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    Latchup refers to a short circuit formed between the power and ground rails in an integrated circuit (IC) due to the interaction of parasitic bipolar junction transistors. This causes excessive current flow that can permanently damage the IC. Various techniques can help prevent latchup, including guard rings, well tap cells, trench isolation, epitaxial layers, retrograde well doping, fully depleted silicon-on-insulator (FDSOI) technology, and ESD protection circuits. Guard rings work by collecting minority carriers to avoid the activation of parasitic bipolar junction transistors.

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    37 views15 pages
    Latchup refers to a short circuit formed between the power and ground rails in an integrated circuit (IC) due to the interaction of parasitic bipolar junction transistors. This causes excessive current flow that can permanently damage the IC. Various techniques can help prevent latchup, including guard rings, well tap cells, trench isolation, epitaxial layers, retrograde well doping, fully depleted silicon-on-insulator (FDSOI) technology, and ESD protection circuits. Guard rings work by collecting minority carriers to avoid the activation of parasitic bipolar junction transistors.

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    Latchup refers to a short circuit formed between the power and ground rails in an integrated circuit (IC) due to the interaction of parasitic bipolar junction transistors. This causes excessive current flow that can permanently damage the IC. Various techniques can help prevent latchup, including guard rings, well tap cells, trench isolation, epitaxial layers, retrograde well doping, fully depleted silicon-on-insulator (FDSOI) technology, and ESD protection circuits. Guard rings work by collecting minority carriers to avoid the activation of parasitic bipolar junction transistors.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pptx, pdf, or txt
    37 views15 pages

    We Can Prove Success Through Quality Service

    Uploaded by

    srajece
    Latchup refers to a short circuit formed between the power and ground rails in an integrated circuit (IC) due to the interaction of parasitic bipolar junction transistors. This causes excessive current flow that can permanently damage the IC. Various techniques can help prevent latchup, including guard rings, well tap cells, trench isolation, epitaxial layers, retrograde well doping, fully depleted silicon-on-insulator (FDSOI) technology, and ESD protection circuits. Guard rings work by collecting minority carriers to avoid the activation of parasitic bipolar junction transistors.

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    LATCH-UP

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    What is Latchup?
    • Latchup refers to short circuit formed between power and
    ground rails in an IC leading to high current and damage to
    the IC.
    • In CMOS transistors, latch up is the phenomenon of low
    impedance path between power rail and ground rail due to
    interaction between parasitic pnp and npn transistors.
    • Why?
    • This causes excessive current flows and potential permanent
    damage to the devices.

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    Latchup formation

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    Latchup formation

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    PNPN device

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    Latchup
    SCR may triggered by various ways:
    1. Noise in Output voltage
    2. An Electrostatic Discharge event
    3. Ionizing radiations

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    Latchup Prevention Techniques
    1. Guard ring
    2. Well tap cells
    3. Isolation trench
    4. Epitaxial layer
    5. Retrograde well doping
    6. Combination of Epi layer and Retrograde well doping
    7. FDSOI Technology
    8. ESD Protection Circuit

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    Guard ring
    1. It provides a better way to collect the minority carriers
    2. Guard ring consist of a P+ ring on P substrate and N+ ring on Nwell all
    around the nMOS and pMOS
    3. These rings contains as many as contacts as per design rules
    4. N+ rings connected to VDD and P+ ring connected to GND
    5. These rings will collect the minority carriers and avoid the
    development of potential difference between body and source which
    activates the BJTS

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    Guard ring

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    Well Tap Cells

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    Well Tap Cells Placement

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    Oxide Trench Isolation
    • Isolate the nMOS and pMOS using oxide trench and buried
    oxide

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    Epitaxial Layer

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    SOI Technology

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