Electronic Devices Floyd 7th Edition Solution Manual

Instructor’s Resource Manual to accompany
ELECTRONIC DEVICES, Sixth Edition

and
ELECTRONIC DEVICES:
ELECTRON FLOW VERSION, Fourth
Edition
Thomas L. Floyd
Prentice
Hall
Upper Saddle River, New Jersey

Columbus. Ohio
Copyright 2002 by Pearson Education, Inc., Upper Saddle River, New Jersey 07458. All rights
reserved. Printed in the United States of America. This publication is protected by Copyright and
permission should be obtained from the publisher prior to any prohibited reproduction, storage in a
retrieval system, or transmission in any form or by any means, electronic, mechanical, photocopying,
recording, or likewise. For information regarding permission(s), write to: Rights and Permissions
Department.
Instructors of classes using Floyd, Electronic Devices, Sixth Edition, and Electronic Devices: Electron
Flow Version, Fourth Edition, may reproduce material from the instructor’s resource manual for
classroom use.
10 9 8 7 6 5 4 3 2 1
Prentice
łlall
ISBN 0-13-092257-9
Contents
Solutions for End-of-Chapter Problems
Chapter 1
Chapter 2 6
Chapter 3 18
Chapter 4 26
Chapter 5 35
Chapter 6 46
Chapter 7 61
Chapter 8 72
Chapter 9 79
Chapter 10 87
Chapter 11 100
Chapter 12 107
Chapter 13 119
Chapter 14 126
Chapter 15 134
Chapter 16 140
Chapter 17 145
Chapter 18 151
Results for System Applications 157
Summary of EWB/Multisim Circuit Files 167
Test Item File 185
l
Chapter 1
Introductio
n 1-1 Atomic Structure
Section
1. An atom with an atomic number of 6 has 6 electrons and 6 protons
2. The third shell of an atom can have 2n2 = 2(3) 2 = 18 electrons
Section 1-2 Semiconductors, Conductors, and insulators

3. The materials represented in Figure 1-40 in the textbook are
(a) insulator (b) (c) conductor
semiconductor
4. An atom with four valence electrons is a semiconductor.
Section 1-3 Covalent Bonds

5. In a silicon crystal, each atom forms four covalent bonds.
Section 1-4 Conduction in Semiconductors

6. When heat is added to silicon, more free electrons and holes are produced.
7. Current is produced in silicon at the conduction band and the valence band.
Section 1-5 N-Type and P-Type Semiconductors

8. Doping is the carefully controlled addition of trivalent or pentavalent atoms to pure (intrinsic)
semiconductor material for the purpose of increasing the number of majority carriers (free
electrons or holes).
9. Antimony is a pentavalent (donor) material used for doping to increase free electrons. Boron
is a trivalent (acceptor) material used for doping to increase the holes.
Section 1-6 The Diode

10. The electric field across the pn junction of a diode is created by donor atoms in the n region
losing free electrons to acceptor atoms in the p region. This creates positive ions in the ii-
region near the junction and negative ions in the p region near the junction. A field is then
established between the ions.
11. The barrier potential of a diode represents an energy gradient that must be overcome by
conduction electrons and produces a voltage drop, not a source of energy.
3
Chapter 1
Section 1-7 Biasing the Diode

12. To forward-bias a diode, the positive terminal of a voltage source must be connected to the
p region.
13. A series resistor is needed to limit the current through a forward-biased diode to a value
which will not damage the diode because the diode itself has very little resistance.
Section 1-8 Voltage-Current Characteristic ofa Diode

14. To generate the forward bias portion of the characteristic curve, connect a voltage source
across the diode for forward bias , and place an ammeter in series with the diode and a
voltmeter across the diode. Slowly increase the voltage from zero and plot the forward
voltage versus the current.
15. A temperature increase would cause the barrier potential to decrease from 0.7 V to 0.6 V.
Section 1-9 Diode Models

16. (a) The diode is reverse-biased. (b) The diode is forward-biased.
(c) The diode is forward-biased. (d) The diode is forward-biased.
50 M£2
17. (a) OR' (5 V — 8 V) - —3
50 M i + 10 V
) f2 F' 0.7 V
(c) Kt = 0.7 V
(d) F' 0.7 V
Section 1-10 Testing a Diode

18. (a) Since ID' 25 V = 0.5 the diode is open.
(b) The diode is forward-biased but since ID' 15 V = the diode is
open.
(c) The diode is reverse-biased but since >R' 2.5 V = 0.5 . the
diode is shorted.
19. (d)
A' TheSI'diode
+25 is
V reverse-biased and Kg = 0 V. The diode is operating properly.
B' SI — 0.7 V = 25 V — 0.7 V =
+24.3 V c' sz + 0.7 V' 8 V + 0.7
V = +8.7 V
D' S2' +8.0 V
4
Chapter 1
EWB/Multisim Troubleshooting Problems
The solutions showing instrument connections for problems 20 through 28 are available in the
Solutions folder for Chapter 1 on the CD-ROM provided with the textbook. The solutions may be
accessed using the password EDSFLOYD. The faults in the circuit files may be accessed using the
password book (all lowercase).
20. Diode shorted
21. Diode open
22. Diode open
23. Diode shooted
24. No fault
25. Diode shooted
26. Diode leaky
27. Diode open
28. Diode shooted
5
Chapter 2
Diode Applications
Section 2-1 Half-Wave Rectifiers
1. See Figure 2-1.
(a)
Figure 2-1
— 0.75 V — 0.7
2. (a) OF = 4.3 V
A V 47 D = 91.5 mA
V
47 Ci 49.3 V
(b) /, =
V(p) —0.7 V _ 50 V —0.7 V = 14.9
3.3 mA
fi kO
3.
3.3 kf2
4. Vie —
— nVp i —- (0.5)115 V = 57.5 V rms
Vie —
— nVp i —— (0.2)115 V = 23 V rms
p(sec) 1.414(57.5 V) = 81.3 V
Y p(S k ) q_ 81.3 V
e —— =
25.9 V
= 29.5 W
R 220 II
_ avg(secp) —0.7 VJ
(25
2 •9 V)° = 3.05 W
Rp(80.6 V) 220
Hi
Section 2-2 Full-Wave Rectifiers
s. (a) K„ 5 V- 1.59 V
2Kp 2(100 V)
@) V„q — —-
— 63.7 Vg 2(10 V)
(C) 2s’ + 10 V + 10 V = 16.4 V
2
(d) K — is v 2(40 V) — 15 V = 10.5 V
6
Chapter 2
) Center-tapped full-wave rectifier

) p(sec) (0•25)(1.414)110 V = 38.9 V
p(sec) 38.9 V
- 19 4 V
2 2
) See Figure 2-2. Ug = 19.4 V — 0.7 V = 18.7 V
Figure 2-2
p(sec)
18.7
—0.7 V
= 18.7 mA
fig V
1.0
PIV = 19.4kf2
V + 18.7 V = 38.1 V
10 V
= 55 V for each half
— 55 V) = 173 V
V„g‘-
e Figure 2-3.
Figure 2-3
= 78.5 V
IV ' p(gp() 1.414(20 V) = 28.3 V
ee Figure 2-4.
Figure 2-4
Chapter 2
Section 2-3 Power Supply Filters and Regulators

12• p (1•414)(0.5 V) = 707 mV pp
707 m V
r(pp) - 0.00943
r—
—
7J V
Dc
30 V
= 8.33 V pp
fR C (120 Hz)(600 Ci)(50 )
<Dc 1— ' I- 30 V = 25.8 V

' - 2@gC ""' (240 Hz)(600 II)(50 QF)
14. %r r(pp) 100 - 8.33 V

—
— 25.8 100 = 32.3%
’DC V
15. Kyq) = (0.01)(18 V) = 108 mV
1
c K = ' 18 V = 556 ,uF
— "'"' (120 Hz)(1.5 kf2)(180
mV)
80 V
16a ’r(pp) = 6.67 V
p(in) (120 Hz)(10 kfl)(10
fR QF)
pC K = 1— ' 80 V =
46.7 V 2@ C ""' (240 Hz)(10kf2)(10 QF)
r(pp) 6•67 V
= 0.143
Dc 46•7 V
17. Vp( e — (1.414)(36 V) = 50.9

V r(rect)' 1•4 V' 50.9 V — 1.4 V =49.5 V
p(sec
Neglecting R„r „ 49.5 V = 1.25 V
* yi,c p‹rect (120 Hz)(3.3 kf2)(100 QF)
1
= 49.5 V — 0.625 V = 48.9
2 V
8
Chapter 2
48.9 V
Figure 2-5
19. Load regulation US.5 V —14.9 V

100% = 100° o - 4‘ o
= 14.9 V
20. FL' — (0.005) = 12 V — (0.005)12 V = 11.94 V
Section 2-4 Diode Limiting and Clamping Circuits

21. See Figure 2-6.
0.7 V
Figure 2-6
22. Apply Kirchhoffis law at the peak of the positive half cycle:
(b) 25 V = R+ R+ 0.7 V 2
R' 24.3 V
24.3 V
= 12.15 V
2
out R
+ 0•7 V = 12.15 V +
0.7 V = 12.85 V
See Figure 2-7(a).
1.3
(C) 5.65 V
R'
V 2
out R + 0.7 V = 5.65 V + 0.7 V = 6.35
V
See Figure 2-7(b).
9
Chapter 2
(d) 4.3 V
R' 2 = 2.15 V
V„, — Pø + 0.7 V = 2.15 V + 0.7 V = 2.85
V
See Figure 2-7(c).
(a (b)
)
(c)
Figure 2-6
23. See Figure 2-8.
(a) (b)
(c) (d)
(e) (f)
Figure 2-8
10
Chapter 2
24. See Figure 2-9.
(a) (b)
(c)
Figure 2-9
25. See Figure 2-10.

0.7 V 0.7 V
—0.7 —0.7
V V
(a) (b)
Figure 2-10

30 V - - -
11.3 V
(a) (b)
0
-11.3 V
—30 V
——
(c)
— (d)
Figure 2-11
27. (a) A sine wave with a positive peak at 0.7 V, a negative peak at —7.3 V, and a dc value of
—3.3 V.
(b) A sine wave with a positive peak at 29.3 V, a negative peak at —0.7 V, and a dc value of
+14.3 V.
(c) A square wave varying from +0.7 V to —15.3 V with a dc value of —7.3 V.
(d) A square wave varying from +1.3 V to —0.7 V with a dc value of +0.3 V.
28. (a) A sine wave varying from —0.7 V to +7.3 V with a dc value of +3.3 V.
(b) A sine wave varying from —29.3 V to +7.3 V with a dc value of +14.3 V.
(c) A square wave varying from —0.7 V to +15.3 V with a dc value of +7.3 V.
(d) A square wave varying from —1.3 V to +0.7 V with a dc value of —0.3 V.
11
Chapter 2
Section 2-5 Voltage Multipliers

29• OUT' 2 Up(in) 2(l •414)(20 V) = 56.6 V
See Figure 2-12.
Figure 2-12
30+ TOUT(rip) 3 p(in 3(1 •4l4)(20 V) = 84.8 V

OUT(quad) = 4(1.414)(20 V) = 113
See Figure 2-13. V
(a) Tripler
(b) Quadrupler
Figure 2-13
Section 2-6 The Diode Data Sheet

31. The PIV is specified as the peak repetitive reverse voltage = 50 V.
32. The PIV is specified as the peak repetitive reverse voltage = 400 V.
33. Use the specified s = 800 A.

50 V
800 A- 6.25 mdl
surge(min)
12
Chapter 2
Section 2-7 Troubleshooting

34. If a bridge rectifier diode opens, the output becomes a half-wave voltage resulting in an
increased ripple at 60 Hz.
2Kp 2(115 V)(1.414) _

35• av — 104
g V
The output of the bridge is correct. However, the 0 V output from the filter indicates that
the
surge resistor is open or that the capacitor is shorted.
36. (a) (b) Correct
Incorrect. Open diode.
(c) Correct
Incorrect. Open diode.
(d)
V
= 23 V rms
p(sec) 1•414(23 V) = 32.5 V

The peak voltage for each half
of p(sec) 32•5 V is
the secondary 16 3 V
2 2
The peak inverse voltage for each diode is PIV = 2(16.3 V) + 0.7 V = 33.2 V
The peak current through each diode is
— 0.7
16.3 V — 0.7
V - 47.3 mA
A V 330
II
The diode ratings exceed the actual PIV and peak current.
The circuit should not fail.
System Application Problems

38. (a) No voltage between TPI and TP2:
Possible causes: fuse blown or power cord not
plugged in.
Corrective action: check fuse and power plug.
Replace fuse or insert plug.
(b) No voltage between TP3 and TP4, 110 V from TPl to
TP2:
Possible causes: open primary or shorted
secondary.
Corrective action. check windings with
ohmmeter. Replace transformer.
(c) 50 V between TP3 and TP4, input voltage correct:
Possible causes: partially shorted primary or
wrong turns ratio.
Corrective action. check primary winding and transformer rating. Replace
transformer.
(d) 25 V between TP3 and TP4, input voltage correct:
Possible causes: partially shorted secondary or wrong turns ratio.
13 winding and transformer rating. Replace
Corrective action: check secondary
transformer.
Chapter 2
(e) Full-wave voltage with peak of 50 V from TP7 to ground:

Possible cause: Filter capacitor open.
Corrective action: check capacitor with ohmmeter. Replace capacitor.
(f) Excessive 120 Hz ripple at TP7:
Possible causes. leaky filter capacitor or excessive loading.
Corrective action: check capacitor and load. Replace capacitor or correct load
condition.
(g) 60 Hz ripple at TP7:
Possible cause: open diode in bridge.
Corrective action: check diodes with ohmmeter and replace defective one.
(h) No voltage at TP7:
Possible causes. open surge resistor, blown fuse, open winding, shorted C.
Corrective action. check all and replace defective component.
39. Something must be causing a diode to open. Check all the diodes for opens this time. You
will most likely find one. The PIV or the maximum surge current must have been exceeded.
Excessive PIV could be caused by some shorted primary windings which would produce an
excessive secondary voltage. If caused by excessive surge current, a small limiting resistor
will have to be placed in series with C,.
40. If the top diode in textbook Figure 2-87 were reversed, two forward-biased diodes would be
placed in series across the secondary during the negative half-cycle which, most likely, would
blow the diodes open and result in no voltage at TP8.
Advanced Problems
_ 1 (120
35 V = 177
c—
— ""' Hz)(3.3 kfl)(0.5 V) QF
ip
14
Chapter 2
42.
Dc l
' =1— DC
' =C
2@g 1 — DC
1
= 62 2
c—
—(240 Hz)(1.0 kf2)(1 — 1
(240 Hz)(1.0 kf2) ,uF
Then0.933) (0.067)
1
(120 Hz)(1.0 kf2)(62.2 ) 15 V = 2 V
43. The capacitor input voltage is

plin) 1.414)(24 V) — 1.4
V = 32.5p(;p)
V
surge 32•5 V
50 A
- 651 mf2
’surge
The nearest standard value is 680 md.

The voltage at point A with respect to ground is
A 1.414(9 V) = 12.7 V
Therefore,
B 12.7 V — 0.7 V =
12 V
0•05 <B 0.05(12 V) = 0.6 V peak to peak
r i 1
12 V = 245 QF
c—
— (120 Hz)(680 f2)(0.6
The nearest standardV)
value is 270
.
Let P surge 1•0 D•
— iz
surge(»iuf
) ' 1 A
of
12 V
680 f2= 17.6 mA
2 p(py() + 0•7 V = 24.7 V IN400I
A
270 pF 680 f2
1N400I
Figure 2-14
15 "”*
°
Chapter 2

/g(qp) = 100 mA
9V
100 - 90 D
V — 1.414(0.25
mA V) = 0.354 V
V — 2(0.35 V) = 0.71 V peak to peak
1
9V
(120 Hz)(90 ii)C
c—
— 9V
(120 Hz)(90 f2)(0.71 = 1174 QF
V) Use C — 1200 QF.
Each half of the supply uses identical components. 1N4001 diodes are feasible since the
average current is (0.318)(100 mA) = 31.8 mA.
surg 1•0 2 WÎll limit the surge current to an acceptable value.
e
t200pF
+9V
-9V
90 f2
1200 JiF
All 1N400l
Figure 2-15
46. Both positive and negative limiting of a sinusoidal voltage is not achievable with a single dc
source.
47. Upt = (1.414)(110 V) — 0.7 V = 155 V

V — 2(1.414)(110 V) — 2(0.7 V) = 310
V
16
Chapter 2

The solutions showing instrument connections for Problems 48 through 56 are available in the
48. Diode shorted
49. Diode leaky
50. Diode open
51. Bottom diode open
52. Reduced transformer turns ratio
53. Open filter capacitor
54. Diode leaky
55. D open
56. Load resistor open
17
Chapter 3
9 z * 12 V + 0.3 V - 12.3 V
. See Figure 3-2.
+12.3 V
—0.7 V
Figure 3-2
10. ztmin)' z z z' 5.1 V — (49 mA — 1 mA)(7

II) = 5.1 V — (48 mA)(7 CI) = 5.1 V — 0.336 = 4.76
V
Vz —Vq 8 V— 4.76 V = 3.24 V
3.24
147 mA
VA 22
)CI 147 mA — 1 mA = 146 mA
V — 5.1 V + (70 mA — 49 mA)(7 f2) = 5.1 V + 0.34 V = 5.44
Vz — 8VV — 5.44 V = 2.56
V 2.56 V _ 116 mA
22 II
= 16 L(min) mA — 70mA
= 46 mA 5.44 V — 4.76 V
’ ^ ' * x 100% = x 100% =
11. % Load regulation = ’ Z' Z(min 4.76
14.3%
) V
12. With no load and = 6 V:
y m 6 V 5.1 V - 31 mA
Z
z Z 29
our R+ Zz — zZzAl — 5.1 V — (35 mA — 31 mA)(7 D) = 5.1 V — 0.028 V =
5.07 V
AWith_ no load and = 12 V:
KB_ 12 V — 5.1 V = 238 mA
Z
fi + Z 29 f2
Z
oirr' z + Jz ' 5.1 V + (238 mA — 35 mA)(7 f2) = 5.1 V + 1.42 V =
v
6.52% V
Line regulation = °“ x 100% = 6‘52 V 5’07 x 100% = 24.2%
k 12 V — 6 V
13. NL FL g 100% -
8.23 V — 7.98 V x 100% = 3.13%
% Load regulation = 7.98
FL
V
O“ 0.2 V
14. % Line regulation = x 100°» = 10 V —5 x 100% = 4%
V
3.6 V — 3.4 V
15. % Load regulation = FL
x 100% = 3.4 x 100% = 5.88%
V
19
Chapter 3
Section 3-3 Varactor Diodes

16. At S V, C = 20 pF
At 20 V, C — 10 pF
DC —— 20 pF — 10 pF = 10 pF
(decrease)
17. From the graph, <R - 3 V @ 25 pF

18. f
— 2 CT
1 1 = 12.7 pF
CT 2 2
4v Jf 4c (2 mH)(1
Since MHz)
they are
2 in series, each varactor must have a capacitance of 2 T
25.4 pF
19. Each varactor has a capacitance of 25.4 pF. Therefore, from the graph, <R
2.5 V.
Section 3-4 Optical Diodes

20. Assuming >F 1.2 V,
24 V —1.2 V 33.5 mA
-
21. See Figure
6803-3.
f2
From the graph, the radiant power is approximately 80 mW.
_ 5 V — 0.7 V 143 It
30
Use nearest
mA standard 1% value of 147 Ci or 5% value of 150 II.
+5 V
10
147 fl
Figure 3-3
22. R 10 V
' 200 kf2= 50
20
Chapter 3
23. (a) fi = = 30 kCi
_ 3V
s - 8.57 kf2
(c) R = 5.88 kfl

—
24. The microammeter reading will increase.
Section 3-5 Other Types ofDiodes
25. AK _ 125 mV — 200 mV _ — 75 mV = —750 f2

R — Af 0.25 mA — 0.15 mA 0.10
mA
26. Tunnel diodes are used in oscillators.
27. The reflective ends cause the light to bounce back and forth, thus increasing the intensity of
the light. The partially reflective end allows a portion of the reflected light to be emitted.
Section 3-« rroubleshooting

28. (a) All voltages are correct.
(b) V should be 12 V. Zener is open.
(c) U, should be 110 V. Fuse is open.
(d) Capacitor is open.
(e) Transformer winding open.
29. (a) With D5 open, +ouT- 30 V

(b) With fi open, K =0V
(c) With C leaky, K has excessive 120 Bz ripple limited to 12 V
(d) With C open, K is full wave rectified voltage limited to 12 V
(e) With D3 open, +oirr has 60 Hz ripple limited to 12 V
(f) With Do open, <oirr has 60 Hz ripple limited to 12 V
(g) With T open, TOUT 0V
(h) With F open, K =0V
30. The voltage reading is too low. Inspection of the circuit board reveals that the second diode
from the top is connected backwards.
31. The input voltage is correct but there is 0 V at the rectifier output. Possible causes are open
fuse, open transformer, or open resistor. Cannot be isolated further with given measurements.
32. The LED (D6) will not light when any of the following faults occur: D6 open, fi, openp,
open, fuse blown, transformer winding open, Do shorted, or C shorted.
21
circuits.
ode.
)(20°C) = 1.0 W — 133 mW = 867 mW

)(50°C) = 1.0 W — 333 mW = 667 mW
a 1N4750
40
°C) = 6.8
V + 100
mV = 6.9
V for a
1N4736
°C) = 20
°C)(35°C)
V + 750 = 400 mW — 93.5 mW = 307
mW
mV =
20.8 V
)(55°C)
for a = 2.0 W — 732 mW = 1.27 W
lN4747
is best.
F for a 1N5142.
in MLED81.
vtLED8l for F 1.42 V
100 mA,
OF
W — 44 mW = 56 mW
iW. The power rating is exceeded.
intensity is approximately 4.3 mW/sr.
nsity is 90% or maximum or (0.9)(20
mW/sr)
s resistor, the voltage across MRD821 is

source voltage.
Chapter 3
(d) Sensitivity is maximum for d = 940 nm.
(e) At 900 rim the sensitivity is about 80% of maximum (0.8)(50 QA/mW/cm2)
= 40 mW/cm2
(f) For d = 900 nm, f= 40° and an irradiance of 3 mW/cm°
JD = (0.8)(0.87)(50 QA/mW/cm 2)(3 mW/cm2) = 104
QA
Advanced Problems
38. See Figure 3-4.
AC
input VOUTI
220
f2 D
100 ;iF IN4336
6.8 W
220 f2
Dz
1N4749
24 V
Figure 3-4
39.
OUT(1) 6.8 V . OUT(2) 24
40. For a 1.0 6.8

kf)Vload on each output:
1.0 - 6.8 mA
kf2
24 V
= 24 mA
1.0 kf2
zi - 37 mA for +zT
zz 10.5 mA for
T' 6.8 mA + 24 mA + 37 mA + 10.5 mA = 78.3
mA
The fuse rating should be 100 mA or 1/8 A.
41. See Figure 3-5. 8.2V
Use a 1N4738 zener. 24 V
T' 35 mA + 31 mA 240 fl
= 66 mA 1N4738
24 V — 8.2 V
R—
— - 239 F2
66 mA
Figure 3-5
23
Chapter 3
42. Use a 1N5148 varactor diode.

From the graph in textbook Figure 3-22, the maximum and minimum varactor capacitances
are roughly C, - 80 pF @ 1 V and C —- 12 pF @ 60 V
Use these capacitance values to calculate an inductance range for 350 kHz and 850 kHz:
, = 2.92 ml-I
-
1
= 2.58 mH
Choose I = 2.7 mH and calculate required Cmin and C ,:
=13pF
Cmin' 2 < _ .»
= 77 pF
From the graph in Figure 3-22, the reverse voltages for these capacitance values are
approximately:
R(max 50 V for 13 pF
R(
) .) 1.2 V for 77
pF
Let BIAS 100 V.
R(min) BIAS
2+ 3+ 4 -'-
3+ 4
R(max)' BIAS
2+ 3“ 4+
Let fit + $› + 4 + 5 = 100 kCi.

’R( )( z+ 3+ 4 .2 V(100
+’5) = 1.2k
3'= 100
’BIAS
+4 3 + ^‹+4) V
50 V(100 kfl)
" 3"
100 — 1.2 kit = 49 kD
BIAS
Use $4' 50 kf2. V
z + p5' 100 kf2 — 50.2 kf2 = 49.8
Let $5' kf2
pz' 1.2 kD.
49.8 kf) — 1.2 kf2 =
48.6 kfl Use p2'47 kf).
All other component values are
the same as in textbook Figure 3-
24.
24
Chapter 3
43. See Figure 3-6.

KD_ 12 V — 0.7 V
565
1 20 mA CI
Use standard value of 560 D.
+12 V
560 fl 560 560 560 560 £t 560 560

f2 f2 f2 £1 £1
Figure 3-6
44. See Figure 3-7.

