semiconductors

Optical communication:
13. Semiconductors

Prof. Dr. V. Brückner

e-mail: v.brueckner@hotmail.de
© Brückner, Kigali 2018
 semiconductors

Semiconductors: outline

2. Semiconductors
2.1. Crystal structures in semiconductors
2.2. Band structure in semiconductors
2.3. Electrons and holes in semiconductors
2.4. Mixing of semiconductors
2.5. Recombination in semiconductors
2.6. p-n junction, LED

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 semiconductors

2. Semiconductors

2.1. Crystal structures in semiconductors

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 semiconductors

Amorphous and crystalline structures

in semiconductors

Silicon:

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in corner (8) 2.1 crystal structure

in face (6)
in volume (4) 1 Å = 10-10 m = 0.1 nm

Diamant grating
e.g. Ge g = 5.66 Å
Si g = 5.43 Å

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 semiconductors

in corner (8) 2.1 crystal structure in corner (As,8)

in face (6) in face (As,6)
in volume (4) in volume (Ga,4)

g g

Zinc blende grating

Diamant grating e.g. GaAs g = 5.64 Å
e.g. Ge g = 5.66 Å GaP g = 5.45 Å
Si g = 5.43 Å AlAs g = 5.66 Å
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InP g = 5.87 Å
 semiconductors
0D, 1D, 2D and 3D crystal structure

basics: cube

g
g = 5 - 6 Å = 0.5 – 0.6 nm 0 Dimensional structure (3D
1
2
3 (2D
(1D
(0D = volume)
quantum wire)
layer)
dot)

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 semiconductors

2. Semiconductors

2.2. Band structure in semiconductors (3D)

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 semiconductors
2.2 Band structure in semiconductors

energy Е(eV)
Conduction band c

Valence band v quasipulse k

GaAs
direct transition
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 semiconductors
2.2 Band structure in semiconductors

energy Е(eV)
Conduction band c

Valence band v
quasipulse k
GaAs AlAs
direct transition indirect transition
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 semiconductors
2.2 Band structure in semiconductors

examples
semicond. Eg (eV) g (µm) direct/indirect
conduction band c
GaAs 1.424 0.871 direct
InP 1.351 0.918 direct
InAs 0.360 3.444 direct
energy gap, Eg InSb 0.172 7.208 direct

Si 1.12 1.107 indirect

Ge 0.66 1.878 indirect
valence band v GaP 2.261 0.548 indirect
AlAs 2.163 0.573 indirect

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 semiconductors

2. Semiconductors
2.3. Electrons and holes in semiconductors

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 semiconductors
2.3 Electrons and holes
examples:
Transmitter/Receiver Conduction band c
GaAs
AlGaAs
GaAsP „empty“
InGaAsP

Receivers only
Si
Ge - - - - -
„occupied“ electrons
Valence band v

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 semiconductors
2.3 Electrons and holes
examples:
Transmitter/Receiver Conduction band c
GaAs
AlGaAs Nc
GaAsP „empty“
InGaAsP
Eg e.g.: Eg = 2 eV
N c = N v exp(- )
kT kT300 = 1/40 eV
Receivers only
Nc = Nv exp(-80)  0
Si
Ge - - - - - Nv
„occupied“ electrons
Valence band v

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 semiconductors

2. Semiconductors
2.4. Mixing of semiconductors

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 semiconductors
2.4. Mixing of semiconductors

examples
semicond. Eg (eV) g (µm) direct/indirect
Conduction band c
GaAs 1.424 0.871 direct
InP 1.351 0.918 direct
InAs 0.360 3.444 direct
Energy gap, Eg InSb 0.172 7.208 direct

Si 1.12 1.107 indirect

Ge 0.66 1.878 indirect
Valence band v GaP 2.261 0.548 indirect
AlAs 2.163 0.573 indirect

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 semiconductors
2.4. Mixing of semiconductors

examples:
InAs + AlAs -> Inx Al1-x As (InAlAs)
GaAs + InAs -> GaxIn1-x As (GaInAs)
GaAs + InP -> InxGa1-x AsyP1-y (InGaAsP)

Conditions for growing mixed semiconductors:

growth of crystalline structures on crystalline substrat
Mix for selected wavelength λ,
i.e. with a certain energy gap Еg
Coincidence of grating constants g !!!!!!
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 semiconductors
2.4. Mixing of semiconductors
energy (eV) wavelength (µm)

W 
g

1st opt. window

Еg

2nd opt. window

3rd opt. window

Direct transition
Indirect transition

g
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 semiconductors
2.4. Mixing of semiconductors
Mix: GaAs + AlAs -> AlGaAs on substrate GaAs 

W 
g
AlGaAs
on GaAs
1st opt. window
Еg

2nd opt. window

3rd opt. window

Direct transition
Indirect transition

g
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 semiconductors
2.4. Mixing of semiconductors
Mix : GaAs + InAs -> InGaAs on substrate??? 

W 
g
AlGaAs
on GaAs
1st opt. window
Еg
InGaAs 2nd opt. window
on ??? 3rd opt. window

Direct transition
Indirect transition

g
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 semiconductors
2.4. Mixing of semiconductors
Mix : AlAs + InAs -> InAlAs on substrate??? 

