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Lect 2,3 - Introduction To Electronic Circuits
Lect 2,3 - Introduction To Electronic Circuits
n-Channel JFET
FET JFET p-Channel
JFET
MOSFET (IGFET)
Enhancement Depletion
MOSFET
MOSFET
(Classification of MOSFET)
FET Vs BJT
Few important advantages of FET over conventional Transistors
1. Unipolar device: operation depends on only one type of charge carriers
(h or e)
2. Voltage controlled Device (gate voltage controls drain current)
3. Very high input impedance (109-1012 )
4. Source and drain are interchangeable in most Low-frequency
applications
5. Low Voltage Low Current Operation is possible (Low-power
consumption)
6. Less Noisy as Compared to BJT
7. No minority carrier storage (Turn off is faster)
8. Self limiting device.
9. Very small in size, occupies very small space in ICs
10. Low voltage low current operation is possible in MOSFETS.
Introduction to
JFET
• Unipolar device (one polarity of charge
carrier)
• Voltage controlled (gate voltage controls
drain current)
• High input impedance (109-1012 )
• No minority carrier storage
• Source and drain are interchangeable in
most low-frequency applications
JFET : SYMBOLS
Drain
Drain
Gate
Gate
Source
Source
There are three terminals: Drain (D) and Source (S) are connected to n-
channel Gate (G) is connected to the p-type material
JFET Operating Characteristics
There are three basic operating conditions for a JFET:
Figure: The nonconductive depletion region becomes broader with increased reverse
bias. (Note: The two gate regions of each FET are connected to each other.)
Output or Drain (VD-ID) Characteristics of n-
JFET
Figure: Circuit for drain characteristics of the n-channel JFET and its Drain
characteristics.
Non-saturation (Ohmic) V V
DS GS P
Region:
2 I V 2
The drain current is given I DSS
2 V V V
DS
DS
2
D V P
by P
GS
V
Saturation (or Pinchoff) V
Region: V DS GS P
I V 2
I DSS V
2
V
V GS and I I 1
D V 2 P GS
P D V
P
Where, IDSS is the short circuit drain current, VPis the pinch
DSS off
voltage
Simple Operation and Break down of n-Channel
JFET
Break Down
Region
Transfer (Mutual) Characteristics of n-Channel JFET
V 2 IDSS
I I 1
DS DSS VGS
P
VGS (off)=VP