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  • 180nm Process Typical Parameter Values

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    Ku Ble Yan
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    This document discusses MOS parameters for modeling transistors in a 1.8um technology process. It contains information on typical values for modeling the saturation region of transistors as well as important SPICE parameters for modeling diodes in a 1.8um process. The document focuses on providing MOS parameters needed for accurate modeling of transistors in a 1.8um technology node.

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    180nm process typical parameter values

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    This document discusses MOS parameters for modeling transistors in a 1.8um technology process. It contains information on typical values for modeling the saturation region of transistors as well as important SPICE parameters for modeling diodes in a 1.8um process. The document focuses on providing MOS parameters needed for accurate modeling of transistors in a 1.8um technology node.

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    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
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    64 views6 pages

    180nm Process Typical Parameter Values

    Uploaded by

    Ku Ble Yan
    This document discusses MOS parameters for modeling transistors in a 1.8um technology process. It contains information on typical values for modeling the saturation region of transistors as well as important SPICE parameters for modeling diodes in a 1.8um process. The document focuses on providing MOS parameters needed for accurate modeling of transistors in a 1.8um technology node.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pptx, pdf, or txt
    of 6

    Small-Signal Model for Saturation Region

    Typical Values for 1.8um Process


    Important SPICE Parameters for Modeling
    Diodes
    MOS Parameters for a Typical 1.8um Technology
    MOS Parameters for a Typical 1.8um Technology
    MOS Parameters for a Typical 1.8um Technology

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