+12 V
560 f2 560 560 560 f2 560 f2 560 f2 560 f2

f2 Ci
Figure 3-7

45. Zener diode open
46. Capacitor open
47. Zener diode shorted
48. Resistor open
25
Chapter 4
Bipolar Junction Transistors (BJTs)
Section 4-1 Transistor Structure
1. Majority carriers in the base region of an npn transistor are holes.
2. Because of the narrow base region, the minority carriers invading the base region find a
limited number of partners for recombination and, therefore, move across the junction into
the collector region rather than out of the base lead.
Section 4-2 Basic Transistor Operation

3. The base is narrow and lightly doped so that a small recombination (base) current is
generated compared to the collector current.
4. B' 0.02 E' 0.02(30 mA) = 0.6 mA

C' E B' 30 mA — 0.6 mA = 29.4 mA
5. The base must be negative with respect to the collector and positive with respect to the
emitter.
6. C' E B' 5.34 mA — 475 QA = 4.87 mA
Section 4-3 Transistor Characteristics and Parameters
7. DC DC_ 8.23 mA
= 0.947
'
BE 8.69 mA
8. &c' ZC_ 25 mA
= 125
GB 200 QA
• B' E C' 20.5 mA — 20.3 mA = 0.2 mA =
200 QAG
20.5 mA
ZB 200 = 102.5
QA
10. E' C + B' 5.35 mA + 50 QA = 5.40 mA
MDC - 5.35 mA = 0.99

’E 5.40 mA
11. C' DC E' 0.96(9.35 mA) = 8.98 mA
26
Chapter 4
12. c = 5 mA
= 100
13. Dc= d Dc
100
= 0.99
14. B KBB — UBE 4 V — 0.7 V 3.3 V

GB = 702 QA
'
4.7 km 4.7 kf2
CE @ 24470
V —II8 V
- 34 mA
E' C + B' 34 mA + 702 QA = 34.7 mA
34
= 48.4
/B 702
15. (a) DBE' 0.7 V

’BB
B
c' 50(1.1 mA) = 55 mA

&c2B'
CE' DCC ccc ' 15 V — (55 mA)(180 f2) = 5.10
V
BC' BE CE' 0.7 V— 5.10 V = —4.40 V
) —0.7 V
BE'
BB BE — 3 V — (—0.7 V) — 2.3 V
G'B = —85.2 QA
C' DC 125(—85.227 kf2'

QA) = —10.7 mA 27 kf2
B'
CE' CC C C' —8V — (—10.7 mA)(390 Ci) = —3.83
V
BC' BE CE' 0.7 V— (—3.83 V) = 3.13 V
16• (a) +c(sat)' _ 15 V
@ 180 CI- 83.3 mA
5 V — 0.7
B ’BB — J
7tB V 3.9 .1 mA
'
UBEkf2
C B' 50(1.1 mA) = 55 mA
'C< C(sat)
Therefore, the transistor is not saturated.
27
Chapter 4
) = 20.5 mA
C(sat)'
— KBE_ 3 V — 0.7 85.2 QA

B' ’BB
V GB 27
C' QC kf2
B' 125(85.2 QA) = 10.7 mA
C< C(sat)
Therefore, the transistor is not saturated.
17. ' B 2V
' E B ' BE 2 V — 0.7 V = 1.3 V
_E 1.3 V
- 1.3 mA
g E 1.0k
2c' DC E' (0.98)(1.3 mA) = 1.27 mA
DC 0.98
- 49
1—a DC 1 — 0.98
B' JE C' 1.3 mA — 1.27 mA =
18. 30 ,trA
B' BB' 10 V
(a) <c' ' 20 V
E' B BE' 10 V— 0.7 V = 9.3 V
CE' C E = 20 V — 9.7
V = 10.7 V BE' 0.7 V
BC' B C' 10 V — 20 V = —10
V
(b) B' BB' —4
V
E' B BE' —4 V — (—0.7 V) = —3.3 V
cz' c x ' —)2 V — (—3.3) V = —8.7
V —0.7 V
BE'
B C' —4 V — (—12 V) = 8
BC'
19. V
100!
Fo K _ 10 V — 0.7 V
BE
rBE 10 kCi - 930 QA
Inc 100
DC &c
1+ D 101- 0.990
C' ' C E'
D c (0.990)(930 QA) = 921
QA KB
For = 150:
E' 930 dQA
Dc 50
DC = 0.993
C' DC E' (0.993)(930 QA) = 924 QA
c 924 /fA — 0.921 = 3 QA
'
28
Chapter 4
20. D(max)' CE C
CE(max)' D(max) _ 1.2 W

= 24 V
ZC 50 mA
21.
D(max)= 0.5 W — (75°C)(1 mW/°C) = 0.5 W — 75 mW = 425 mW
Section «-4 rae Transistor as an Amplifier
22. K@pg = Ay in— 50(100 mV) = 5 V
23. A — K„
V„ 10 V
300 = 33.3
mV
24. A _ 560 Hi = 56
— T
e 10 D
Section 4-5 The Transistor as a Switch
25• c(sat)
'
c(sat) 500
B(min = 3.33,«A
)
JB(min)'
B(min)' IN p) 0. 7 V
IN(min)'
B(min)+ 0.7 V= (3.33 QA)(l .0 MCI) + 0.7 V = 4.03 V
26• C(sat) 15 V
' 1.2 = 12.5 mA
kf2
JB(min)' 12.5 mA = 250 QA
50
c(K«t)— 0.7 4.3 V
B(min)'
= 17.2 kf2
d Dc V 250 /rA
* B '‘.)
Section 4-6 Transistor Packages and Terminal identification

27. See Figure 4-1.
E B C
Figure 4-1
29
Chapter 4
28. (a) Small-signal

(b) Power
(c) Power
(d) Small-signal
(e) RF

29. With the positive probe on the emitter and the negative probe on the base, the ohmmeter
indicates an open, since this reverse-biases the base-emitter junction. With the positive probe
on the base and the negative probe on the emitter, the ohmmeter indicates a very low
resistance, since this forward-biases the base-collector junction.
30. (a) Transistor’s collector junction or terminal is open.

(b) Collector resistor is open.
(c) Operating properly.
(d) Transistor’s base junction or terminal open (no base or collector current).
31. (a) B 5 V — 0.7 V

68 - 63.2 QA
kf2
9 V — 3.2 V
#c' 3.3 kf2 = 1.76
mA _ 1.76 mA = 27.8
4.5 V — 0.7
(b) B
27 k£l
24 V —16.8 V
*c - 15.3 mAII
470
'
= 109
32. With the remote switches closed, Q should be on and Q2should be off, keeping the relay
contacts (pins 10 and 11) open. When a remote switch opens, Q should turn off and Q2
should turn on, energizing the relay and closing the contacts. If the Q collector or base is
open, such that Q is off all the time, Q2will stay on all the time, so this is not the problem.
Most likely, Q has failed so that it remains off all the time or 3. or $4, could be open. Also,
the relay could be faulty.
33. With the remote switches closed, Q and 03 should be on and Qz and Q4should be off keeping
the relay contacts (pins 10 and 11) open. When a remote switch opens, Q (or Q3) should turn
off and Q (or Q4) should turn on, thus energizing the relay and closing the contacts (pins 10
and 11). If the Q (or Q ) collector or base is open, such that Q (or Q3) is off all the time, Q (or
Of) will stay on all the time. Most likely, either Q2(or Q4) or its associated circuitry is faulty
such that it remains on all the time. An internally open junction
30
Chapter 4
in Q or Q3 or an open resistor (fi, or R6 ) could cause this problem. Also, the relay may be
faulty.
34. The constant 0.1 V at pin 9 indicates that Q6 is saturated. Most likely Q has failed such that it
always acts as an open switch keeping Q6saturated. First look for obvious problems such as a
burned resistor (fii,) or a bad contact. Next check the Q collector with pin 7 connected to pin
6. You should see approximately 0.1 V at the f25 collector. If Qz is open, you will see
approximately 3.6 V at the collector.
Data Sheet Problems

35. From the data sheet of textbook Figure 4-19:
(a) For a 2N3903, CEO(ma). = 40 V
(b) For a 2N3904, C(max) ' 200 mA
(d) For a 2N3094 Jc' 25°C,) D(n )x = 1.5 W
(c) For a 2N3903 @ 25°C, D(max = 625 mW
(e) For a 2N3903 with c' l , hFE(in»)'
36. For a 2N3904 with EA= 65°C:

D(. )= 625 mW — (65°C — 25°C)(5.0 mW/°C)
= 625 mW — 40°C(5.0 mW/°C) = 625 mW — 200 mW = 425
mW
37.
For a 2N3903 With Tc 45°C:
D(max)= 1.5 W — (45°C — 25°C)(12 mW/°C)
= 1.5 W — 20°C(12 mW/°C) = 1.5 W — 240 mW = 1.26
W
38. For the circuits of textbook
Figure 4-56: 3 V — 0.7 V
2.3 V
(a) B 330 II 330 2 - 6.97 mA
h FE' I
+c' 15(6.97 mA) = 105 mA
c' 30 V — (105 mA)(270 II) = 30 V — 28.2 V = 1.8 V
CE' 1.8 V — 0.7 V = 1.1 V
D' (1.1 V)(105 mA) = 112 mW
At 50°C. D(any = 625 mW — (50°C — 25°C)(5.0 mW/°C) = 500 mW
No parameter is exceeded.
(b) cso' 45 V which exceeds CEO«..›
39. For the circuits of textbook Figure 4-57:

(a) 5 V — 0.7 V 4.3 V
10 kfl - 4.30
Ic 10 kflQA) = 64.5 mA
150(4.30
/f FE(max) = 150
C(sat)' 9V
L0kO- 9 mA
The transistor is saturated.
31
Chapter 4
V — 0.7 V _ 2.3 V = 23 ,uA

100 kCi
100 kf2
C(sat)' —12
hzpp V
300
560 = 21.4 mA
c' transistor is not
The 300(23 /fA) = 6.90
saturated.
Hi
mA
/C
40• GB(min)' _ 10 mA
hFqp a,) 150 = 66.7 QA
DC _ 10 mA
= 200 QA
B(max) '
FE(min) 5
41. For the circuits of textbook Figure 4-58:

8 V —0.7 V
(a)
B 68 kf2 68 kCl
JiFE' 7.3
150V
- 107 = 16.1 mA
c' 150(l07yA)
+c' 15 V — (16.1 mA)(680 Al) = 15 V — 10.95 V = 4.05
VCE' 4.05 V — 0.7 V = 3.35 V
D' (3.35 V)(16.1 mA) = 53.9 mW
At 40°C, D(max) = 360 mW — (40°C — 25°C)(2.06 mW/°C) = 329 mW
V — 0.7 V
4.3 V
4.7 = 915 QA
4.7 kf2 '
RFE' 300 kf2
c' 300(915yA) = 274 mA
35 V — 0.3 V
C(sat)
470 II = 73.8 mA
The transistor is in hard saturation. Assuming <cp>)i' 0.3 V,
D' (0.3 V)(73.8 mA) = 22.1 mW
Advanced Problems
’DC
42. &c
'
DC
‘ ' (1 +
M DC )
32
Chapter 4
43. c' 150(500 ffA) = 75 mA

cx' 15 V — (180 Al)(75 mA) — 0.7 V = 0.8 V
Since +cE(sat)' 0.3 V Ic 50 mA, the transistor comes out of saturation,
although marginally.
44. From the data sheet, &c(min)' 15 (for c' 100 IIIA) +9
B(max)' 150
15 — io
3 V — 0.7
B 2.3 V
' ' ‘ ’ V 10 mA 10 = 230 €2
Use the standard value of 240 £2 for $B 2N3904
mA 240 f2
To avoid saturation, the load resistance cannot exceed about
9 V —1 V
53.3 f2
150
See
mAFigure 4-2.
Figure 4-2
45. Since 2B= 10 mA for /p = 150 +9 V

mA,
8.3 V
B
''‘’ 9 V 10—mA0.7 V 10 = 830 II
Use
mA910 CL The load cannot exceed 53.3 Al.
See Figure 4-3. 2N3904
910 f2
Figure 4-3
46.
c(in») = ar e’ 50(8 Hi) = 400 D (Use 430 Al) -I-4 V +12 V
J 12 V —5
C 16.3 mA
V 430 D
100, 430 f2
Assuming /tFE
_ 16.3 mA
B = 163 2N3904
,frA 100
B 4 V — 0.7 V
’ ‘‘ ’ 163 = 20.3 kfl (Use 18 kf2)
SeeQAFigure 4-4.
Figure 4-4
33
Chapter 4

47. GB shorted
48. c open
49. Collector-emitter shorted
50. Collector-emitter open
53. GB open
54. c open
34
Chapter 5
Transistor Bias Circuits
Section 5-1 The DC Operating Point
1. The transistor is biased too close to saturation.
2. C' QC B' 75(150 QA) = 11.3 mA

CE' CC- 18 V — (11.3 mA)(1.0 k 1) = 18 V — 11.3 V = 6.75 V
CC CEQ' 6.75 V, CQ' 11.3 mA
Q-point:
3. C(sat)
4. 18 V
CE(cutoff)'
5. Horizontal intercept (cutoff):

CE' Cc' 20 V
Vertical intercept (saturation):
U _ 20 V 2 mA
@ 10 kfl
’BB — 0.7
6 B'
. V ’B
BB' BB + 0.7 V = (20 QA)(1.0 MCi) + 0.7 V
= 20.7 V Jc' &C B' 50(20 QA)' 1 mA
CE' DCC ccc ' 20 V )(10 kfl) = 10 V
— (l
7.
See Figure 5-1.
CE' DCC +cpc
1.2 kf2
RB
c 5
- 0.05 «A
186 kf2
10 V 10
B 10 V — 0.7 V = 186 kfl V
0.05 mA
D(min CE C' (4 V)(5 mA) = 20
)' mW
Figure 5-1
35
Chapter 5
• B' ’BB — K 1.5 V — 0. 7 V

- 80 QA
BEGB 10
_ kf2 _8V
- 20.5 mA
C(sat)
C' DC B 75(80 QA) = 6 mA

The transistor is biased in the linear region because
0 < Iq < c( «ii-
Section 5-2 Voltage-Divider Bias

9• QC(min E' 10p 2
l0fi2 _ 47 kf2
= 69.1
BE 680 Al
= 6.88 mA
E(sat C(sat E' (6.88 mA)(680 O) =

)' B' 4.68 V E(sat) + 0•7 V' 4.68 V + 0.7 V
= 5.38 V
2J DC E
15 V = 5.38 V
(• 2 Id E )(15 V) - (5.38 v)(s + • 2 1; ›•DC E

Dpc D )
E) (15 V) — («2 11 C E)(5.38 V) = A,(5.38 V)
( 2 'J
E) (15 V — 5.38 V) = (22 kf2)(5.38 V)
DC
( zJ (22 kf2)(5.38 V) - 12.3
kf2
MDC 15 V — 5.38 V
fi2 Q“7 tE 12.3
kD
1 + 1 =
1
fi 2 102 kfl 12.3

kf2
= 71.5 QS
11. pz ’CC 15 V = 1.25 V
' z 14 kf2
E' 1.25 V — 0.7 V = 0.55
V
0.55 V
KE 680 D= 809 QA
+c * 809
BE /fA
CE' CC C C E' 15 V — (809 QA)(1.5 + 680 Ci) = 13.2 V
k
36
Chapter 5
15 kf2J(110)(1.0 kf2)
12. B C
V = 1.97 V
' ‘ ' 47 kCl +15 kf2J(110)(1.0
+9 V
E' B— 0.7 V = 1.97kf2)
V — 0.7 V = 1.27
V
1.27 mA
BEE _ 1.27
1.0 V
c' kfl cc c c' 9 V — (1.27 mA)(2.2
kf2) = 6.21 V
13. See Figure 5-2.

47 kf2 2.2 kf2
Figure 5-2 =
=
14. C E' 50(560 Al) = 28 k£2
(a) P IN(base)'
5.6 kD J 28 kf2 4.67
(—12 V) = —12 V) = —1.49 V
33 kfl + 5.6 kfl J 28 kf2
) IN(base)' 50(1120 CI) = 56 kf2
5.6 kfl J 5.6 kf2
(—12 V) = —12 V) = —1.6 V
33 kf2 + 56 k€l J 5.6 k 2
38.1
15. (a) CEQ B+ 0.7 V = —1.49 V + 0.7 V = —0.79 V
E — —1.41
0.79 V mA
CQ' BE C 12
560 V — (—1.41 mA)(1.8 kf2) = —9.46
CEQ' V
f2
(b) EQ' —9.46 V — (—0.79 V) = —8.67 V
CQ CEQ'
D(min)' CC c ( 1.41 mA)(—8.67 V) = 12.2 mW
CQ Bias Methods
Section 5-3 Other
16. BB' CC* E' 0V
KCT— 0.7 12 V — 0.7 V
11.3 V
V GB 22 kf2 = 514 QA
C' QC B' 90(514 QA) 22=kfl
46.3 mA
CE' DCC ccc ' 12 V — (46.3 mA)(100 Ct) = 7.37
V
17. CQ 180(514 ) = 92.5
mA
CEQ 12 V — (92.5 mA)(100 II) = 2.75
V
18. c' changes in the circuit with a common Kg and ABB supply because a change in P causes
B to change which, in turn, changes c-
37
Chapter 5
19. B ’BB — KBE_ 9 V — 0.7 V

- 553 QA
7tB 15 kf2
C(sat)
For &c ' @ 50: 100 CI

Jc' Q›c B' 50(553 QA) = 27.7 mA
CE' CC C C' 9 V — (27.67 mA)(100 D) = 6.23 V
For f bc' )251
C' QC B' 125(553 QA) = 69.2 mA
CE' Cc — 2c c' 9 V — (69.2 mA)(100 Ci) = 2.08 V
Since c < c(sat› for the range of , the circuit remains biased in the linear
region.
20. C(sat)' _9V
100= 90 mA
At 0°C: f2
&c ' ) )0 — 110(0.5) =
55
B V_
553 QA
2c' Q›c B' 55(553 QA) = 30.4 mA
CE' CC C c ' 9 V — (30.4 mA)(100 f2) = 5.96 V
At 70°C:
&c ' 110 + 110(0.75) =
193 B = 553 QA
Jc' Q›c B' 193(553 QA) =
107 mA
+c >
c' c( «o, therefore
c(sat) c(o•)' the
90 IRA — 30.4 mA' 59.6 mA
transistor
CE is in saturation
CE(sat)' at 5 . 9 6 V 0 V = 5 .9 6
CE(0°)
70°C. V
21. Assuming GBz 0 V,
E B BE' 0 V— 0.7 V = —0.7 V
KE — _ — 0.7 V — (—5 V) _ 4.3 V
= 1.78 mA
+ B MDC
EK
EE
Jc - E
2.2 kfl + 22 kfl/100 2.42 kf2
B 1.78 mA
100 = 17.8 QA
B' (17.8 QA)(22 kf2) = —391
mV E' —391 mV — 0.7 V = —
1.10 Vcc c c' 5 V — (1.78 mA)(1.0 kfl) = 3.22
c' V
22. Assume that at saturation, <cE- 0 V.
Since BE = 1.10 V and
<c(sat)
C(sat)' cc c(sat) <E(sat)
5 V (—1.10 V)
= 6.1 mA
RC 1.0 kf2
E(min V _ 3.9 V - 639 II
) c(sat) 6 1 mA
38
Chapter 5
23. At 100° C:
B 0.7 V — (2.5 mV/°C)(75°C) = 0.513
E' VEE 5 V — 0.513 V
BE - 2.04 m A
BE 2.2 kfl
At 25°C:
4.3 V
5V —kf2
2.2 0.7 ' 2.2 = 1.95 mA
V
AfE' kfl 2.04 mA — 1.95 mA = 0.09 mA
24. A change in &c does not affect the circuit when BE >>$Bt C
Since
E+ B MDC
In the equation, if $B &c is much smaller than $E. the effect of &c is negligible.
25. Assume &c ' 100.

KEE _KE 10 V — 0.7 V = 16.3 mA
BE
470 Ci + 10
CE' EE CC C( C + E) = 20 V — 13.1 V = —6.95 V
kfl/100
26. B' 0.7 V
CC 3 V — 0.7 V
BE = 1.06 mA
1.8 kfl + 33 km/90
@ +G B /
<c' cc c c' 3 V — (1.06 mA)(1.8 kf2) = 1.09
V MDC
27
a c' 1.06 mA from Problem 26.
c' 1.06 mA — (0.25)(1.06 mA) = 0.795 mA
c'
’CC ’BE
+ B MDC
V —(0.795 mA)(33 k )/90 = 2.53 kf2
0.795 mA
28 c' 0.795 mA from Problem 27.
+ CE' C c' 3 V — (0.795 mA)(2.63 kfl) =
CC 0.989 V
+12 V
D(i1iin)' CE C' (0.989 V)(0.795 mA) = 786 W
29. See Figure 5-3.
12 V — 0.7 V 1.2
= 7.87 mA kf2
CC
c' cc +c c' 12 1.2
V— kfl(7.87
+ 47 mA)(1.2
kf2/ kit) = 2.56
V BE 200
+ GB / Q 47 kf2
Figure 5-3
39
Chapter 5

30. KJ' 0.7 V, z' 0V
8 V — 0.7
B 0.7 V
V 10 = 221 QA — 70 QA = 151
+c' 200(151
33 k£2QA) =kf2
30.2 mA
8V
= 3.64 BE= 0 V
2.2k
If the problem
mA, soisccorrected,
1.86 V
Kt' KE' 1.86 V — 0.7 V = 1.16
V
E = 1.16
'’16 mA
z c' 8 V — (1.16 mA)(2.2 kf2)
= 5.45 V
31. (a) Open collector

(b) No problems
(c) Transistor shorted from collector-to-emitter
(d) Open emitter
32. For &c ' 351
4.5 = I —10 V) = —3.1
{14.5 V
For &c '
l00i —10 V) = —3.4
5.17 baseVvoltage at point 4 is within the correct range.
The measured
E' —3.1 V + 0.7 V = —2.4 V
\15.17
*c — 2.4 V
*E 680 D = —3.53 mA
<c' —10 V — (—3.53 mA)(1.0 kf2) = —6.47 V
Allowing for some variation in DBE and for resistor tolerances, the measured collector and
emitter voltages are correct.
33. (a) The 680 f2 resistor is open:

Meter 1: 10 V
Refer 2: floating
Meter 3: <B' I5.6 kf2 —10 V) = —3.59

V
7lfeier 4: 10 V {15.6 kf2 J'
40
Chapter 5
(b) The 5.6 kf2 resistor is open.
9.3 V
= 275
10 kf2 + 35(680 €2)
c' 10 V
35(275
C(sat)'
1680 = 5.95 )'mA9.6
mAtransistor
The €1 is saturated.
Meter 1. 10 V
Meter 2: (5.95 mA)(680 f2) = 4.05 V
Meter 3: 4.05 V + 0.7 V = 4.75 V
Meter 4: 10 V — (5.95 mA)(1.0 kf2) = 4.05 V
(c) The 10 kf2 resistor is open. The transistor is off.

Meter I: 10 V
Refer 2: 0 V
Meter 3: 0 V
Peter 4: 10 V
(d) The 1.0 kf2 resistor is open. Collector current is zero.

Meter 1: 10 V
5.6 kf2 J 680 fI
7tfe/er 3: (10 V) + 0.7 V = 0.57 V + 0.7 V = 1.27 V
10 kfl + 5.6 kf2 J 680
Al V — 0.7 V = 0.57 V
Meter 2: 1.27
Refer 4: floating
(e) A short from emitter to ground.

Meter 1: 10 V
Refer 2: 0 V
Peter 3: 0.7 V
B= (10 V — 0.7 V) _ 9.3 V = 0.93 mA
10 kfl 10
C(min)' 35(0.93
kf2 mA) = 32.6 mA
10 V _
C(sat)'
1.0 kfl
The transistor is saturated.
Meter 4: - 0 V
(Q An open base-emitter junction. The transistor is off.

Meter 1: 10 V
;fe/er 2: 0 V
5.6 kf2
7ffeier 3: 10 V) = 3.59 V
\15.6 kni t'
Peter 4: 10 V
41
Chapter 5

34. With fii shorted:
B' 0 V, E' 0 V, <C' +Cc' 9+1 V
35. Faults that will cause the transistor of textbook Figure 5-30 to go into cutoff:
fi, openp, shorted, base lead or BE junction open.
36• PIN(base)' 70(470 ii) = 32.9 kf2

Rp — 2.7 kf2 J 32.9 kfl = 2.50 kf2
2.50
2.50 kCi
kf2 + 5.6 $5.IV
2.50 kf2 8.10 kf25.1V = 1.57 V
E' kf2 1.57 V — 0.7 V = 0.872 V
0.872 V _ 1.86 mA
470 II
c' 5.1 V — (1.86 mA)(1.0 kf2) = 3.24 V
37. The following measurements would indicate an open CB junction:

+c' cc' +9«1 V
GBnormal
E- 0 V
Data Sheet Problems
38. lN(base)
For 2.7 kul
T — 45°C and(30)(470
$2 i) = 2.7
2.7kflkCi
J 14.1 kf2 = 2.27 k ) min
'
2•7 kfl (300)(470 O) = 2.7 kf2 141 kf2 = 2.65 kfl mdX
IN(base 2.27 kf2
)'
B(min) ' 2.27
2.27 kCi + 5.6 kfl$9.1 V= $9.IV = 2.62 V
7.87
E(mi.) = 2.62 V — 0.7 V = 1.92 V
1.92 V
- 4.09 mA
470 f2
c( x)' 9.l V — (4.09 mA)(1.0 k£1) = 5.01 V
B(max) 2.65 kit V = 2.92 V

$9.1
2.65 kC1 + 5.6 kClJ
E(max 8.25 kf2
) = 2.92 V — 0.7 V = 2.22 V
2.22 V
470 II- 4.73 mA
9.1 V — (4.73 mA)(1.0 kf2) = 4.37
<c( »)'
V
42
Chapter 5
For T — 55°C
- 1.24 kf2:
and
IN(base) .24 kfl (30)(470 dl) = 1.24 kfl |J 14.1 kf2 = 1.14 kf2 min
' 1.24
(300)(470 fl) 1.24 kul 141 kfl = 1.23 kD ml
kf2 1.14
IN(base)
B(min) ' $9.l = 1.54
\1.14 kf2
kf2 + 5.6 V
'
kf2J
= 1.54 V — 0.7 V = 0.839 V
E(min)
0.839 V
= 1.78 mA
470 2
c(max) 9.1 V — (1.78 mA)(1.0 kD) = 7.32
V
'B(max) 1.23 kf2 = 1.64 V
\1.23 kfl + 5.6 $9.IV
kflJ
= 1.64 V — 0.7 V =0.938 V
E(max)
0.938
470 £1V - 2.0 mA
C(min) 9• I V‘ (2•0 mA)(1.0 kf2) = 7.10 V
'
39. At T — 45°C for minimum :
( ax)= (5.01 V — 1.92 V)(4.09 mA) = (3.09 V)(4.09 mA) = 12.6 mW
Dm
At T — — 55°C for minimum :
D(max) = (7.32 V — 0.839 V)(1.78 mA) = (6.48 V)(1.78 mA) = 11.5 mW
For maximum beta values, the results are comparable and nowhere near the maximum.
D(a) = 625 mW — (5.0 m/°C)(30°C) = 475 mW
m
No ratings are exceeded.
40. For the data sheet of Figure 5-51 in the textbook:

(a) For a 2N2222A, c( ) - 800 mA continuous
(b) For a 2N2l18, BE( .› = 5.0 V
for reverse breakdown or DBEm( ax)'
2›6 V for saturation
41. For a 2N2222 @ F= 100°C:

42. IfD(max)
c changes
' from 10.8
mA Wto—500 mAmW/°C)
(4.57 in a 2N2219, the percentage change in is
(100°C$30
— 25°C)
— = 0.8 W — 343 mW = 457
=—
mW 50 40%
Advanced Problems
43. See Figure 5-4.
RB Rc
D CC C Q 15 V — 5 286 kfl
pc ' - 2 kf2 2 kfl
V J E
C
Q '
Assume &c 5 mA
2N3903
100.
BQ'
’CQ _ 5 mA
V Figure 5-4
= 286 kCl
43
Chapter 5
+12 V
44. See Figure 5-5.
Assume &c '
200. 820 kf2
BQ'
’CQ _ 1#0 m A
Let GB200
= 1.0 kf2 2N39W
12 V — (50 QA)(1.0 kfl) —0.7 11.3 V
E' = 1.13 kf2
V 10 mA 10 Rz
12 V — (—12 V + 11.3 V + mA 1.2 kf2
8.7 V
' 4 V) 10 mA 10 = = 870 It
870
mAD and 1.13 kf1 are not standard values. c 820 D and
E' 1.2 kCl give cQâ 9.38 mA› CEQ '
5.05 mA.
—12
V
Figure 5-5
45. See Figure 5-6.

