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EBB 323 Semiconductor Fabrication Technology: Oxidation
EBB 323 Semiconductor Fabrication Technology: Oxidation
EBB 323 Semiconductor Fabrication Technology: Oxidation
Fabrication Technology
Oxidation
SiO2 passivation
layer
Si Si
Cont..
ii. Chemical in nature
Avoid contamination from electrically
active contaminants (mobile ionic
contaminants) of the electrically active
surface
Si
Oxide layer
Wafer
source Drain
S D
SiO2 surface
Original SiO2
surface
SiO2
Si substrate
Linear oxidation
B
X t
A
C0 Ci
F2 D ...................5.2
Where, tox
Ci = oxygen concentration at theSi/SiO2 interface
D = diffusion coefficient of O2 or H2O in oxide
tox = oxide thickness
•Kinetics of the chemical reaction between
silicon and oxygen is characterised by
reaction constant, k:
F3 k sCi .................5.3
In steady state, all flux terms are equal: F1 =
F2 = F3. Eliminating C0 from the flux
equations, we can obtain:
C*
Ci ...................5.4
k kt
1 s s ox
h D
•If N0x is a constant representing the
number of oxidising gas molecules
necessary to grow a unit thickness of
oxide, one can write:
dtox N ox k sC *
N ox F N ox k sCi .......5.5
dt k s k s tox
1
h D
tox2 D D
tox N oxC *dt 0........5.7
2 ks h
Or
1 1
t 2
2 D
Defining new constantoxA and B in terms
tof 2k sDN
ox D, C *t..........
, Noxoxand C* : ..5.8
ks h
1 1
A 2 D ............5.9
We can obtain: ks h
From which we find tox
and
:
B 2 DC * N ox ................5.10
t 2 Atox Bt.....................5.11
A (t )
tox 1 2 .................5.12
2 A / 4B 1
is introduced to take into account the possible presence of an
oxide layer on the Si before thermal oxide growth being carry out
–Oxide layer can be a native oxide layer due to oxidation of bare Si by
ambient air or thermally grown oxide produced during a prior oxidation
step
=0 if the thickness of the initial oxide is equal to zero
•When thin oxides are formed the growth rate is limited by the
kinetics of chemical reaction between Si and O2.
Eq. 5.12 becomes:
B
tox t ...........5.13
A
Which is linear with time.
B
•The A ratio is called “linear growth coefficient”, and is dependent
on crystal orientation of Si
•When thick oxides are formed, the growth rate is limited by the
diffusion rate of oxygen through the oxide. Eq 5.12 becomes:
tox B (t ) Bt ..............5.14
• The coefficient B is called “parabolic growth coefficient” and is
independent on crystal orientation of Si.
• The parabolic growth coefficient can be increased:
– Increase the pressure of the ambient oxygen up to 10-20 atm (high
pressure oxidation)
•The linear growth coefficient can be increased:
– Si consists of high concentration of impurities e.g. phosphorous:
increase point defects in the crystal which increase the oxidation reaction
rate at the Si/SiO2 interface
– Oxidation process also generate point defects in Si which enhance
diffusion of dopants. Some dopants diffuse faster when annealed in
oxidising ambient than in neutral gas such at N2
Oxidation rate
Controlled by:
1. Wafer orientation
2. Wafer dopant
3. Impurities
4. Oxidation of polysilicon layers
1. Wafer orientation
Large no of atoms allows faster oxide growth
<111> plane have more Si atoms than <100>
plane
• Faster oxide growth in <111> Si
• More obvious in linear growth stage and at low
temperature
Crystal structure of silicon
<100> plane
<111> plane
Dependence of oxidation linear rate constant and oxide fixed
charge density on silicon orientation
2. Wafer dopant(s) distribution
Oxidised Si surface always has dopants;
N-type or P-type
Dopant may also present on the Si surface from
diffusion or ion implantation
Oxidation growth rate is influenced by dopant
element used and their concentration e.g.
