
power dissipation.
VCE = PD(max) / IC Both VCE and IC cannot be
maximum at the same time.

A certain transistor is to be operated with VCE = 6V.

If its maximum power rating is 250mW, what is the
most collector current that it can handle?
57
Transistor as an Amplifier

Rex Jason H. Agustin

Vin

RC VBB

0
RB Vc
VCC
Vin r’e

Vb
VCC
VBB

(a.) circuit with ac input voltage and 0

dc bias voltage superimposed 58
(b.) waveforms
Field Effect Transistors
(FET) – 1
 JFET construction and operation
 JFET biasing circuits
Objectives
• List the types of field-effect transistors (FETs).
• Explain the relationship between JFET channel width
and drain current (ID).
• State the relationship between gate-source voltage
(VGS) and drain current (ID).
• Describe the gate input impedance characteristics of
the JFET.
• Determine the range of Q-point values for a given JFET
biasing circuit.
• List and explain the primary advantages and
disadvantages of each of the three types of JFET biasing
configurations.
Introduction
The BJT is a current-controlled device,
meaning that its input current controls its output
characteristics. In contrast, the field-effect transistor
(FET) is a voltage-controlled component that, like the
BJT, is used in a variety of amplification and switching
applications.
There are two basic types of FET: the junction
FET (JFET) and the metal-oxide-semiconductor FET
(MOSFET). The focus of this chapter is on the JFET
and basic JFET circuits. Among the topics covered in
this lecture are JFET construction and operation, and
JFET biasing circuits
JFET
• The JFET a three-terminal device that
contains two semiconductor materials and
a single junction.
• The three terminals of the JFET are called
the source, drain, and gate.

WATER
JFET Construction

Drain Drain
Channel

Gate Gate

Source Source
P - CHANNEL N - CHANNEL
Junction Field-Effect Transistor

Drain Drain
D D

Gate G Gate G
p n p n p n

S S

Source Symbol Source Symbol

n-channel p-channel
JFET schematic symbols

Drain Drain

Gate Gate

Source Source

N - CHANNEL P - CHANNEL
Biasing JFET

JFET is always operated

with VGG reverse-biased
JFET biased for conduction

P P
Greater VGG
Less VGG
JFET Characteristics and Parameters
• Pinch-off voltage
• Shorted-Gate Drain Current (IDSS)
• Gate-Source Cutoff Voltage (VGS(off))
• JFET Drain Characteristic and Transfer
Characteristic Curve

• Drain Characteristic Curve

Shockley’s Equation

2
 VGS 
ID  I DSS  1  
 VP 
William Bradford Shockley (1910 -1989) –
co-inventor of the first transistor and
formulator of the field effect theory
employed in the development of the
transistor and FET.
• Gate Resistance and Capacitance

The gate of a JFET is always reverse biased (under normal

operating circumstances). For this reason, the gate
resistance of a JFET is extremely high, typically in the G
ohms range. This high gate impedance is the primary
advantage that the JFET has over the BJT. When the gate
terminal of a JFET is used as the component input, the
high resistance of the gate presents virtually no load on
the source.
VGS
RIN 
IGSS
Ciss, input capacitance, is a result of JFET operating with a
reversed biased pn junction.
JFET Transfer Characteristics
ID Shockley’s equation: 2
 V 
IDSS I D  I DSS 1  GS 
 V 
 GS ( off ) 
Forward transconductance:
I D  V 
y fs or g m   g m 0 1  GS 
VGS  V 
 GS ( off ) 
VGS
2 I DSS
VGS(off) 0 g m0  is value of gm at VGS = 0
| VGS ( off ) |
Note: gm is max. at VGS = 0 and min. at VGS(off)
Example Problem # 1
• The following information is included on the data sheet for a
2N5457 JFET: typically, IDSS = 3.0 mA, VGS(off) = -6V maximum,
and yfs(max) = 500 S. Using these values, determine the
forward transconductance for VGS = -4V, and find ID at this
point.
JFET Biasing Circuits
• Gate Bias
• Self-Bias
• Voltage-Divider Bias
Gate Bias
Gate Bias: Biasing equations

VGS   VGG
2
 VGS 
I D  I DSS  1  
 VP 
VDS  VDD  I DR D
Base Bias
Base Bias: Biasing equations

VGS   I DR S
2
 V 
I D  I DSS  1  GS 
 V 
 GS (off ) 
VDS  VDD  I D ( R D  R S )
JFET With Self-Biasing
+VDD • Large RG is required to
prevent shorting of
input signal to ground
RD and to prevent loading
VG = 0 on the driving stage.
• VGS = -IDRS
RG + • VD = VDD - IDRD
RS_ IS
• VDS = VD - VS
= VDD - ID(RD+RS)
Example Problem # 2
• Find VDS and VGS in figure shown. For
the particular JFET in this circuit, the
internal parameter values such as gm,
VGS(off), and IDSS are such that a drain
current (ID) of approximately 5 mA is
produced. Another JFET, even of the
same type, may not produce the same
results when connected in this circuit
due to the variations in parameter
value.
Setting Q-Point of JFET
• First, determine ID for a desired value of VGS either by using
transfer characteristic curve or Shockley’s equation.
• Then calculate RS = |VGS/ID|
• For midpoint bias (i.e. ID = 0.5 IDSS), make VGS=VGS(off)/3.4
• To set VD = 0.5 VDD , pick RD = VDD/(2ID)
Example Problem # 3
• Determine the value of RS required to self-bias a p-channel
JFET with IDSS=25 mA and VGS(off) = 15V. VGS is to be 5 V
Voltage-Divider Bias
Voltage-Divider Bias: Biasing
equations

 R2 
VG  VDD  
 R1  R 2 
VG  VGS
ID 
RS
VDS  VDD  I D ( R D  R S )
Voltage-Divider Bias
To keep the gate-source junction +VDD
reverse-biased, VS > VG
VS = IDRS
R1 RD ID
 R2 
VG   VDD VG
 R1  R2 
VS = VG - VGS VS
R2
RS IS
VS VG  VGS
ID  
RS RS
Example Problem # 4
• Determine the ID and VGS for the JFET with
voltage-divider bias in Figure shown, given that
for this particular JFET the parameter values are
such that VD = 7V
Graphical Analysis of
Voltage-Divider Biased JFET

ID
For ID = 0, VS = IDRS = 0, and
IDSS VGS = VG - VS = VG
For VGS = 0,
VG  VGS VG
Q VG ID  
RS RS
RS
Draw the dc load line by
joining the two points and
VGS 0 VG extend it to intersect the
VGS(off)
curve to get the Q-point.
Q-Point Stability
• The transfer characteristic of a JFET can differ
considerably from one device to another of the
same type.
• This can cause a great variation of the Q-point,
and consequently, ID and VGS.
• With voltage-divider bias, the dependency of ID
on the range of Q-points is reduced (i.e. more
stable) because the slope is less than for self-
bias, although VGS varies quite a bit for both
circuits.
Metal Oxide Semiconductor FET
• The MOSFET differs from the JFET in that it has no pn junction
structure.
• The gate of the MOSFET is insulated from the channel by a
silicon dioxide layer.
• The two basic types of MOSFETs are depletion (D) and
enhancement (E).
• Because of the insulated gate, these devices are sometimes
called IGFETs.
Depletion MOSFET
Drain • n-channel D-MOSFET is
D usually operated in the
SiO2 n depletion mode with VGS
Gate p G < 0 and in the
n enhancement mode
S with VGS > 0.
Channel Symbol
Source • p-channel D-MOSFET
Basic structure of uses the opposite
n-channel D-MOSFET voltage polarity
Depletion/Enhancement MOSFET
• Depletion Mode: negative gate voltage applied to n channel
depletes channel of electrons, thus increasing its resistivity. At
VGS(off), ID = 0, just like n-channel JFET.
• Enhancement mode: when VGS > 0, electrons are attracted
into channel, thus increasing (enhancing) the channel
conductivity.
 Enhancement MOSFET
Drain
Induced RD
SiO2 D Channel
p p
VDD
Gate n G n
p VGG p
S
Symbol
Source

E-MOSFET construction and operation ( p-channel)

Notes On E-MOSFET
• The E-MOSFET operates only in the enhancement mode.
• For a p-channel device, a negative gate voltage above a
threshold value induces a channel by creating a layer of
positive charges in the substrate region adjacent to the SiO2
layer.
• Channel conductivity increases with VGS.
 Rex Jason H. Agustin
“Whatever you ask for in prayer, believe that you have
receive it and it will be yours.”

THE END 99