&c( »)- 70. Let BE= 1.0 kfL
E' JE E' 1.5 mA(1.0 kfl) =
1.5 V B' 1.5 V + 0.7 V =
2.2 V
’CQ 1.5
mA _ 9V
=
2.57 kf2 min
( — ICT 5 mA —1.5 mA
—1.5 V
Asssuming — 3 V -z›3 kfl
&cpE>>
A, _ 6.8 V - 3.09
A, 2.2 V
NJ' 3.09 z
i + z' z + 3.09fi2'
2.57 kf2 4.09 2' 2.57 kf2 +9 V
2 2.57 kf2
4.09 = 628 £2
So, $2 - 620 and p - 1.92 kf2 z 2 kf2.
From this,
IN'(base) 70(1.0 k f l ) = 70 kfl > 2
2N3904
SO, B' 620 Hi
2.62 $9V= 2.13 V
Rp
E' 2.13 V — 0.7 V = 1.43 Hz
l k£2
V 620
f2
1.43 V
- 1.43 mA
CEQ 9 V1.0
—kO(1.43 mA)(1.0 kf2 + 3 kfl) = 3.28
V Figure 5-6
'
44
Chapter 5
46. See
Figure 5-7. &c
+5 V
75.
BQ 10 mA
75 = 133 QA
CE _ 5 V —15. v
10 - 350 Ci (use 360 D)
CC
6.2 kf2
’CQ
mA
KCE— 0.7 V _ 1.55 V — 0.7 v - 6 kf2 (use 6.2 kf))
2N2222
BBQ 133 ,uA
CQ' 5 V —0.7 V = 9.71 mA
360 f2 + 6.2
CEQ' kf2/75 c' 5 V — (9.71 mA)(360 f2) = 1.50 V Figure 5-7
47. The 2N3904 in textbook Figure 5-49 can be replaced with a 2N2222 and maintain the same
voltage range from 45°C to 55°C because the voltage-divider circuit is essentially Q
independent and the &c parameters of the two transistors are comparable.
48. For the 2N2222 using the data sheet of Figure 5-51 and Figure 5-52
at c' 150 mA and +cE' 1.0 V:
At T — —55°C, F
t/E(mni)= (0.45)(50) = 22.5
At T — 25°C, /tFE(min) = (0.63)(50) = 31.5
At T — 175°C, bF•E(min)' (0.53)(50) = 26.6
49. If the ADC loading of the temperature conversion circuit changes from 100 kO to 10 kC1, the
Q-point will have a reduced +cEQ because the current through pc will consist of the same c
and a larger 2L- 2CQis unaffected in the sense that the transistor collector current is the same,
although the collector resistance current is larger. The transistor saturates sooner so that lower
temperatures do not register as well, if at all.
50. It is not feasible to operate the circuit from a 5.1 V dc supply and maintain the same range of
output voltages because the output voltage at 54°C is 7.06 V.

51. Rc open
52. GB open
53. open
55. c shorted
56. Base-emitter open
45
Chapter 6
BJT Amplifiers
Section 6-1 Amplifier Operation
1. Approximately 1 mA
2. From the graph of Figure 6-4, the highest value of dc collector current is about 6 mA.
Section 6-2 Transistor AC Equivalent Circuits

25 mV 25 mV
3. re 33
ZE 3 mA
4. J3„ — hfq —
200
5 Ic 130(10 ffA) = 1.3 mA
AcB '
1•3 EA
JE ' c 1.31 mA
0.99
Dc
re -— 25 mV = 19 D
ZE l.31mA
25 mV
6
15 /rA
.
AfC 0.35 mA = 117
AfB 3 QA
Section 6-3 The Common-Emitter Amplifier
7. See Figure 6-1.
22 kf2 2.2kO
2.2kM
4.7 kf2 l kf2 22 4.7 kCt
IcL2
dc equivalent ac equivalent
Figure 6-1
46
Chapter 6
4.7 kCi
8. (a) <B' 15 V = 2.64 V
4.7 kf2 + 22
kf2V — 0.7 V = 1.94
E' 2.64
V
re - 25 mV = 25 mV = 12.9 f2
ZE 1.94
in(base mA pr ’ 100(1012.9 f2) - 101 kf2
' e E)
)
+
(c) A — 2.2k
BE + re = 12.02 2 =217
9.
(a) $; ‹b › — j3„re’ 100(12 9 Cl) = 1.29
km (b) ;. = 1.29 kfl J 22 kf2 J 4.7 kf2 = 968

Hi
10. — —b ase@j
((c)) A in(
2.2
r e’ = 171 9 f2)' 1.29 kf2
100(12
(b) Rev — 1.29 kf2 J 22 kf2 J 4.7 kfl = 968 II
(c) A —
— =
140
12 kf2 J 75(1.0 kf2)
11 ( )
18 V = 3.25 V
. B' 1+ ‘2 J DC E 47 kf2 + 12 kfl J 75(1.0 kfl)
(b) E B— 0.7 V = 2.55
' V
E 2.55 V
- 2.55
(c) 2E'
7tE 1.0 kf2
(d) C E'
(
2.55 mA
12. (e) <c'Problem
From cc 11,c 2c'E 2.55 mA
18 V —
(2.55 mA)(3.3 kCl) = 25 mV - 70 25 2.55
mV = 686 f2
’E
9.59 V mA
(b) RiCE'— R, J fi 2CJ Ri n(bs e) 47 kfl J 12 kf2 J 686 D =
E'
640 f2
9.59 V r— 2.55 9.8
(d) A; V
—=ß 7.04
e
V
„ — 70 Ci 3.3 kCi J 10 kf2
= 253
(e) Ap A j (253)(70) =
17,710
47
Chapter 6
13. 12 V
{640 640 600 F2
Attenuation of the input network is
“in 640 f2
= 0.516
R+R
@ =R 0.516@ =640 CI + 600=f2131
0.516(253)
8 - 180°
’t 2 'J DC E 3.3 k€l J 150(100 8 V = 1.47

14.
I+ 2J DC E
D) ’CC
V
_ GB— 0.7 V _ 1.47 V — 0.7 12
V kf2 + 3.3 kF2 J 150(100 f2)
- 7.7 mA
*E
E 100 f2
25 mV 25 = 3.25 II
re -— mV
Z E 7.7 mA
330 D =3.2
RE + re 100 Al + 3.25 D
@ 330 f2 = 102
re 3.25 Hi
15. Maximum gain is at e 0 f2•
IN(base) C E' 150(100 Cl) =
' 15 kf2
pz J IN(base) 3.3 kf2 J 15
kf2)+ 3.3 kf2 J 15 8 V = 1.47 V
R, + 2J 12 kfl
IN(base) kf2)
E' ’B — KB M 1.47 V — 0.7 V
= 100 II = 7.7 mA
25 mV
re —- = 3.25 Al
7.7 mA
Minimum gain is at e 00 fl•
J $g = 212.9 f2 = 2.06
RE + re 103.25 f2
48
Chapter 6
16. Rin — J J fi2 J f:l„re’ —

— 3.3 kf2 J 12 kf2 J 150(3.25 Ci) = 410
II
R„ 410 2
= 0.5777
R„+ R 410 F2 + 300
II
£2 J 1.0 kf2
3.25 £1 = 76.3
@ = 0.5777@ = 0.5777(76.3) = 44
17. See Figure 6-2.

25 mV
- 9.8
2.55 mA
e 10 re
Set e' 00 1•
The gain is reduced to
re 09 8 Al 3.3
”e ”
Figure 6-2
kfl
= 30.1
Section 6-4 The Common-Collector Amplifier
’2
18. B 4.7 kfl
' 14.7 kf25.5 V = 1.76 V
— 0.7 V _ 1.76 V — 0.7 V

E ’B
= 1.06 mA
'
25 7t
mVE 1.0 kf2
re — - 23.6 f2
L06mA
A BE 1.0 kf2
=
—
—
0.977
R E + re 1.0 kf2 + 23.6 f2
OU B — 0.7 V 4.7
— 0.7 V = 14.7 5.5 V — 0.7 V = 1.06 V
T' =
20. The voltage gain is reduced because A

——
49
Chapter 6
A2 4.7 kfl
21. B 5.5 V = 1.76 V
' 14.7 kf2J
KBE _ 1 .76 V — 0.7 V 1 06
’
1.0 kf2 mA
E
25 mV 25 mV -
23.6
’E 1.06 mA
A—
—
Ar
0.9(23.6
’e @)
(1 — 1 — 0.9 = 212.4 f2
E' 212.4Aø + 212.4 E
£ E 212.47tø = 212.4 E
212.4AE
(212.4 Hi)(1000 i)
=
22. (£t) 10 V
ct270
' II
2
BI ' BE — 212.4 ’CC 10 VII= 4 V
1000 Al — 212.4
E1' BI — 0.7 V = 4 V — 0.7 V = 3.3
V
<cz' 10 V
B2' E1 - 3.3 V
E2' B2 — 0.7 V = 3.3 V — 0.7 V =
2.6 V
Ø) dÔ ' &ciO›cz' () 50)(100) =
15,000
(C)
E1' DC2
E K 'E _(100(1.5
3.3 kf2)
V
25 mV _ 25 mV
re, —- 1.14 kØ
ZE , 22
QA
E2 2.6 V _
E2
' BE 1.5 1.73 mA
kf2mV
25 25 mV
r
e2 — = 14.5 O
1.73 mV
1 E2
in(baseI) eel ac2 E' (150)(100)(1.5 k fl ) = 22.5

MW
R;v — 33 kf2 J22 kf2 J22.5 Mai = 13.2 kf2
50
Chapter 6
23• in(base) net ac2 E' (150)(100)(l .5 kf2) = 22.5 Mf2
R, — fi 2 J fi, J Ri „e — 22 kf2 J 33 kf2 J 22.5 Mfg = 13.2 kf2
1V
13.2 = 75.8
kf2
= 44.4 nA
e - act ac2 in(baseI) (150)(100)(44.4 nA) = 667

QA
Section 6-5 The Common-Base Amplifier

24. The main disadvantage of a common-base amplifier is low input impedance. Another
disadvantage is unity current gain.
’2
25. E CC BE 24 V — 0.7 V = 6.8 V
' 3k
'
' /E 6.8 V
620 - 10.97 mA
Hi 25 mV 25 mA
in(eminen = r e - = = 2.28
) ZE 10.97 mA
Hi
,2 kf2
A—
— 2 28 = 526
re
c f2
26. (a) Common-base (b) Common- (c) Common-collector

emitter
Section 6-6 Multistage Amplifiers
27. Ay’— A iA z' (20)(20)' 400
28. @( = 10 dB + 10 dB + 10 dB = 30 dB
20 log A’30—
— 30 dB
log A’—
— =
201.5
A’ —
31.6
51
Chapter 6
29. ’2
— 0.7 V = 2.29
(a) 33 kf2 + 8.2 kflJ V
KE_ 2.29 V
= 2.29 mA
7tE 1.0 kf2
25 mV
25 mV 2.29mA = 10.9 Al
= 93.6
3.3
A v2'
= 302
re 10.9 D
(b) A’ A Av2 (93.6)(302) =
28,267
(c) A p) — — 20 log(93.6) = 39.4 dB
A. («› = 20 1og(302) = 49.6 dB
A’(p) 20 log(28,267) = 89.0 dB
in(2)
3.3 kf2 J 1.48 kf2
30. (a) = 93.6
re 10.9 II
“c
A v2 =
255
(b) R —— fi, J R J r’ — 33 kf2 J 8.2 kf2 |J 175(10.9 Al) = 1.48

kf2
fi„(,) + RS„(i) 1.48
_ kf2 1.48
+ 75 kf2
II = 0.95
A' — (0.95)A,n4,t = (0.95)(93.6)(255) = 22,675
(c) A (p) —
— 20 log(93.6) = 39.4 dB
A. («› = 20 log(255) = 48.1 dB
A’s — 20 log(22,675)
= 87.1 dB
31. BI ’CC 22 kfl
122 kflJ12 V = 2.16 V
'
' BI — 0.7 V = 1.46
V
1.46 V
fi4
El 4.7 - 0.311 mA
Cl' CC kf2
Cl 3' 12 V — (0.311 mA)(22 kD) =
5.16 V
B2' CI' 5.16 V
E2' B2 0.7 V = 5.16 V — 0.7 V = 4.46 V
52
Chapter 6
KE2_ 4.46 V
= 0.446 mA
cz' cc cz s' )2 V — (0.446 mA)(10 kf2) = 7.54

rV —
25 mV 25 mV = 56 D
e2
SE C
0.446 mA
in(2= fl„r
e2
)' (125)(56 H) = 7 kf2
r z 25 mV = 25 mV = 80.4 H
e
' Z, E 0.311mA
= 66
10
56 f2 = 179
re2 (66)(179) = 11,814
32. Av2
(a) ' 20Alog(12) = 21.6 dB
(b) 20 1og(50) = 34.0 dB
(c) 20 log(100) = 40.0
dB
(d) 20 log(2500) = 68.0
dB
33. (a) 20 log 2 = 3 dB (b) 20 log ’2
= 6 dB (c) 20 log = 10 dB
i
log = 0.15 log = 0.3 log = 0.5

K, 20 U, 20
2 = 2
= 1.41 = 3.16
2
(d) 20 log 2 = 20 dB (b) 20 log — = 40

dB
K2 40
lOg log =2
K, K,
20 20
’ = 100
2
„ ro
53
Chapter 6
34. ' 10 V —0.7 V V — 0.7 V = 1.05

V
KE_ 1.05 V
fi4 1.0 kf2= 1.05 mA
c' )0 V — (1.05 mA)(4.7 kf2) = 5.07
CE' V
5.07 V — 1.05 V = 4.02 V
4.02 V
rcE CE
/ E 1.05 - 3.83 kf2
mA
With Co shorted:
IN(2)' 6 JMDCC - 10 kf2 J 125(1.0 kf2) = 9.26 kf2

Looking from the collector of Q :
(rcE+ fi4 )|| 7tp (2)kf2
3.17 =(3.83 kf2 +1.0 kf2)J 9.26 kfl = 3.17 kf2
'
\3.17 kf2 + 4.7 $10 V = 4.03 V
ci
kflJ
35. Q is in cutoff. c' 0 A, so <C2 10 V.
36. (a) Reduced gain

(b) No output signal
(c) Reduced gain
(d) Bias levels of first stage will change. +c will increase and Q will go into saturation.
(e) No signal at the Q collector
(f) Signal at the Q base. No output signal.
37. R; — — 1.48
kf2 A z'
302
lH°"! \"i i4Zi*«.âi1 é \ P / / & * E A “ i*"'
i’›
Input 0V 25 QA
Q base 2.99 V 20.8 yV
Q emitter 2.29 V 0V
Q collector 7.44 V 1.95 mV
Q2 base 2.99 V 1.95 mV
Q emitter 2.29 V 0V
Q collector 7.44 V 589 mV
Output 0V 589 mV
54
Chapter 6

38. For the block diagram of textbook Figure 6-40 with no output from the power amplifier or
preamplifier and only one faulty block, the power amplifier must be ok because the fault must
be one that affects the preamplifier's output prior to the power amplifier. Check the input to
the preamplifier.
39. For the circuit of textbook Figure 6-53, the dc and ac operating
parameters are 15 kfl
9 V = (0.181)9 V = 1.63 V
83
E' kf2 V — 0.7 V = 0.93
1.63
V
E1= 92725QA
mV
re — = 27 f2
927 QA
2.2 kC1
A ' 27 = 81.5 unloaded
CI 22 kf2 J (200)(1.22 kfl)
B2 9 V= 0.81
' 100 kf2 + 22 k 1 J (200)(1.22 kf2) V
k'
E2' 1022 = 665
QA
25 mV
re — 665 = 37.6 f2
QA
_ 4.7 kf2
A' 2’ 220 Ci + 37.6 2 = 18.2 unloaded
in(z)' 100 kf) 22 kf2 J (200)(288 Al) = 13.7 kf2
So, the loaded gain of Q is equal to
13.7 kf2
13.7 kf2 + 2.2 = 0.862 of the unloaded gain
kf2
(a) With C open, the input circuit is developed in Figure 6-3.
From this,
A—
—
2.2k/l
= 27.1 unloaded
10k 27 + (68 5 ) 200
Figure 6-3
55
Chapter 6
The loading factor is unchanged and stage 2 is unaffected so the overall ac gain is
@ = (0.862)(27.1)(18.2) = 425
ouqz)' 2 ITlV(425) = 850 mV rms
9 V — (4.7 kf2)(665 QA) = 5.87 V
c(z)'
dc
(b) If C, is open, no input is applied so
<••«z›' 0V
C(2)' 5.87 V
(c) If C3 is open, no signal is coupled to Q2

U»tz) = 0 V
c(z)' .87 V
(d) If 4is open, the gain of stage 2

fi _ 4.7 kf2
A
changes to 7 = 3.74
—— r’e! 2) + 37.6 Al + 220 £2 + 1.0
ou#2)'+ (2 mV)(27.1)(3.74)
kf2 = 203 mV rms
c(z)' 5.87 V
(e) If the Q collector is internally open, no signal reaches the base of Q

V„ — 0 V
ctz)' 3•87 V
(f) If the Q emitter is shorted to ground, the transistor saturates.

V„ — 0 V
c(z)' 0
V
220 kfl J (200)(1.22 kfl)
40. B 9 V = 4.83
2' 100 kf2 + 220 kf2 J (200)(1.22 V
E' 4.83kf2)
V — 0.7 V = 4.13
V
3.38 mA
4.13 V
1.22
kF2
25 mV
r’e — 3.38 mA= 7.39 f2
c(z)' 9 V — (4.7 kf2)(3.38 mA) = —
6.9 V
The transistor is saturated, so U„, = 0 V.
C(2)' $9 V = 1.85
1.22
5.92 kkf2J
V
41. (a) Q is in cutoff.
(b) cci' 9V
(c) Kp is unchanged and at 5.87 V
56
Chapter 6
Data Sheet Problems
42. From the data sheet in textbook Appendix C:
hfp pj 100
(a) for a 2N3947, Qpc(min)'
cannot be determined since h q is not
(b) For a 2N3947, r’e(
given.
(c) For a 2N3947, r’(
cannot be determined since hre( miv)is not given.
43. From the 2N3947 data sheet in Appendix C:
(a) For a 2N3947, Q p( g) = 700
(b) For a 2N3947, r’¿p

e h
-- re
20 X10“ = 40 D
he 50 ps
(c) For a 2N3947, r’(p -- ’re + '
20 10“ = 20 kD
hue 50 + '
ps
44. For maximum current gain, a 2N3947 should be used.
45. In the circuit of textbook Figure 6-53, a leaky coupling capacitor would affect the biasing of
the transistors, attenuate the ac signal, and decrease the frequency response.
46. See Figure 6-4. Vo
Q2
R 6 kg 7
2.2 22 k 1 220 fl 4.7 kC1
k£2
AC equivalent circuit
9V
R Rz R
6s kn 2.2 kfl 4.7 kf2
Q2
kg
22 kfl 220 £2
DC equivalent circuit
Figure 6-4
57
Chapter 6
47. See Figure 6-
5. —9V
A Ay /t7
2.2kG 100 k0 4.7 IcO
C3
Q2
10 jiF
E 6
221
10 jiF C4
t00 }tF
Figure 6-5
48. c > (100)(330 f2) = 33 kfl

To prevent cutoff, c must be no greater than
12 V — (100)(1.414)(25 mV) = 8.46 V
In addition, <c must fall no lower than 8.46 V — 3.54 V = 4.93 V to prevent saturation.
c' 100(°E + re')
25 mV
re —
—
’E
12 V — c c' 8.46
V c c' 3.54 V
c (100(fip -b re’ ))
25 mV
ZC 100 330 €2 + 3.54
’C
V3 54 V
(33 ) c + 2.5 V' 3.54
V
c 31.4 QA
25 mV
re — = 797 f2
31.4 QA
c )00(330 D + 797 D) = 113 kCl
Let
' c' )20 kf).
c 12 V — (31.4 QA)(120 kf2) = 8.23
' V 8•23 V 3.54 V = 4.69 V
<c(sat)'
4.69 V
$ t t)
7.31V
@
= (0.642)(120 kf2) = 77 kf2. Let BE = 68 kf2.
fiEE'„ (31.4 QA)(68 kf2) =

2.14 V B' 2.14 V + 0.7 V
t, = 2.84 V
z 2•84 V
- 0.310
R, 9.16 V
2' 0.3l0fiJ. If R — 20 kb ›
z' 6.2 kf2.
The amplifier circuit is shown in
Figure 6-6.
58
Chapter 6
The amplifier circuit is shown in Figure 6-6.
From the design:

12 V
6.2k
12 V = 2.84 V
20 kf2 120 kfl
26.2kO
E' 2.14 V
2.14 V o,
68.3 kD= 31.3 QA 2N2222
25 mV
r - 798 f2 25 mV 2 BE
e 6.2 kf2 330 0
31.3 QA
120 $E2 ‹
A = 106 or 40.5 dB 68 CE
—— kCi 795 k£2

c 122 +V330
—D (31.3 QA)(120 kf2) = 8.24
The
' design
V is a close fit.
Figure 6-6
49. See Figure 6-7.
ni = 120 km 120 kf2 (100)(5.lkfl) = 53.6 kf2 minimum

10 V t0V
R
t20k 120 kit
2N3904
Hz
120 k£2
Figure 6-7 Figure 6-8
50. See Figure 6-8.
51. See Figure 6-9.

6 V — 0.7 V
= 10 mA
510 f2 + 2 2N3904
kf2/100
25 mV
e - 10 mA= 2.5 Al
r’ —
Rq
180 D
A = 72.4 180 f2
—
— 2.5 f2 2 kf2
This is reasonably close (-3.3% off) and can -6V 6V

be made closer by putting a 7.5 Al resistor in
series with the 180 Al collector resistor.
Figure 6-9
59
Chapter 6
52. The cutoff frequency of Cz is
= 0.45 Hz
2c(10 QF) 22 k€2 + (100 kI2 J 22 kf2 J (200)(220 D + 33 II))
The cutoff frequency of Co is
1
2c(10 QF)(1.0 kf2 J 27 Ci) = 606 Hz
2must be increased to
1
2c(10 Hz)(1.0 kD J 27 Ci) = 606 QF (nearest standard value is 680 QF)
A = 40Kqg
—
—

54. Co open
55.
C shorted
56. fig
leaky
57. Cl open
58. open
59. C open
60
Chapter 7
Field-Effect Transistors (FETs)
Section 7-1 the zFzr
1. (a) A greater pcs >*rrows the depletion region.
(b) The channel resistance increases with increased pcs-
2. The gate-to-source voltage of an n-channel JFET must be zero or negative in order to

maintain the required reverse-bias condition.
3. See Figure 7-1.

D D
S S
n-channel p-channel
Figure 7-1
4. See Figure 7-2.

+Vpp
Figure 7-2
Section 7-2 JFET Characteristics and Parameters

5. <»S' <P' 5 V at point where JD becomes constant.
6• SGS(of1)' p' —6 V
The device is on, because <G' 2 V.

