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Welcome To IC Mask Design Training: Ankur Agarwal
Welcome To IC Mask Design Training: Ankur Agarwal
Training
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Fabrication Process
2
Agenda
What we want!!!!
Steps involved in the fabrication process
N-Well Process
P-Well Process
Twin Tub Process
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What we want!!!!!
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Lets fabricate this first!!!!!
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Steps involved in the fabrication
process
Crystal Growth
Epitaxial Growth
Film Formation
Lithography
Etching
Impurity Doping
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Crystal Growth
Techniques for
growing single
crystals of Silicon to
form a Wafer.
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General Procedure
S t a r t in g M a t e r ia l
P o ly c r y s t a llin e S e m ic o n d u c t o r
S in g le C r y s t a l
W a fe r
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Single Crystal Silicon growth
Czochralski method
Silicon crystal growth from the Melt
> 90 % of the the semiconductor
industry use this option.
Starting Material : Quartzite – Pure form
of Sand (SiO2)
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Czochralski Method (Contd)
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Czochralski Method (Contd)
Si + 3HCl SiHCl3 + H2
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Czochralski Method (Contd)
SiHCl3 + H2 Si + 3HCl
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Czochralski Method (Contd)
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Czochralski Method (Contd)
Crystal Puller
Three main parts
A furnace – which includes a fused-
silicon (SiO2) crucible , a graphite
susceptor, a rotation mechanism , a
heating element and a power supply
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Czochralski Method (Contd)
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Czochralski Method (Contd)
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Czochralski Method (Contd)
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Material Characterization
Wafer Shaping
Crystal characterization
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Material Characterization (Contd)
Wafer Shaping
- the two ends are removed
- the surface is grinded to to give the
required diameter
- one or more flat regions grounded
along the length of the ingot
- ingots are diamond sawed to give
wafers
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Material Characterization (Contd)
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Material Characterization (Contd)
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Material Characterization (Contd)
Crystal characterization
- Crystal defects
- Material properties
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Material Characterization (Contd)
Crystal Defects
- Point defects
- Line defects
- Area defects
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Material Characterization (Contd)
Material Properties
- Resistivity
- Minority carrier lifetime
- Trace impurities such as oxygen and carbon
- Surface flatness
- Slice Taper
- Slice Bow
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Epitaxial Growth
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Chemical-Vapor Deposition
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Chemical-Vapor Deposition
SiCl4 + Si 2SiCl2
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Chemical-Vapor Deposition
(Contd)
Diborane (B2H6) is used as p-type
dopant
Phospine (PH3) or Arsine (AsH3) is used
for n-type
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Film Formation
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Film Formation (Contd)
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Thermal Oxidation
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Thermal Oxidation (Contd)
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Thermal Oxidation (Contd)
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Dielectric Deposition
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Dielectric Deposition (Contd)
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Silicon Dioxide Deposition
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Silicon Dioxide Deposition (Contd)
For intermediate temperature (500-8000C)
deposition, TetraEthylOrthoSilicate
(Si(OC2H5)4) is decomposed in a LPCVD
Si(OC2H5)4 SiO2 + by-products
For high temperature (9000C) deposition,
SiO2 is deposited by reacting DiChloroSilane
(SiCl2H2) with Nitrous oxide (N2O)
SiCl2H2 + 2N2O SiO2 + 2N2 +2HCl
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Silicon Nitride Deposition
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Silicon Nitride Deposition (Contd)
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PolySilicon Deposition
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Metallization
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Metallization (Contd)
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Chemical-Mechanical Polishing
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Lithography
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Optical Lithography
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The Clean Room
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The Clean Room (Contd)
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Exposure Tools
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Exposure Tools (Contd)
Resolution – is the minimum feature dimension
that can be transferred with high fidelity to a
resist film on a semiconductor wafer
