PECVD

Texturization

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 Content
1. Solar cell Manufacturing Process 03

2. Safety 05
3. Texturing
• Purpose 06
• Machine overview 11
• Process 16
• Work Activity 22
• Critical Parameters 25
• Defects 28
• SPC 34

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Solar Cell Line Process Flow

Intex Diffusion PSG PECVD

Printers Fast firing Tester Sorter

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Crystalline Silicon Solar Cell Manufacturing
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Texturing –Purpose !!!

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Texturing - Purpose

 Saw damage Removal

• Wire sawing is used to cut silicon ingots
into wafers.

• This process induces small cracks

penetrating the wafer surface.

• Acid-Texturing used for saw damage

removal and makes surface rough.

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 Texturing - Purpose
 Saw damage removal
 Reduce reflection  ~35% to ~ 25 % (second chance of absorption)

Light
Light Reflection ~ 25
Reflection ~ %
Sun
Sun
35 %

Non-Textured Si wafer Textured Si wafer

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Texturing - Purpose
 Saw damage removal
 Reduce reflection
 More radiations Trapping.
 Improved collection probability of carriers(generation of electron-hole pair)

Sun
Sun

longer optical path Improved collection probabilit

h e

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MACHINE –Overview !!!

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Machine Overview

Texturing
Wafer Carrier
Wafer Loader Process Unloader

Chemical
Treatment

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Texturing- Machine Overview. INTEX Loader

 Camera Inspection
• Breakage
• Wafer thickness
• Wafer Contour/size Wafers

 Cassette Loading

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Texturing- Machine Overview INTEX Machine

 Wafers process through Different Chemical Bath

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Texturing- Process Sequence

• HF • HF
• KOH Hot Textured
Wafer • HNO3 DI • DI DI • HCL DI Wafer
• DI • DI Air

Load Wafer in Porous Si Contamination Unloading

Etching Rinsing Rinsing Rinsing Drying
Carrier Removal Cleaning In carrier

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Texturing- Machine Overview INTEX Un-Loader

 Inspection Tool
• Breakage checked by Camera
• Reflectivity measurement by Reflectometer
 Load empty Carriers & Wafers Filled carriers Unloading

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Texturing –Process

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Texturing- Process
Texturing of Si wafer in HF+HNO3+DI
 Si Wafers pass through Chemical Bath (HF+HNO3+DI), which Causes Etching (Si
removal).
 The bottom side of wafer is etched better and darker  Sunny side.
 Standard parameters that maintain in etch bath.
Vol HF:HNO3  ~1:4

Temperature  ~7-12oc
Conveyor speed  ~1-2 m/min

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 Texturing- Process

Chemical Reactions
 Oxidation of Si with HNO3
Si +4HNO3  SiO2 + 4NO2(gas) + 2H2O
 Etching of SiO2 with HF
SiO2+ 4HF  SiF4 + 2H2O

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Texturing- Process

 Oxidation determines the etching.

 Oxidation of Si with HNO3
Si + 4HNO3  SiO2 + 4NO2 + 2 H2O Slow Reaction
2NO2 + H2O  HNO2 + HNO3
Si + 4HNO2  SiO2 + 4NO + 2 H2O Fast Reaction

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Texturing- Process

Etching of Porous-Si in KOH+DI

 Porous Silicon is created in Etch Bath , porous-Si reduce solar cell efficiency.
 Concentration of KOH must not be too low  porous-Si not etched
 Temperature of KOH bath must not be too high  texture is etched
 Standard parameters
KOH  ~ 5% by Volume
 KOH contains lot of impurities

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Texturing- Process

Cleaning in HF+HCL+DI
 Concentration must not be too low  Insufficient cleaning
 Standard parameters
Conc. HF, HCL  ~ 5%, 10% by Volume

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Texturing –Work Activity!!!

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Texturing- Work Activity
Visual check
 At Loader check for rejections (TTV, Breakage, Sawmark).
 At Unloader check for Breakage and Rejection.
Alarms
 Alarms of the machines should be monitored and informed to tool

Incharge.

Operation Control
 Load the wafers filled magazine in input of Loader.
 Measure the wafer weight before and after the
texture to determine the etch depth.

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Texturing- Work Activity
 Monitor the wafers transport in the
machine to avoid the jam in the bath.

 Maintain the throughput as per requirement/instructions given by line Incharge.

 Control the breakages and rejections in machines.
 Breakage Types that can be generated during Loading/Un-loading and in machine
operation.

Micro-crack Corner Breakage Chipping

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Texturing –Critical Parameters!!!

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Texturing- Critical Parameters
Critical parameter: Etch Depth should be monitored and controlled.
• When etched too little  No saw damage removal
• When etched too high  Reflection higher
25 8.8
Reflectivity
Isc
24 8.6

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8.4

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Reflectivity 

8.2

Isc 
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8
20

7.8
19

18 7.6

17 7.4
2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1

Etch Depth 

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Texturing- Critical Parameters
Tool Based parameters
Etch Rate Control
• Temperature
Temperature high  Etching Increases.
• Transport Speed
Transport Speed Increases  Etching Decreases
• Chemical concentration
Chemical Concentration Increases  Etching Increases
Chemical Concentration decrease  Etching decreases

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Texturing –Defects!!!

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Texturing- Defects

Defects

Over Etching Chemical Mark Hand-Touch Roller Mark

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Texturing- Defects

1. Over-Etching

Causes :- Over-etch

• Wafer Jam due to Gear issue

• Roller Speed too Low
• Chemical concentration High

Remedies:-
• Visually Check Roller
• Verify Roller Speed
Ok Textured
• Verify chemical concentration.

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Texturing- Defects

2. Chemical Mark

Causes :- Chemical Mark

• Improper Cleaning
• Wafer Jam
Remedies:-
• Check DI Spray
• Check Breakage
Ok Textured

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Texturing- Defects

3. Hand-Touch

Causes :- Hand-Touch
• Handling Problem

Remedies:-
• Follow Proper Procedure for Handling

Ok Textured

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Texturing- Defects

4. Roller-mark

Causes :- Roller Mark

• Roller cleaning issue

Remedies:-
• Clean Roller

Ok Textured

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Texturing –SPC!!!

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Texturing- Etch Depth Control
In t e x Et c h De p t h Con t rol
Wafer Intial Wt. Final Wt. Removal Temp. Dosing
S.No. Date Shift Etch Depth Remark
Type (gm) (gm) (mg) (celsius) HF HNO3

Etch Depth

Etch Depth=(Initial Wt. – Final Wt.)/ Si density* area

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Any Question ????..

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Thank You

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