7. By definition, D JD when <G 0 V for values of ODS> P
Therefore, D = 10 mA.
8. Since pcs > GS( , the JFET is off and 2D' 0 A.
61
Chapter 7
9• P' GS(off)' (—4 V) ' 4
The
V voltmeter reads ADSL As DD is increased, ODSalso increases. The point at which JD
reaches a constant value is ODS = ' 4 V.
10•
D' Dss l GS(off)
_
lV = 3.83 mA
-8V
D' 5 mA$1 — = 2.81 mA

-8V
2V 3
= 1.95 mA
V)2
-8V
4V
D' 5 mA 1 — = 1.25 mA
-8V
5V
= 0.703 mA
-8V
6V
q2 = 0.313 mA
-8V
D' 5 mA 1 — = 0.078 mA
-8V
7V -8
D' 5 mA 1 —
-8 5
See Figure 7-3.
4
—VGS(V)
—8 - —6 —5 —4 —3 —2 — 0
7 1
Figure 7-3
62
2
’GS
11. D'
’ DSS
GS(off)
’D
GS(off) ’DSS
’GS _ _ ’D
Gs(off) J
Dss
GS' GS(off) I — ’D
’DSS
GS' —8 V 1 = —8V(0.329) = —2.63 V
12’GS g• — g.o —
l —4V
= 3200 QS l —-8V =
. GS(off)
1600
= 2000 QS 1 ———7 2 V =
'3. g•——g.'— cstor9
’GS
1429 V
14. R = 2000 Mf2

——
’GS
= 8 mA(1 — 0)° = 8
GS(of1) mA
l ——5
—1V = 8 mA(1 — 0.2)2 = 8 mA(0.8)2 = 5.12 mA
GS' - 1V: D' 8
V2 V
— 2
GS' —2 V: D' 8 mA1 — = 8 mA(l — 0.4)2 = 8 mA(0.6)2 = 2.88 mA

—5
V 3
—
GS' —3 V: D' V = 8 mA(1 — 0.6)2 = 8 mA(0.4)2 = 1.28
8 1 ——5 mA
V 2
—4 = 8 mA(1 — 0.8)2 = 8 mA(0.2)2 = 0.320 mA

V
—5 V
GS' —5 V: D 2 5
— = 8 mA(1 — 1)2 = 8 mA(0)2 = 0
= 8 1— V mA
—5V
Section 7-3 JFET Biasing

16. GS' — &s ' —(12 ITIA)(100 Cl) = —1.2 V
63
Chapter 7
G
4
17. s' = 800 II
’D
V
GS
3
18. ' s = 1.2 kf2
’D
V
25
19. (a) ID' DSS' 20 mA
) D' 0A
(c) 2D increases
20. (1 mA)(1.0 k ) = 1 V
) s' (5 1TIA)(100 O) = 0.5 V
s'
(a) D' 9 V — (5 mA)(470 Ci) = 6.65
D' 12 V — (1 mA)(4.7 kfl) = 7.3 V
V G' 0V
G' 0V rcs ' xc — r = 0 V — 0.5 V = —o.5
GS' G S' 0 V — l V = —1 V V
(c) s' (—3 mA)(470 2)' —1.41 V
7.3 V — 1V = 6.3 V Ds' 6.65 V — 0.5 V = 6.15 V
DS
D' —15 V — (3 mA)(2.2 kD) = —8.4 V
G' 0 V
GS' G S' 0 V — (—1.41 V) =
DS' 1.41 V
—8.4 V — (—1.41 V) = —6.99 V
21. From the graph, cs —2 V at JD' 9.5 mA.
= 211
£2
22. D Dss _ 4 mA = 7 mA
' 2 2
cs(off)2 V 10 V
GS = —2.93 V
' 3.414 9.5
Sinc'e <G
3.4140 V, = G•
#s 2.93 V
GS
/D 7 - 419 II (The nearest standard value is 430 f2.)
'
mA
KDD KD_ 24 V —12V
ID 7 = 1.7 kf2 (The nearest standard value is 1.8 kf2.)
+24 V
mA
Select VG' 1.0 Mf). See Figure 7-4.
Figure 7-4
64
Chapter 7
10
= 500
V
MW
fip(qgt)’GSS
= 10 Mf220J 500 MW = 9.8 MU
24. For D = 0
' GS ' S (0)(330 D) = 0 V
For 2D -' D S 5 mA
pcs' Hs ' —(5 mA)(330 2) = —1.65 V
From the graph in Figure 7-61 in the textbook, the Q-point is
GS - —0.95 V and ID 2.9 mA
25. For 2D' 0,

GS' 0 V
For ID - JDSS' 10 mA,
GS' —2Os' () 0 mA)(390 ii) = 3.9 V
From the graph in Figure 7-62 in the textbook, the Q-point is
GS- 2.1 V and /p - 5.3 mA
26. Since Uqp = 9 V — 5 V = 4 V
D'
I D 4.7 kO
s' 2Os ' (0.85 mA)(3.3 kf2) = 2.81 V
2.2 Mfg
’D D '’
}12.2 MOU $9 V = 1.62 V
GS' G S' 1.62 V —
2.81 V = —1.19 V Q-point: D'
0.85 mA, GS' —1.19 V
27. For 2s = 0
’DD 12 V = 4.8 V
For SGS' 0 V, s' 4.8 V

48.
*s 1*G I GSA _
V
= 1.45 mA
s 3.3
The O-point is taken from
kCithe graph in Figure 7-64 in the textbook.
D 1.9 mA› GS'
—1.5 V
Section 7-4 The MOSFET

28. See Figure 7-5.
n-channel D-MOSFET p-channel D-MOSFET n-channel E-MOSFET p-channel E-MOSFET
Figure 7-5
65 ’***’*"
*"”*
29. An n-channel D-MOSFET with a positive <Gis operating in the enhancement mode.
30. An E-MOSFET has no physical channel or depletion mode. A D-MOSFET has a physical
channel and can be operated in either depletion or enhancement modes.
31. MOSFETs have a very high input resistance because the gate is insulated from the channel by
an SiO2 layer.
Section 7-5 MOSFET Characteristics and Parameters

32. (a) n channel
2
) D'
’GS —: = o »n
’DSS l —
GS(off) —
5
5 2
— 4V $ 3
2 = 0.32 mA D' 8 mA 1 = 1.28 mA
—5 — —V
V 5—1
ID = 8 mA 1 — 2 V = 2.88 mA D' 8 mA 1 —
—
2
OV 5
Am8-
-3V
2
2V $ 3V
\2
= 15.7 = 20.5 mA
—5 mA —5
p2
Vd
4
5V
i D= 8 1 = 25.9 = 32 mA
— mA —5
V
(c) See Figure 7-6.
32
24
16
0 2 4 cs(V
Figure 7-6
66
Chapter 7
’GS
#3. D' ’DSS '
GS(off)
DSS' = 4.69 mA
1
—
34. K— = 0.12 mA/V2

(KG3 — KGS( ))°
(—12 V + 3 V) 2
JD' I( GS GS(ofQ) 2' (0•12 mA/V )(—6 V + 3 V)2 =
1.08 m A
Section 7-6 MOSFETBiasing

35. (a) Depletion
(b) Enhancement
(c) Zero bias
(d) Depletion
10 MCI
36. (a) pcs' 10 V = 6.8 V This MOSFET is on.
14.7
MC1
(—25 V) = —2.27 V This MOSFET is off.
1.0 MH
11MF2
37. Since G ' 0 V for each circuit, 2D = 8 mA.
(a) OD DD 2DSSAND' 12 V — (8 mA)(1.0 kf2) = 4 V
S'
(b) pDs' AD D' 15 V — (8 mA)(1.2 kit) = 5.4 V
D
38.
(C)
(a)
DS' DD D' —9 V— (—8 mA)(560 O) = —4.52 V
3 mA @ 4 V9
GS(th) =2 V
D(on)'
’2
GS' ’DD 4.7 MH
l+ 2 14.7 MH10 V = 3.2 V
3 EA _ 3 mA
’D
on() = 0.75 mA/V2
(4 V — 2 V) 2 (2 V) 2
2
D' I( GS ( UqGS(G))
S = (0.75 mA/V2)(3 .2 V — 2 V)2 = 1.08 mA
DD — 2' 10 V — (1.08 mA)(1.0 kD) = 10 V — 1.08 V = 8.92
DS' — K p, ))
ID G h V
) D(on)' 2 mA @ 4 V9 GS(th) = l .5 V
’2 10 MW
GS ’DD 5 V = 2.5 V
' 20 M i
’D(on)
2 mA _ 2 mA
2 = 0.89 mA/V 2
(*G—S *Gs( )) (3 V — 1.5 V)2 (1.5
2
/D' I( GS GS(th))2=V)
(0.89 mA/V')(2.5 V — 1.5 V)2 = 0.89 mA
DS' DD D' 5 V — (0.89 mA)(1.5 kit) = 5 V — 1.34 V =
3.66 V
67
Chapter 7
39. («) ODS' GS' 5 V
ADD KDS _ 12 V — 5 — 3.18
I DV mA
2.2 kf2
(b) DS' GS' 3.2 V
V —3.2 V -
’ 4.7 kfl
D
1.02 mA
40. DS' DD D' 15 V — (1 mA)(8.2 kCi) = 6.8 V
GS' DS JG G' 6.8 V — (50 pA)(22 MC1) = 6.799
V
41. When IDgoes to zero, the possible faults are:
ID or open, JFET drain-to-source open, no supply voltage, or ground connection
open.
42. If 2D goes to 16 mA, the possible faults are:

The JFET is shorted from drain-to-source or DD has increased.
43. If ADD is changed to —20 V, D will change very little or none because the device is operating
in the constant-current region of the characteristic curve.
44. The device is off. The gate bias voltage must be less than <Gth)-The gate could be shorted or
partially shorted to ground.
45. The device is saturated, so there is very little voltage from drain-to-source. This indicates
that SGSis too high. The 1.0 MCI bias resistor is probably open.

46. With the 100 QF capacitor open, power supply noise or ripple could affect the sensor outputs,
producing false readings and alarms.
47. From the graph in textbook Figure 7-53:

For pH = 5, U = 300 mV
For pH = 9, K = —400 mV
48. A possible problem is that the voltmeter has an input resistance of 1 MW) instead of 10 Mf2
and is loading the sensor output.
49. Koirr = 15 V — (2.9 mA)(1 k l) 15 V — 2.9 V = 12.1 V
Data Sheet Problems

50. The 2N5457 is an n-channel JFET.
68
Chapter 7
51. From the data sheet in textbook Figure 7-14:
(a) For a 2N54579 SGS(off)' 0.5 V minimum
(b) For a 2N5457, Kpq ,) = 25 V
(c)
For a 2N5458 @ 25°C, ID(max)' 310 mW
(d)
For a 2N54599 SGS(rev)' 25 V maximum
52.
D(ma). = 310 mW — (2.82 mW/°C)(65°C — 25°C) = 310 mW — 113 mW = 197
mW
53. g o( •› y, —
—
2000
54. Typical ID JDSS
9
55. From the data sheet in textbook Figure 7-
41:
Minimum SGS(th)
56. For a 2N7008 with SGS' 10 V, D' 500 mA
57. From the data sheet graph in textbook Figure 7-52:

It GS' +3 V, 2s
13 mA At GS' —2
V, D = 0.4 mA
58. yf, — 1500 QS a t / = 1 kHz and atf= l MHz for both the 2N3796 and
2N3797. There is no change in yf, over the frequency range.
59. For a 2N37969 SGS(off)' 3.0 V typical
Advanced Problems
60. For the circuit of textbook Figure 7-71:
’GS where G '
D'
’DSS —
1
GS(off) J&
From the 2N5457 data sheet:
DSS( i › = 1.0 mA and SGS(off)' D' 0.5 V minimum
66.3
GS' —(66.3 )(5.6 kf2) = —0.371 V
DS' 12 V — (66.3 )(10 kC1 + 5.6 kC1) = 11.0
61. V the circuit of textbook Figure 7-72:
For
= I 3.3 kf2V = (0.248)(9 V) = 2.23 V

13.3
From the equation,
’GS
D' ’DSS where pcs' +G
S
' ’GS(o#
ID is maximum for XDMS( ,) and SGStoff) lTiax, so that
JDSS' 16 mA and SGS(off)' 8•0 V
D' 3.58 mA
GS' 2.23 V — (3.58 mA)(1.8 k ) = 2.23 V — 6.45 V = —
4.21 V
69
Chapter 7
62. From the 2N5457 data sheet:
DSS(min) = 1.0 mA and SGS(off)' —0.5
minimum
D(min) = 6 6 . 3 Q A
DS(max)= 12 V — (66.3 QA)(15.6 kf2) = 11.0 V
and
DSS(max )' Q
A 50. m
A and GS(off)' 6.0
D(ma). =
ma
677 x i m u m12 V — (677 QA)(15.6 kf2) = 1.4
V
63. Dst+i»)
pH' '+300 IV
D' (2.9 mA)(1 + 0.3 V/5.0 V)2 = (2.9 mA)(1.06) 2 = 3.26 mA
D 15 V — (3.26 mA)(2.76 kf2) = 15 V — 8.99 V = +6.01
s' V
2
(1mA)@
64. Ds
l mA' GS(off)
s
2
_ (1 mA)@
1 mA = 2.9 mA
— 0.5 V
0.345 = 1 —
-0.3V
0.587 = 1 — ‹ )n
- 0.5 V
0.413 =
1 mA)@
—0.5 V
s' 2.06 kf)
Usep 2.2 kf2.
Then JD' 963 QA
GS' S' (963 QA)(2.2 kfl) = 2.19
SO,
V D 2.19 V + 4.5 V = 6.62
V '
9 V — 6.62 V
963,uA - 2.47 kf2
Use ID 2.4 kf2.
SO, DS' 9 V —(963 QA)(4.6 kCi) = 4.57 V
70
Chapter 7
65. Let 2D' 20 mA.
4V
D
20 mA= 200 CI
Let 2 V.
2V
= ioo n
20 mA
For the 2N7008:
’D(on) 500 mA
2
= 6.17 mA/V2
(’ GS(on) 2 (10 V — 1 V)
Let /pGS(th))
— 20
mA.
)2 _ 20 V
(rGS — i v 6.17 mA/V 2 = 3.24
G 1 V = 1.8 V
GS'
S 2.8 V
G' S + 2.8 V = 4.8
V
For the voltage divider:
A, _ 7.2 V 1.5
A2 4.8 V
Let - 10 kf2.
R — (1.5)(10 kit) = 15 kf2

66. shorted
67. ID shorted
68. VG shorted
69. fi, open
70. Drain-source open
71. ID open
72. $2 shorted
73. Drain-source shorted
74. fi, shorted
71
Chapter 8
FET Amplifiers
Section 8-1 FET Amplification
1. (a) 2D goV, = (6000 QS)(10 mV) = 60
H) 2D = go gs (6000 QS)(150 mV) = 900
(c) JD goV , — (6000 QS)(0.6 V) = 3.6
mA
(d) D = goV, — (6000 )(l V) = 6 mA
2. A — god
@ _
gg = 5.71 kf2
3500 QS
20
kit)(12 k l
3. A= Drys ) 4.2 mS = 14.2
’D + r 16.7
4. Rd = I Dkf2
J mr s —— 4.7 kf2 J 12 kf2 = 3.38 kC1
A _ g.•d _q (4.2 mS)(3.38 kf2) =
2.73
l + gpfi, 1 + (4.2 mS)
(1.0 kf2)
0 V.
GS'
Section(b)8-2 Common-Source
I*-channel Amplifiers
JFET with self-bias.
GS' S' (—3 mA)(330 D) = —0.99 V
5. (a) N-channel
N-channe1 E-MOSFET
D-MOSFETwith
withvoltage-divider
zero-bias. bias.
“2 4.7 kf2
(c) V = 3.84 V
+ 14.7
6. (a) G' 0 V, S' 0V

D' D 15 V — (8 mA)(1.0 kfl) = 7
DD V
#) G' 0V
S' —(3 mA)(330 Ct) = —0.99 V
D'— <nD —
<o —10 V — (—3 mA)(1.5 kf2) = —5.5
&o V
(c) 4.7 kf2

' ’12 V= 3.84 V
14.7
D' D 12 V — (6 mA)(1.0 k l) = 6
DD V
72
Chapter 8
7. (a) n-channel D-MOSFET
(b) n-channel JFET
(c) p-channel E-MOSFET
8. From the curve in Figure 8-18(a) in the textbook:

dtpp 3 •9 mA l.3 mA = 2.6 mA
)
9. From the curve in Figure 8-18(b) in the textbook:
Q@p) — 6 mA 2 mA 4 mA
From the curve in Figure 8-18(c) in the textbook:
dppl 4•5 mA 1.3 mA' 3.2 mA
10. D' DD D' 12 V — (2.83 mA)(1.5 kf2) =

s' Os ' 7.76 V
DS' D (2.83 mA)(1.0 kf2) = 2.83 V
S' 7.76 V — 2.83 V = 4.93 V
GS' G S' 0 V — 2.83 V = —2.83 V
11. A —g 5000 ps(i.s in || 10 kfi) - 6.52
z— g.(**D 1
p y( (2•828)(50 mV)(6.52) = 920 mV
12. °=),
A — (5000 QS)(750 f2) = 3.75

V„, - A V — (3.75)(50 mV) = 188 mV rms
13. (a) A - ggRz — gg SRDJ fi,)= 3.8 ms(i.2 kfi | 22 kCi) - 3.8 mS(1138 f2)
= 4.32
@) A — ggRd — gg(I D |J fi,)= 5.5 >s(2.2 kfi || 10 kfi) - 5.5 mS(1.8 kf2) = 9.92
14. See Figure 8-1. +15 V
820
f2
820 33 kfl
10 Mf2 220 f2 10 Mfl f2
dc equivalent ac equivalent
Figure 8-1
Dss
15. 15 m A
=7.5mA
2 2
73
Chapter 8
16. GS' (7.5 mA)(220 CI) = 1.65 V

2J Dss 2(15 mA)
8 m0 = 7.5 mS
Gs(off) 4V
gg -- (7.5 mS)(1 -- 1.65 V/4 V) = 4.41 mS
q gq pp qq(4.41 mS)(820 II J 3.3 kf2) _ (4.41 mS)(657
A
O) = 1.47
I + gp@ 1+ (4.41mS)(220 II) 1+ 0.97
17. Ay -- gm d (4.41mS)(820 Al J 3.3 kf2 J 4.7 kf2) = (4.41 mS)(576 D) = 2.54
18.
GS' S' --(4.5 mA)(330 Ci) = --1.49 V
DS' D( D + S) = 9 V -- (4.5 mA)(1.33 kCi) = 3
DD V
19. A -- cmd -- gp( » J fig)= 3700 ps(i.0 kf2 | 10 km) = 3700 QS(909 D) = 3.36
Vpy) -- Ay in-- (3.36)(10 mV) = 33.6 mV rms
a, 6.8k
20. GS' ’DD 20 V = 5.48 V
R\ + z
24.8kO
K -- ’D(on) 18 mA
= 0.32 mA/V2
(KGS -- KGS ¿th) ) 2 (10 V -- 2.5 V) 2
D= ( GS GS(1h))2= 0.32 mA/V (5.48 V -- 2.5 V)2 -- 2.84 mA
DS' D' 20 V -- (2.84 mA)(1.0 kfl) = 17.2 V
DD
21. = 600
MW
in -- 10 MW 600 MF2 = 9.84 Mf2
22. A -- end -- 48 as(i.0 kfl || 10 MCl)i

4.8 - A V; - 4.8(10 mV) = 48 mV rms
V
„ DSS' 15 mA
D'D' 24 V -- (15 mA)(1.0 kCl) = 9
V
See Figure 8-2.
9X8V +68 mV
9Y OV
8.932 V --68 mV
Figure 8-2
74
Chapter 8
’2 47 in v - v
23. G ’DD
S' A,+4 2 94 kfl
’D(on) 8 mA
2 = 0.125 mA/V°
( GS
GS(th)) 2
GS GS(th))(12= V )2
— 4 VmA/V
0.125 2
(9 V — 4 V) 2 = 3.13 m A
D(on)' I(
D 18 V — (3.125 mA)(1.5 kD) = 13.3
ADS— gmDDD' V 4500 (1.5 kf2) = 6.75
V@ — Ay in— 6.75(100 mV) = 675 mV rms
Section 8-3 Common-Drain Amplifiers
24. fi, = 1.2 kf2 J 10 Mfl - 1.2 kC1
A—
— e:.• _ (5500 QS)(1.2 kf2) =
0.868 —15
KGS =3
ss R V
1+Ggp 1 + (5500 QS)(1.2
kf2) 50 pA
25. 7t, = 1.2 kf2 J 10 Mfg 10

MCi q gp R
A = 0.783
(3000 QS)(10 MW) 1+ gg R
l + (3000 QS)(10 M£2)
’GS _ —15 V
- 3 X10'' Ci
50 pA
’GSS
26. (a) fi, = 4.7 kf2 J 47 kf2 = 4.27 kf2
gp R
A — l + gg’——
(3000 QS)(4.27 kfl) = 0.928
- R 1+ (3000 QS)(4.27 kf2)
(b) s •0 kf2 100 D = 90.9 f2
A - g•** (4300 QS)(90.9 £2)

1+ gg R = l + (4300 ,uS)(90.9=2)0.281
27. (a) fi, = 4.7 kfl |J 10 kf2 = 3.2 kD
A
_ gpR _ (3000 QS)(3.2 kf2)
= 0.906
l+
gg R 1+ (3000 QS)(3.2 kf2)
(b) R, — 100 D J 10 k 1 = 99 Al
A
_ gg R (4300 QS)(99 II)
= 0.299
l + gg R I +75(4300
QS)(99 f2)
Chapter 8
Section 8-4 Common-Gate Amplifiers
28. A — g d— 4000,uS(1.5 kCi) = 6.0
29• Min(source) 250 f2

gg 4000
QS
30. A— — 3500yS(10 kf2) =
god 35
= 253
3500 F2
QS
31. (a) <D ' <DDs No signal at Q drain; No output signal
H) <D z 0 V (floating); No signal at Q drain; No output signal
(c) <GSl = 0 V; - 0 V; <D less than normal; Clipped output signal
(d) Correct signal at Q drain; No signal at Qz gate; No output signal
(e) D2 = <DDiCorrect signal at 0s gate; No Q2drain signal or output signal
32.
(a) K„, = 0 V if Co is open.
(b) A — g d 5000 QS(1.5 k 1) = 7.5
gp Rd 7.5
A v2 = 2.24
1+ c 1 + (5000 QS)(470
A — A A z — (7.5)(2.24) = 16.8
D)
V y$— Ay in — (16.8)(10 mV) = 168 mV
(c) No effect on K „ unless D is so low that clipping occurs.
(d) No U„, because there is no signal at the Qz gate.
33. The 10 QF capacitor between the drain of Q and the gate of Q is open.
34. At test point 2: 250 mV is correct

At test point 3: 800 mV is approximately correct
At test point 4: 530 mV is too low
At test point 5: 2.12 V is too low but consistent
with TP4
35. Most
D2' likely,
12 V — the(5.10
coupling capacitor
mA)(1.5 kf2) =between
4.35 stage
1 dV
and (100
stagemV)(2200
2 is leaky.QS)(1.5
Replace.
kf2) = 330 mV
VzI — (330 mV)(2600 QS)(1.5 kf2) = 1.29 V rms
76
Chapter 8
Data Sheet Problems
36. The 2N3796 FET is an n-channel D-MOSFET.
37. (a) For a 2N3796, the typical pcs(off)'

3•0 V
(b) For a 2N3797, DS(max)= 20 V
(d) For a 2N3797,
(c) At Fg = 25°C, Dm = 200=mW
( ax)GS(ma.) ñ10 V
38. D' 200 mW — (1.14 mW/°C)(55°C —

25°C) = 166 mW
39. For a 2N3796 with/= 1 gon = 900 minimum

40. At GS' 3.5 V and ODS 10 V,
q .› = 9.0 mA,p = 14 m A› D(max)
= 18 mA
41. For a zero-biased 2N3796,p = 1.5 mA
42. Aq ) — (1800 QS)(2.2 kf2) = 3.96
Advanced Problems
43• d(min)' •0 kf 4 kf2 =

800 ll A yp — (2.5 mS)(800 f2)
= 2.0 fiu( ,) = 1.0 kf2 J 10 kD =
44. 909 f2
DSS(typ) = 2.9
mA
sa min)'
12 V(7•5 I S ) ( 9 0 9 f2)
RD +
= 6.82
S 2.9 mA= 414 kf2
1 _ = 435
g+ 2300 QS
If — 0 D, then ID - 4 kf2 (3.9 kf2
A - (2300
standard) )(3.9 kD) = 8.97
DS' 24 V — (2.9 mA)(3.9 kCi) = 24 V — 11.3 V = 12.7 V
The circuit is a common-source zero-biased amplifier with a drain resistor of 3.9 kfI.
45. To maintain D ' 12 V for the range of JDSS values:

For JD ( = 2 mA
2 mA
For JD S‹ . ) = 6 mA
12
D
V =2k
6 mA
To maintain A —
— 9 for the range ofgp(y/,)
values: For g« .) = 1500 QS
77
Chapter 8
9
1500 QS = 6 kf2
For gp — 3000
QS
9
3000 QS = 3 kf2
A drain resistance consisting of a 2.2 k ) fixed resistor in series with a 5 kf2 variable resistor
will provide more than sufficient range to maintain a gain of 9 over the specified range of gp
values. The dc voltage at the drain will vary with adjustment and depends on 2D
The circuit cannot be modified to maintain both <D - 12 V and A — 9 over the full range of
transistor parameter values.

47. Cz open
48. C, open
49. shorted
50. Drain-source open
51. fi, open
52. ID open
53. open
54. C2 open
78
Chapter 9
Power Amplifiers
Section 9-1 Class A Power Amplifiers
330 II
1. (a) $15 V = 3.72 V
1.0 kf2 + 330
kDJ
E' B BE' E3.72 — 0.7 V = 3.02 V
3.02 V
= 68.4
E1
E
2 8.2 II + 36 f2
CEQ CC + (Jc)( Ei+ E2+ ñ)
' = 15 V — (68.4 mA)(8.2 Ci + 35 D + 100 CI) = 5.14
V
Rp _ 100 f2
(b) A —
— = 11.7
BE , + re 8.2 f2 + 0.37 Cl
= 100 (8.2 F2 + 0.37 Ci) J 330 D J 1.0 kf2 = 192 D
= 263
The computed voltage and power gains are slightly higher if r’eis ignored.
2. (a) If fi2 is removed, there is no collector current; hence, the power dissipated in the
transistor is zero.
(b)Power is dissipated only in the bias resistors plus a small amount in 7t ,

E £tnd fiE2. Since the load
resistor has been removed, the base voltage is altered. The base voltage can be found
from the Thevenin equivalent drawn for the bias circuit in Figure 9-1.
V -- 3.72 V
D E2 — 44.2
B E'
CI
Figure 9-1
Applying the voltage-divider rule and including the base-emitter diode drop of 0.7 V
result in a base voltage of 1.2 V. The power supply current is then computed as
' cc KCT — 1.2 V 15 V —1.2 V 13.8 mA

= 1.0 kD
i
79
Chapter 9
Power from the supply is then computed as
T' CC cC' (13.8 mA)(15 V) = 207

mW
(c) A — 11.7 (see problem l(b)). in= 500 mVp = 177

mV pqq _ K „ .
V y( — Ay in— (2.07 V°
11.7)(177 mV) =
= 42.8 mW 2.07 V
3. The changes are shown in Figure 9-2. The advantage of this arrangement is that the load
resistor is referenced to ground.
+ EE
+15 V
$E2
36
CI
330
8.2 f2
f2
VS = 500 mVpp 22 JiF z

1.0 kfl 100 fl
1.0 kHz
0.5 W
Figure 9-2
4. A CC amplifier has a voltage gain of approximately 1. Therefore,

A = 44
5.
(a) fi iN(base)' QC( El + E2)' (125)(79.7 ) = 9.96 kf2
Since fim(base) > 0 2. it can be neglected.
510 Ci
’CC 510 F2
680 12 V - 1190 f212 V = 5.14 V
E' B— 0.7 V = 5.14£1V+—
510
0.7IIV = 4.44
V
4.44 V
EE
B 79.7 = 55.7 mA
CQ' CC CI C C' 12 V — (55.7 mA)(100 Ci) = 6.43 V
CEQ' C E' 6.43 V — 4.44 V = 1.99 V
ce(cutofft CEQ + JCQfi p=1.99 V + 55.7 mA(50 Al) = 4.78 V

Since +cEQ is closer to saturation, I is limited to
I —
— CEQ 1.99 V
- 39.8 m A
K„, is limited to
outtp) CEQ' 1.99
V
80
Chapter 9
Q) HN(base)' QC( El + E2) (120)(142 D) = 17 kf2