• Phosphorus-doped oxide: less dense and etch faster
• Higher doped region oxidise faster than lesser doped
region e.g. high P doping can oxidise 2-5 times the
undoped oxidation region
• Doping induced oxidation effects are more obvious in
the linear stage oxidation
Schematic illustration of dopant distribution as a function of position
is the SiO2/Si structure indicating the redistribution and segregation
of dopants during silicon thermal oxidation
Distribution of dopant atoms in Si
after oxidation is completed
During thermal oxidation, oxide layer
grows down into Si wafer- behavior
depends on conductivity type of dopant
N-type: higher solubility in Si than SiO2,
move down to wafer. Interface consists of
high concentration N-type doping
P-type: opposite effect occurs e.g Boron
doping in Si move to SiO2 surface causes B
pile up in SiO2 layer and depletion in Si
wafer change electrical properties
3. Oxide impurities
Certain impurities may influence
oxidation rate
e.g. chlorine from HCl from
oxidation atmosphere increase
growth rate 1-5%
4. Oxidation of polysilicon
Oxidation of polysilicon is essential
for polysilicon conductors and
gates in MOS devices and circuits
Oxidation of polysilicon is
dependent on
Polisilicon deposition method
Deposition temperature
Deposition pressure
The type and concentration of doping
Grain structure of polysilicon
Thermal oxidation method
Thermal oxidation energy is
supplied by heating a wafer
SiO2 layer are grown:
Atmospheric pressure oxidation
oxidation without intentional pressure control
(auto-generated pressure); also called
atmospheric technique
High pressure oxidation high pressure is
applied during oxidation
2 atmospheric techniques
1.Tube furnace
2.Rapid thermal system
Oxidation methods
Thermal oxidation
Atmospheric Tube furnace Dry oxygen
pressure Wet oxygen
Place the
sample
Horizontal tube furnace
Integrated system of a tube furnace
consists of several sections:
1. Reaction chamber
2. Temperature control system
3. Furnace section
4. Source cabinet
5. Wafer cleaning station
6. Wafer load station
7. Process automation
Vertical tube furnaces
Small footprint
Maybe placed outside
the cleanroom with
only a load station
door opening into the
cleanroom
Disadvantage:
expensive
Rapid Thermal Processing
Based on radiation principle heating
Useful for thin oxides used in MOS
gates
Trend in device miniaturisation
requires reduction in thickness of
thermally grown gate oxides
< 100Å thin gate oxide
Hard to control thin film in
conventional tube furnace
Problem: quick supply and remove O2
from the system
RTP system: able to heat and cool the
wafer temperature VERY rapidly
RTP used for oxidation is known as Rapid
Thermal Oxidation (RTO)
Have O2 atmosphere
Other processes use RTP system:
Wet oxide (steam) growth
Localised oxide growth
Source/ drain activation after ion implantation
LPCVD polysilicon, amorphous silicon, tungsten, silicide
contacts
LPCVD nitrides
LPCVD oxides
RTP design
High pressure
oxidation
Oxidant sources
1. Dry oxygen
2. Water vapor sources
a) Bubblers/ flash
b) Dry oxidation
c) Chlorine added oxidation
1. Dry oxygen
• Oxygen gas must dry not
contaminated by water vapor
• If water present in the oxygen:
– Increase oxidation rate
– Oxide layer out of specification
• Dry oxygen is preferred for growing
very thin gate oxides ~ 1000Å
2a. Bubblers
• Bubbler liquid – DI water heated close to boiling
point 98-99C
– create a water vapor in the space above liquid
• When carrier gas is bubbled through the water
and passes through the vapor saturated with
water
• Influence of elevated temp inside tube water
vapor becomes steam and results in oxidation of
Si surface
• Problem: contamination of tube and oxide layer
from dirty water and flask
2b. Dry oxidation (dryox)
• O2 and H2 are introduced directly into oxidation
tube mixes
• High temperature in tube forms steam wet
oxidation in steam
• Advantage:
– Controllable: gas flow can be controlled by
flow controllers
– Clean: can purchase gases in a very clean and
dry state
• Disadvantage: explosive property of H2
overcome by flow in excess O2
2c. Chlorine added oxidation
• Chlorine addition:
– Reduce mobile ionic charges in the oxide layer
– Reduce structural defects in oxide and Si
surface
– Reduce charges at Si-SiO2 interface
• Chlorine sources:
– Gas: anhydrous chlorine (Cl2), anhydrous
hydrogen chloride
– Liquid: trichloroethylene (TCE), trichloroethane
(TCA)
• TCA is preferred source for safety and
ease of delivery
Post-oxidation evaluation
• Surface inspection
– quick check of the wafer surface using UV light (surface
particulates, irregularities, stains)
• Oxide thickness
– several techniques such as color comparison, fringe counting,
interference, ellipsometers, stylus apparatus, scanning
electron microscope
• Oxide and furnace cleanliness
– Ensure oxide consists of minimum number of mobile ionic
contaminants. Use capacitance/voltage (C/V) evaluation: detect
total number of mobile ionic contaminants NOT the origin of
contaminants
Thermal nitridation
• < 100Å SiO2 film possesses poor
quality and difficult to control
• Silicon nitride (Si3N4)
– Denser than SiO2 less pin holes in
thin film ranges
– Good diffusion barrier
• Growth control of thin film is
enhanced by a flat growth
mechanism (after an initial rapid
growth)
Nitridation of <100> silicon