Presentation On Second Order

Effects and Short Channel effects

Contents

 Second order effects and short channel effects.

Second order effects

Effects due to parameters, concentration of doping, oxide t

hickness, channel length variation, high electric field intens
ity inside the device channel, oxide breakdown, avalanche
breakdown of the pn regions inside the MOS transistors co
mes under second order effects.
Second Order Effects
 Subthreshold leakage current
 Body Effect
 Channel length modulation
 DIBL(Drain induced barrier lowering)
 Hot carrier injection
 Impact ionization
 Avalanche breakdown
 Velocity saturation (mobility degradation)
 Surface scattering
 Punch through
 Gate Induced Drain Leakage
Subthreshold leakage current
 The current between source and drain of a mosfet, when th
e transistor is in the weak inversion region, i.e for gate to sour
ce voltages below the threshold voltage is called subthreshold
leakage current.
 In lower channel devices, due to space between source an
d drain is less, there is more drift current flows under the gate
. Gradually this subthreshold current will increase.
 And it is inversely proportional to channel length and prop
ortional to the drain voltage and temperature.
Subthreshold leakage current
Body Effect
 Channel length modulation
In mosfet, at pinch off region, drain curr
ent depends on the more electrical field and
also depends on the depletion region where
it opposes the drain current. Since depletion
region increases, we should have a constant
current if Vds increases. But if we comes to
lower channel devices, where electric field
due to drain voltage dominates the depletio
n width opposition current, so more drain c
urrent flows. This we called as channel leng
th modulation effect. The channel length m
odulation factor is lambda and it is inversel
y proportional to channel length. Channel lenght modulation
 DIBL(Drain induced barrier lowering)
When drain voltage is more than bulk potentials, due to its r
everse biased depletion region, it occupies some part of space in c
hannel. So we need little less gate voltage required to invert the re
maining channel to turn mosfet ON. So Vt is decreased.
This effect can be reduced by changing doping concentrati
on of either bulk or drain. And by inserting a low doped n material
before the drain.
 Hot carrier injection
This effect occurs when more drain voltage in short channel dev
ices. More drain voltage generates the more electic field so that it a
ttracts the more electrons from the source and those electrons will r
each its maximum velocity and it gets more kinetic energy. The el
ectron which gets more kinetic energy called as hot electron. This
hot electron collide at the edge of the drain or gate and reflect back
and damages the gate oxide which is near to the drain region. If gat
e oxide damages then direct current flows from gate to substrate. T
his iscalled as hot carrier injection.
This can be avioded by using increasing the gate oxide thickness
or using high k-materials as a gate oxide. And inserting a low dope
d n material before the drain.
 Impact Ionization

This effect is related to hot carrier effect. T

he hot electron which is reflected from drain
also breaks the covalent bonds in depletion re
gion. If covalent bond breaks then one electr
on and one hole will be generated. If more co
valent bond breaks, more free electrons will
be collected by drain. Therefore extra unwant
ed current Ids flows from source to drain thro
ugh substrate . This is called impact ionizatio
n effect. If we able to control or decrease the
hot carrier effect, impact ionization effect al
so decreases.
 Avalanche Breakdown
As the electric field in the channel is increased, avalanche breakdown occurs in th
e channel at the drain. This avalanche breakdown increases the current as in a p-n di
ode. There is parasitic bipolar action taking place. Holes generated by the avalanche
breakdown move from drain to source underneath the inversion layer. This hole curr
ent forward biases the source-bulk p-n diodes so that now also electrons are injecte
d as minority carriers into the p-type substrate underneath the inversion layer. Thes
e electron-hole pairs through avalanche multiplication. The positive feedback betwe
en and the parasitic bipolar action results in breakdown at lower drain voltage.
As if we control hot carrier effect the avalanche breakdown can be avoided.
 Velocity Saturation and mobility degradation
The electron velocity is related to the electric field through the
mobility. For higher fields the velocity doesnot increase with ele
ctric field, we have a degradation of mobility because of scatteri
ng by vertical field. This leads to earlier saturation of current i.e
before Vgs-Vth. Nothing but reduction in drain current.
The velocity saturation reduces the transconductance of short c
hannel devices in the saturation condition.
By using k-materials as gate this can be avoided
Velocity saturation
Surface Scattering
When the carriers travel along th
e channel, they are attracted to the
surface by the electric field create
d by the gate voltage. As a result,
they keep crashing and bouncing a
gainst the surface, during their tra
vel, following a zigzag path. This
effectively reduces the surface mo
bility of the carriers. This change i
n carrier mobility impacts the curr
ent-voltage relationship of the tran
sistor.
 Drain Punch Through
 If Vds is goes on increasing, due to r
everse biased pn junction at drain, it will
have a significant widths of depletion re
gion.
 Since the gap between the source and
drain is very less, the depletion region o
f drain will touch with the source depleti
on region.
 If this happen once, the drain current
between source and drain can't be contro
l by the gate
By changing doping concentration of
drain or bulk punch through can be avoi
ded
Gate Induced Drain Leakage
 This issues comes only at gate voltage less than 0(let’s take
for Nmos) and more drain voltage.
 Basically there is reverse saturation current flows between
the drain and bulk (P) and it is very minor.
 When –ve gate voltage has applied (assume due to noise), it
attracts the holes (due to accumulation) and forms the p
channel (or P+) between the source and drain. At this case,
the thinner depletion region will form between the
generated P+ region and drain (N+). So Compare to P.N+
reverse saturation current, P+.N+ reverse saturation current
is more and it is considerable leakage current. This leakage
we call it as Gate induced drain leakage
Conclusion

The second order effects complicates device operation and de

grade device performance, these effects can be eliminated or
minimized in SOI and FINFET technology by its different co
nstruction.
References
• https://www.allaboutcircuits.com/technical-articles/mosfe
t-channel-length-modulation/
• http://www.onmyphd.com/?p=mosfet.short.channel.effects
• http://www.iue.tuwien.ac.at/phd/gehring/node83.html
• http://www.iue.tuwien.ac.at/phd/stockinger/node16.html
• https://en.m.wikipedia.org/wiki/Short-channel_effect