Since Why(base)< 10$ 2. it is taken into account.
‘2 J IN(base) 4.7 kfl J 17 3.68 k

kf2+ 4.7 kf2 J 17 12 V = 12 V = 2.82 V
12 kf2 2
15.68 k€l
1+ 2J
IN(base) kCl
E' B— 0.7 V = 2.82 V — 0.7 V =
2.12 V
E' I IE' 2.12 V/142 f2 = 14.9 mA
CQ CC c C' 12 V — (14.9 mA)(470 Al) = 5.0
CQ' V
CE c JCQ ¿ - 470E'f2 5.0 V f2
470 — =2.12
235Vf2= 2.88 V
Q'
ce(cutog — pcEQ + C ‹' 2.88 V + 14.9 mA(235 Cl) = 6.38
‹V
Since +cQz is closer to saturation, /, is limited to
2.88 V
A,
CEQ 235 - 12.3 mA
D CEQ' 2.88 V
K„, is limited to K„,¿p)
‘'
6. (a) Ap ' "
= 10.6
E' 47. 4.7 II
E
CI
1
R; — 680 Ci J 510 Ci J (125)(4.7 II) = 680 2J 510 Ci J 588 O = 195 CI
Ap — (10.6)2 195 II =
219
100 Al
(b) = 10.7
22 22 f2
El E1
Al
(120)(22 f2) = 12 kf2 4.7 kD 2.64 kf2 = 1.48 kfl
in— 12 kfl 4.7 k£2
2 1.48 kfl
Ap (10•7) = 361
470 II
81
Chapter 9
7• IN(base C E' 90(130 Ct) = 11.7 kf2
)'
e) ' fi2 J filNb a 10. kf2 J 11.7 kf2 = 921 it
2J IN(base)
921 D
“l + “2 J in(base) 5.62 kf2 24 V = 3.93 V
E' B 0.7 V = 3.93 V — 0.7 V = 3.23
V E 3.23V
JcQ JE'
- 24.8 mA
7tE 130 Ci
c' ecsc' 24 V — (24.8 mA)(560 Ct) = 13.9
cc V
CEQ' 5 = 13.9 V — 3.23 V = 10.7 V
DQ' CQ CEQ' (24.8 mA)(10.7 V) = 265
8. From
C Problem m W 7: CQ = 24.8 mA and <cEQ' 10.7
Vce(cutofft
D(min)' CEQ + C c = 10.7 V + (24.8 mA)264 f2 = 17.2
V
The Q-point is closer to cutoff than to saturation.
P — 0.5ZQ g = 0.5(24.8 mA)2264 Ci = 81.2 mW
eff— = 0.136
(24 V)(24.8 mA)
Dc cc cc ccJcQ
Section 9-2 Class B and Class AB Push-Pull Amplifiers

9. (a) <B(Ql) = 0 V + 0.7 V = 0.7 V
B(Q2) = 0 V — 0.7 V = —0.7 V E'
0V
‹C cc —(— )—1.4 V 9 V —(—9 V)—1.4 V -8.3mA

fi, + fi2 1.0 kfl + 1.0 kf2
Q-
CEQ(@1) = 9 V
CEQ(@2)' —9
V
250
= 180 mA
2“ dc load line
ac load line
These points define the ac load line as shown

in Figure 9-3. The O-point is at a collector
*. I
I
150
ioo
al
current of 8.3 mA (see problem 9) and the dc
50
load line rises vertically through this point. Q@Oiht
0 2 4 6 8
0
10
Vce (V)
Figure 9-3
82
Chapter 9
11. (a) B(Q1)= 7.5 V + 0.7 V = 8.2 V
B(Q2)= 7.5 V — 0.7 V = 6.8 V
i2v - 7.5 V
CQ' KCT — 1.4 V 15 V —1.4 V
= 6.8 mA
fi, + fi 2 1.0 kf2 + 1.0 kf2
CEQ(Q1)= 15 V — 7.5 V = 7.5 V
0 V — 7.5 V = —7.5
CEQ(Q2)'
V
10 Vpp' 3.54 V rms
Q) fg 2
qf
_ (3.54 V)2
( L)
L' 167
75 II W
12. (a) Maximum peak voltage = 7.5 Vp• 7•5 Vp' 5•30 V rms
) (5.30 V)2 - 375 mW
L(max) ' (• L
z
Q) Maximum peak voltage = 12 Up. 2 Vp' 8•48 V rms
L(max)'
•L ) (8.48 V)2 - 960 mW
z
13. (a)Co open or Q open
(b) power supply off, open fi„ Q base shorted to ground
(c) Q has collector-to-emitter short
(d) one or both diodes shorted
14. — (—KDD) _ 48 V
= 455
(a) fi, + fi2 + fi3 105.6
B' kf2
DD IzJ( j + z)' 24 V — 455 /fA(5.6 kCl) = 21.5 V
E' Q + 0.7 V = 21.5 V + 0.7 V = 22.2
VDD 24 V — 22.2 V = 1.64 mA
E
fi 4 + fi 5 1.1 k£2
A6' TH(Q1) TH(Q2)5.5
= 2.75
V V — (—2.75 V) = 5.5 V
3.35 kf2
?t6
fi6
(b) er — 25 mV 25 mV
= 15.2 Al
E 1.64 mA
A —
— = 130
fi 5 + re 115.2 D
Vpy$ — Ay in— 130(50 mV) = 6.5 V
K„ (6.5 V)2
(c) = 1.28 W
83
Chapter 9
Section 9-3 Class C Amplifiers
15• D(avg)'
T KCE( ,) C( ,) = (0.1)(0.18 V)(25 mA) = 450 W
1 1
16. f = 50.3 kRz
— 2 HC ' 2c ( 0 )(0 00 )
17• Vgy p) 2 cc 2(12 V)' 24 V

'
0.5K C _ 0.5(15 V)°

= 2.25 W
A,
50 II
D(avg) (0 1)(0.18 V)(25 mA) = 0.45
' T c(sat)' mW
P„ 2.25 W
= 0.9998
O ut+ 225 W + 0.45 m W
D(avg)

19.
With Co open, only the negative half of the input signal appears across Rz.
20. One of the transistors is open between the collector and emitter or a coupling capacitor is
open.
21. (a) No dc supply voltage
(b)Diode D, or D2 open
(c) Circuit is OK
(d) Q shorted from
collector to emitter
System Application
Problems
22. For the block diagram of textbook Figure 9-34 with no signal from the power amplifier or
preamplifier, but with the microphone working, the problem is in the power amplifier or
preamplifier. Check for an output from the preamp. If one is present, the preamp is not at
fault.
23. For the circuit of Figure 9-35 with the base-emitter junction of the 2N6043 open, the dc
output will be approximately 6 V with a signal output having the positive alternations of the
input signal.
24. For the circuit of Figure 9-35 with the base-emitter junction of the 2N6040 open, the dc
On the circuit board of Figure 9-49, the input coupling capacitor Co has been installed backwards.
25.
output will be 0 V with no signal output.
The positive lead should connect into the circuit.
84
Chapter 9
Data Sheet Problems

26. From the 2N6040 data sheet of textbook Figure 9-36:
(a) & c(in») ' 100 @ p/ = 8.0 A, CE' 4 V
2( p-) 1000 (@j c ' 4 0 A, CE'
4V
(b) For a 2N604), cp g)' 80 V
(C) D(max)' 75 Tc 25°C
(d) Zp(q„) = 8.0 A continuous or 16.0 A peak
27. D' 75 W — (65°C — 25°C)(0.6 W/°C) = 75 W — 24 W =
51 W
28. D = 2.2 W — (80°C — 25°C)(0.0175 W/°C) = 2.2 W — 963 mW = 1.24
W
29. As the frequency increases, the small-signal current gain decreases.
30• h fe — 2800
—f 2 kHZ
100 kH
hfe — 700 @ f
Advanced Problems
31. Jc is much closer to the actual junction temperature than pAIn a given
operating environment, EAis always less than Tcp
24 V 24 V $g
32 +c(sat)'
. 430 II
CE(cutoff)'33024F2V + 100
€1 1.0 kf2
BQ' 24 V = 4.21 V
{1.0 V
EQ' 4.21 kf2—+0.7
4.7V = 3.51
V
3.51 V
100 II - 35.1 mA
R — 330 D J 330 f2 = 165 II
89.1
CQ' 24 V — (35.1 mA)(165 II) = AC load line
12.4 V CEQ' 12.4 V — 3.51
V = 8.90 V + 8.90 V _ gg
mA
165 Al
DC load line
ce(cutoffj 8•90 V (35. l mA)(165 f2) = 14.7
V
See Figure 9-4. 14.7 24 •C (v)
Figure 9-4
85
Chapter 9
33. See Figure 9-5.
15 V
86 = 174 mA
Ci
' 15 V = 3.14 V
86 O
E' 3.14 V — 0.7 V = 2.44
V
2.44 V
4.85 D- 503 mA
c' 15 V — (10 ii)(503 mA) = 9.97
V
CE' 7.53 V
25 mV
503 = 0.05 f2
mA
The ac resistance affecting the load line is
15 V
Rc
7.53 V 10 Et
10.2 Hi= 1.24 A
ce‹cuto 7•53 V + (503 mA)(10.2 f2) = 12.7 V
f
The O-point is closer to cutoff so BE
0.15 f2
P„ — (0.5)(503 mA)°(10.2 CI) = 1.29 W Cz
As loading occurs, the O-point will still be closer $E2 10a
4.7 f2
to cutoff. The circuit will have
P„ 1 W for fit 37.7 f2. (39 D standard) Figure 9-5
34. To modify the circuit of textbook Figure 9-39, to operate on dc power for 8 hours
continuously, remove the rectifier connections (with a switch possibly) and connect the power
terminals of the preamp and amplifier boards to a 12 V battery (possibly with the same switch
as that which disconnects the power supply). Because the preamp operates on 9 V, a zener or
other regulator must be used to set the proper voltage on this board.

35. Cir open
36. $E open
37. Q collector-emitter open
38. D shorted
39. Q2 drain-source open
86
Chapter 10
Amplifier Frequency Response
Section 10-1 Basic Concepts
1. If Cl — Ca. the critical frequencies are equal, and they will both cause the gain to decrease at
40 dB/decade be1owf,.
2. At sufficiently high frequencies, the reactances of the coupling capacitors become very small
and the capacitors appear effectively as shorts; thus, negligible signal voltage is dropped
across them.
3. BJT• Cue› Cbe. and Cce

FET: Cp„ Cmd. and Cp,
4. Low-frequency response: Cl, Cz, and C3

High-frequency response: Czzy Cbe› and Cce
4.7 kK
5 ’2
0•7 V $20 V — 0.7 V = 1.79 V
cc
. -I- fi 2 37.7 kflJ
KE_ 1.79 V = 3.2 mA

BE 560 II
re —
— 25 mV - 7.8
3.2 mA
A—
— = 202
( (miller)
C
% C bc{A + 1) = 4 pF(202 + 1) = 812 pF
6. 203
= 4 pFl 202d = 4 pF
7. D = 3.36 mA using Eq. 8—5 and a programmable calculator.

GS' —(3.36 mA)(1.0 kD) = —3.36 V
2(10
gon = ) = 2.5
mS
3.36 V
gg — (2.5 mS) 1 —8 V = 1.45
mS (1.45 mS)(1.0 kCi | 10 kfl) = 1.32
A, — gold
3 pF
C gd C rssCg§A + 1) = 3 pF(2.32) = 6.95 pF
C(y(miller)
= 3 pF 2’32 — 5.28
pF
87
Chapter 10
Section 10-2 The Decibel
8• Ap = 10
Up(dB) - 10 log = 10 log 10 = 10 dB

i
n
9
F„= V@„ 1.2 V = 24 mV rms
.
A {bB)50
—
— 20 log(A,) = 20 log 50 = 34.0
dB
25
10. The gain reduction is 20 lo =-
8.3dB
11. (a) 10 log = 3.01 dBm
l mW
(b) 10 lo
g(! = 0 dB m
mwJW
o low4 = 6.02 dBm
0.25
(d) 101og$ = —6.02 dBm
12. B 4.7 kf2

\37.7 $20 V = 1.79 V
'
1.79 V
= 3.20 mA
560 D
25 mV
re -- = 7.81 2
3.2mA
A — 5.6 kf2 J 2.2 kfl
— 7.81 = 202
Aqp -- 20 log
f2 (202) = 46.1 dB
At the critical frequencies,
AqdB) —- 46.1 dB — 3 dB = 43.1 dB
Section JO-3 Low-Frequency Amplifier Response

l
13 l
2cfiC 2c(100 f2)(5 = 318 Hz
.
QF)
' ' ’’’
' 2MC ' 2s(1.0 kf2)(0.1
QF)
88
Chapter 10
14. IN(base)' C E' 12.5 kf2
2J 4.7 kf2 J 12.5 kfl

IN(base) 9 V — 0.7 V 9 V — 0.7 V = 1.3
= 12 kf2 + 4.7 kf2 J 12.5 V
kit
KE_ 1.3 V
= 13 mA
Ag 100 Ci
—25 mV = 1.92
re' —
13 mA
in(fuse)' @„r e’ (125)(1.92 Al) = 240 Ci
R — 50 D + R ( z„e fi, J fi2 = 50 II + 240 II J 12 kfl J 4.7 kfl = 274 Al
For the input network:

1 1
= 578 Hz
2 (274 II)(1 QF)
2 inC,
For the output network:
1
1
2 (900 D)(1 QF) = 177 Hz
For the bypass
2 (@ + Rgnetwork:
)C3
TH' i J z 12 kCl 4.7 kf2 50 Al z 49.3 ii
' J 1 l
= 6.89 kHz
' re + TH D ' 2s(2.31 Al)(10
E
2 QF)
A JR 220 Ci J 680 Hi
1.92 II = 86.6
—— re
A {bB) — 20 log(86.6) = 38.8 dB
The bypass network produces the dominant low critical frequency. See Figure 10-1.
38.8
—20
dB/decade
-40 dB/decade
177
/(Hz)
0 i 578 6890
-60 dB/decade
Figure 10-1
89
Chapter 10
15. From Problem 14:
Aqg —
mif)
86.6
A
(dB) = 38.7
FordBthe input DC network: f — 578 Hz
fFor the output DC network: f — 177 Hz
For the bypass DC network: /, = 6.89 kHz
Thef, of the bypass network is the dominant low critical frequency.
Atf=f, = 6.89 kHz:
A — A :g — 3 dB = 38.7 dB — 3 dB = 35.7 dB
At/= 0.1/,:
A — 38.75 dB — 20 dB = 18.7 dB
At 10f, (neglecting any high frequency effects):
A — Aqg,q — 38.7 dB
16a At f'f ‹' c R

= tan*'(1) = 45°
&= tan‘'
A t f ' 0. I fz› c
&= tan* (10) = 84.3°
10a.
A l / ' 10/p, 0.1fi.
c
8= tan*'(0.1) = 5.7°
—10
= 200 MH
V
Ri — 5010 M£2 J 200 Mai = 9.52 MW
RSi g )e =
‘GS
nA network:
For the input
1
l
2 R; C, 2 (9.52 MH)(0.005 QF) = 3.34
kHz
For the output network:
1 1
f‹ —
— = 3.01 kHz
2s( D + Rg)C 2s(560 II + 10 kf2)(0.005
The output network is dominant. See Figure 10-2.
QF) A (dB)
8.47
0 3.01
Figure 10-2
90
18. 2(15 mA)
g- — — g- = 5 mS
(a)
Aqg; -- gp (M J Ag) = 5 mS(560 D J 10 kØ) = 2.65
—— D
Aqp;q(dB) = 8.47 dB
6V
Atf,:
A — 8.47 dB — 3
dB = 5.47 dB
At 0.l/,:
A — 8.47 dB — 20
dB = —11.5 dB
At 10/,:
A — Aqp;p — — 8.47
dB (if 10f, is still in
midrange)
Section 10-4 High-

Frequency Amplifier
Response
C Cbe C in(miler 1 25 pF + 876 pF = 901 pF
19. From Problems 14 and ' 4 32 MBz

15: 2 2c 50 D J12 kf2 J4.7 kf2 J 240 f2 01pF
er — 1.92
Output f2 and Aqptq —
network:
86.6 Input network: ' = 10 pF$g66 =
in(miller) 10.1C§g(A
pF +
1) = 10 pF(86.6) = 876 pF
2nR out(miIler
1 _ 2 (166 Ci)(10.1
1 pF)
Therefore, the = 94.9
j dominant high critical frequency MHz
is determined by the input network:
f — 4.32 MHz. See Figure 10-3.
A (dB)
38.7
/(MHz)
0 4.32 94.9
Figure 10-3
91
Chapter 10
20. Atf= 0.lf, =
458 kHz: A — Aqg
— 38.7 dB
At/ =f , — 4.58 MHz:
Ay — Aamid) — 3 dB = 38.7 dB — 3 dB = 35.7
dB Atf= 10f, = 45.8 MHz:
Ay — A mif)— 20 dB = 38.7 dB — 20 dB =
18.7 dB
At/= 100/, = 458 MHz:
The rolloff rate changes to —40 dB/decade
atf= 94.6 MHz. So, for frequencies from
45.8 MHz to 94.6 MHz, the rolloff rate is —20
dB/decade
458 MHz and above 94.6 MHz it is
— 45.8MHz
—40 dB/decade.
So, for 11.8% of the decade from 45.8 MHz to 458 MHz, the rolloff rate is —20 dB/decade
The change
and for in frequency
the remaining fromof45.8
88.2% MHz to the rolloff rate is —40 dB/ decade.
the decade,
94.63 MHzdBrepresents
A — 18.7 — (0.118)(20 dB) — (0.882)(40 dB) = 18.7 dB — 2.36 dB — 35.3 dB = —
19 dB MH‘
94.6 45’8
21. x 100% = 11.8%
Cg$
Cgi ies
C res res
C
4 QF 10 pF — 4pF=6 pF
Input network:
Cin(miller) Cg Ay + )' 4 QF(2.65 + 1) = 14.6 pF
CT — C Cin‹mifler) 6 QF + 14.6 pF = 20.6 pF
f 1
2K CT 2 (600 Al)(20.6 pF) = 12.9 MHz
'
Output network:
C pyf miller) d
4 = 4 pF$
2.65 + = 5.51 pF
2.65
Cg +
f —
— 1 1
2 vfid C (miller 2 (530 f2)(5.51 pF)
= 54.5 MBz
The input network
1 is dominant.
22. From Problem 21: For the input network,f, — 12.9 MHz and
for the output network,f, —— 54.5 MHz.
The dominant critical frequency is 12.9 MHz.
At/= 0. I f —
— 1.29 MHz: A - Aqpp — 8.47 dB, 8= 0°
At f-f — 12.9 MHz: A — Aqgp - 3 dB = 8.47 dB — 3 dB = 5.47 dB, &= tan* (l) = 45°
At/= 10/, = 129 MHz:
From 12.9 MHz to 54.5 MHz the rolloff is —20 dB/decade. From 54.5 MHz to 129 MHz the
rolloff is —40 dB/decade.
The change in frequency from 12.9 MHz to 54.5 MHz represents
54.5 MHz —12.9MHz . 100% = 35.8%
129 MHz — 12.9MHz
So, for 35.8% of the decade, the rolloff rate is —20 dB/decade and for 64.2% of the decade,
the rate is —40 dB/decade.
A — 5.47 dB — (0.358)(20 dB) — (0.642)(40 dB) = —13.1
dB At/ = 100/, = 1290 MHz: A, — —13.1 dB — 40 dB = —
53.1 dB
92
Chapter 10
Section 10-5 Total Amplifier Frequency Response

23. /,t = 136 Hz
f„ = 8 kHz
24. From
Problems 14 and
19:
f„ — 4.32
MHz and/
„ = 6.89
kHz
BW — — fg 200 MHz
3 = 5.26 MHz
(mid
BW —fz —
Therefore,/„
f—— 4.32›
z BW — 8 5.26 MHz
26. MHz —
6 dB/octave rolloff:
6.89 kHzA =— 50 dB — 6 dB = 44 dB
At 2f„:
4.313
At 4/„: A — 50 dB — 12 dB = 38
MHz
dB
20 dB/decade rolloff:
At 10/„: A — 50 dB — 20 dB = 30
dB
Section
27. 10-6 frequency
Dominant Response
/, = 230 Hz
DominantAmplifiers
ofMultistage /, = 1.2 MRz
28. BW — 1.2 MHz — 230 Hz - 1.2

MHz
29. f ’, —
400 Hz _ 400 Hz = 622 Hz
2 0.643
1
f —— (800 kHz)21 2 = 0.643(800 kHz) = 515
kHz— 515 kHz — 622 Hz z 514
BW
kHz
30. f', —
—
50 Hz 50 Hz
1 0.510= 98.1 Hz
2 3
31. f’, —
—
125 Hz _ 125 Hz = 194 Hz
} 0.643
2 2
/J 2.5
BW — 2.5 MHz — 194 Hz - 2.5
MHz
MHz
93
Chapter 10
Section 10-7 Frequency Response Measurement

f 0.35 0.35
- 350 Bz
32,
tf ITIS
0.35 0.35
= 17.5 MHz
'r 20 ns
33. Increase the frequency until the output voltage drops to 3.54 V (3 dB below the midrange
output voltage). This is the upper critical frequency.
34. i, - 3 div x 5 /div = 15

f — 6 div x 0.1 ms/div =
600
0.35
0.35
t 600 ps= 583 Hz
= 23.3 kHz
BW — 23.3 kHz — 583 Hz = 22.7

kHz

_ 13 kf2
35. B $12 V = 1.38 V, Kg= 0.68 V
\113
k£2
R; — 22 kf2 J 100 kf2 J (112 Al)(100) = 6.9 kf2 (both stages)
First stage:
1
= 23.1 Hz
f•(' 2c(6.9 kf2)(1 QF)
R„ — 4.7 kf2 + 6.9 kf2 = 11.6 kCl
1
= 13.7 Hz
2s(11.6 kf2)(l QF)
bypas 220 Al (112 fl + 22 kf2 100 kCl /100) = 125 II
s
= 12.7 Hz
II)(100 QF)
Second stage:
f (; ) — 13.7 Hz (same asf,t(„,) of first
stage)
R„ — 4.7 kfl + 10 kf2 = 14.7 kf2
l
2c(14.7 kfl)(l QF) = 10.8
Hz
bypas 220 f2 (112 II + 22 kf2 100 kf2 4.7 k£2/ 100) = 88.8 f2
s
b
f• ( 2s(88.8 II)(100 = 17.9 Hz
QF)
’
f ; of first stage is the dominant lower critical frequency.
94
Chapter 10
36. Changing to 1 QF coupling capacitors does not significantly affect the overall bandwidth
because the upper critical frequency is much greater than the dominant lower critical
frequency.
37. Increasing the load resistance on the output of the second stage has no effect on the dominant
lower critical frequency because the critical frequency of the output circuit will decrease and
the critical frequency of the first stage input circuit will remain dominant.
38. 13 kD
112 V = 1.38 V, E' 0.68 V
E' 2.13 mA, r’e 1 7 II
ni — 22 kf2 100 kf2 (112 O)(100) = 6.9 k£2 {both

stages) = 2.31 Hz
First stage:
R — 4.7 kf2 + 6.9 kf2 = 11.6 kD
= 1.37 Hz
2c(11.6 kfl)(10 QF)
bypas 220 Ct (112 £2 + 22 kfl 100 kf2/ 100) = 125 Ci
s
fct‹bypassj = 12.7 Hz
2s(125 CI)(100 QF)
Second stage:
fcl[in 1.37 Hz (same asf„(„,) of first stage)
)R„ - 4.7 kf2 + 10 kCi = 14.7 kfl
- i o8 m
f•(• 2c(14.7 kf2)(10.F)
bypas 220 f2 (112 Al + 22 kfl 100 kf2 4.7 kf2/100) = 88.8 D
s
cl(bypass)
= 17.9 Hz
2 (88.8 II)(100 QF)
First stage:
R — 4.7 kf2 J 100 kf2 J 22 kfl J (100)(100 f2 + 11.7 II) = 2.8 kf2
App
_ 2.8 kf2 = 25
112 D
Cin(Miller) (25 + 1)4 pF = 112 pF
C; (z ) — —_ 112 pF1+ 8 pF = 120 pF
(25 +
C y J Miller
14 pF = 4.16 pF
25 J
= 192 kHz
2s(6.9 kf2)(120 pF)
1
f (Ot t t )
2c(2.8 kf2)(4.16 = 13.7 MHz
QF)
95
Chapter 10
Second stage:
R — 4.7 kfl J 10 kf2 = 3.2 kf2
3.2 kf2 = 28.6

1120
C((g Miller j (28.6 + 1)4 pF = 119 pF
_
Cj n(tot
C py 28.6+ +8 pF = 127 pF
(Miller) 119 pF
28.6 14
J pF = 4.14 pF
= 448 kHz
2s(2.8 kf))(127 pF)
= 12.0 MHz
2c(3.2 kCi)(4.14 pF)
0 35
17.9 Hz- i9.s
0.35
192 = 1.82 @
kHz
Data Sheet Problems
39• Cjn(tot1 (25 + 1)4 pF + 8 pF = 112 pF
fT 300
40. BWpu'
MHz
@( g,d 50
41• C gd C res 1•3 QF
Cg$ C(5$ C res 5 pF — 1.3 pF = 3.7
C ds pF
Cd C res 5 QF — 1.3 pF = 3.7 pF
Advanced Problems
42. From Problem 12: r’e 7.81 ) and / E = 3.2 mA

c 20 V — (3.2 mA)(2.2 kf2) = 13 V
The maximum
dc peak output signal can be approximately 6 V.
The maximum allowable gain for the two stages is
6V
A 1.414(10 mV) = 424
For stage 1:
R — 2.2 kf2 J 33 k£l J 4.7 kf2 J (150)(7.81a) = 645
Al
645
A 7.81 = 82 6
£2
96
Chapter 10
For stage 2:
R — 2.2 kD J 5.6 kf2 = 1.58 kD
1.58 kf2 = 202
7.81 D
Aq — (82.6)(202) = 16,685
The amplifier will not operate linearly with a 10 mV rms input signal.
The gains of both stages can be reduced or the gain of the second stage only can be reduced.
One approach is leave the gain of the first stage as is and bypass a portion of the emitter
resistance in the second stage to achieve a gain of 424/82.6 = 5.13.
A — — 5.13
R e + re
e
fic —5.13 5.13
5.l3re’ _ 1.58 kfl — 40.1
= 300 in
Modification: Replace the 560 Al emitter resistor II the second stage with an unbypassed
300 I) resistor and a bypassed 260 £) resistor (closest standard value is 270 Al).
43. From Problems 17, 18, and 21:
on miller)' 2.65 + 1$
4 FI 2.65= 5.51 pF
Stage 1:
1 _ 1
= 3.34 Hz
2 in 1 2c(9.52 MCi)(0.005
QF) l
= 3.34 Hz since fi .( ) >> 560 ii
2c(9.52 MW)(0.005 QF)
= 12.9 MHz
2c(600 II)(20.6 pF)
f‹•(••ñ = 10.5 MHz

2s(560 D)(20.6 pF + 5.51pF)
Stage 2:
i
1
2 2 (9.52 MCI)(0.005 QF) = 3.34 Hz
1
“in C, = 3.01 kHz
2 (10.6 kCl)(0.005 QF)
l
= 10.5 MHz
2s(560 II)(20.6 pF +
5.51pF)
1
2s(560 II J 10 kCi)(5.51 = 54.5 MHz
Overall: pF)
/,t( „) = 3.01 kHz and/„(;,j = 10.5 MHz
BW z— 10.5 MHz
97
Chapter 10
44. .( › = 22 kf2 J (100)(320 £2) = 13 kf2
B(l)' 13 kf2
113 kf212 V = 1.38, E(1)= 0.684 V
0.684 V
320 O = 2.14 mA, re 72
fiqt) = 4.7 kf2 J 33 kfl J 22 kf2 J (100)(100 Al) = 2.57 kD
A 2.57 kf2 = 23
' 112 O
i»( 22 kf) (100)(1010 ii) = 18 kfl
z)' 18 kf2
B(2)'
12 V = 4.42,
51 kf2 E(1)= 3.54 V
3.54 V 7 13
1.01kf2= 3.51 mA, re Al
qz 3k 10 kf2' 2.31 kit
)' 2.31k£1
A {2)'
= 24 maximum
107.13 D
2.31kf2
A' 2’ 101 kf2 + 7.13 = 2.27 minimum
II
Aq ) — (23)(24) = 554 maximum
Aq ,) - (23)(2.27) = 52.3 minimum
This is a bit high, so adjust fi,(,) to 3 k 1, then
3 kf2 J 22 kfl J 33 kCl J 101kfl
A = 21
4 112
Now, Al
Aq — (21.3)(24) = 513 maximum
Aq — (21.3)(2.27) = 48.5 minimum
Thus, A is within 3% of the desired specifications.
Frequency response for stage 1:

R; —
— 22 kCl J 100 kfl J 32 kf2 = 11.5 kfl
= 1.38 Hz
2v(11.5 kf2)(10 QF)
Remitter 220 II (100 II + 11.7 Al + (22 kf2 100 kf2)100) = 125 D

1
f•('•• ”' 2c(125 f2)(100 = 12.7 Hz
QF)— 3 kit + (33 k I J 22 kf2 J (100)(107 D)) = 8.91 kf2
R„
i
= 1.79 Hz
2 (8.91 k€2)(10 QF)
98
Chapter 10
Frequency response for stage 2:
/c/(in)' 1.79 Hz (same asf,i(„,) for stage
1)
R„ — 3 kf2 + 10 kf2 = 13 k£2
1
2s(13 kD)(10 QF)- 1.22 Hz
This means that CE(2) is the frequency limiting capacitance.
(100 f2 + 7 f2 + (22 kf2 33 kD 3 kf2) /100) = 115 f2
emitter 9 0 D
For f ’, — 1 kHz:
c, 2) ' 38
2c(.15 )(l
1.5 is the' closest standard value and
gives
kHz)
922 Hz
”' 2s(115 II)(1.5 QF)
This 'value can be moved closer to l kHz by using additional parallel bypass capacitors in
stage 2 to fine-tune the response.

