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Ionic Solids & Ionic Bonding
Ionic Solids & Ionic Bonding
• 2. Anion formation: X + e X-
• High electron affinity, high electronegetivity
& few vacancies in valence shell.
• Favourable conditions to form Ionic Bond:
• E.N >= 2
• C.N.8:
Calculation of Limiting Radius Ratios
• Simple geometric calculations allow working out limiting r. r.
• Thus for C.N.=6 (see diagram)
• AB= a = r- + r- = 2r- ; AC= d = 2r- + 2r+
• Using Pythagoras’ theorem,
• AC2 = AB2 + BC2 = 2 a2 .
• So AC = d = (2)1/2 a
• Also, AC = 2r- + 2r+ and a = 2r-
• Thus, 2r- + 2r+ = (2)1/2 . 2r-,
• Or r- + r+ = (2)1/2 . r- ; dividing by r-
• r- + r+ / r- = (2)1/2
• Rearranging,
• r+ / r- = (2)1/2 – 1 = 0.414.
• This is the lower limit of r+/ r- for close packing with C.N.6.
• The upper limit of r+/ r- for C.N.6 is the lower limit of C.N. 8.
• It is 0.732
• a
Limiting Radius Ratios & structures
2RA
rc + RA
a 2 RA 2 rc RA
rc RA
2
2
2RA RA 2
rc
2 1 0.414
RA
Cubic Coordination: CN = 8
2 RA a
2( RA rc ) 3a
a 2(rc + RA) rc RA 3
RA
rc
3 1 0.732
RA
2RA
Rock salt (NaCl(s) ) structure
• For more than two ( a pair) ions, Eattr depends upon number
of ions and also their arrangement (type of crystal lattice).
Obtaining Born – Lande Equation……
• Or at equilibrium:
• Rearranging 5:
• = - 766376 J/mol
• = - 766 kJ/mol
U for CaO
• F- Cl- Br- I-
• Li+ 1036 853 807 757
• Na+ 923 787 747 704
• K+ 821 715 682 649
• Rb+ 785 689 660 630
• Cs+ 740 659 631 604
• Na+ 2481
• Mg 2+ 3791
• Al 3+ 15,916
• Effect of ionic size
• As the ionic radius of both Mn+ and Xn- increases, the lattice energy
decreases. The attractive force between the ions decreases and
they become easier to separate.
• e.g. LiBr 804 kJ mol-1 BeCl2 2983 kJ mol-1
• Enthalpy of solution:
• Insulators Semiconductors
Conduction by Semiconductors
• Small energy gap (band gap), ΔE between VB & CB.
Thermal excitation makes electrons flow from V.B to
C.B. This causes conduction.
n-type semiconductor
• Doping Si with P or other element from 5th group, gives a
n-type semiconductor.
• P has an extra electron. Since the V.B. of Si is full , this
electron must go to higher energy C.B.
• These electrons now occupy a partially-filled C.B. and
can move easily between the orbitals of this band. Thus
enhance conductivity.
• Since extra electrons than in pure Si, this is n-type
semiconductor (n is for negative).
p-type semiconductor