FET

AMPLIFIERS
Junction Field Effect Transistor
AC Analysis
Field Effect Transistor

FET device controls output

current by means of small
input voltage

Where BJT has β, FET has

transconductance factor, gm

Unit for gm: Siemen or Ω-1

Definition of gm using transfer
characteristic.

Output drain current over

Input gate voltage

Slope at point of
operation
Calculating gm at various bias points.

Slope of the
characteristic at the
point of operation
Mathematical Definition of gm
gm can be written as yfs on specification sheets.
2 I DSS  VGS 
gm  1  
| VP |  V P 

When VGS = 0 V, gm is can be denoted as gm0 (maximum gm )

2 I DSS
g m0 
| VP |
The initial equation then becomes

 VGS 
g m  g m 0 1  
 VP 
Exercise on gm
For a JFET with IDSS = 8 mA and VP = - 4V, determine
(a) Maximum gm
(b) Value of gm when VGS = -1.5V

Solutions

(a) Maximum gm when VGS = 0V

(b) When VGS = -1.5V

Plotting gm versus VGS

When VGS = VP,

gm is zero
When VGS = 0V,
gm is maximum
Example
Plot gm versus ID with IDSS = 8mA and VP = -4V

2 I DSS  VGS 
gm  1  
| VP |  V P 

2 I DSS
g m0 
| VP |
Effects of ID on gm

 Relationship between ID dan gm can be obtained

from Shockley Equation:
VGS ID
1 
VP I DSS

 gm can also be written as

 VGS 
g m  g m0 1  
 VP 
ID
g m  g m0
I DSS
Plotting gm versus ID

ID 2 I DSS
g m  g m0 g m0 
I DSS | VP |
where
gm ID
gm0 IDSS
0.707 gm0 IDSS/2
0.5 gm0 IDSS/4
0 0 mA
Example gm ID
gm0 IDSS
Plot gm versus ID with
0.707 gm0 IDSS/2
IDSS = 8mA and VGS = -4V 0.5 gm0 IDSS/4
0 0 mA

ID
g m  g m0
I DSS

2 I DSS
g m0 
| VP |
FET Impedance
 FET input impedance, Zi is sufficiently large.
Usually in the range of 109 (1000M)

Zi  FET   
 FET output impedance, Zo is similar in magnitude
to conventional BJTs.
 Output impedance appears as yos with units of s
Definition of rd using FET drain characteristics.
FET AC equivalent circuit.
JFET fixed-bias configuration.
Substituting the JFET AC equivalent circuit
unit

Zi  FET   R G
Determining Zo.

Set Vi  0

Zo  FET  = rd || R D
if rd  10R D
Determining Zo.

Set Vi  0

Zo  FET  = R D
if rd  10R D
Determining Av

A v =  Vo Vi  = -g m  rd || R D 
A v =  Vo Vi  = -g m  R D  when rd  10R D
Determining Av

Vo = -g m Vgs  rd || R D 
Vgs = Vi
Vo = -g m Vi  rd || R D 
Example

Determine the
following for the network

IDSS=10mA 1. g m and rd
VP=-8V 2. Z i
3. Z o
4. A V
5. A V ignoring effect of rd

IDQ=5.625mA
VGSQ=-2V
yOS=40S
Solutions

IDQ=5.625mA
VGSQ=-2V
IDSS=10mA 2I DSS 2  10mA 
g m0 = = = 2.5mS
VP=-8V VP 8V

1 1
rd = = = 25 k
y os 40S

Z i = R G = 1MΩ
yOS=40S Zo = rd || R D = 2k || 25k = 1.85k
Solutions..

Zo = rd || R D = 2k || 25k = 1.85k

Vo
AV = = -g m  R D || rd 
Vi
With rd , A v = -3.48

Vo
AV = = -g m R D
Vi
Without rd , A v = -3.76
Self-Bias JFET configuration.

JFET AC equivalent circuit.

Redrawn Network

Zi = ?
Zo = ?
AV = ?
JFET voltage-divider configuration

Network under AC conditions

Redrawn network
Important Parameters

Z i  R1 || R2
Z o  rd || RD
AV :
Vi  Vgs
and
Vo   g mVg s ( RD || rd )
If rd l arg e,
Thus AV   g m RD