GUNN DIODE

TRANSFERRED ELECTRON DEVICE (TED)

 MICROWAVE SEMICONDUCTOR DIODES

GUNN DIODE VARACTOR DIODE CRYSTAL DIODE PIN DIODE

Generation of Frequency Mixing 2 frequencies Signal attenuation,

microwave multiplication, Tuning & detection of switching and
signals and amplification microwave signals modulation
GUNN DIODE
● also known as a transferred electron device
(TED)
● It is a two-terminal passive semiconductor
electronic component, with negative
resistance.
● It is used as low power oscillator at
microwave frequency.
● It is based on the ‘gunn effect’ , discovered
by John Battiscombe "J. B." Gunn in 1963.
● First discovered in GaAs and later observed
in InP, InAs and CdTe.
Working: ‘Gunn Effect’
● The lowest energy conduction band in GaAs is
called primary valley.
● GaAs consists of 6 secondary valleys.
● When a DC voltage is applied, an electric field
(E) is established.
● Measuring current density J as a function of electric field E, in n-
type GaAs after a threshold voltage Vth, current becomes
oscillatory w.r.t, time. This is called as gunn effect.
● These oscillations are in microwave frequency range.
● The region of V-I curve after Vth is called the -ve resistance or -ve
differential conductivity region.
● Vth= 3.2 KV/m for GaAs.
● Considerable heat is generated in the diode, hence it should be
provided with a heat sink (Cu-stud).
● P-type GaAs does not exhibit gunn effect.
Construction Of Gunn Diode
● Gunn diode is a bulk device. Does not
contain any junctions.
● It is a single slice of n-type GaAs.
● GaAs is grown epitaxially onto a Cu or
Au plated Mb electrode.
● Source Material: Tri-methyl gallium
and arsenic
● It is doped with Si, Te or Se to make it
n-type.
● They have metal contacts- anode and
cathode.
● Commercial gunn diodes are
encapsulated in packages.

❏ Substrate - highly doped

❏ Top layer - moderately doped
❏ Middle layer - lightly doped (active layer)

Substrate doping density n = 1.3x10^18 cm-

³. Thickness varies according to the
frequency required.

● GaAs for frequencies up to 200 GHz.

● GaN can reach up to 3 THz.
MODES OF OPERATION

Gunn mode or Transit time mode.

The LSA mode (or limited space charge
accumulation).
GUN MODE (or) TT MODE

o In this mode, voltage V applied the diode so as to set up a electric field

E greater than the threshold field .
o During the process a bunch of electrons called Accumulation layer
starts moving from left to right of the sample .
o The time taken for the accumulation layer to travel the length of the
specimen of GaAs is so less that its reciprocal gives the frequency of
oscillations in the microwave range .
o The time taken for the accumulation layer to travel down the length of
the piece is called Transit-time.
LSA MODE

 For LSA mode of operation , the gunn diode works as a part of a resonant circuit .
 The resonant circuit is tuned to of frequency several times greater than that of the
TT mode so that dipole domains do not have sufficient time to form and the circuit
operates as a negative resistance oscillator when the dc voltage is adjusted to a
value greater than threshold voltage and nearly at the mid-point of the negative
resistance region .
 The resistance load RL is adjusted to a value of above 20% greater than the
maximum negative resistance value of the device to enable oscillations to start
and steady .
 The peak to peak amplitude of the microwave 0scillations is approximately equal
to the voltage range in the negative resistance region .
Quenched domain mode :
If the resonant circuit is tuned to a value slightly above that of the TT mode , the
dipole domain will be quenched before it arrives at the anode by the negative
swing of the oscillations voltage but the gunn diode will operate mostly like gunn
mode . This mode of operation is called quenched domain mode .

Delayed mode :
If the resonator is tuned below that of the gunn mode , the dipole domains will
arrive the at the anode well in time but the formation of a new dipole domain will
be delayed until the oscillation voltage increases above the threshold value . This
type of operating mode is called the delayed mode .
LSA MODE
DIFFERENCES BETWEEN PN JUNCTION AND
GUNN DIODE
P N JUNCTION
 It consists of P & N type
semiconductor material .
 It has P type , N type and depletion
region between these materials.
 Symbol
GUNN DIODE
 It only consists of N type
semiconductor material .
 It has N+ n N+ material. No
depletion region is formed .
 Symbol
Applications
 A Gunn diode can be used to amplify signals because of the apparent "negative
resistance". Gunn diodes are commonly used as a source of high frequency and high
power signals .
 Sensors and measuring Instruments

○ Anti-lock brakes

○ Sensors for monitoring the flow of traffic

○ Distance traveled" recorders

○ Traffic signal controllers

Automatic door openers
Car speed detectors
Sensors to avoid derailment of trains
Radio amateur use
Gun oscillator
Thanks!