BJT

By: Mohit Goel

The emitter of the transistor is doped
a. heavily
b. lightly
c. moderately
d. none of these
Answer: A
The silicon transistor are more widely used than germanium transistors because
a. they have smaller leakage current
b. they have better ability to dissipate heat
c. they have smaller depletion layer
d. they have larger current carrying capacity
Answer: A
The dc current gain in common base configuration is given by
(a) α
(b) β
(c) β + 1
(d) α + 1
Answer: A
The dc current gain in common collector configuration is given
by
(a) α
(b) β
(c) β + 1
(d) α + 1
 
Answer:C
In a bipolar junction transistor the base region is made very thin so that
a. recombination in base region is minimum
b. electric field gradient in base is high
c. base can be easily fabricated s
d. base can be easily biased
Answer: A
For transistor action
a. the base region must be very thin and lightly doped.
b. the emitter junction must be forward biased and collector junction should be reverse biased.
c. the emitter should be heavily doped to supply the required amount of majority carriers.
d. all of these.
Answer: D
In which mode of BJT operation are both junction forward biased
a. active
b. saturation
c. cut off
d. reverse active
Answer: B
In which mode of BJT operation emitter - base junction is forward biased and collector base junction
is reverse biased.
a. active
b. saturation
c. cut off
d. reverse active

Answer: A
The set of characteristics of BJT that enables α to be directly determined from slope is:
a) Common emitter output characteristics
b) Common emitter transfer characteristics
c) Common base output characteristics
d) Common base transfer characteristics

Answer: D
What is value of βdc if IB = 50µA and Ic = 3.65mA.

a) 73
b) 74
c) 0
d) 80

Answer: A
What is value of IE if IB = 50µA and Ic = 3.65mA.

a) 53.65 mA
b) 3.70 mA
c) 46.35 mA
d) 80 mA

Answer: A
In a transistor as an amplifier, the reverse saturation current:
a) Doubles for every C rise in temperature
b) Doubles for every 100 C rise in temperature
c) Decreases linearly with temperature
d) Increase linearly with temperature

Answer: B
Magnitude of common base gain ‘α’ is ..
a) <1
b) >1
c) 0
d) None of above

Answer: A
When a emitter base junction of a Si BJT is forward biased, what is V BE for a C-E configuration?

a) voltage-divider bias
b) 0.4 V
c) 0.7 V
d) emitter voltage

Answer: C
Answer: D
Answer: B
Answer: B