Registration – is a measure of how accurately
patterns on successive masks can be aligned (or
overlaid) with respect to the previously defined
patterns on wafer
Throughput – is the number of wafers that can
be exposed per hour for a given mask level
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Exposure Tools (Contd)
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Exposure Tools (Contd)
Shadow printing
- Contact printing – The mask and
the wafer are in direct contact
- Proximity printing - The mask and
the wafer are in close proximity
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Exposure Tools (Contd)
Projection printing
- The mask patterns are projected on to the
resisted-coated wafer many centimeters away
form the mask
- To increase resolution only a small portion
of the mask is exposed at a time and the area
is scanned or stepped over the wafer to cover
the entire surface
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Exposure Tools (Contd)
Four methods
- Annual-field wafer scan
- 1:1 Step-and-Repeat
- M:1 reduction step-and-repeat
- M:1 reduction step-and-scan
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Exposure Tools (Contd)
Ultraviolet source
- High-pressure mercury-arc lamp is
widely used – 436nm – 0.3µm
- KrF excimer laser – 248nm – 0.18µm
- ArF excimer laser – 193nm – 0.10µm
- F2 excimer laser – 157nm – 0.07µm
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Masks
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Masks (Contd)
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Masks (Contd)
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Photoresist
A radiation-sensitive compound
Types
- Positive resists – The exposed region
becomes more soluble and can be removed
of more easily during development. The
pattern formed is same as on the mask
- Negative resists – The exposed regions
become less soluble and the pattern formed
is the reverse of that on the mask
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Photoresist (Contd)
Positive resist
- Consists of a photosensitive compound, a
base resin and an organic solvent
- Prior to exposure the photosensitive
compound is insoluble in the developer
solution. After exposure, the photosensitive
compound absorbs the radiations, changes its
chemical structure and becomes soluble in
the developer solution
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Photoresist (Contd)
Negative resist
- Consists of polymers combined with a
photosensitive compound
- After exposure, the photosensitive
compound absorbs the optical energy and
converts it into chemical energy to initiate a
polymer linking reaction. These cross-linked
polymers become insoluble in the developer
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Etching
Cleaning of the wafer to remove contamination
that results from handling and storing and also
for selective removal of certain portion of the
deposited material on a wafer
The material to be removed can be the
contamination, insulating layer, the photoresist,
the metal layers et al
Two methods are :
- Wet Chemical etching
- Dry or Plasma Etching
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Wet Chemical Etching
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Wet Chemical Etching (Contd)
Silicon Etching
- First the silicon is oxidized using Nitric acid in
water or acetic acid (CH3COOH)
Si + 4NHO3 SiO2 + 2H2O + 4NO2
- HydroFluoric acid is used to dissolve the SiO2
layer
SiO2 + 6HF H2 SiF6 + 2H2O
Polysilicon etching is similar to Si etching except
the rate of etching is faster and hence need to be
controlled precisely
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Wet Chemical Etching (Contd)
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Wet Chemical Etching (Contd)
Aluminum Etching
- Etched using heated solutions of
Phosphoric acid, Nitric acid, acetic acid
and DI water
- Nitric acid (HNO3) oxidizes the
aluminum and then the oxide is
dissolved in Phosphoric acid (H3PO4)
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Dry or Plasma Etching
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Plasma Etching (Contd)
Plasma Etching process takes place in 5 steps
- The etchant species is generated in plasma
- The reactant is then transported by diffusion
through the stagnant gas layer to the surface
- The reactant is absorbed on the surface
- Chemical reaction takes place to form a volatile
compound
- The compounds are desorbed in from the
surface, diffused into the bulk gas and pumped
out of the system
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Plasma Etching (Contd)
Two methods
- Physical Method
Positive Ions bombard the surface at
high velocity
- Chemical Method
Neutral reactive species generated
by the plasma interact with the material
surface to form volatile products
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Impurity Doping
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Diffusion
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Open tube diffusion system
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Open tube diffusion system (Contd)
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Ion Implantation
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Medium-Energy Ion Implantor
Ion source has a heated filament to break up the
source gas like BF3 or AsH3 (B+ or As+).
An external voltage causes the charged ions to move
out of the ion-source chamber into a mass analyzer
Mass analyzer filters out ions other then those with
the required mass-to-charge ratio
The selected ions are then accelerated using high
voltage source
Using electrostatic deflection plates the ion is
scanned over the wafer
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