45. c open
46. Output capacitor open
47. fit open
99
Chapter 11
Thyristors and Other Devices
Section 11-1 The Basic 4-Layer Device
1. A' BE CE(sat)' 0.7 V + 0.2 V = 0.9 V
<s BiAs
A - 25 V 0.9 V = 24.1 V
'
_ zS _ 24.1 V
= 24.1 mA
@ 1.0 kf2
2. (a) fi =
(b) From 15 V to 50 V for an increase of 35 V.
Section 11-2 The Silicon-Controlled Rectifier (SCR)

3. See Section 11-2 in the textbook.
4. Neglecting the SCR voltage drop,

30 V
= 3 kf2
10 mA
Section 11-3 SCR

Applications
5. Add a transistor to provide inversion of the negative half-cycle in order to obtain a positive
gate trigger.
6.
D and Do are full-wave rectifier diodes.
7.
See Figure 11-1.
VA
Figure 11-1
10
0
Chapter 11
Section 11-4 The Diac and Triac

8. 1•414(25 V) = 35.4 V
1 •414 in(rms)
Vjypp) 35.35 V
- 35.4 mA
1.0 kO
Current at breakover = 20 V
1.0 = 20 mA
See Figure 11-2. kf2
Figure 11-2
9. 15 V
fq = 4.7 k = 3.19 mA
See Figure 11-3.
Figure 11-3
section 11-s rae Silicon-Controlled Switch

(SCS)
10. See Section 11-5 in the text.
11. Anode, cathode, anode gate, and cathode gate
10
1
Chapter 11
Section 11-6 The Uniyii nction Transistor (OUT)
12. q=
r, _ 2.5 kf2 =0.385
ref , + r 2 2.5 kfl + 4 kf2
J3
Up HSBB + py 0•385(15 V) + 0.7 V = 6.48 V
12 V — 0.8 V < R < 12 V —10 V

15 mA ' 10 QA
747 D < fi, < 200 kf2
Section 11-7 The Programmable

UAT(PUT)
15. (a) EA= 3
KB+ 0.7 V = 20 20 V + 0.7 V = 9.79 V
_ $47
’2 ’3
KB + 0.7 V 94 9 V + 0.7 V = 5.2 V
kf2d
16. (a) From Problem 15(a). A 9.79 V at turn on.
9.79 V = 20.8 mA turn on
I — 470 D at
10 V
= 21.3 mA
470 f2
See Figure 11-4.
Figure 11-4
10
2
Chapter 11
(b) From Problem 15(b), A = 5.2 V at turn on.

_ 5.2 V
= 15.8 mA at tum on
330 F2
l0V = 30.3 mA
3300
See Figure 11-5.
Figure 11-5
10
17. A ' 6 V + 0.7 v ) 6 V + 0.7 V = 3.7 V at turn on
kf2
' —
<Rl - A - 3.7 V at tum
on. See Figure 11-6.
Figure 11-6
10
3
Chapter 11
Section 11-8 The Phototransistor
18. c' O›c/2' (200)(100 ) = 20 mA
19. (a) P = 12 V
H) r -o v
20. /,t = (50 1m/m2)(1 e lm/m2) = 50
JE' CI C2 â1 = (100)(150)(50 ) = 750 mA
Section 11-9 The Light-Activated SCR (LASCR)

21. When the switch is closed, the battery K, causes illumination of the lamp. The light energy
causes the LASCR to conduct and thus energize the relay. When the relay is energized, the
contacts close and 115 V ac are applied to the motor.
LASCR on
Figure 11-7
Section 11-10 Optical Couplers

23. I i - (0.30)(100 mA) = 30 mA
24. =0.6
’OUT _ 1 0 m A = 16.7 mA
0.6 0.6

25. The motor runs fastest at 0 V for the motor speed control circuit.
26. If the rheostat resistance decreases, the SCR turns on earlier in the ac cycle.
27. As the PUT gate voltage increases in the circuit, the PUT triggers on later in the ac cycle
causing the SCR to fire later in the cycle, conduct for a shorter time, and decrease the power
to the motor.
10
4
Chapter 11
Advanced Problems
28. D : 15 V zener
(1N4744) Hi: 100 CI, 1
W
2T 100U,1W
Q : Any SCR with a 1 A
minimum rating (1.5 A
would be better)
A,: 150 II, 1 W
AC Input

DC Supply
1N4735
f(max) = 1.5 A
150 f2 1 W
Figure 11-8
30• Up fi ABB + py (0•75)(12 V) + 0.7 V = 9.7 V

I —— 10 mA and Up 20
12 V — 9.7
115 kf2
V
12V -lV - i i in
10 mA
Select fi, = 51 kCi as an intermediate value.
During the charging cycle:
9.7 V = 12 V — (12 V — 1V)e*" " C
= ln
2.3 V
i, = — fi,C ln 2.3 V = 1.56A,C — 79.8 x

I03 C
10
5
Chapter 11
>> BI):
During the discharging cycle (assuming
1 V = 0 V — (0 V — 9.3 V)e*'2 2C
V
'2 = 1n$ '
/z' —R ' 2.23 z

\9.3
2
V sO 2 = 223 x 10 C.
Let fi, = 100 kCi,
Since/= 2.5 kHz, T — — 400 ps +12 V
79.8 X 103C + 223 x 10 C —- 303 x i 0 ' c —
— 400
T — fi + z'
ps
c —303 400 ps
x 103 = 0.0013 QF
See Figure 11-9. 51 kf2
0.0013 pF
Figure 11-9

31. Shockley diode shorted (EWB only)
32. Gate-cathode open
33. fi, shorted
10
6
Chapter 12
Operational Amplifiers
Section 12-1 Introduction to Operational Amplifiers
1. Practical op-amp: High open-loop gain, high input impedance. low output impedance, and
high CMRR.
Ideal op-amp: Infinite open-loop gain, infinite input impedance, zero output impedance, and
infinite CMRR.
2. Op amp 2 is more desirable because it has a higher input impedance, a lower output
impedance, and a higher open-loop gain.
Section 12-2 Op-Amp Input Modes and Parameters

3. (a) Single-ended input
(b) Differential input
(c) Common-mode
4. CMRR(dB) = 20 log(250,000) = 108 dB
5. CMRR(dB) = 20 lo = 20 log
175,000 — 120
0.18 dB
6. CMRR =
A _ 90,000
=0.3
CMRR 300,000
I 8.3 QA — 7.9
7. B
AS 2
8. Input bias current is the average of the two input currents. Input offset current is the
difference between the two input currents.
os' 8.3 ,£fA — 7.9 yAJ = 400 nA
9.
Slew rate = 24 V = 1.6 V/
10. k V„,
Ai = slew rate
_ 20 V = 40
0.5
V/ps
10
7
Chapter 12
Section 12-4 Op-Amps with Negative Feedback

11. (a) Voltage-follower
(b) Noninverting
(c) Inverting
_q
12. B 9.90
= —R, x+
*' 10*'
R 101 kf2
V/ — BV — (9.90 x l0* 3)5 V = 0.0495 V = 49.5 mV
13. (a) A — =
374
(b) K@p{ = Ay( 1' in — (374)(10
1.5 kf2/mV)
561.5= kf2
3.74 V rms
1.5 kD
(C) if —" 3.74 V = 9.99 mV rms
{561.5
1 1
14. (a) A i i* = 11
B 4.7 kf2/ 51.7
kf2
1
(b) A‹!H) 1 10 kf2/ 1.01 = 101
B MU = 47.8
(c)
) B—4.7 kCi / 224.7 kfl
1 1
= 23
(d) A wi B 1.0 kf2/ 23
kf2
15. (a) 1 + —’ — A
)
if — R — 1) = 1.0 kf2(50 — 1) = 49
{A
R kC1
(b) — = A (
f RJA ( ) — —10 kit(—300) = 3 Mil

(c) fi/' i( Alfs) — 1) = 12 kf2(7) = 84 kfl
(d) Rf — —RJA ( ) — —2.2 kf2(—75) = 165 kfl
16. (a) A p) — 1
R _$100
- —i
(b) Sq R; kf2
\100 kf2
l(I)'
= 22
330
(d) A I =—
"' ’' R, kf2
10
33 kfl
10
8
Chapter 12
17. in = 10 mV, in phase
(a) Spot
() @pt = Ayn in — — jp — —(l)(10 mV) = —10 mV, 180° out of
phase
10 mV = 223 mV, in phase

47 kf2
1047 kf2
330kO
10 mV = —100 mV, 180° out of phase
R, 33kO
18. (a) /;, = = 455

QA
Section 12-5 Effects ofNegative Feedback on Op-Amp impedances
2.7 kf2
19. (a) B ——562.5 = 0.0048
ia(Nkf2(1 + Agf)Z; — [1 + (175,000)(0.0048)]l0 MMD = 8.41
I)' Gf2
I + A B l + (175,000)
(0.0048)
1.5 kfl
(b) B — 48.5 kf2= 0.031
Z;, = (1 + — [1 + (200,000)(0.031)]1 MCi = 6.20
A )Z GC1
otif(NI)' = 4.04 md
Z„, 25 Cl
l + A„B l + (200,000)
(0.031)
56 kfl
(c) B — —1.056 MW = 0.053
Z;, ) = (1 + A )Z; — [1 + (50,000)(0.053)]2 MH = 5.30 GB
50 CI
= 19.0 mdl
1 + A B 1 + (50,000)
(0.053)
10
9
Chapter 12
20. (a) in(VF)' (1 + A@{ )Zin — (1 + 220,000)6 MCl = 1.32 x 10' 2 Al = 1.32
Tf2 out(VF) '
1+ A 1+
220,000
(b) Zj%( = (1 + A () in— (1 + 100,000)5 Mfl = 5 x 10" D = 500 Gf2
Z„, 60 f2 = 600
1+A 1 + 100,000
(c) Z; — (1 + Ag()Zin — (1 + 50,000)800 kf2 = 40 Gf2
Z ,p (VF)'
21. in(I ; = 10 kfl
(a) ) R- 10 kfl =
B = R -b' f = 160
R
0.0625
kf2 Z„, 40 Al
oin(I)' = 5.12 mdl
I + A B 1 + (125,000)
(0.0625)
100kK
B—
—1.1 MW= 0 090
Z„, _ 50 Ci
= 7.41 md
1+A B 1 + (75,000)
(c) Z;.(I) (0.90)
i' 470 Ci
B
_ 470 f2
= 0.045
10,470 F2
Z„, 70 Ci
out(I)' = 6.22 mCl
1+A B
1 + (250,000)(0 045)
Section 12-6 Bias Current and Offset Voltage Compensation
22. (a) Rg 2p jg — 75 D placed in the feedback path.
os' 42 jffA — 40 yA ' 2
AJ fy (1)(2 )(75 O) = 150 yV

(b) K UT(error)'
23. (a) fi, = HiJ 7t = 2.7 kit | 560 kfl = 2.69 kf2 (b)
fi, = R, J fiJ ——15. kf2 J 47 kf2 = 1.45 kf2
(c) fi, = fi; J = 56 kf2 J 1.0 MU =
53 kf2
See Figure 12-1.
Figure 12-1
110
Chapter 12
24• AyV = (l)(2 n V ) = 2 n V
TOUT(error)'
OUT(error) 3 5 ITIV
IO' = 175 nV
A
200,000
Section 12-7 Open-Loop Response
26. A — 120 dB — 50 dB = 70 dB
27. The gain is ideally 175,000 at 200 Hz. The midrange dB gain is
20 log(175,000) = 105 dB
The actual gain at 200 Hz is
d,(dB) = 105 dB — 3 dB = 102 dB
A — log = 125,892
BW — 200 Hz
28.
Rf (1.0 kf2)(5 = 1.67 kf2

3kHz
/
V„ _ 1
29. = 0.997
(a)
f
’”' 2fq
in
(b) = 0.923
(c) = = 0.707
2 2
’ + $12 kHz
’" 1+
\12 kHzd
= 0.515
20 kHz x 2
12 kHz
(e) = 0.119
x2
Chapter 12
80,000
= 79,603
100 Hz
1+ 1 2
+
A(f mid) _ 80,000

= 56,569
A (mid 1 80,000
= 7960
80 000
- so
1MHz
+
f
l _ l
31. (a) f —2ufiC 2c(10 kf2)(0.01 = 1.59 kHz; ß= tan°'
yF) 2 kHz
1 _ 1 —— = —7.17°
2nfiC 2s(1.0 kfl)(0.01 = 15.9 kHz; 8= tan*’ f f tan*’
yF) 2 kHz
1 _ 1 = t an 1 =—
2n7tC 2c(100 kf2)(0.01 = 159 Hz; ß= tan*' f $159 85.5°
yF) Hz$
32. (a) ß= tan*' = =—

tan 0.674°
(b) &— tan*' f —— = —2.69°
f tan*'
850 Hz
(c) f= tan*' = tan* = —5.71°
f \8.5 kHzJ
(d) ß= tan*' f —
— $ =—
tan*' 8:5
45.0°kHz
(e) ß= tan*l f ——
f
25 kI{z
8.5
=—
71.2°
a(f)
tn-' ß= tan*' f ——
we)
= —84.3°
f tan*' 85
See Figure 12-2. 8.5
112
Chapter 12
G(degrees)
Figure 12-2
33. (a) A (g;p — 30 dB + 40 dB + 20 dB = 90 dB
(b) &, = — =-tan’ = —86.6°

tan°' f ' 600 Hzd
Q=— =— = —11.3°
tan*’ tan*’
10 kH‘
Q = — tan*' = — tan*' =—
2.86°
&, , = —86.6° — 11.3° — 2.86° — 180° = —
281°
34. (a) 0 dB/decade

(b) —20 dB/decade
(c) —40 dB/decade
(d) —60 dB/decade
Section 12-8 Closed-Loop Response

35. (a) A ()- — = —30.9; A,/({)(dB) = 20 log(30.9) = 29.8 dB
1 1
(b) A = 15.7; A,t )(dB) = 20 log(15.7) = 23.9 dB
B 15 kf2/ 235 kfl
(c) A (p) — 1; A,t( )(dB) = 20 log(1) = 0 dB

These are all closed-loop gains.
36. BWpf — BWpJ I + BA (miv) — 1500 Hz[l + (0.015)(180,000)] = 4.05 MHz
113
Chapter 12
A — A f rj—
—
(28,184)(750 Hz)
= 3843
A (dB) —
— 20 log(3843) = 71.7 dB
a/‹( i) _ (28,184)(750 Hz) = 3843

f( 5.5 kHz
Unity-gain bandwidth = A fq p — (3843)(5.5 kHz) = 21.1 MHz
Unity - gain BW 28 MHz

- 2 8 MB.
A 1 ”
100kD
(b)' A ( ) 2.2 kf2= —45.5
2.8 MHz
BW 45.5 = 61.6 kHz
12 kf2 = 13
1.0 kCl
2.8 MHz
BW — 13 = 215
(d) A 1 M£2 = —179

5.6
kf2
BW _ 2.8 MHz
179 = 15.7 kHz
150 kD
40. (a) A
= 6.8
22 kf2
A f o (120,000)(150 Hz)
= 2.65 MHz
BW ——f( A— 2.65 Mh 6.8
z
(b) A 1.0 Mai
= 100
10 kf2
A f (p ) (195,000)(50 Hz)
= 97.5 kHz
BW ——fq — 97.5
kHz A 100
114
Chapter 12

41. (a) Faulty op-amp or open fi,
H) $2 open, forcing open-loop operation
42. (a) Circuit becomes a voltage-follower and the output replicates the input.
(b) Output will saturate.
(c) No effect on the ac; may add or subtract a small dc voltage to the output.
(d) The voltage gain will change from 10 to 0.1.
43. The gain becomes a fixed —100 with no effect as the potentiometer is adjusted.

44. The push-pull stage will operate nonlinearly if Do or Do is shorted, Q or Qz is faulty, the op-amp stage has
excessive gain, or ipf6 is open or shorted.
45. If a 2.2 M£) resistor is used for $3. the gain of the op amp will be ten times too high, probably
causing a clipped output waveform.
46. IfD, opens, the emitter current of Q is diverted to the base of Q2 producing saturation. Q3
will also saturate. The result is a signal voltage of 0 V on the output.
Data Sheet Problems

47. From the data sheet of textbook Figure 12-67:
B — 47 k 470 f2
1 + 470 ii = 0.0099
A ; — — 200,000
(typical) Z; — — 2.0
Mf2 (typical) Z„ — —
25 Cl (typical)
Z;,(pt)= (1 + 0.0099)
48. From the dataMCi)
(200,000)(2 sheet=in(1Figure 12-
67: + 1980)2 MH = 3.96
GCI
49. A - 50 V/mV = 50 V _ 50,000 V = 50,000

lmV
1V
50. Slew rate = 0.5 V/

AK= 8 V — (—8 V) = 16 V
_ 16 V - 32
0.5 V/ps
115
Chapter 12
Advanced Problems
51. Using available standard values of fi/= 150 kf2 and i 1.0
kfl, '
+ 1 50 a = isi
1.0 kf2
1’0 kfl
B — l51k 2= 6.62 x 10 '
Z;, = (1 + (6.62 x 10*')(50,000))300 kfl = 99.6
Mfg
The
R —compensating
R f — 150 resistor
kf2 J is
1.0 kf2 = 993
R
f2
See Figure 12-3.
150 kf2
741
9
1
0
k
f
l
8
680 kfl
10 2
kf2
f
741
2
Figure 12-3
9.1 kf2 750 f2
52. Figure
See Figure 12-4. 2% tolerance resistors are used to 12-4
achieve a 5%
gain tolerance.
53. From textbook Figure 12-68: R
f — 10 kHz at A, — 40 dB =
100 In this circuit
33 kf2 +l5 V
330 f2
A 333 U = 100.1 z 100
The compensating resistor is 741
R — 33 kI2 J 333 II = 330
Ci 330
f2
See Figure 12-5. 10 kf2
-15 V
Figure 12-5
116
Chapter 12
54. From textbook Figure 12-69:
For a +10 V output swing minimum, the load must be 600 Cl for a +10 V and - 620 ) for
—10 V. So, the minimum load is 620 ii.
55. For the amplifier,
— — 2100
A— k€2
kf2 = —50
The compensating resistor is
R — 100 kf2 J 2 kf2 = 1.96 k 2 - 2 kf2
See Figure 12-6.
100 kf2
+l5 V
2
k
f
l
7
4
1
k
f
2
10 kfl
A — lo = O =
200 g
—
1
20 5
EWB/Multisim Troubleshooting Problems F
W
i
The solutions showing instrument connections for Problems 57 through 72 are available
g in the
Solutions folder for Chapter 12 on the CD-ROM provided with the textbook. The solutions
u may be
accessed using the password EDSFLOYD. The faults in the circuit files may be accessed
r using the
password book (all lowercase). e
57. fi/ open 1
2
58. i pen -
6
59. fif leaky
56. From textbook Figure 12-68 the maximum 741 closed loop gain with BW —
60. 5R;kHz
shorted
is approximately 60 dB — (20 dB)1og(5 kHz)/1 kHz) = 60 dB — (20 dB)
(0.7) = 46 dB Aqp) — — 20 log A
61. fif shorted
62. Op-amp input to output open
117
Chapter 12
63. fif1eaky
64. Ri leaky
65. fi; shorted
66. fi; open
67. fi/ open
68. fi/ leaky
69. fiy open
70. fif shorted
71. i open
72. i leaky
118
Chapter 13
Basic Op-Amp Applications
Section 13-1 Comparators
1. V — A V; — (80,000)(0.15 mV)(1.414) = 16.9 V
Since 12 V is the peak limit, the op-amp saturates.
gy p) 24 V with distortion due to clipping.
2. (a) Maximum negative

(b) Maximum positive
(c) Maximum negative
3. p $(+ 10 18 kfl
110 V = 2.77 V
65 kfld
V)
10 V)' 68 k: (—10 V) = —277 V
OLTP' i%
z
4. HYS' UTP LTP= 2.77 V — (—2.77 V) = 5.54 V
5. See Figure 13-1.
(a) (b)
Figure 13-1
119
Chapter 13
pz ’18 kCi
6. 11 V = 3.88 V
1+ 2 51
LTP' —
3.88 V HYS' LTP' 3.88 V — (—3.88 V) = 7.76 V
68 kf2
UTP V = 3.43 V
218 kfl$
LTP' —3.43 V
HY UTP LTP' 3.43 V — (—3.43 V) =
S' 6.86 V
7. When the zener is forward-biased:
l8kM
kf2 + 47
ou (0•277) Kpp — 0.7 V
K„,(1
t — 0.277) = —0.7
V
— 0.7 V
1 — 0.277- —0.968 V
When the zener is reverse-biased:

18 kf2
K„ t + 6.2 V
18 kf2 + 47
kf2
V „ — (0.277) ..t + 6.2 V
out(! 0 •277) = +6.2 V
+ 6.2 V
— — +8.57
0.277
8 K„, + (4.7 V + 0.7 V)
.
5.4 V
1— - +6.55 V
p' 0.175
(0.175)(+6.55 V) = +1.15 V
LTP' (0.175)(—6.55 V) = —1.15 V
See Figure 13-2.
Figure 13-2
120
Chapter 13
Section 13-2 Summing Amplifiers
9. (a) K = — f (+1 V + 1.5 V) = —1(1 V + 1.5 V) = —2.5 V

Ri
22 kf2
(0.1 V + 1 V + 0.5 V) (1.6 V) = —3.52 V
= 10 kfl
10. (a) K2, = 1 V

zz'
1•8 V
1V
22 = 45.5 QA
kf2
1.8 V
2
' 22 kf2= 81.8 /iA
f A1 + A2' 45.5 /tA + 81.8 QA = 127
(C OU /= —(127.27 QA)(22 kCl) = —2.8 V

) T'
11. 5 KB, VG
=
Rf — 5fi = 5(22 kf2) = 110

kfl
12. See Figure 13-3. 10kf 1.25 kf2

l
l0kf
l
10kM
g ' '0 kf2
Figure 13-3
R
13. Y ’
R, ’2 -F
——— 3
10 kfl 10 k
$10
k $3 V +
$2 $6 V
\10
V+ kfld 33 91 kf2 \180 kflJ
= —(2$10
kf2d
V + 0.91 V + 0.33 V + 0.33 V) = —3.57 V
k
$3 V +
OUT 3 .5 7 V
= 357 ,trA
121
Chapter 13
14. /= 100 kfI
Input resistors: fi, = 100 kf2, fi@ = 5 kf l. 3' 4' 12.5 kf2,
25 kf 2,
fi, = 6.25 kfJ› 6' 3.125 kfl
Section 13-3 integrators and Differentiators

dV„, Vp q_ 5V
is = —4.46 mV/
dt RC (56 kfl)(0.02 QF)
Figure 13-4
17. I
——
2V
= +(15 kf2)(0.05 ,uF) 0.5 = +3 V
See Figure 13-5. msg
+3 V
Figure 13-5
122
Chapter 13
19. For the 10 ms interval when the switch is in position 2:
k V „ q_ 5V
5V
(10 kf2)(10 QF) = —50 V/s = —50 mV/ms
kV„it- (—50RC
mV/ms)(10 ms)0.1= —500
s mV = —0.5 V
For the 10 ms interval when the switch is in position 1:
AU„, _ K _ — 5V
—5V
_ it RC (10 kf2)(10 /rF) 0.1s = +50 V/s = +50 mV/ms
ou (+50 mV/ms)(10 ms) = +500 mV = +0.5 V
Seet Figure 13-6.
Figure 13-6
20. B
'
l 2
—
Normally, <B should be
+ (4.3 V + 0.7 V) — +10 V
1 — 0.5
Since the negative portion of GB is only —1.4 V, zener $2 ne st be shorted:
B -(0 V + 0.7 V) _ 1.4 V
' 1—
0.5
21. The output should be as shown in Figure 13-7. p2 has no effect on the output. This indicates
that is open.
Figure 13-7
123
Chapter 13
22. A—
2.8kn = 0.25
10
kf2
The output should be as shown in Figure 13-8. An open
(Kt is missing) will produce the
observed output, which is incorrect.
Figure 13-8
23. The Do input is missing (acts as a constant 0). This indicates an open 50 kf2 resistor.

24. The first thing that you should always do is visually inspect the circuit for bad contacts or
loose connections, shorts from solder splashes or wire clippings, incorrect components, and
incorrectly installed components. In this case, after careful inspection, you will find that the
middle op-amp IC is installed incorrectly (notice where pin 1 is as indicated by the dot).
25. An open integrator capacitor will cause the output of IC2 to saturate positively.
26. If a 1.0 kf2 resistor is used for fi„ the output of IC2 will be ten times larger for the sample-
and-hold operation most likely causing the integrator to ramp into saturation.
Advanced Problems
27. For a 741S op amp slew rate and 500 kHz sample pulse rate, the ramp up and
with a 12 V/ ramp down must
take
1 =2
500 kHz
With a fixed interval of 1 for ramp up, this leaves a 1 ramp down interval.
If — t = —8 V as in the system application, with a —8 V/ps ramp down rate, the
ramp down can accommodate an 8 V ramp-up peak corresponding to +8 V input. However,
if full slew rate is utilized as a —12 V reference voltage is used, a +12 V input can be
accommodated.
28. A maximum of +0.5 can be used.
29. 100 mV/ 5 V = 5 V/fi;C

RiC — 100 = 50
mV/ps For C -
3300 pF:
50
3300 pF = 15.15 kf2 = 15 kf2 + 150 f2
124
Chapter 13
For a 5 V peak-peak triangle waveform:
3300 pF
tramp up tramp _ 5V = 50
d ‘ 100 15 kf2 150 f2
i = 2(50 ps) = 100 mV/ps
f —— 1/100 ps = 100
kltz MC1741
See Figure 13-9.
10
kf2
Figure 13-9

30. fi, open
31. Op-amp inputs shorted together
32. Op-amp + input to output shorted
33. D shorted
34. Top 10 kf2 resistor open
35. Middle 10 kCl resistor shorted
36. fi/1eaky
37. fi/ open
38. C leaky
39. C open
125
Chapter 14
Special-Purpose Op-Amp Circuits
Section 14-1 Instrumentation Amplifiers
fii = l + 100 kf2 = 101

VG 1.0
kf2 100 — ioi
’G 1.0
k£2
27t _ + 200 kf2
= 201
VG 1.0 kD
3. V yf i»tz) 202(10 mV — 5 =1.005 V
i»({) ) '
Ag( ( mV)
4.
A — 1 + 2A
’G
Rc —
— 2(100 k£2) _ 200 kf2 = 200.2 D - 200 D
2A
1000 — 1
A-1 999
50.5 kD
G
A, — 1
A—
—
50 5 k + i - si.s
1.0
kit
6. Using the graph in textbook Figure 14-6,
BW —- 300 k8z
7. Change G to
50.5 k 1 _ 50.5 k£l - 2.2 kf2
A, — 1 24 — 1
8 P 50.5 kf2 50.5 kf2 - 2.7 kf2

. G
A -1 20 — 1
126
Chapter 14
Section 14-2 Isolation Amplifiers

9• A5totat) (30)(10) = 300
18 kCi
10. (a) A — R f,+ + 1 = 3.2
8.2 kf2
fi;,
A
v2 /J+ 15 150
kf2 kf2
+i - i
A fitot) Ay A vz (3.2)(11) = 35.2
i /J
R„ _ 330 kf2
+ 1 = 331
1.0
fi;,
kf2
+ 47 kf2
Av2
“il + 1 =15 kf2+ 1 = 4.13
Aq —A (3 31)(4.13) = 1,367
11. A z—
Av24.13 (from Problem
10)
A A z — 100
' +1 —— 100
= 24.2
A„ 4.13
Change fi/(18 kCi) to 23.2 kf2.
Use 23.2 kf2 + 1% standard value resistor.
12. App — 331 (from Problem 10)

Ay JAvz 440
_ 440
i2 331= 1.33
+ 1 = A,2
Change fi/(47 kf2) to 3.3 kfl.
Change fi; (15 kf2) to 10
kCi.
13. Connect pin 6 to pin 10 and

pin 14 to pin 15.
Section 14-3 Operational

Transconductance
Amplifiers (OTAs)
14. gp —
15. Z .‹ - gz in — (5000 QS)(100

mV) = 500
V „— — I„,R, — — (500
)(10 kfi) = 5 V
16. gg — 127
I — gpV; —
(4000 )(100 mV) =
Chapter 14
JI
17. B AS + 12 V — (—12 V) — 0.7 V _ + 12 V — (—12 V) — 0.7 V _ 23.3 V =
BIA 220 kf2
From the106 S
graph in Figure 14-44:
go — BIAS (16 / ) 220 kfl
(106
A— — “' — — — gpRz — (1.70 mS)(6.8 kit) =
) = 1.70 mS
“' 11.6
in
18. The maximum
in
voltage gain occurs when the 10 k ) potentiometer is set to 0 A) and was
determined in Problem 17.
Aqg — 11.6
The minimum voltage gain occurs when the 10 kf2 potentiometer is set to 10 kfl.
BIAS' + 12 V — (—12 V) — 0.7 V _ 23.3 V =
gp — (16
101
QS/QA)(101 QA) = 1.62 mS
Aqp; — gpRz — (1.62 mS)(6.8 kf2) = 11.0
220 kfl + 10 kf2 230 kf2
19. The KuoD Waveform is applied to the bias input.
The gain and output voltage for each value of MOD is determined as follows using
K— — 16 QS/ . The output waveform is shown in Figure 14-1.
For <MoD' +8 VI
8 V — (—9 V) —
16.3 V
JBIAS'
0.7 V 39 kCi = 418 //A
“
39 kfl
A — “' — — “' “ — g Rz — (6 69 mS)(10 kCl)
go — BIAS - (16 QS/QA)(418 ) = 6.69
= 66.9
mS in in “ “
V„ — A V; — (66.9)(100 mV) = 6.69 V
For <MoD' +6 V:
BIAS' +
6 V —39(—9 V) — 0.7 V39 kfl V
_ 14.3
go — BIAS - (16 / )(367 ) = 5.87 = 367 QA
km
mS
A — “’ — — “ ’ — ggRz — (5.87 mS)(10 kf2) =
58.7 in in
V — A V; — (58.7)(100 mV) = 5.87
V
128
Chapter 14
For MoD' +4 V:
4 V — (—9 V) —
BIAS' 12.3 V = 315
0.7 V 39 kf2 39 kf2
+
g — BIAs (16 /tS/yA)(315 ) = 5.04 mS
A — “’ —
— “' — g„,Ptz — (5.04 mS)(10 kD) =
50.4
in in
V„ — A V; — (50.4)(100 mV) = 5.04 V
JFor
' <MoD' +2 V:
B AS + 2 V — (—9 V) — 0.7 V _ 10.3 V = 264 A
39 kul
39 kf2
A — “' —
— “’ — ggRz — (4.22 mS)(10 kf2) =
g - BIAS - (16 ,uS/ )(264 ) = 4 22
42.2
mS in izi
V øf — Ay in— (42.2)(100 mV) = 4.22 V
BIAS'
+ 1 V —39(—9
kflV) — 0.7 V39_ 9.3
kf2 V
= 238
g - BIAS - (16 / )(238 yA) = 3.81 mS
A — “’ — — “ ’ — g„,fiz —
— (3.81 mS)(10 kf2) =
38.1 in in
Vpy$ — Ay in — (38.1)(100 mV) = 3.81
V
Figure 14-1
-i- 9V — (—9 V) — 0.7 V _ 17.3 V = 444

B
20. A
TRIG(+
39 kf2 39 kfl
)' BIA 1 = (444 )(10 kD) = +4.44
TRIG(—) V
' BIA 1' (—444 )(10 kØ) = —
4.44 V
129
Chapter 14
21. See Figure 14-
2.
Section 14-4 Log and Antilog Amplifiers

22. (a) ln(0.5) = —0.693
(b) 1n(2) = 0.693
(c) 1n(50) = 3.91
(d) In(130) = 4.87
23. (a) local(0.5) = —0.301 (b)

logic(2) = 0.301 (c)
logic(50) = 1.70 (d)
24. log ic(130)x ==2.11

Antilog IN or e‘, depending on the base used.
INV In = e" 6 = 4.95
INV log = 10" 6 = 39.8
25. The output of a log amplifier is limited to 0.7 V because the output voltage is limited to the
barrier potential of the transistor’s pn junction.
26. K„, - — (0.025

V)1n ’s
in
= —(0.025 V)ln(365.9) = —148 mV
3V
= — (0.025 V)1n
(100 nA)(82 kfl)
27. K„, z — (0.025 V)1n in
EBO iit
1.5 V
= — (0.025 V)1n(60 nA)(47 = —(0.025 V)1n(531.9) = —157 mV
kfl)
130
Chapter 14
0.225 V
V„, — —(10 kD)(60 nA) e’ 25 mV) = —(10 kD)(60 nA)e9 — —(10 kI2)(60 nA)(8103) = —4.86
V
29. U„ qp) — (0.025 V) 1V
= —(0.025 V) ln (60 nA)(47
ln I EB R in
= —(0.025 V)ln(354.6) = —147 mV kf2)
’in
ougmin) — (0.025 V) 100 mV
= —(0.025 V) In (60 nA)(47
In /
= —(0.025 V) ln(35.5) = —89.2
EBO’›n mV kf2)
The signal compression allows larger signals to be reduced without causing smaller
amplitudes to be lost (in this case, the 1 V peak is reduced 85% but the 100 mV peak is
reduced only 10%).
Section 14-5 Converters and Other Op-Amp Circuits

30a (d) m' z' 4.7 V
_ V 4.7 V
= 4.7 mA
1.0 kf2
R;
V
=6V
Ri — 10 kf
10 kf2 + 100 f2 = 5.1
kf2
Figure 14-3
131
Chapter 14
Troubleshooting Problems
32. The circuit on this board is represented by the schematic in textbook Figure
14-38. For the isolation amplifier IC,:
3
_ 330 kf2
+ 86 + 1 = 3.84 + 1 = 4.84
fi25 + 1 = kf2
120 kf2 + 1 = 2.2
fi4 100 kD
A t fp} — AgjA z' (4.84)(2.2) = 10.6
For the IC filter:

A i - 3.3 kf2 + 1 = 0.59 + 1 = 1.59
g 5.6 kCi
1
l
2 7tC = 106 Hz, so the 50 Hz input is in the
For IC3: midrange.
2 (100+
A —
kF2) l 16_125 kf2.0 = 125, assuming ›6 is set at 25 k 1.
"
(0.015
TP 1 is at othe outputkf2of ICT:
Vp , =QF)
(1.59)(10.6 mV) = 16.9 mV @ 50 Hz
TP 2 is at pin 2 of IC2:
, = 10.6 mV @ 50 Hz
8.9 kf2d
TP 3 is at the output of IC,:
3' A )V — (10.6)(l mV) = 10.6 mV @ 50 Hz
TP 4 is at the supply voltage of +15 V DC.
TP 5 is at the output of IC3:
TP 5' A V t = (125)(16.9 mV)
= 2.11 V @ 50 Hz
33. The IC, filter was found in Problem 32 to have a critical frequency of 106 Hz. Therefore, the
1 kHz input signal is outside of the bandwidth.
TP 1 0 V
TP 2 = 0 V
The voltage gain of IC, was found in Problem 32 to be 10.6.
TP 3' (10.6)(2 mV) = 21.2 mV @ 1 kHz
TP 4' +15 V DC
TP5 = 0 V
132
Chapter 14

34. VG leaky
35. fi open
36. Rf open
38. Lower 10 kfl resistor open
133
Chapter 15
Active Fitters
Section 15-1 Basic Filter Responses
1. (a) Band-pass
(b) High-pass
(c) Low-pass
(d) Band-stop
2. BW —f — 800 Hz
1 _ 1
2cfiC 2c(2.2 kf2)(0.0015 = 48.2) Hz
No, the upper response roll-off due to internal device capacitances is unknown.
4. The roll-off is 20 dB/decade because this is a single-pole filter.
5. BW —f —fu - 3.9 kHz — 3.2 kHz = 0.7 kHz = 700 Hz

/o' - (3 2 )(3 9 ) = 3.53 kHZ
to 3. 3 kHZ
- 5.04
BW 700
Hz
6. Q-
BW
/o' Q BW) — 15(1 kHZ) = 15 kHz
Section 15-2 Filter Response Characteristics

7. (a) 2nd order, l stage
1.2kO
DF — 2 —
’4
3
= 212—kO = 2 — 1 = 1 Not
Butterworth
(b) 2nd order, 1 stage
560 CI Approximately Butterworth
DF — 2 —
’ 1.0 kfI = 2 — 0.56 =
'=2—
1.44 4
(c) 3rd order, 2 stages, 1st stage (2 poles):
DF — 2 — ' = 2 1.0 — 330 D =

A 4
1.67 kCi
2nd stage (1 pole):
DF — 2 — 6 = Not Butterworth
1.67
134
Chapter 15
8. (a) From Table 15-1 in the textbook, the damping factor must be 1.414; therefore,
3
= 0.586
’4
3' 0.586 4' 0.586(1.2 kf2) = 703 f2
Nearest standard value: 720 II
3
(b) =0.56
4
This is an approximate Butterworth response
(as close as you can get using standard 5% resistors).
(c) From Table 15-1, the damping factor of both stages must be 1, therefore
3' 7 kf2 (for both

4' stages)
9. 6
(a) Chebyshev
(b) Butterworth
(c) Bessel
Section(d)15-3 Active Low-Pass
Butterworth Filters
10.
High Pass
1st stage:
4 6.8k
DF — 2 — = 3
2nd stage:
1.0 k
2—
7
DF
2 —2— = 2 — 6.8 kO = 0.786
= 1.85
From Table 15-1 in the textbook:
1st stage DF — 1.848 and 2nd stage DF — — 0.765
Therefore, this filter is approximately Butterworth.
Roll-off rate = 80 dB/decade
1 1
= 190 Hz
1
11. f —
— 2 (4 7 )(6 8 )(0 22 F)(0 1 F)
2 A2 2 2 t 5 A6 C 4
3
12. R - R — 22 C3' = R6 and C — CC=,
p5
C4
Let C — 0.22 /rF (for both stages).
1 1
2 2 2"
2AC
C
_ 1 _ 1
2 C 2c(190 Hz)(0.22 = 3.81 kfl
QF)
Choose fi = 3.9 kfI (for both stages)
135
Chapter 15
0.22 jiF 0.22 pF 0.22 JiF
4.7 kf2 6.8 kfl

4.7 kf2 6.8 kf2
4.7 k£2 6.8 k£2
680 f2 3.9 k£l t0 kLJ
0.I jiF 0.1 jiF 0.1 JiF

6.8 kfl 6.8 kfl
Figure 15-1

Pro 2 e Pro e
(a) (b)
Po e 2 Po e
(c)
(d)
(e)
Figure 15-2
Section 15-4 Active High-Pass Filters

15. Exchange the positions of the resistors and the capacitors. See Figure 15-3.
4.7 kf2
4.7 kf2
0.22 pF 0. l jiF
0.22 jiF 0.1 pF
6.8 kf2
6.8kH 6.8kG 6.8 kfl 5.6 kfI
Figure 15-3
136
Chapter 15
16. /, =
2MC
190 Hz = 95 Hz
/o
' 2
_ 1 _ 1
2J,C 2c(95 Hz)(0.22=QF)7615 f2
Let R —— 7.5 kf2. Change all resistors to 7.5
kfl.
17. (a) Decrease fi, and or Cl and
Cz.
(b) Increase fi, or decrease $4
Section 15-5 Active Band-Pass Filters

18. (a) Cascaded high-pass/low-pass filters
(b) Multiple feedback
(c) State variable
19. (a) lst stage:

1 _ 1
2 AC 2 (1.0 kf2) = 3.39 kHz
(0.047 QF)
2nd stage:
c2' 1 _ l
2v7tC 2c(1.0 kF2)(0.022 = 7.23
kHz
J0' QF) 2 (3 9 ) 2 3 7 ) = 4.95 kHz
BW — 7.23' kHz — 3.39 Hz = 3.84
kHz
z _ i + 1 47 kfl + 1.8 kf2
(b) /o' = 449 Hz
2s 2 3 2c(0.022 QF) (47 kfl)(1.8 kf2)(150
Q kfl)
0C 3'
449 Hz)(0.022 )(150 kfl) = 4.66
/ 0 449 Hz
BW — Q 4.66 = 96.4 Hz
(c) For each integrator:

1 _ l
2cAC 2 (10 kf2) = 1.59 kHz
(0.001 QF)
/o '/ p —* 15.9 kHz 1 $560 kf2 (56 + 1) = 19
3 fi6+ i — 3 10 + 1 =3
kf2
BW /o 15.9 kHZ = 838 Hz
Q 19
137
Chapter 15
20. Q—
—
3
A6
Select $6 = 10 kf2.
5' 3 6Q 6' 3(1.0 kf2)(50) — 10 kf2 = 150 kfl — 10 kf2 = 140

kfl = 1.33 kHz
/o
' 2s(12 kf2)(0.01yF)
BW to _ .33 kH * - 26.6
Q
50
Section 15-6 Active Band-Stop Filters
R
LP
State
variable
filter
Figure 15-4
22. %
-f 1
2cAC
Let C remain 0.01 QF.
= 133 kf2
2 o C 2J(120 Hz)(0.01yF)
Change fi in the integrators from 12 kCl to 133 kC1.

23. $4 shorted
24. fi3 open
25. C3 shorted
26. $5 open
138
Chapter 15
27. R open
28. p shorted
29. Rd open
30. C2 open
31. $7 open
139
Chapter 16
Oscillators
Section 16-1 The Oscillator
1. An oscillator requires no input other than the dc supply voltage.
2. Amplifier and positive feedback circuit
Section 16-2 Feedback Oscillator Principles

3. Unity gain around the closed loop is required for sustained oscillation.
A —A —1
1 i
B= — = =
A
0.0133
75
4. To ensure startup:
At > 1
since A —
— 75, B must be greater than 1/75 in order to produce the
condition
A > 1.
For example, ifB — 1/50,
50J
Section 16-3 Oscillators with RC Feedback Circuits
6. ,=
i i = 1.28 kHz
2cfiC 2c(6.2 kfI)(0.02
QF)
7. 7tt = 2 2
fi, _ 100 kf2
= 50 k
2 2
8. When dc power is first applied, both zener diodes appear as opens because there is
insufficient output voltage. This places fi, in series with fi„ thus increasing the closed-loop
gain to a value greater than unity to assure that oscillation will begin.
9. if {A — 1)(7t, + r ) = (3 — 1)(820 II + 350 Al) = 2.34 kD
140
Chapter 16
= 10.6 kHz
2c(1.0 kf2)(0.015 QF)
1
11. B
— 29
A = 29
R/ — ApJ i — 29(4.7 kfl) = 136

kf2
M ' 691
2.v((4.7 k£l)(0.02 Bz
r
QF))
Section 16-4 Oscillators with LC Feedback Circuits
12. (a) Colpitts: C', and C', are the feedback capacitors.
l
2:v C T
C, C3 (100 QF)(1000 pF)

=
90.9 pF
C, + C 3 1100 pF
= 236 kHz
2c ( )(90 9pF)
(b) Hartley:
LT 1 + 2' 1.5 mH + 10 mH = 11.5 mH
i
= 68.5 kHz
2c ( 5 )(470pF)
13. 50 pF
B — 470 pF= 0.106
The condition for sustained oscillation is
1_ 1
A—
—B = 9.4 0.106
Section 16-5 Relaxation Oscillators

14. Triangular waveform.
= 1.61 kHz
4 1 3 4(22 k I)(0.022
QF) 18 k I
141
Chapter 16
15. Changefto 10 kHz by changing
fi,:
= 3.54 IU
4/C 4(10 kHz)(0.022 QF) \18 kf2
Rd
’F
16. T-
RC
5 47 kf2
12 V - $12 V =
3.84 V
fi 4 + Rd 147 kfl
PUT triggers at about +3.84 V + 0.7 V = 4.54 V
Amplitude = +4.54 V — 1 V = 3.54 V
22 kf2
V —
— ° (—12 V) = $122 (—12 V) = —2.16 V
T --
4.54 V —1 V =
328
l 2.16 V
T 328 =3.05kRz
See,us
Figure 16-1.
(100 kf2)(0.002 QF)
1
4.WV
1 Vi
328 his
Figure 16-1
17. 5 V. Assume U = 1 V.
>c'
5
12 V
4+ 5
Change p4 to get VG' 5 V.
5 V(fi4 + 47 kf2) = (47 kf2)l2 V
4(5 V) = (47 kf2)12 V — (47 kf2)5
V (12 V — 5 V)47 kK
5 = 65.8 kf2
p4
V
142
Chapter 16
18. T
—
3V
(4.7 kfl)(0.001 10 ps + 1 V = 7.38 V
Yp ( %)) p QF)
F' 7•38 V 1 V = 6.38 V
Section 16-6 The 555 Timer as an Oscillator

l
19. (10 V) = 3.33 V
CC
3 3
2 2
(10 V) = 6.67
3 ’CC V
3
20. f — (Rf + 2
1.44 _ 1.44 = 4.03 kHz
(1.0 kO + 6.6 kf2)(0.047
QF) z)C
21. —
f—
1.44
(A,
_ + 2A2 )C
1.44, _ 1.44
ext = 0.0076
,uF (fi, + 2fi2 )/ (1.0 kf2 + 6.6 kf2)(25
kHz)
22. Duty cycle (dc) = R,+ 2 100%
dc(fi, + 2fi,)' ( i +p z)l00

75(3.3 kf2 + 2 z)' (3.3 + z) )00
75(3.3 k£2 + 150Ai = 100(3.3 kCi) + IOOA
150At — 100 2' 100(3.3 kCi) — 75(3.3
kC1)
25(3.3 kf2
5p02' 25(3.3
)kf2)—
50 1.65

23. Drain-to-source shorted
24. C, open
25. Collector-to-emitter shorted
143
Chapter 16
26. R open
27. fi, open
28. R leaky
144
Chapter 17
Communications Circuits
Section 17-1 Basic Receivers
1. See Figure 17-1.
2. See Figure 17-2.
AGC
Speaker
Figure 17-2
3. PL 680 kHz + 455 kHz = 1135 kHz

O'
4. PL 97.2 MHz + 10.7 MHz = 107.9 MHz
O'
5. / = 101.9 MHz — 10.7 MHz = 91.2
fg —
MHz — 10.7 MHz
(always)
145
Chapter 17
Section 17-2 The Linear Multiplier
— 12 VJ — 0.7 V 11.3 V
7. J3 = 739
' (12 kf2 + 2.8 kf2) + 500 f2' 15.3 kf2
2fig _ 2(6.8 kf2)

8. Using /3 from Problem 7: K —
—
= 0.128
R RY I
9. K„, = KV Vz — 0.8(+3.5 V)(—2.9(12
V)kf2)(12
= —8.12kfl)(739 QA)
V
10. Connect pin 4 to pin 9 and pin 8 to pin 12. Apply the input between pins 9 and 12. For a
“true” squaring circuit, the component values must produce a K — 1.
11. (a) K„, = KYC 2' (0.1)(+2 V)(+1.4 V) = +0.28 V

(b) K„, = KV J K,2(0.1)(—3.2
2' V)2 = +1.024 V
— (6.2 V)
— 3 V - +2.07 V
(d) V„, — 6 2 V = +2.49 V
—
Section 17-3 Amplitude Modulation
12. fdif fz — 100 kHz — 30 kHz = 70
kHz ff 'I +/z' 100 kHz + 30 kHz = 130
kHz
9 cycles
1 = 9000 cycles/s = 9 kHz
ms
cycle
1 = 1000 cycles/s = 1 kHz
fdfi ms J2' 9 kHz — l kHz
= 8 kHz
f -f + fz — 9 kHz + 1 kHz
= 10 kHz
14. f - 1000 kHz

fd — 1000 kHz — 3 kHz = 997 kHz
f — 1000 kHz + 3 kHz =
1003 kllz
146
Chapter 17
15. l 8 cycles —
1.8 MHz
2 1 cycle
10 ps - 100 kHz
Sniff —? —J2 1.8 MHz — 100 kHz = 1.7 MHz
p! !! f +/z' 1.8 MHz + 100 kHz = 1.9 MHz f,
— 1.8 MHz
16. / = 1.2 MHz by inspection

f„ — f, — fJ, — 1.2 MHz — 1.1955 MHz = 4.5
kHz
+ /„„„ 847kHz + 853k/" Neo

/„ - f, — fJ,2 — 850 kHz — 847 kHz2 = 3
rain
kHz
18. fJ, („„„ — 600 kHz — 3 kHz = 597 kHz
fJ, („„ ) — 600 kHz — 300 Hz = 599.7
kHz
f„„„(„„„) — 600 kHz + 300 Hz = 600.3
kHz
/,„„,(„,p) = 600 kHz + 3 kHz = 603 kHz
See Figure 17-3.
Figure 17-3
Section 17-4 The Mixer
19. (sin A)(sin B) —

U„,( ) = 0.2 V sin [2 2200 kHz)f]
i»(z)' 0.15 V sin [2J 3300
kHz)f] U„, i)U„,q) = (0.2 V)(0.15 V) 2200 kHz)f] sin [2y3300 kHz)/]
sin [2
(0.2 V2) 0’15 V) [cos 2
3300 kHz — 2200 kHz)r — cos 2s (3300 kHz + 2200 kHz)i]
V„„, — 15 inV cos [2J 1100 kHz)f] — 15 inV cos [2J 5500 kHz)f]
20. QF 'PLO / = 986.4 kHz — 980 kHz = 6.4 kHz
147
Chapter 17
Section 17-5 AM Demodulation

435 kHz 455 kHz 475 kHz 1480 kHz 1500 kHz 1520 kHz
Figure 17-4
435 kHz 455 kHz 475 kHz 20 kHz
Figure 17-5 Figure 17-6
Section 17-6 IF and Audio Amplifiers

24. /, —/p = 1.2 MHz — 8.5 kHz = 1.1915 MHz f
+ fp —- 1.2 MHz + 8.5 kHz = 1.2085 MHz
f — 1.2 MHz
p
PLO — 455 kHz — 8.5 kHz = 446.5 kHz PLO+f g —
/
455 kHz + 8.5 kHz = 463.5 kHz PLO - 455 kHz
25. The IF amplifier has a 450 kHz to 460 kHz passband.

The audio/power amplifiers have a 10 Hz to 5 kHz bandpass.
148
Chapter 17
26. C4 between pins 1 and 8 makes the gain 200. With

R set for minimum input, K;» = 0 V. on(mni)=
AyVn i)= 200(0 V) = 0 V
i(mn
With fi, set for maximum input, in= 10 mV rms. K
,¿pp) = A V; (gq) - 200(10 mV) = 2 V rms
Section 17-7 Frequency Modulation

27. The modulating input signal is applied to the control voltage terminal of the VCO. As the
input signal amplitude varies, the output frequency of the VCO varies proportionately.
28. An FM signal differs from an AM signal in that the information is contained in frequency
variations of the carrier rather than amplitude variations.
29. Varactor
Section 17-8 The Phase-Locked Loop (PLL)

Figure 17-7
31. (a) The VCO signal is locked onto the incoming signal and therefore its frequency is equal
to the incoming frequency of 10 MHz.
(250 mV)(400mV)
—" ’ ’* COS@ e cos(30° — 15°) = (0.050)(0.966) = 48.3
2 2 mV
32. Of — +3.6
kHz, K—— °^ + 3.6
4 kHz
V + 0.5 V
33. K — 1.5 4 V — +0.67
kHz/V, V
K — °f-
Of — KlsV — (1.5 kHz/V)(+0.67 V) = 1005 Hz
149
Chapter 17
34. For a PLL to acquire lock the following conditions are needed:
(l) The difference frequency.lb —â must fall within the filter’s bandwidth.
(2) The maximum frequency deviation of the VCO frequency, bfgf, must be sufficient
to permit/t to change to equals.
35. The free-running frequency:

1.2 _ 1.2 = 233 kHz
4R,C, 4(3.9 kf2)(330pF)
The lock range:
8/ + K8(233
CT kHz)18
_+V 18
1.864 MHz _ +104 kRz
The capture range: V
q_+ 1 2s(103.6 kHz) _+ l 2 650.9

= +4.56 kHz
3600 x 0.22 QF kHz
2 792 QF
There are no USB/Mu1tisim Troubleshooting Problems in this chapter.
150
Chapter 18
Voltage Regulators
Section 18-1 Voltage Regulation
2
1. Percent line regulation = 100% = 00%
mV =0.0333%
6V
1 r 2 mV/8 V
2. Percent line regulation = $100% = $100% = 0.00417%/V
6
V
3. Percent load regulation = 100% 10 V — 9.90 V 100 o ' 1.01•

= a
9.90 V
4. From Problem 3, the percent load regulation is 1.01%. For a full load current of 250 mA, this
can be expressed as
1.01°
250 mA = 0.00404° o/mA
Section 18-2 Basic Series Regulators

5. See Figure 18-1.
Reference E or Sampling
voltage de to circuit
Figure 18-1
’2 33
2.4 V = 10.3 V
’
kCi
3 10 kfl
7. OU l+ 2 6 2.4 V = 8.51 V
T' ’
3
151
Chapter 18
8. For fi3 - 2.2 kf2:

5.6
$2.4 V = 8.5 V
7t3 kCi
2.2 k i l l
For 7t3' 4.7 kf2:
5.6
'OUT 1 2.4 V = 5.23 V
+
kf2
A3
The output voltage decreases4.7
by 3.27 V when $3 is changed from 2.2 kD to 4.7 kD.
9. OUT' l REF = 9.57 V

+
0.7 V
’4
= 2.8 f2
ZL'‘„) 250 mA
P—1 y) = (250 mA)22.8 ii = 0.175 W, Use a 0.25 W.
4
2.8
11. A4 = 1.4 D
— 2
Qmai) 0•7 V 0 7 V = soo a»t
'
A4 1.4
D
Section 18-3 Basic Shunt Regulators
12. Q conducts more when the load current increases, assuming that the output voltage
attempts to increase. When the output voltage tries to increase due to a change in load
current, the attempted increase is sensed by fi3 and 4 and a proportional voltage is applied to
the op- amp’s noninverting input. The resulting difference voltage increases the op-amp
output, driving Q more and thus increasing its collector current.
bVq,
lV
fi, 100 = 10 mA
f2
A
14. V — 1+ 10 kfl
5.1 V = 18.2 V
3 4 3.9kGj
V
18.2 V
L1' = 18.2 mA
oirr
L2'
18.2 V
fi Lz 1 •2 = 15.2 mA
L 15.2
kf2 mA — 18.2 mA = —3.0
' mA
s ¿' 3»0 mA
'
152
Chapter 18
= 250 mA
Pz — I R, — (250 mA)°100 CI =
6.25 W
Section 18-4 Basic Switching Regulators
’on
T
f = 0.01 s = 10 ms
100 Hz
OUT' 4 ms
4 12 V = 4.8 V
17.
o
/= 100 Hz, f,g= 6 ms
f 100 Hz
tp — T - tag — 10 ms — 6 ms = 4
ms 4 ms
duty cycle = 1T 10 - 0.4
percent duty cycle
ms = 0.4 x 100% = 40%
18. The diode Do becomes forward-biased when Q turns off.
19. The output voltage decreases.
Section 18-5 Integrated Circuit Voltage Regulators

20. (a) 7806: +6 V
(b) 7905.2: —5.2 V
(c) 7818: +18 V
(d) 7924: —24 V
21. OUT 2 '1 10 kf2

+
R,
REF + ’ A D J 2
1.0 1.25 V + (50 QA)(10 kf2)
'
— 13.7 V + 0.5 V = 14.3
V
153
Chapter 18
22. K ( = — 1 + PREF + AD
2(
1 J iq)
2( 'n) = 0 f2
r p( ;.) - —(i.25 V(1+ 0) + o) = —1.25 V
OUT(max) ' + REF + ADJ 2(mer)

= — 1.25 + (50 QA)(10
V'1 kf2)
- — (1.25 V(22.28) + 0.5 V)= —28.4 V
23. The regulator current equals the current through fi, +

V _ 14.3 V
= 1.3 mA
R, + fi 2 11 kf2
24. K = 18 V, K = 12 V
= 1.25
REG(max) = 2
V
mA, 1.25 V
-
625 D
A 12 V — 1.25 V = 10.8
2 mA
2' V
Neglecting
10.8 V
JADJ:2 mA= 5.4 kf2
For fi, use 620 Ci and use either 5600 II or a 10 kf) potentiometer for precise
fopr adjustment to 12 V.
Section 18-6 Applications o f I C Voltage Regulators

25• 0•7 V
text'(min)
ext ' 0.7 V _ 0.7 V = 2.8 f2
Z , 250
mA
26. K
= +12 V
1200 mA = 1.2 A
12 V
10
f2 max 1.2 A— 0.5 A =0.7 A
ext' Leit( IN )' 0.7 A(15 V — 12 V) = 0.7 A(3
ext' V) = 2.1 W
0.7 V
0.7 V
? e„ = 0.35 Ci
2A
See Figure 18-2.
Figure 18-2
154
Chapter 18
1.25 V
28. A = 500 mA= 2.5 f2
See Figure 18-
3.
29. A = 5008mAV
= 16 f2
See Figure 18-
4.
30. REF 1.25 V

The voltage divider must reduce the output voltage (12 V) down to the reference voltage
(1.25 V). See Figure 18-38 in the text.
R,
’OUT
_ ’RHF
1 1( R,(1 + Q F OUT
2' OUT) '
REF )
(’REF OUT) OUT
( )
REF
Let fi, = 10 kf2.
(1.25 V/12 V)
10 kI2(1— 1.25 V/12 V) - 86 kf2
155
Chapter 18

31. $2 leaky
33. Q2 collector-to-emitter open
34. fi, open
156
Results for System Applications
Results for
System Applications
Chapter 2
The Components
Transformer: 9 V tms
Diode: 1N5400, 1N4719, or MR500
Surge resistor: 1.0 Ci
Fuse: 250 mA slow-blow
Filter Capacitor 6800 QF
Troubleshooting
Board 1: Fuse is open
Board 2: Diode open
Board 3: Third diode
from top is open
Chapter 3
The Components
Regulator: 1N4733 5.1 V zener
Limiting resistor: 24 f2
Series resistors: 36 f2 for LED, 330 kCl for photodiode
Fuse: 250 mA slow-blow
Troubleshooting
Board 1: Photodiode defective
Board 2: Filter capacitor open
Board 3: Zener is open and not
regulating
Chapter 4
The Components
Bias resistors: 1/4 W
Q6 collector resistor: 1 W max (depends on load of time delay circuit)
Relay: 12 V, 55 CI, 0.15 A (relay A)
Diode: 1N4002
Troubleshooting
Board 1: CE junction of Q open
Board 2: CE junction of Q3 open
Board 3: 2 shorted
159
Chapter S
Analysis of the Temperature-to-Voltage Conversion Circuit
At r— 46°C: K = 4.78 V
At T — 50°C: K = 6.54 V
At T — 54°CI OU 7.06 V
The transistor isT'operating linearly.
The Power Supply Circuit

Resistors: R — 1.0 f2. = 6.8 Al, 3' 56 D
Zener diodes: 1N4739, 9.1 V; 1N4733, 5.1 V. The 9.1 V zener should have a heat sink if there is no
quaranteeed minimum load.
Troubleshooting
Board 1: Most likely a 9.1 V zener instead of a 5.1 V has been inserted.
Board 2: Thermistor open
Board 3: CE junction of transistor open
Chapter 6
Analysis of the Preamplifier Circuit
Input resistance: 17 £2
in(l)'
Input power: P - 362 yW
DC voltages:
B(1) = 19.3 V, Kp(J)' 1.23 V, +c(H' 9.29 V
B(2)' 1 . 8 8 V, E(2)' 1 . 1 8 V, C(2) 7.54 V
Total voltage gain: Max A — 733, Min A —
— 145
DC current: 2.68 mA
Resistor power ratings: All 1/8 W
Lowest frequency: 935 Hz

To adapt, change to a 12 V zener regulator such as a lN4742.
Troubleshooting
Board 1: $6 is open, causing 02 to saturate.
Board 2: Signal input, no signal output. No signal at collector of Q , but dc voltage appears ok.
Most likely fault is open C .
Board 3: Gain of stage 2 is approximately 4, which is much too low. C4 i s open.
160
Chapter 7
The schematic for the circuit board is as follows:
+l5 V
100 JiF
2N3797 2N3797 2N3797
Analysis of the pH Sensor Circuits

Input resistance: fi;.( .› 10 x 1012 Ci
Rheostat: 4 kf2 maximum, 2.76 kf2 typical, 1.33 kf) minimum
Output voltage range: 5.32 V to 8.52 V represent pH values from about 3.5 to about 9.5.
Troubleshooting
Board 1: Q is probably open although could be shorted.
Board 2: <O T for sensor 2 is too high. The rheostat is probably miscalibrated or Q is faulty.
Chapter 8
Basic MOSFET Amplifier Design
Drain-to-source voltage: ODS ' 3 V, DS(ma,) = 9 V
Voltage gain: Aq ) — 2.25,
( Aqp ) —
— 4.50
Variation in 2D from one FET to another will affect the Q-point of the circuit. Use of voltage- divider bias
rather than zero-bias will lessen the dependency of the O-point on 2DS
Since gp varies from one device to another, the voltage gain will also vary. To minimize the
influence of gp, a swamping source resistor with a value much greater than 1/gp can be used and the
drain resistor adjusted accordingly.
Amplifier Performance on the Test Bench

Measurement 1: Variation in 2D for Q (larger for set 2)
Measurement 2: Variation in 2Dfor Q (larger for set l)
Measurement 3: Variation in gp for Qi (larger for set 1)
Measurement
Set 1 Q : 2DS4: Variation
2.53 mA, in
gggp
—for I? (larger
2070 yS for set 2)
S'
Set 1 O : DSS 4.12 mA, gg — 2270 yS
'
Set 2 Ø{: DSS 4.87 mA, gg — 1700 yS
' maximum gp and typical JDSS. a FET amplifier with 118 stages is required to
Using FETs with
achieve the same3.95
Set 2 02: DSS mA, gpgain
maximum = 2780
of theySbipolar junction amplifier.
'
161
Recommendation
1. MOSFETs are not feasible replacements for the BJTs in this case.
2. Device variation in parameters make mass production impossible because circuit must be
“tweaked” to match the gains, unlike BJTs.
3. Retain the BJT because 118 FET stages are required to match the gain of the two-stage
BJT.
Chapter 9
Analysis of the Power Amplifier Circuit
Input resistance: in(min)'
Voltage gain: 1360 (preamp and power amp combined)
Transistor power ratings: Not sufficient without the heat sink.
Troubleshooting
Board 1: The signal appears at the bases but not at the output. One of the darlington transistors is
faulty.
Board 2: There is no signal at either base of the darlington transistors, but the dc voltages are ok,
indicating that the bias transistor junctions are not faulty. Since there is a signal through C„ there is
no obvious fault other than an ac short to ground at both bases, which in unlikely. So, the scope
measurements are faulty. Perhaps the probe is not making contact with test points 2 and 4 or
something has happened to the scope between step 4 and step 5.
Chapter 10
Analysis of the Amplifier Circuit
First stage: f (; )— 2.31 Hz,f,t(„,) — 1.37 Hz,f,/(§,p,„) —
— 12.7 Hz,f,¿(@@pq$J) is dominant.
First stage: fzf; —— 206 kHz, f„ („ — 13.7 Ivf'Hz, fan(in) is dominant.
Seco nd stage: fcl{in) — 1.37 Hz,/,t(„,) = 1.08 H /9 J ci(bypass) 17•9 M yd cl(bypa$z)si dominant.
Second stage: /„(i, = 450 kHz, fz( /yf— 12 MHz,/en(inj is dominant.
Overall lower critical frequency: 17.9 Hz
Overall upper critical frequency: 206 kHz
Overall bandwidth: approximately 206 kHz
Frequency Response on the Test

Bench
Lower critical frequency: Ca1culatedf„ =
17.9 Hz, T — — 55.9 ms;
55.9 ms/5.5 div = 10.2 ms/div. Closest
setting is 10 ms/div. The actual frequency
being measured is
f -- 1/(10 ms/div x 5.5 div) = 18.2 Hz
Upper critical frequency: Calculated/p =
206 kHz, T — — 4.85 ps;
4.85 ps/5 div = 0.97 ps/div. Closest setting is 1 ps/div. The actual frequency being measured isf cu'
1/(lps/div x 5 div) = 200 kHz
162
Chapter 11
Analysis of the Motor Speed-Control Circuit
PUT gate voltage of 0 V, assuming forward voltage of 0 V, and the potentiometer set at 25 kD:
For the potentiometer set to 25 kf2, Pq of the PUT is the same. With Kp = 0 V, 2 V, 4 V, 6 V, 8
V, and 10 V, the PUT conducts with Vz — 0.7 V, 2.7 V, 4.7 V, 6.7 V, 8.7 V, and 10.7 V
respectively. Since <A— 7.13 V maximum for Vz — 8 V and 10 V, the PUT never conducts and the
SCR never fires and the load voltage is zero. The voltages across the load resistor are as follows:
PUT gate = 0 V Vp
163
Troubleshooting
Board 1: The 50 kf) resistor is open or the 1.2 k£) resistor is shorted.
Board 2: The SCR is open.
Board 3: The SCR is shorted.
Board 4: The PUT is shorted.
Chapter 12
Analysis of the Audio Amplifier Circuit
Midrange voltage gain: Aqgp — 46.8
Lower critical frequency: f — I 5.4 Hz
Bandwidth: BW — 15 kHz
Maximum inpu!: in(max) = 470
mV peak-to-peak
Speaker power: Pp — 3.78 W
Troubleshooting
Board 1: The op-amp is faulty, improper connection at pins 3 or 6, or supply not on.
Board 2: $5 is open or BE junction of Q is open.
Board 3: fi, is open.
Chapter 13
Analysis of the ADC Circuit
Summing amplifier gain: A - —1
Slope of integrator ramp +2 V input: b V„/lst - 2 V/ps
Slope of integrator ramp —8 V input: b V„1lst - —8 V/ps
Dual-slope output: Positive ramp from 0 V to +3 V in 1 ps followed by negative ramp back to
0 V in 0.375 .
Sampling rate: 571 kHz
Troubleshooting
Board 1: IC3 output stuck high.
Board 2: fi, or p ›s open.
Board 3: Co is shorted making IC2 a
voltage follower.
Chapter 14 120 kO
3 + l - 330 kfl = 3.8; Av2' @
The Circuits
Isolation amplifier gain: A — = 1.2; Aq„,) = 4.6
fi, 86 kf2 + 100 kD
Filter bandwidth: <l06 Hz
4
Filter gain: A — 1.59
1009 A fi y) — —150
Post amplifier gain: Admin)'
Amplifier gain: Aq ) — —1750, Aqq„) = —2620
Voltage range at position pot wiper: min' 59•7 mV Vpyyy — +59.7 mV
164
Troubleshooting
Board 1: Several faults can product no output including $› open or IC3 output faulty or open.
Board 2: R6 or 7ti open.
Board 3: fi, open.
Board 4:p 5or 7t 6 open.
Chapter 15
The Filter Circuit
Sallen-Key critical frequencies: ICI filter, 15.9 kHz; IC2 filter, 53 kHz; IC4 filter, 18.9 kHz; IC5
filter, 15.9 kHz
Multiple FB center frequency: 19 kHz
Bandwidths: Approximately the same as the critical frequency for each filter.
Sallen-Key voltage gains: ICl filter, 1.59; IC2 filter, 1.59; IC3 filter, 0.915; IC4 filter, 1.59;
IC5 filter 1.59
Sallen-key response: R›t = 0.589 (approximately Butterworth)
Chapter 16
The Function Generator Circuit
Oscillator frequencies:
x1,: minimum/= 0.73 Hz, Maximum/= 8.84 Hz
x10,: minimumf= 7.3 Hz, Maximumf— 88.4 Hz
x100,: minimum/= 73 Hz, Maximumf— 884 Hz
xlk,: minimumf= 730 Hz, Maximumf= 8.84 Hz
x l0k,: minimumf— 7.3 kHz, Maximum/= 88.4
kHz
Output voltages:
Sine wave: 25.4 V pp
Square wave: 30 V pp
Triangular wave: 12.6 V pp
r‹oubleshooting
Unit l. Fault is in the ICI Wien-bridge oscillator block. ICI output could be open or lead-lag
feedback loop open.
Unit 2: Output of IC2 is open.
Unit 3: Output of IC3 open or fi, or fi› open.
Unit 4: Negative feedback path of IC3 is open causing it to saturate.
Chapter 17
The PC Board
During board assembly, a “stuffing error” has resulted in a resistor where diode D should be.
The Circuitsmode: foriyfPLL)

• Originate 1.2 _ 1.2 = 1.07 kHz
4R,C, 4(5.6 kF2)(0.05
QF)
Answer mode: fi, = fi3 J fi4 = 6.2 kfl J 5.6 kf2 = 2.94 kD (Neglecting Qz sat fi)
1.2 _ 1.2 = 2.04 kHz

4fi,C,
4(2.94 kf2)(0.05 QF)
165
Results for System
Applications
• Same calculations as above: forfV
i CO)— 1.07 kHZ, g»( rcO1 p
— 2.04 kHZ
• Max and min voltages are nearly equal to the supply voltage +6 V and —6 V.
• When Q4 is off and fi„ = 0 ii and kg set for maximum voltage: Kg= +6 V
• T — = 3.33 ms, T = 1.67 ms 300 Hz

FSK 2data: 1090 Hz tone for 1.67 ms when pin 9 is low and 1270 Hz tone for 1.67 ms when pin 9
is high.
• of— 1270 Hz — 1070 Hz = 2225 Hz — 2025 Hz = 200 Hz
p 200 Hz
+4 V
50
Hz/V
Troubleshooting
• No circuit power, frequency components out of tolerance preventing lock, faulty PLL or op-amp.
• Q por $3 open, Q shorted, faulty PLL.
• VCO faulty, 3 open.
• 03 or $6 open, pin 9 or VCO shorted to ground, Of shorted.
Chapter 18
Bridge voltages at peak of input: Top corner: -17 V peak, bottom corner: =—17 V peak,
left corner: —16.3 V peak , right comer +16.3 peak.
PIV: 33.2 V
Regulator input voltages: 7812: +16.3 V; 7912: —16.3 V
Regulator current: 250 mA from each regulator. Heat sinks are not necessary.
Troubleshooting
Board 1: Fuse may be blown. Transformer may have an open primary of secondary winding or a
shorted primary winding.
Board 2: Input or output of ICI may be open. Pin 2 of ICI may be open. Cl or C3 may be shorted.
Board 3: Input or output or pin 2 of IC2 may be open. C or C4 may be shorted.
Board 4: ICl and IC2 may be swapped.
166
Summary of EWB/Multisim
Circuit Files
Password for Solution Files: EDSFLOYD
Password for Fault Circuits: book
Prepared by Gary Snyder
167
EWB5 folder
Multisim 6 folder
Chapter 18
folder
EXAMPLES EXAMPLES
Folder Folder
E0l-yy El8-yy
TROUBLESHOOTING TROIJBLESHOOTING
EXERCISES EXERCISES
Folder Folder EXAN4 i*l-E*S EX AM P LES
TSEOl-yy TSE18-yy Folder Folder
E0l-yy El8-yy
PROBLEMS PROBLEMS rnot rx
Folder Folder
F0l-w si
F18-yy Folder
TROtIBLESHOOTIN TROUBLESHOOTINü Folder TSEl8-yy
PROBLEMS PROBLEMS TSE0l-yy
Folder Folder
TSP01-yy TSP18-yy Folder Folder
F0l-yy F18-yy
i'itfiiii l ›i PItOßI.I!\'Il. '

Folder Folder
Student Files TSP0l-yy TSPl8-yy
Instructor Files
CD-ROM Organization Diagram
168
Summary of Circuit Files
Chapter 1:
Circuit EWB MultiSim

E0l-01 VR(1) = 9.287 V VR( ) =9.287 V
VD( ) = 712.8 mV VD( ) = 0.713 V
VR(2) = 9.98 mV
Vg(2) = 9.980 mV
Vp(2) = 9.99 V
VD(2) = 9.99 V
F0l-41a OR' 0.000jiV VR — 0.020 nV
F0l-4 lb VR 99.15 V OR 99.151 V
F0l-41c VR 23.68 V OR ' 23.681 V
F01-41d VD 651.5 mV Vp = 0.651 V
F0l-42a VD 25.00 V VD 25.000 V
F01-42b VD 15.00 V Ve — 15.000 V
F0l-42c VD 2.500 V VD 2.500 V
F01-42d VR 0.0113 pV VR l 1.285 nV
F0l-43 VA 25.00 V VA 25.00 V
VB 24.25 V GB' 24.255 V
Vc 8.746 V Vp = 8.746 V
VD 8.000 V VD 8.000 V
TSP01-20 VR 3.000 V VR 3.000 V
TSPOI-21 VD 100.0 V VD = 99.994 V
TSP0l-22 VD 32.43 V V D 32.434 V
TSPOI-23 VD -0.001 pV VD ”1.000 pV
TSP0l-24 VD 667.6 mV VD = 0.668 V
TSPOI-25 Ve 0.192 nV
TSP0l-26 VD 2.577 V V D' 2.577 V
TSP01-27 VD l 1.99 V VD 11.994 V
TSP01-28 Vg = 25.00 V V A' 25.00 V
VB 24.25 V VB 24.253 V
Vc' 8.000 V Vc 8.000 V
I D 8.000 V VD' 8.000 V
Chapter 2:
Circuit EWB MultiSim

E02-02a Half-wave Vp 4.2115 V Half-wave V = 4.3 V
E02-02b Half-wave Vp 98.0893 V Half-wave V = 99.2 V
E02-03 Half-wave Vp 76.9264 V Half-wave Vp 77.0 V
E02-05a Full-wave Vp 24.2233 V Full-wave V = 24.3 V
E02-05b Full-wave Vp 24.2233 V Full-wave V = 24.3 V
E02-06 Full-wave Vp 41.2853 V Full-wave Vp 41.0 V
E02-07 Vb(max) = 14.6294 V Vb(max) — 14.7 V
VL( ) = 13.8651 VL( ) = 13.8 V
V
E02-09 Half-wave Half-wave
Vp(max) = 8.9581 V Vp(1TlaX) 9. 1 V
Vp(lRll1)' 8.9581 V Vt(min) = 779. l mV
E02-10 Clipped Clipped
Vp(max) = 5.7492 V Up(max) = 5.7 V
Vp(min) = -5.7469 Up(lT1in) = -5.7 V
V
E02-l l Clipped Clipped
Vp(max) = 8.9729 V Vp(max) = 9.0 V
Vp(min) = -17.8942 Vp(min) = -18.0 V
V
E02-12 Negative Clamp Negative Clamp
Vp(IilaX)' 609.2934 mV Vp(IT1aX) 729 IRV
Vp(lT1)l1)' -46.7967 V Vt(min) = -45.5 V
F02-71a Half-wave Vp 4.1826 V Half-wave Vt = 4.2 V
169

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Instructor’s Resource Manual to accompany

ELECTRONIC DEVICES, Sixth Edition

Upper Saddle River, New Jersey

Results for System Applications 157

Summary of EWB/Multisim Circuit Files 167

Test Item File 185

2. The third shell of an atom can have 2n2 = 2(3) 2 = 18 electrons

Section 1-2 Semiconductors, Conductors, and insulators

4. An atom with four valence electrons is a semiconductor.

Section 1-3 Covalent Bonds

Section 1-4 Conduction in Semiconductors

Section 1-5 N-Type and P-Type Semiconductors

Section 1-6 The Diode

Section 1-7 Biasing the Diode

Section 1-8 Voltage-Current Characteristic ofa Diode

Section 1-9 Diode Models

Section 1-10 Testing a Diode

20. Diode shorted

21. Diode open

22. Diode open

23. Diode shooted

25. Diode shooted

26. Diode leaky

27. Diode open

28. Diode shooted

) Center-tapped full-wave rectifier

IV ' p(gp() 1.414(20 V) = 28.3 V

Section 2-3 Power Supply Filters and Regulators

<Dc 1— ' I- 30 V = 25.8 V

14. %r r(pp) 100 - 8.33 V

17. Vp( e — (1.414)(36 V) = 50.9

19. Load regulation US.5 V —14.9 V

20. FL' — (0.005) = 12 V — (0.005)12 V = 11.94 V

Section 2-4 Diode Limiting and Clamping Circuits

23. See Figure 2-8.

24. See Figure 2-9.

25. See Figure 2-10.

26. See Figure 2-11.

Section 2-5 Voltage Multipliers

30+ TOUT(rip) 3 p(in 3(1 •4l4)(20 V) = 84.8 V

Section 2-6 The Diode Data Sheet

33. Use the specified s = 800 A.

Section 2-7 Troubleshooting

2Kp 2(115 V)(1.414) _

p(sec) 1•414(23 V) = 32.5 V

System Application Problems

(e) Full-wave voltage with peak of 50 V from TP7 to ground:

43. The capacitor input voltage is

44. See Figure 2-14.

45. See Figure 2-15.

47. Upt = (1.414)(110 V) — 0.7 V = 155 V

EWB/Multisim Troubleshooting Problems

48. Diode shorted

49. Diode leaky

50. Diode open

51. Bottom diode open

52. Reduced transformer turns ratio

53. Open filter capacitor

54. Diode leaky

56. Load resistor open

10. ztmin)' z z z' 5.1 V — (49 mA — 1 mA)(7

Section 3-3 Varactor Diodes

17. From the graph, <R - 3 V @ 25 pF

Section 3-4 Optical Diodes