W 
g InAlAs
on ???

1st opt. window

Еg

2nd opt. window

3rd opt. window

Direct transition
Indirect transition

g
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 semiconductors
2.4. Mixing of semiconductors
Mix: x.In0.53Ga0.47As + (1-x).InP -> In1-x Gax Asy P1-y
substrate InP
W 
g

1st opt. window

Еg In1-x Gax Asy P1-y

2nd opt. window

3rd opt. window

Direct transition substrate:

Indirect transition InP

g
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 semiconductors
2.4. Mixing of semiconductors
Mix: x.In0.53Ga0.47As + (1-x). In0.52Al0.48As -> In1-x-y Gax Aly As
substrate: InP
W 
g

In1-x-y Gax Aly As 1st opt. window

Еg

2nd opt. window

3rd opt. window

Direct transition
Indirect transition

g
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2. Semiconductors
2.5. Recombination in semiconductors

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 semiconductors
2.5. Recombination
linear recombination
Example:
conduction band c

- - - - - - - - - - - - - - -
-
absorption center t
 lin = 10 ms ... 10 ps
 lin
NC  e crystaline...amorphe

valence band v
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 semiconductors
2.5. Recombination
quadratic recombination

conduction band c

- - - - - - - - - - - - - - -
N0 electrons N0
N=
1
1
 BN t 0t Light hf=hc/ 1
 quadr =
 quadr B N0
+ + + + + + + + + + + + + + +
valence band v
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 semiconductors
2.5. Recombination
quadratic recombination

Example:

-- -- -- -- -- -- -- -- -- -- -- -- -- -- --
N0 dopands N0
N=
1  BN 0 t Light hf=hc/ 1
 quadr =
B = 0.3 ... 2 10-10 cm3 s-1 B N0
+ + + +- + + + + + + + + + + +

N0 = 1017 cm-3 N0 = 1018 cm-3 N0 = 1019 cm-3

© Brückner,
=300 Kigali... 50 ns
2018  =30 ... 5 ns  =3 ... 0.5 ns
 semiconductors
2.5. Recombination
-
Auger recombination

conduction band c

- - - - - - - - - - - - - - -
electrons N0
dN
= CN  P0  N 0  1
dt  Auger =
C   P0  N 0 
2

+ + + + + + + + + + + + + + +
valence band v holes P0
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 semiconductors
2.5. Recombination
-
Auger recombination
Example:

- - - - - - - - - - - - - - -
dN 1
= CN  P0  N 0   Auger =
C   P0  N 0 
2
dt
C = 1 ... 5.10-29 cm6 s-1
+ + + + + + + + + + + + + + +

N0 = P0 = 1018 cm-3 N0 = P0 = 1019 cm-3 N0 = P0 = 1020 cm-3

Auger =25 ... 5 ns Auger =250 ... 50 ps Auger =2.5 ... 0.5 ps
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 semiconductors
2.5. Recombination

Comparison of recombination processes in crystalline semiconductors

  Carrier concentration

recombination Typical time Material 1016 cm-3 1017 cm-3 1018 cm-3 1019 cm-3
constant

linear  lin = const. . ≈ 1 ms-

1µs
≈ 1 ms-
1µs
≈ 1 ms-
1µs
≈ 1 ms-
1µs

quadratic B=0.3 ... 4 µs ... 300 ... 50 30 ... 5 3 ... 0.5

1 2 10-10 500 ns ns ns ns
 quadr =
B N0 cm3 s-1
Auger C=1 ... 250 ... 50 2.5 ... 0.5 25 ... 5 2.5 ... 0.5
1 µs µs ns ps
 Auger = 5 10-29
C ( P0  N 0 )² cm6 s-1

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 semiconductors

2. Semiconductors

2.6. p-n junction, LED

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 semiconductors
2.6 p-n-junction
Additives in semiconductors
Intrinsic (undoped) p-doping n-doping
i-semiconductor p-semiconductor n-semiconductor

c-band
- - - - -
- EF
donator
EF EF EF
acceptor
EF
+-
- - - - - +- +- +
- +- +- - - - - -
v-band

Fermi level EF: energy, with the probability 50% to find an electron
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 semiconductors
2.6 p-n-junction

p-semiconductor n-semiconductor

- - - - -
EF
Dopands for GaAs: Dopands for GaAs:
p-doping with n-doping with
Zn, Cd, Si (instead of Ga) S, Se, Te, Si (instead of As)
EF
+ + + + + - - - - -

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 semiconductors
2.6 p-n-junction

Quadratic recombination: electron will «jump» into a hole

combined with emission of energy (= light hf)
p

+E light hf
- - - - -
-
EF
LED
F
light hf
+ + + + +

- - - - -
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 semiconductors

Semiconductors

Merci! Thank you!

Gracias! Murakoze!
Спасибо Danke!
Prof. Dr. V. Brückner
e-mail: v.brueckner@hotmail.de
© Brückner, Kigali 2018