Common Source Multistage Amplifier Using

CNTFET
Mr. Sourish Sahu 18MVD0067
Mr. Akshay Pathrakar 18MVD0071
M.Tech- VLSI
School of Electronics Engineering
VIT, Vellore.
Under the guidance of
Dr. V. N. Ramakrishnan
Associate Professor
Dept. of Micro & Nano-electronics,
School of Electronics Engineering,
VIT, Vellore
 Contents
 Motivation

 Carbon Nanotube (CNT)

 Introduction of CNTFETs

 Why CNTFETs

 Working Principle

Basic circuits using CNTFET

Future work
 Motivation
 Scaling of CNTFETs are possible below 10 nm
and do not suffer from SCE and DIBL.

 More reliable under high temperature gradient and

electric field.

 Higher Transconductance results greater gain or

amplification.

 Switch reliably using much less power.

 Carbon Nanotube (CNT)
 In 1991, S.Ijima discovered CNT at NEC Fundamental
Laboratory in Tsukuba, Japan [1].
 A cylindrical structure of graphene having Sp2 bond
which is stronger than Sp3 bond.

• Structure of (a) Graphene (b) SWNTs (c) MWNTs

CNT diameter directly depends on Chiral Vector (n,m) and
inversely dependent on bandgap (SWCNT varies from 0 to
2 eV).

Electrical property of CNT can be either metallic or

Semiconducting behaviour.

 Length to diameter ratio of up to 1,32,000,000:1 which is

larger than any other material.

 It can carry current density of the order of 10µA/nm2.

 Techniques have been developed to produce Nanotube in

sizable quantities some of them are:
 Arc Discharge,
 LASER ablation and Chemical Vapour deposition (CVD).
 Electronic Property of CNT depends on Chiral vector as
shown in table:
No. Type of CNT Value of n and m Properties

1 Armchair n=m Metallic

2 Zigzag m=0 Semiconducting

3 Chiral n-m≠3×integer Large Band gap

4 Quasi Semiconducting n-m=3×integer Small Band gap

 Chiral vector of CNT is very important parameter for

selecting it as a Channel Material.
 (a) (b)

• Sub-band Structure of CNT with Chiral Vector (10,10)

and (10,0)
 Introduction of CNTFETs
 CNTFETs uses CNT as a channel material in place of
traditional Si.

 First CNTFETs were demonstrated in the year 1998

[2-3].

 CNTFETs are lead by IBM.

 CNTFETs is one of the promising device of the Next

Generation Integrated Circuit.

 It delivers three to four times higher drive current than

Si MOSFET.
• Structure of CNTFET
 Why CNTFETs:-
It provides:-
 Superior threshold Voltage
 High Transconductance
 Superior Subthreshold Slope
 High Current density
 High Mobility
 Ballistic transport
 Strong covalent bond
 High Ion/Ioff ratio
 Switching reliability
 High temperature resilience
 Working Principle

 Same as MOSFET.

 Electrons are supplied by source terminal and drain will

collect these electrons.

 Current is actually flowing from drain to source

terminal.

 Control current by Gate terminal.

 Transistor is off if no gate voltage is applied.

Single Stage CS Amplifier Circuit:
 Two Stage CS Amplifier Circuit:
 Three Stage CS Amplifier Circuit:
 Reference: