Electrical Tests on GaN

devices

Giorgio Spiazzi
University of Padova
Dept. of Information Engineering – DEI
 Dynamic circuit test

iL
L

+
DRIVER
DUT CF VCC

Rs

Io(t)

• Goal:
– Simultaneous measurement of device voltage
and current during switching intervals with an
inductive load
 Dynamic circuit test

iL VDS measurement
L

+
DUT CF VCC FR9N20DPBF per clamp da 200V

J2
DRIVER

S M B _ f e m m in a
1
Rs

J3
R 2
Io(t) Q 1
IR L R 3 7 0 5 Z 1

Vpol
2
J1 20
S M B _ m a s c h io
1 C O N N M O D 6 -2 _ J

Vmis D 3 D 1
STPS0520Z 5 .1 V
C 1
10n

D 2 R 1
STPS0520Z 10
 EPC 2015: VDS and IDS

VDC = 20V, IDS = 10A, Vgate = 5V, Ton = 412 s

IDS [2 A/div]

VDS [21 mV/div]

VDS [21 mV/div]

Voltage measured with clamp

circuit and 21:1 coaxial probe
 Dynamic RDSon: EPC 2015 (40 V)

VCC = 20 V, fsw = 5 Hz
1
DYNAMIC RDSon
10

0
10

-1 4 devices


10

-2
10

RDSon = 4 m

-3
10
0 1 2 3 4
Time [s] -4
x 10
 EPC 2010: VDS and IDS
VDC = 160V, IDS = 16A, Vgate = 5V, Ton = 55.8 s. Voltage measured with clamp
circuit and 21:1 coaxial probe

VGS [1 V/div]

IDS [2 A/div]

VDS [105 mV/div]

 Dynamic RDSon : EPC 1010 (200 V)

VCC = 80 V, fsw = 5 Hz
1
DYNAMIC RDSon
10

0
10

4 devices


-1
10

RDSon = 25 m
-2
10
0 1 2 3 4 5 6 7 8
Time [s] -5
x 10
 Dynamic RDSon: EPC 2010_06 (200 V)

VCC = 80-120-160 V, fsw = 5 Hz

1
DYNAMIC RDSon
10

0
10
120 V


4 dispositivi
160 misurati
V
-1
10
80 V

RDSon = 25 m
-2
10
0 1 2 3 4 5 6
Time [s] -5
x 10
 GaN radiation test

Irradiation with 3-MeV protons at

difference fluence (1-4∙1014 p/cm2)

EPC2015 (VDMAX=40V) EPC2010 (VDMAX=200V)

#1  1E14 p/cm2 #5  3E14 p/cm2
#2  2E14 p/cm2 #6  1E14 p/cm2
#6  3E14 p/cm2
#7  4E14 p/cm2
 EPC 2010 #6 (1E14 p/cm2 )

Floating Drain. VGS swept from 0 to -4V and back to zero. Then, from
0 to +4V and back to zero again
2010#6 (Vmax=200V)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
|IGS| (A)

1.0E-06
1.0E-07
pre
1.0E-08
post
1.0E-09
post 7d
1.0E-10 post 1m
1.0E-11
-4 -3 -2 -1 0 1 2 3 4
VGS (V)
 EPC 2010 #6 (1E14 p/cm2 )
Drain connected to a 0.5V voltage generator. Gate voltage swept from 0 to 3V (for
any VGS value a pulsed measurement is taken so as to avoid device heating)

2010#6 (Vmax=200V)
IDS-VGS @ VDS = 0.5V
10 20
IDS pre
IDS post
18
8 IDS post 7d 16
IDS post 1m 14
6 12
|IDS| (A)

gm (S)
gm pre
gm post
10
4 gm post 7d 8
gm post 1m 6
2 4
2
0 0
0 0.5 1 1.5 2 2.5 3
VGS (V)
 EPC 2010 #6 (1E14 p/cm2 )

VGS=3V EPC 2010 #6

IDS-VDS VGS from 1V to 3V step 1V
10
pre
9 post
8
post 7d
7 post 1m
6 VGS=2V
IDS (A)

5
4
3
2 VGS=1V
1
0
0 0.5 1 1.5 2 2.5 3
VDS (V)
EPC 2010 #5 (3E14 p/cm2 )

2010#5 (Vmax=200V)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
|IGS| (A)

1.0E-07
1.0E-08 pre
1.0E-09 post
1.0E-10
post 7d
1.0E-11 post 1m
1.0E-12
-4 -3 -2 -1 0 1 2 3 4
VGS (V)
EPC 2010 #5 (3E14 p/cm2 )

2010#5 (Vmax=200V)
IDS-VGS @ VDS = 0.5V
10 20
IDS pre gm pre
IDS post gm post
18
8 IDS post 7d gm post 7d 16
IDS post 1m gm post 1m 14
6 12
|IDS| (A)

gm (S)
10
4 8
6
2 4
2
0 0
0 0.5 1 1.5 2 2.5 3
VGS (V)
 EPC 2010 #5 (3E14 p/cm2 )

EPC 2010 #5
VGS=3V IDS-VDS VGS from 1V to 3V step 1V
10
9
8
7
6
VGS=2V
IDS (A)

5
pre
4 post
3
post 7d
2 post 1m
VGS=1V
1
0
0 0.5 1 1.5 2 2.5 3
VDS (V)
EPC 2015 #1 (1E14 p/cm2 )

2015#1 (Vmax=40V)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
|IGS| (A)

1.0E-06
1.0E-07
pre
1.0E-08 post
1.0E-09
post 7d
1.0E-10 post 1m
1.0E-11
-4 -3 -2 -1 0 1 2 3 4
VGS (V)
EPC 2015 #1 (1E14 p/cm2 )

2015#1 (Vmax=40V)
IDS-VGS @ VDS = 0.5V
10 20
IDS pre
IDS post
18
8 IDS post 7d 16
IDS post 1m 14
6 12
|IDS| (A)

gm (S)
gm pre
10
gm post
4 gm post 7d 8
gm post 1m 6
2 4
2
0 0
0 0.5 1 1.5 2 2.5 3
VGS (V)
 EPC 2015 #1 (1E14 p/cm2 )

EPC 2015 #1
VGS=3V IDS-VDS VGS from 1V to 3V step 1V
10
pre
9 post
8
post 7d
7 post 1m
6
IDS (A)

5 VGS=2V
4
3
2
1 VGS=1V
0
0 0.5 1 1.5 2 2.5 3
VDS (V)
EPC 2015 #2 (2E14 p/cm2 )

2015#2 (Vmax=40V)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
|IGS| (A)

1.0E-07
1.0E-08 pre
1.0E-09 post
1.0E-10
post 7d
1.0E-11 post 1m
1.0E-12
-4 -3 -2 -1 0 1 2 3 4
VGS (V)
EPC 2015 #2 (2E14 p/cm2 )

2015#2 (Vmax=40V)
IDS-VGS @ VDS = 0.5V
10 20
IDS pre
IDS post
18
8 IDS post 7d 16
IDS post 1m 14
6 12
|IDS| (A)

gm (S)
gm pre
10
gm post
4 gm post 7d 8
gm post 1m 6
2 4
2
0 0
0 0.5 1 1.5 2 2.5 3
VGS (V)
 EPC 2015 #2 (2E14 p/cm2 )

EPC 2015 #2
VGS=3V
IDS-VDS VGS from 1V to 3V step 1V
10
pre
9 post
8
post 7d
7 post 1m
6
IDS (A)

5
VGS=2V
4
3
2 VGS=1V
1
0
0 0.5 1 1.5 2 2.5 3
VDS (V)
 Irradiation results

After irradiation with 3-MeV protons at the

highest fluence (4∙1014 p/cm2), the devices
exhibited an increase of up to one order of
magnitude in gate leakage, almost 1 V of
threshold voltage reduction, degradation of
the subthreshold slope, and drop in
transconductance